外延铁电薄膜相变温度的尺寸效应

考虑外延钙钛矿型铁电薄膜内的等效应力、表面晶格变化和表面电荷引起的退极化效应等机电耦合边界条件,利用铁电薄膜系统的动态金茨堡-朗道方程(DGL),系统分析和讨论了外延铁电薄膜相变温度与临界相变厚度的尺寸效应.结果表明,铁电薄膜相变温度与临界相变厚度完全依赖于各种与薄膜厚度相关的力电耦合边界条件.也给出了BaTiO₃外延铁电薄膜相变温度在各种边界条件下随厚度的变化,从结果看出,本文的分析与结论更符合实验数据. 关键词： 尺寸效应 外延铁电薄膜 相变温度 力电耦合边界     

Changes of thermo-morphologic and thermotropic properties of liquid crystals at direct and reverse nematic mesophase ↔ isotropic liquid phase transitions: surface-induced effect

In this work, the effect of thin films on the thermo-morphologic and thermotropic properties of the phase transitions between the nematic mesophase and isotropic liquid has been investigated. Investigations have been carried out for both the heating and cooling processes. The temperature and linear widths of the biphasic regions of the direct and reverse phase transitions in nematic liquid crystals versus thickness of the thin films have been calculated with a high accuracy. The shift of the nematic mesophase–isotropic liquid and the isotropic liquid–nematic mesophase phase transition temperatures to higher temperatures and the enlargement of the temperature and linear widths of the biphasic regions as the effect of surfaces have been found.     

Pressure, temperature, and thickness dependence of CO2-induced devitrification of polymer films

The glass transition temperature is known to increase with decreasing film thickness h for sufficiently thin poly(methyl methacrylate) films supported by silicon oxide substrates. We show that this system undergoes a CO2 pressure-induced devitrification transition, P(g), which is film thickness dependent, P(g)(h)=DeltaP(g)+P(bulk)(g). P(bulk)(g) is the bulk glass transition and DeltaP(g) can be positive or negative depending on T and P. The phenomenon of retrograde vitrification, wherein the polymer exhibits a rubbery-to-glassy-to-rubbery transition upon changing temperature isobarically, is also shown to occur in this system and it is film thickness dependent.     

Phase transition in thin epitaxial ferroelectric films as derived from thermal measurements

The temperature dependence of the heat capacity of thin epitaxial films BaTiO₃/MgO is studied by the dynamic 3ω method in the thickness range 50–500 nm. It is revealed that the heat capacity exhibits diffuse anomalies due to phase transitions. The temperature of the ferroelectric phase transition T _C increases with decreasing film thickness. The reasons for the strong diffuseness of the transition and the nonlinear dependence of the transition temperature on the film thickness are discussed.     

Ion crater healing and variable temperature ellipsometry as complementary probes for the glass transition in thin polymer films

Poly(methyl methacrylate) (PMMA) thin films of various tacticity and thickness were bombarded at grazing angles by 20 MeV Au ions at different temperatures. The shape of the tracks was investigated by scanning force microscopy (SFM) after annealing for various time at different temperatures and constant quenching rate. The thickness dependent glass transition temperature, T(g)(h), was estimated from the temperature of relaxation of ion-caused nanodeformations in the films. T(g)(h) obtained from the thermal healing of the holes and hillocks is found in good agreement with the one determined by variable temperature ellipsometry for PMMA film thickness of 80 nm and corresponds to the T(g) of each bulk PMMA stereoisomer. Below this thickness, some significant divergences are observed between the T(g) measured by the two techniques. We propose that the healing of ion crater hillock and the kink in the thermal expansion arise from the different nature of chains motions which are perturbed to different extents according to the main polymer chain preferential orientation in the thin film. This can be tentatively interpreted by a so-called "anisotropic" character of the glass transition.     

