Surface structure of alumina ceramics during irradiation by a pulsed electron beam

The structural transformations that occur in the near-surface layer in alumina ceramics during irradiation by a pulsed electron beam generated by a forevacuum plasma electron source are studied. The modification of the surface properties of the ceramics is shown to be caused by the formation of regions consisting of close-packed and identically oriented crystallites within every grain. The crystallites are elongated: their length and width are 0.5–1.5 μm and the transverse size is 0.1–0.2 μm.     

Surface segregation in Pt-Au alloys studied using Auger electron spectroscopy

Temperature dependent surface segregation studies using Auger electron spectroscopy have been performed on three different Pt-Au alloys, containing 2, 5 and 90 wt% Au. By utilizing Auger transitions of different kinetic energies and model segregation profiles, an estimate of the in-depth variation in composition was made. Strong surface segregation of Au was observed in the three alloys.     

Quantitative measurements of Ge surface segregation during SiGe alloy growth

Ge segregation during the growth of Si_{1 − x}Ge_x alloys (x = 5, 10, 20, and 40%) was studied using X-ray photoelectron spectroscopy. The alloys were grown in thicknesses up to 20.0 nm at 500°C to measure quantitatively the amount of segregated surface Ge. The length of alloy needed to reach steady-state growth edge was found to decrease with increasing alloy concentration (4.8, 2.8, 2.4, and 2.0 nm, respectively). It was found that each alloy had a complete monolayer of Ge on the surface and an increasing amount of segregated Ge in the second layer (20, 55, 80, and 95%, respectively) during steady-state growth. An increase in the temperature of alloy growth (400–750°C) resulted in an increase in the leading edge of alloy growth but did not change the amount of segregated Ge during steady-state growth. We propose that film stress is responsible for the amount of Ge segregation.     

Surface temperature measurements during ion bombardment

A copper constantan thin film thermocouple has been used to measure the surface temperature of a target during ion bombardment. Argon beams of 50–100 keV energy and 0–300 mwatt power have been used as heat source on a target in contact with a massive copper holder maintained at 80 or at 300K. The thermal contact has been changed from that ensured by the mechanical pressure of a metal spring to that obtained by gluing the target to the holder with a silver base paste. The surface temperature reaches a steady state value after about 150 s of bombardment and its maximum value depends on the beam power and on the quality of the thermal contact with the holder. Beam induced surface temperature increase as lar ge as 270°C are measured in the case of a bad thermal contact and for a beam power of 300 mwatt.     

Surface segregation in an Ir-2%Pt alloy studied using Auger electron spectroscopy

The surface segregation in an Ir-2%Pt alloy has been studied using Auger electron spectroscopy. The variation of the probing depth with Auger electron energy was utilized for estimating the in-depth segregation profile. After annealing at 950°C and cooling to room temperature, Auger spectra were recorded in five different kinetic energy regions. The quantitative analysis of four of these spectra was performed using computer added spectra from pure Ir and Pt. A strong segregation of Pt to the surface layer was observed.     

真空中电子辐照下聚四氟乙烯沿面闪络电压特性

为了研究聚四氟乙烯材料(PTFE)在空间粒子环境中放电规律及其影响因素,通过实验获得了高真空低能电子辐照下PTFE高压直流沿面闪络电压,并采用等温电位衰减法测试了PTEE在辐照前及辐照后的陷阱密度,分析了影响PTEE沿面闪络电压的因素。研究结果表明：相比于无辐照时PTFE沿面闪络电压,当辐照电子能量为19~25 keV时,闪络电压明显更高;在电子束流密度不变的情况下,电子能量越高,材料表面正电荷密度越小,陷阱密度与电导率越大,电场畸形程度越小,因此闪络电压升高;当电子能量一定时,束流密度越高,初始电子数量和二次电子数量越多,因此闪络电压降低。     

Surface segregation of InGaAs films by the evolution of reflection high-energy electron diffraction patterns

Surface segregation is studied via the evolution of reflection high-energy electron diffraction (RHEED) patterns under different values of As 4 BEP for InGaAs films. When the As 4 BEP is set to be zero, the RHEED pattern keeps a 4×3/(n×3) structure with increasing temperature, and surface segregation takes place until 470 C. The RHEED pattern develops into a metal-rich (4×2) structure as temperature increases to 495 C. The reason for this is that surface segregation makes the In inside the InGaAs film climb to its surface. With the temperature increasing up to 515 C, the RHEED pattern turns into a GaAs(2×4) structure due to In desorption. While the As 4 BEP comes up to a specific value (1.33×10 4 Pa–1.33×10 3 Pa), the surface temperature can delay the segregation and desorption. We find that As 4 BEP has a big influence on surface desorption, while surface segregation is more strongly dependent on temperature than surface desorption.     

