Effect of plasticizer on ionic transport and dielectric properties of PVA-H3PO4 proton conducting polymeric electrolytes

Solid polymer electrolytes have attracted considerable attention due to their wide variety of electrochemical device applications. The present paper is focused on the effect of plasticizer to study the structural, electrical and dielectric properties of PVA-H₃PO₄ complex polymer electrolytes. XRD results show that the crystallinity decreases due to addition of plasticizer up to particular amount of polyethylene glycol (PEG) and thereafter it increases. Consequently, there is an enhancement in the amorphicity of the samples responsible for process of ion transport. This characteristic behavior can be verified by the analysis of the differential scanning calorimetry results. FTIR spectroscopy has been used to characterize the structure of polymer and confirms the complexation of plasticizer with host polymeric matrix. Electrical and dielectric properties have been studied for different wt% of plasticizer and their variations have been observed. The addition of PEG has significantly improved the ionic conductivity. The optimum ionic conductivity value of the plasticized polymer electrolyte film of 30 wt% PEG has been achieved to be of the order of 10⁻⁴ S cm⁻¹ at room temperature and corresponding ionic transference number is 0.98. The minimum activation energy is found to be 0.25 eV for optimum conductivity condition.     

Effect of heat treatment on the optical and electrical transport properties of Ge15Sb10Se75 and Ge25Sb10Se65 thin films

The effect of heat treatment on the optical and electrical properties of Ge₁₅Sb₁₀Se₇₅ and Ge₂₅Sb₁₀Se₆₅ thin films in the range of annealing temperature 373-723 K has been investigated. Analysis of the optical absorption data indicates that Tauc's relation for the allowed non-direct transition successfully describes the optical processes in these films. The optical band gap (E_g^opt.) as well as the activation energy for the electrical conduction (ΔE) increase with the increase of annealing temperature (T_a) up to the glass transition temperature (T_g). Then a remarkable decrease in both the E_g^opt. and ΔE values occurred with a further increase of the annealing temperature (T_a>T_g). The obtained results were explained in terms of the Mott and Davis model for amorphous materials and amorphous to crystalline structure transformations. Furthermore, the deduced value of E_g^opt. for the Ge₂₅Sb₁₀Se₆₅ thin film is higher than that observed for the Ge₁₅Sb₁₀Se₇₅ thin film. This behavior was discussed on the basis of the chemical ordered network model (CONM) and the average value for the overall mean bond energy 〈E〉 of the amorphous system Ge_xSb₁₀Se_90−x with x=15 and 25 at%. The annealing process at T_a>T_g results in the formation of some crystalline phases GeSe, GeSe₂ and Sb₂Se₃ as revealed in XRD patterns, which confirms our discussion of the obtained results.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

Synthesis, structural and electrical properties of La and Nb modified Bi4Ti3O12 ferroelectric ceramics

Polycrystalline ceramic samples of Bi_4−xLa_xTi₃O₁₂ (x=0.0, 0.5 and 1) and Bi_3.5La_0.5Ti_3−yNb_yO₁₂ (y=0.02 and 0.04) have been synthesized by standard high temperature solid state reaction method using high purity oxides and carbonates. The effect of lanthanum doping on Bi-site and Nb doping on Ti-site on the structural and electrical properties of Bi₄Ti₃O₁₂ powders was investigated by X-ray diffraction, scanning electron microscopy, dc conductivity and dielectric studies. A better agreement between the observed and calculated X-ray diffraction pattern was obtained by performing the Rietveld refinement with a structural model using the non-centrosymmetric space group Fmmm in all the cases. A better agreement between observed and calculated d-values also shows that the lattice parameters calculated using the Rietveld refinement analysis are better. The increase in lanthanum and niobium contents does not lead to any secondary phases. It is found that La³⁺ doping reduces the material grain size and changes its morphology from the plate-like form to a spherical staking like form. The substitution of Nb for Ti ions affected the degree of disorder and modified the dielectric properties leading to more resistive ceramic compounds. The shape and size of the grains are strongly influenced by the addition of niobium to the system. The activation energies of all the compounds were calculated by measuring their dc electrical conductivities. The frequency and temperature dependent dielectric behavior of all the compounds have also been studied and the results are discussed in detail. The substitution of La and Nb on the Bi and Ti sites decreased the T_c and improved the dielectric and ferroelectric behavior.     

Densification, microstructural evolution, and dielectric properties of CaTiO3-LaGaO3 microwave ceramics

The relations among the densification, microstructural evolution, and microwave dielectric properties of the (1−x)CaTiO₃-xLaGaO₃ ceramics with x=0.34 and 0.36 were investigated in this study. The results indicated that (1−x)CaTiO₃−xLaGaO₃ ceramics can be densified at 1300 °C with at least 97% of the theoretical value. The ceramics reported an orthorhombic perovskite structure, and no other detectable phases were found. Both ε_r and Q×f values can be improved by slowing the cooling rate during sintering. The ε_r and Q×f values of the 0.64CaTiO₃-0.36LaGaO₃ ceramics at cooling rates of >10 °C/min and 0.1 °C/min are 48.1 and 27,500 and 48.7 and 38,000, respectively. The higher densification obtained at a slower cooling rate plays an important role in improving the microwave dielectric properties.     