Phase transitions in uniaxial ferromagnetic film covered by superconducting layers

The phase diagram and the single-domain uniform state for a uniaxial ferromagnetic film with the superconducting layers covering one or both sides of a ferromagnet are investigated. The superconductor is supposed to be a second-order one and the interaction between the magnetic sub-system and with the conductivity electrons in a superconductor is purely electromagnetic and the vortices in a superconductor are pinned. The critical thickness of the magnetic film for which the uniform state becomes absolutely stable is calculated when the external magnetic field is supposed to be in-plane of the film. It is shown that the critical thickness of the film from the magnetic material with the quality factor Q>1 monotonically decreases as the magnetic field increases in the range from zero value to the value of the transition field where the collinear phase transforms into the angular (canted) phase. Further the critical thickness increases with the increase of the field. The quasi-single-domain magnetic film states were considered when the film thickness was close to the critical one. It is shown that for a thin isolated magnetic film the domain period exponentially increases with the decrease of the film thickness. Such dependence, however for the film with double-side superconducting cover and close to the transition into the single domain state becomes logarithmic and for the film covered by superconductor only on the one side varies as the power series. The single-domain state existence and the asymptotic behaviour of the domain structure is explained by the features of the asymptotic behaviour of the domain walls within the system. As for isolated magnetic film and for a film with the superconductor cover layers the transition from the collinear phase to the inhomogeneous state is the second-order phase transition and the transition from the uniform angular phase to the inhomogeneous phase is the first-order transition.     

Phase transitions in hybrid SFS structures with thin superconducting layers

Features of a phase transition between 0 and π states in superconductor/ferromagnet/superconductor (SFS) Josephson structures with thin superconducting layers and a ferromagnetic barrier are studied experimentally and theoretically. The dependence of the critical temperature T_c of a transition of the hybrid structure to a superconducting state on the thickness of superconducting layers d_s is analyzed by a local method involving measurements of the nonlinear microwave response of the system by a near-field probe. An anomalous increase in the measured temperature T_c at the reduction of the thickness d_s is detected and is attributed to the 0-π transition.     

Modulation of the electronic states of perovskite SrCrO3 thin films through protonation via low-energy hydrogen plasma implantation approaches

Hydrogenation of transition metal oxides offers a powerful platform to tailor physical functionalities as well as for potential applications in modern electronic technologies.An ideal nondestructive and efficient hydrogen incorporation approach is important for the realistic technological applications.We demonstrate the proton injection on SrCro3 thin films via an efficient low-energy hydrogen plasma implantation experiments,without destroying the original lattice framework.Hydrogen ions accumu-late largely at the interfacial regions with amorphous character which extend about one-third of the total thickness.The Hx.SrCro3(HSCO)thin films appear like exfoliated layers which however retain the fully strained state with distorted perovskite structure.Proton doping induces the change of Cr oxidation state from Cr^4+to Cr^3+in HSCO thin films and a transition from metallic to insulat-ing phase.Our investigations suggest an attractive platform in manipulating the electronic phases in proton-based approaches and may offer a potential peeling off strategy for nanoscale devices through low-energy hydrogen plasma implantation approaches.     

Influence of Surface Transition Layers on Phase Transformation and Pyroelectric Properties of Ferroelectric Thin Film

Taking into account surface transition layers （STLs）, we study the phase transformation and pyroelectric properties of ferroelectric thin films by employing the transverse Ising model （TIM） in the framework of the mean field approximation. The distribution functions representing the intra-layer and inter-layer couplings between the two nearest neighbour pseudo-spins are introduced to characterize STLs. Compared with the results obtained by the traditional treatments for the thin films using only the single surface transition layer （SSL）, it is shown that the STL model reflects a more realistic and comprehensive situation of films. The effects of various parameters on the phase transformation properties have shown that STL can make the Curie temperature of the film higher or lower than that of the corresponding Sulk material, and the thickness of STL is a key factor influencing the film properties. For a film with definite thickness, there exists a critical STL thickness at which ferroelectricity will disappear when the intra-layer and inter-layer interactions are weak.     