Surface lifetime degradation in Si and Ge under low energy electron irradiation

The bombardment of n-type Ge and Si by 10–30 keV electron beams is shown to reduce the surface lifetime τ_P of minority carriers but not to affect mobility μ_P or diffusion constant D_P. For experiments, the electron beam in a scanning electron microscope is replaced a chopped light source to perform modified Haynes-Shockley experiment, and the measurements is used to calculate μ, D and τ. The reduction in τ is interpreted in terms of an increase in surface recombination velocity s. At a dose of approximately 10¹⁷ electrons cm^?2 for Ge and 10¹⁵ electrons cm^?2 for Si, a saturation value for s appears to be reached after which further bombardment has no effect. The values of τ obtained from both light and SEM Haynes-Shockley experiments performed in vacuum agree within approximately 5% both prior to and after bombardment. The initial values of lifetime can be restored by etching the samples.     

高能电子辐照绝缘厚样品的表面电位动态特性

采用数值计算和实验测量相结合的方法, 阐明了高能电子束照射下绝缘厚样品的表面电位和电子产额动态特性. 结果表明: 由于电子在样品内部的散射和输运, 沿着深度方向, 空间电位先缓慢下降到最小值, 然后逐渐升高并趋近于零; 随着电子束照射, 样品的表面电位逐渐下降, 可至负千伏量级, 电子总产额逐渐增大至一个接近于1的稳定值; 电子束停止照射后, 长时间放置下, 表面电位将逐渐升高, 但带电并不会消除; 表面电位随电子束能量的升高近似线性下降, 随入射角的增大而升高, 而随样品厚度的增大仅略有下降.     

Formation of silver nanoparticles in photothermorefractive glasses during electron irradiation

The formation of silver nanoparticles in photothermorefractive glasses during electron irradiation and subsequent heat treatment is experimentally studied. The optical density spectra of samples at various stages of heat treatment are compared. The formation of metallic nanoparticles is shown to occur during both electron irradiation and subsequent heat treatment. Nanoparticles are localized in layers parallel to the surface. At the initial stage of nanoparticle formation, the key role is played by the appearance of a negative bulk charge in the near-surface layer in glass, which results in the field-assisted migration of positive metal ions and a characteristic layered distribution of metallic nanoparticles in the glass volume.     

Surface segregation in HAYNES 230 alloy

The surface segregation in the Ni-based alloy HAYNES 230 was studied by Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy between 400 and 1100 °C. The qualitative variations of the surface contents of S, P, W, Mo, N, Si, and Mn were determined as a function of annealing temperature and time. It was found that at 925 °C the maximum coverage of sulphur at the alloy surface is in the range 0.06-0.15 monolayers. Chromium evaporation from the HAYNES 230 surface under UHV conditions is clearly evidenced for annealing at 1100 °C.     

Electrical measurements of the electron irradiation induced E- and H-traps in GaAs under hydrostatic pressure

The change of resistivity of the 2.3 MeV-electron-irradiated bulk n- and p-GaAs have been measured at hydrostatic pressure up to 5 kbar at RT. Corrections for the changes in free electron and hole mobilities with pressure have been neglected. The resistivity changes are explained by a dependence on pressure of the ionisation energy of the radiation-induced E- and H-traps. The results indicate that most from these radiation- induced levels moves away from the conduction-band edge (γ_c-point) at a rate approximately (0.8?1.0)γ_G, here γ_G=11.6×10^?6 eV bar^?1 is the energy gap pressure coefficient for GaAs at RT. The high changes in ionization energies of E2 to E5-traps upon pressure are to be compared with the lower changes in ionization energies found for the deep-lying impurity levels. In accordance with the theoretical investigation it was suggested that most of the investigated radiation-induced levels in GaAs are t₂-states of Ga- and As-vacancies.     

