外加电场作用下碳纳米管结构稳定性及结构修饰研究

利用外加电场的方法，对多壁碳纳米管的结构稳定性进行了研究.结果表明当场强达到30 V/nm时，碳纳米管端部的结构失稳，端部碳原子间的π键被打开，外部原子开始进入到碳纳米管的结构中.利用电子显微镜作为纳米加工仪器，通过外加电场的方法在多壁碳纳米管的端部制备了非晶态碳纳米线，形成碳纳米管-纳米线复合结构.碳纳米管和纳米线结合处的σ键作为绝缘界面，形成了电子输运的势垒.     

碳纳米管场致发射中的空间电荷效应

采用微波等离子体化学气相沉积(MWPCVD)方法成功制备以碳纳米管束为单元的场致发射阵列,获得很好的场致发射电流发射特性,在电流密度较大时,发现I-V特性偏离由Fowler-Nordheim公式计算出的结果。采用Electron Beam Simulation(EBS)软件进行模拟分析发现:在电流密度较低时,I-V特性能很好与F-N公式吻合。但碳纳米管尖端电流密度大于106A/cm2时,碳纳米管尖端处的有效电场强度受空间电荷的影响比较明显,进而对碳纳米管的场致发射特性显现出不可忽略的影响,此时碳纳米管的发射电流密度开始受到空间电荷的限制。     

Effect of interaction between AC electric field and phonon oscillation of metal cluster on tip-growth of carbon nanotube

The paper reports effect of interaction between AC electric field and metal cluster sitting at tip end of the carbon nanotube (CNT) on CNT tip-growth in CVD theoretically. For this purpose, a theoretical model based on phonon oscillations of the metal catalyst and influence of AC electric field on these oscillations is presented. Results show that there is an optimum AC electric field which optimizes growth of ultra-long CNTs. Then it is demonstrated that, in comparison with CNTs in the absence of field, CNTs under optimum electric field grow more. In addition, relation between optimum temperature and amplitude of AC electric field is investigated and it is shown that increasing electric field leads to higher optimum temperature. Finally, Investigation of effect of catalyst type on optimum electric field demonstrates the optimum field for various catalysts is different due to their different characteristics including van der Waals interaction with carbon, atomic mass and number of free charge carriers per each atom. All results are discussed and interpreted.     

Quantum-mechanical investigation of field-emission mechanism of a micrometer-long single-walled carbon nanotube

A quantum-mechanical simulation is carried out to investigate the charge distribution and electrostatic potential along a 1 microm long (5,5) single-walled carbon nanotube under realistic field-emission experimental conditions. A single layer of carbon atoms is found sufficient to shield most of the electric field except at the tip where strong field penetration occurs. The penetration leads to a nonlinear decrease of potential barrier for emission, which is equally responsible for the low threshold voltage besides the well-known geometrical field enhancement factor.     

第一性原理研究电场对BN纳米管电子结构的影响

采用基于密度泛函理论的第一性原理计算研究了电场对BN纳米管的电子结构的影响.首先对在不同电场强度下的纳米管几何结构进行了优化,可以看出纳米管沿轴方向层间距出现了不规则的变化.电子能带结构显示,在电场作用下,zigzag型和armchair型两种结构纳米管的能带向低能方向移动,并且导致纳米管的带隙有显著的减小.电场使得armchair型纳米管的带隙发生了从间接带隙向直接带隙的转变.在电场作用下,纳米管的两端态密度呈现出明显的差异,正负电荷沿轴向出现了沿轴向的空间分离,Mulliken电荷分布图揭示出最高占据轨道和最低未占据轨道分居在纳米管的两端.     

Optimization of the parameters of a carbon nanotube-based field-emission cathode

A procedure for optimizing a field-emission cathode based on carbon nanotubes (CNTs) is developed. An array of identical equidistant vertical CNTs is considered. The optimization procedure takes into account the effect of screening of an electric field by neighboring nanotubes by solving a Laplace equation and the thermal instability of nanotubes, which limits the emission current density of a nanotube, by solving a heat conduction equation. The relation between the emission current and the applied voltage is described by the Fowler-Nordheim relationship containing the CNT tip temperature as a parameter. Upon optimization, the optimum distance between CNTs that ensures the maximum emission current density is calculated. The calculation results demonstrate that this parameter depends substantially on both the applied voltage and the nanotube geometry. These dependences are weakly sensitive to the choice of the transport coefficients (thermal conductivity, electrical conductivity) of nanotubes.     

Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

Ab initio calculations demonstrated that the energy gap modulation of a chiral carbon nanotube with mono-vacancy defect can be achieved by applying a transverse electric field. The bandstructure of this defective carbon nanotube varying due to the external electric field is distinctly different from those of the perfect nanotube and defective zigzag nanotube. This variation in bandstructure strongly depends on not only the chirality of the nanotube and also the applied direction of the transverse electric field. A mechanism is proposed to explain the response of the local energy gap between the valence band maximum state and the local gap state under external electric field. Several potential applications of these phenomena are discussed.     

椭圆截面金纳米管近场增强特性的研究

本文基于时域有限差分方法(finite difference time domain, FDTD)研究了入射光波长、入射光偏振方向、纳米管几何形状、 管壁厚度及内核和包埋介质的变化对椭圆截面金纳米管近场分布特征的影响. 研究发现, 入射光波长为纳米管等离激元共振波长时, 纳米管近场增强最大; 入射光偏振方向与椭圆长轴夹角的增加会导致管内的场强迅速增大; 椭圆管半短轴变大可以调节纳米管场强分布从两端高、中间低变化为均匀分布; 内核和包埋介质介电常数的增大均会使得纳米管内部及周围场强逐渐减弱.     

Electromechanical buckling analysis of boron nitride nanotube using molecular dynamic simulation

In this paper, the effect of electric field on axial buckling of boron nitride nanotubes is investigated. For this purpose, molecular dynamics simulation and continuum mechanics are used for the first time simultaneously. In molecular dynamics simulation, the potential between boron nitride atoms is considered as Tersoff and Timoshenko beam theory is used in continuum mechanics. In this paper, buckling of zigzag and armchair boron nitride nanotubes are investigated. Here, the effects of the electric field and the length of the boron nitride nanotube on the critical load are investigated and it is shown that the effect of the electric field is different with respect to the arrangement of atoms in the boron nitride nanotubes. In fact, the electric field creates axial and torsional loads on the zigzag and armchair nanotube, respectively. Axial buckling of the zigzag nanotube is dependent on the electric field, whereas in the armchair nanotubes, the electric field changes have no effect on the axial buckling. To better understand the impact of the electric field on axial buckling, these results are compared with the continuum mechanics.     

A Two-Dimensional Extremely Short Optical Pulse in a System of Carbon Nanotubes in a Direct Current Electric Field

The effect of an external dc electric field on the two-dimensional extremely short optical pulse propagating in a zigzag carbon nanotube array was investigated. The electromagnetic field evolution in the investigated nanotube system is described by the Maxwell equations. Using numerical simulation, the interaction between the pulse electromagnetic field and the external electric field applied to the carbon nanotube array is analyzed.     

一种平行背栅极碳纳米管阵列的场增强因子计算

建立一种平行背栅极碳纳米管阵列阴极,基于电场叠加原理,利用镜像电荷法对其进行计算,给出碳纳米管顶端表面电场增强因子。在此基础上,进一步分析器件各类参数对电场增强因子的影响。分析表明,碳纳米管阵列阴极具有最佳阵列密度,其对应碳纳米管间距大约为碳纳米管高度的两倍,靠阴极阵列边缘部位的碳纳米管发射电子能力比其中心部位的大。除了碳纳米管的长径比之外,栅极宽度、栅极厚度和栅极间距等也对电场增强因子有一定的影响:栅极越宽,场增强因子越大;而栅极厚度、栅极间距越大,场增强因子就越小。     

碳纳米管端口的场蒸发

将单根多壁碳纳米管(multi-walled carbon nanotube,MWCNT)组装在W针尖上并送入超高真空场发射/场离子显微镜(Ultrahigh Vacuum Field-emission/Field-Ion microscope,UHV-FEM/FIM)进行场蒸发及场发射研究.结果表明,场蒸发可以降低MWCNT的逸出功,从而增强其场发射能力.估算MWCNT的蒸发场低于1.3×10⁸V·cm^-1,且在此场强下的平均蒸发速率为9.4nm·min^-1.定性讨论了MWCNT的蒸发场大大低于C的理论值的原因.首先,通过场解吸获得的清洁端口上有较多悬挂键,平均每个C原子的配位数较小,所以升华热较低.其次,可能存在于MWCNT中的H原子会在强场下碰撞端口的C原子,使其更易蒸发.以上结果显示了利用场蒸发剪短碳纳米管从而改善其场发射特性的可行性. 关键词： 碳纳米管 场蒸发 场发射     