Phase-transition phenomena of 0.8 microm superfluid 3He slab

We have investigated the transition phenomena of superfluid 3He in thin 0.8 microm slabs with a cw-NMR method. We found that, just below the phase-transition temperature, only the A phase appeared at any pressure. At lower temperatures, the phase transition to the B phase occurred between 0.3 and 2.74 MPa. We obtained a universal critical thickness delta as a function of pressure. When the reduced slab thickness, d/xi(T), is smaller than delta, only the A phase becomes stable.     

Temperature driven reversible breakdown of pseudomorphism in ultrathin Fe/Cu3Au films

We observe that ultrathin Fe/Cu(3)Au(001) films in the 6-13 A thickness range, beyond the thickness of pseudomorphism breakdown at room temperature, exhibit a temperature dependent structural phase transition in the range T(c) approximately 345-380 K. In the high temperature state the Fe film becomes pseudomorphic, while breakdown of pseudomorphism reversibly occurs as the system is cooled below the transition temperature. The difference between substrate and overlayer thermal expansion coefficient is highlighted as the driving force for the observed transition.     

A model of the size effect in a ferroelectric thin film under conditions of the phase transition

The size effects observed in thin films of displacive ferroelectrics are considered. A model of the dependence of the spontaneous polarization and phase transition temperature on the film thickness is proposed.     

纳米二氧化钒薄膜的电学与光学相变特性

采用双离子束溅射氧化钒薄膜附加热处理的方式制备了纳米二氧化钒薄膜。在热驱动方式下,分别利用四探针测试技术和傅里叶变换红外光谱技术对纳米二氧化钒薄膜的电学与光学半导体-金属相变特性进行了测试与分析。实验结果表明,电学相变特性与光学相变特性之间存在明显的偏差,电学相变温度为63 ℃,高于光学相变温度,60 ℃;电学相变持续的温度宽度较光学相变持续温度宽度宽;在红外光波段,随着波长的增加,纳米二氧化钒薄膜的光学相变温度逐渐增大,由半导体相向金属相转变的初始温度逐渐升高,相变持续的温度宽度变窄。在红外光波段,纳米二氧化钒薄膜的光学相变特性可以通过光波波长进行调控,电学相变特性更适合表征纳米VO₂薄膜的半导体-金属相变特性。     

Size-induced appearance of ferroelectricity in thin antiferroelectric films

In the paper we consider size effects on phase transitions and polar properties of thin antiferroelectric films. We extend the phenomenological approach proposed by Kittel for thin films allowing for gradient (correlation) energy and depolarization field energy. Surface piezoelectric effect as well as misfit strain appear due to lattice constants mismatch between the film and its substrate. Direct variational method is used to derive the free energy with renormalized coefficients depending on the film thickness. Obtained free energy expression allows the calculation of phase diagrams and all electro-physical properties by a conventional minimization procedure. Approximate analytical expressions for the paraelectric–antiferroelectric–ferroelectric transition temperature dependences on film thickness, polarization gradient coefficient, and extrapolation lengths were obtained. The thickness dependence of the electric field critical value that causes antiferroelectric–ferroelectric phase transition was calculated. Under favorable conditions the antiferroelectric phase at first transforms into ferroelectric one and then into paraelectric phase with the decrease of the film thickness. Proposed theoretical consideration explains the experimental results obtained in antiferroelectric PbZrO₃ thin films.     

参数修改对铁电薄膜相变性质的影响

在关联有效场理论的框架内, 利用微分算子技术, 详细地计算了基于横场伊辛模型描述的对称铁电薄膜系统的相变性质. 根据薄膜各层自旋平均值构成的一系列耦合方程, 推导出可以用来计算任意层的具有不同表面层的薄膜相图的解析通式方程, 讨论了参数修改对薄膜相互作用参数从FPD (铁电相占主导地位的相图)到PPD (顺电相占主导地位的相图)过渡值和参数空间中各相变区域的影响. 在与平均场近似进行比较的结果显示, 关联有效场理论所得到的铁电薄膜的铁电性在某种程度上比平均场近似下的结果减弱. 关键词： 铁电薄膜 横场伊辛模型 相图 居里温度     

Fluctuation conductivity of thin films and nanowires near a parallel-field-tuned superconducting quantum phase transition