Surface free energy of ultra-high molecular weight polyethylene modified by electron and gamma irradiation

Surface free energy of biocompatible polymers is important factor which affects the surface properties such as wetting, adhesion and biocompatibility. In the present work, the change in the surface free energy of ultra-high molecular weight polyethylene (UHMWPE) samples, which is produced by electron beam and gamma ray irradiation were, investigated. Mechanism of the changes in surface free energy induced by irradiations of doses ranging from 25 to 500 kGy was studied. FTIR technique was applied for sample analysis. Contact angle measurements showed that wettability and surface free energy of samples have increased with increasing the irradiation dose, where the values of droplet contact angle of the samples decrease gradually with increasing the radiation dose. The increase in the wettability and surface free energy of the irradiated samples are attributed to formation of hydrophilic groups on the polymer surface by the oxidation, which apparently occurs by exposure of irradiated samples to the air.     

强流脉冲电子束诱发纯钛表面的微观结构及应力状态

利用强流脉冲电子束(HCPEB)装置对金属纯钛进行轰击,采用X射线衍射,扫描电子显微镜及透射电子显微镜技术详细分析了轰击样品表层的结构和缺陷. X射线衍射分析表明, HCPEB能够在材料表层诱发幅值为 GPa量级的压应力,并在(100), (102)和(103)晶面出现择优取向.表层微观结构的观察表明: HCPEB轰击后材料表层发生了马氏体相变,形成了大量的片状马氏体组织; 此外, HCPEB轰击还在辐照表面诱发了强烈的塑性变形,一次轰击后,晶粒内部的塑性变形以(100)晶面的位错滑移为主,位错密度显著提高;多次轰击后,样品变形结构发生变化,变形孪晶的数量明显增多. 这些变形微结构不仅影响表层的织构演化行为,而且还能细化晶粒,进而提高材料表面硬度, 为HCPEB技术进行纯钛表面强化提供了一条有效的途径.     

Surface chemical changes of CaTiO3:Pr upon electron beam irradiation

Surface chemical changes of CaTiO₃:Pr³⁺ phosphor material and their effect on the red emission intensity of the ¹D₂→³H₄ transition of Pr³⁺, upon electron beam irradiation are presented. Red emission at 613 nm was obtained upon probing the surface with a 2 keV electron beam. The surface chemical changes and Pr³⁺ red emission were monitored using an Auger Electron Spectroscopy (AES) and Cathodoluminescence (CL) spectrometer, respectively. The CL intensity decreased with a decrease in O on the surface at 1×10⁻⁸ Torr base pressure and decreased with an increase in O on the surface at 1×10⁻⁶ Torr O₂. The X-ray Photoelectron Spectroscopy (XPS) revealed that CL degradation at 1×10⁻⁶ Torr O₂ is due to the formation of CaO and CaO_x as well as TiO₂/Ti₂O₃ non-luminescent species on the surface.     

强流脉冲电子束作用下金属锆的微观结构与应力状态

利用强流脉冲电子束 (HCPEB) 技术对金属纯锆进行表面处理, 采用X射线衍射, 扫描电子显微镜及透射电子显微镜详细分析了辐照诱发的表层微观结构和缺陷. X射线分析结果表明, HCPEB辐照后在材料表层诱发幅值为GPa量级的压应力, 并形成{0002}, {1012}, {1120}及{1013}织构. 表层微观结构观察表明, 与其他金属材料不同, HCPEB辐照在材料表层诱发的熔坑数量极少, 多次轰击甚至几乎没有表面熔坑的形成. 此外, 在快速的加热和冷却状态下, 在表面熔化层形成大量的超细晶粒结构, 同时诱发马氏体相变和强烈的塑性变形. 1次HCPEB辐照后表层内形成的变形微结构以位错为主, 孪晶数量较少; 5 次辐照样品的位错密度迅速增高, 孪晶数量也显著增加; 10次辐照后样品中的变形微结构以变形孪晶为主, 且出现二次孪晶现象. 表层晶粒内部变形的晶体学特征不仅决定了表层的织构演化行为, 而且还起到细化晶粒的作用, 为纯锆及锆合金表面强化提供了一条有效的途径. 关键词： 强流脉冲电子束 纯锆 微观结构 应力状态