一种平行栅碳纳米管阵列阴极的场发射特性研究

建立一种平行栅碳纳米管阵列阴极,利用悬浮球模型和镜像电荷法进行计算,给出碳纳米管顶端表面电场与电场增强因子的解析式. 在此基础上,进一步分析器件各类参数以及接触电阻对阴极电子发射性能的影响. 分析表明,碳纳米管间距大约为2倍碳纳米管高度时阵列阴极的分布密度最佳,靠边缘部位的碳纳米管发射电子能力比其中心部位的大;除碳纳米管的长径比之外,栅极宽度和栅极间距也对电场增强因子有一定作用;接触电阻的存在大幅度降低碳纳米管顶端表面电场与发射电流,而接触电阻高于800 kΩ时,器件对阳极驱动电压的要求更高. 关键词： 平行栅碳纳米管阵列 悬浮球 场增强因子 接触电阻     

Hydrogen adsorption on SiC nanotube under transverse electric field

Using density functional theory, we present a model to illustrate that under a transverse electric field the overall amount of hydrogen storage can be increased on the SiC nanotube. Due to the cylindrical shape of the nanotube, an electric field does not have the similar effects on the different adsorption sites. Although it has the desired effects on some sites, the electric field may lead the binding energy to decrease on some other sites. We demonstrate that the binding energy decreases slightly just on the two small areas and increases significantly on the largest part of the nanotube surface.     

Electron holography of field-emitting carbon nanotubes

Electron holography performed in situ inside a high resolution transmission electron microscope has been used to determine the magnitude and spatial distribution of the electric field surrounding individual field-emitting carbon nanotubes. The electric field (and hence the associated field emission current) is concentrated precisely at the tips of the nanotubes and not at other nanotube defects such as sidewall imperfections. The electric field magnitude and distribution are stable in time, even in cases where the nanotube field emission current exhibits extensive temporal fluctuations.     

Electromagnetic scattering of the carbon nanotubes excited by an electric line source

An analytical solution is presented for the electromagnetic scattering from an infinite-length metallic carbon nanotube and a carbon nanotube bundle. The scattering field and scattering cross section are predicted using a modal technique based on a Bessel and Hankel function for the electric line source and a quantum conductance function for the carbon nanotube. For the particular case of an isolated armchair (10, 10) carbon nanotube, the scattered field predicted from this technique is in excellent agreement with the measured result. Furthermore, the analysis indicates that the scattering pattern of an isolated carbon nanotube differs from that of the carbon nanotube bundle of identical index (m, n) metallic carbon nanotubes.     

Influence of DC electric field on the Lennard-Jones potential and phonon vibrations of carbon nanotube on catalyst

Influence of DC electric field on carbon nanotube (CNT) growth in chemical vapor deposition is studied. Investigation of electric field effect in van der Waals interaction shows that increase in DC electric field raises the magnitude of attractive term of the Lennard-Jones potential. By using a theoretical model based on phonon vibrations of CNT on catalyst, it is shown that there is an optimum field for growth. Also it is observed that CNT under optimum electric field is longer than CNT in the absence of field. Finally, the relation between optimum DC electric field and type of catalyst is investigated and for some intervals of electric field, the best catalyst is introduced, which is very useful for experimental researches.     

对碳纳米管阵列的场发射电场增强因子以及最佳阵列密度的研究

研究了外电场、碳纳米管自身线度、尤其管的阵列密度对碳纳米管的场发射性能的影响,从理论上深入探索碳纳米管阵列的电场增强因子并提出改善其场发射电子性能的有效途径.研究结果表明,碳纳米管阵列的电场增强因子的数量级一般为102—103,并对任何长径比的碳纳米管阵列,都对应着一个最佳阵列密度,当碳纳米管阵列密度取此最佳密度值时,其电场增强因子明显提高.这里的理论研究对弄清碳纳米管的场发射机理及实验合成高发射性能的碳纳米管阵列有一定的意义 关键词： 碳纳米管阵列 最佳阵列密度 电场增强因子 长径比     

单壁碳纳米管束针尖增强近场拉曼光谱探测实验研究

针尖增强近场拉曼光谱术是最近发展起来的光谱技术。金属探针在获得样品纳米局域表面形貌的同时,受激光激发,在针尖附近产生增强电磁场,得到与形貌位置精确对应的针尖增强局域拉曼光谱,形貌和光谱的结合实现了纳米局域的光谱指认。文章建立了一套针尖增强近场拉曼光谱测量装置,并用此装置对电弧法合成的单壁碳纳米管进行了近场拉曼光谱探测。测量了直径为100 nm单壁碳纳米管束的针尖增强拉曼光谱,进一步得到至多3根单壁碳纳米管的近场拉曼光谱,实现了超衍射分辨光谱探测。通过与远场拉曼光谱比较发现,针尖增强近场拉曼光谱的增强因子大于230倍。实验证明,同时具有超衍射空间分辨和拉曼光谱信号增强能力的针尖增强近场拉曼光谱术将是纳米材料和纳米结构表征的一种重要方法。