We calculate the fluctuation correction to the normal state conductivity in the vicinity of a quantum phase transition from a superconducting to a normal state, induced by applying a magnetic field parallel to a dirty thin film or a nanowire with thickness smaller than the superconducting coherence length. We find that at zero temperature, where the correction comes purely from quantum fluctuations, the positive "Aslamazov-Larkin" contribution, the negative "density of states" contribution, and the "Maki-Thompson" interference contribution are all of the same order and the total correction is negative. Further, we show that, based on how the quantum critical point is approached, there are three regimes that show different temperature and field dependencies which should be experimentally accessible.     

对硅片上自组装生长的Pentacene薄膜生长机制及其结晶相态的研究

采用热蒸发的方法在硅片衬底上自组装生长的Pentacene薄膜,薄膜在80℃温度下经2 h恒温真空热处理,通过原子力显微镜(AFM)对Pentacene薄膜表面形貌及其生长机制进行研究.结果得到,在硅片上生长的Pentacene薄膜足以台阶岛状结构生长,其岛状直径约为100 nm.且Pentacene分子以垂直于衬底的方向生长,台阶岛状结构中每个台阶的平均高度约为1.54 nnl·s-1,与Pentacene分子的沿长轴方向的长度相近.从Pentacene薄膜的XRD图谱中可以看出,薄膜在形成的过程中会因条件的不同而形成不同的结晶相,分别为薄膜相和三斜体相,且薄膜的结晶相将随着薄膜厚度的增加向三斜体相转变,其临界厚度为80和150 nm,当薄膜大于150 nm时,薄膜的三斜体相占主导地位,而当Pentacene薄膜的厚度小于80 nm时,Pentacene薄膜呈薄膜相存在.     

Thermodynamically stable states in eutectic systems

It is shown that in a binary system in which the liquid-solid phase transition is described by a eutectic phase diagram, there are temperature and concentration regions in the liquid state with different thermodynamic stability. These regions are separated by bell-shaped decay and spinodal curves. Zh. Tekh. Fiz. 67, 7–12 (April 1997)     

Some relevant parameters affecting the glass transition of supported ultra-thin polymer films

We have measured, the thickness dependence of the glass transition temperature T(g)( h), using ellipsometry at variable temperature, for poly(methyl-methacrylate) (PMMA) of various tacticity in confined geometry. We report that several factors significantly affect T(g)( h): i) polymer microstructure (stereoregularity of PMMA) related to local dynamics; ii) interfacial interactions; iii) conformation of the polymer chains. These results raise many fundamental questions on the origin of the thickness-dependent glass transition. Why and how do the interactions with the substrate significantly affect T(g)( h)? Does T(g)( h) depend on the modifications of conformational parameters of the chains (their entropy)? What is the correlation between local dynamics and T(g)( h) in thin films? The aim of this paper is to summarise these open questions, which should stimulate further investigations in the thin polymer film scientific community.     

Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films

In the present paper, we investigate the effect of thermal annealing on optical and microstructural properties of HfO₂ thin films (from 20 to 190 nm) obtained by plasma ion assisted deposition (PIAD). After deposition, the HfO₂ films were annealed in N₂ ambient for 3 h at 300, 350, 450, 500 and 750 °C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), UV Raman and FTIR were used for the physical characterisation of the as-deposited and annealed HfO₂ thin films. The results indicate that as-deposited PIAD HfO₂ films are mainly amorphous and a transition to a crystalline phase occurs at a temperature higher than 450 °C depending on the layer thickness. The crystalline grains consist of cubic and monoclinic phases already classified in literature but this work provides the first evidence of amorphous-cubic phase transition at a temperature as low as 500 °C. According to SE, XRR and FTIR results, an increase in the interfacial layer thickness can be observed only for high temperature annealing. The SE results show that the amorphous phase of HfO₂ (in 20 nm thick samples) has an optical bandgap of 5.51 eV. Following its transition to a crystalline phase upon annealing at 750 °C, the optical bandgap increases to 5.85 eV.