Low-temperature sintering and microwave dielectric properties of Ca2Zn4Ti15O36 ceramics

The sintering behavior, microstructures, and microwave dielectric properties of Ca₂Zn₄Ti₁₅O₃₆ ceramics with B₂O₃ addition were investigated. The crystalline phases and microstructures of Ca₂Zn₄Ti₁₅O₃₆ ceramics with 0-10 wt% B₂O₃ addition were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS). The sintering temperature of Ca₂Zn₄Ti₁₅O₃₆ ceramic was lowered from 1170 to 930 °C by 10 wt% B₂O₃ addition. Ca₂Zn₄Ti₁₅O₃₆ ceramics with 8 wt% B₂O₃ addition sintered at 990 °C for 2 h exhibited good microwave dielectric properties, i.e., a quality factor (Qf) 11,400 GHz, a relative dielectric constant (ε_r) 41.5, and a temperature coefficient of resonant frequency (τ_f) 94.4 ppm/°C.     

The role of As2O3 on the stability and some physical properties of PbO-Sb2O3 glasses

PbO-Sb₂O₃ glasses added with different concentrations of As₂O₃ (10-55 mol%) were prepared to understand their IR spectra, elastic properties (Young's modulus E, Shear modulus G, microhardness H), optical absorption and dielectric properties (constant ε, loss tan δ, ac conductivity σ_ac over a moderately wide range of frequency and temperature and breakdown strength in air medium at room temperature). Results have indicated that the structure of the PbO-Sb₂O₃-As₂O₃ glass is more rigid when the concentration of As₂O₃ is around 40 mol%.     

Structural and electrical properties of high-energy ball-milled NASICON type Li1.3Ti1.7Al0.3(PO4)2.9(VO4)0.1 ceramics

Nano-crystallites of Li_1.3Ti_1.7Al_0.3(PO₄)_2.9(VO₄)_0.1 NASICON type material are prepared by means of solid-state reaction of a stoichiometric mixture after milling it for 22 and 55 h. The milling reduces the average crystallite size of the ceramic to 80 and 60 nm, respectively. Mechanical milling changes structural parameters and the strain induced at the grain-boundaries plays a major role in improving electrical conductivity. An order of magnitude increase in electrical conductivity is observed in the material milled for 55 h compared to the unmilled material, which is also reflected in permittivity loss. Modulus and permittivity representations substantiate the constriction effect of grain-boundaries observed in the complex impedance representation.     

Effects of the substitution of gadolinium for neodymium on the crystal and magnetic properties of the Nd1−xGdxCo4B compounds

The crystal and magnetic properties of the Nd_1−xGd_xCo₄B compounds for 0?x?1 have been studied by X-ray powder diffraction, magnetization and differential scanning calorimetry (DSC) measurements. These compounds crystallize in a hexagonal CeCo₄B-type structure with the P6/mmm space group. The substitution of Gd for Nd leads to a decrease of the unit-cell parameter a and the unit-cell volume V, while the unit-cell parameter c remains almost constant. Magnetic measurements indicate that all samples are ordered magnetically below room temperature. The Curie temperatures determined by the DSC technique increase linearly as Nd is substituted by Gd. The saturation magnetization at 5 K decreases upon the Gd substitution up to x=0.6, and then increases again.     

Structural, magnetotransport and morphological studies of Sb-doped La2/3Ba1/3MnO3 ceramic perovskites

We report here the structural, magnetotransport and morphological studies of Sb-doped La_2/3Ba_1/3Mn_1−xSb_xO₃ perovskite manganites. Pristine material La_2/3Ba_1/3MnO₃ (LBMO) shows two insulator-metal (I-M) transitions in the electrical resistivity-temperature (ρ-T) behavior. While the higher temperature transition (T_P1) at ∼340 K is reminiscent of the usual I-M transition in manganites, the lower temperature transition (T_P2) at ∼250 K has been ascribed to the grain boundary (GB) effects arising out of the ionic size mismatch between the ions present at the rare-earth site (La³⁺ and Ba²⁺). With Sb-doping T_P1 shifts to lower temperatures while T_P2 remains invariant up to 3% and shifts to lower temperature for 5%. Room temperature electrical resistivity and the peak values also increase successively with Sb-doping. Scanning electron micrographs of the samples exhibit a gradual increase in their grain sizes with Sb indicating a gradual decrease in the GB density. Shift of T_P1 with doping is explained on the basis of a competition between double-exchange and super-exchange mechanisms. The overall electrical resistivity increases and the shift in the electrical resistivity hump (T_P2) with Sb-doping is found related to be gradually decreasing GB density and the ensuing lattice strain increase at the GBs. The intrinsic magnetoresistance (MR) gets suppressed and extrinsic MR gets enhanced with Sb-doping. At T>T_P1, the electrical resistivity is found to follow the adiabatic polaron hopping model whereas the electron-magnon scattering is found to dominate in the metallic regime (T<T_P1).     

Studies of dielectric and impedance properties of KCa2V5O15 ceramics

A polycrystalline sample, KCa₂V₅O₁₅, with tungsten bronze structure was prepared by a mixed-oxide method at low temperature (i.e., at 630 °C). A preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Surface morphology of the compound was studied by scanning electron microscopy (SEM). Two dielectric anomalies at 131 and 275 °C were observed in the temperature dependency of dielectric response at various frequencies, which may be attributed to the ferroelastic-ferroelectric and ferroelectric-paraelectric transitions, respectively. The nature of variation of the electrical conductivity, and value of activation energy of different temperature regions, suggest that the conduction process is of mixed-type (i.e., ionic-polaronic and space charge generated from the oxygen ion vacancies). The impedance plots showed only bulk contributions, and non-Debye type of relaxation process occurs in the material. A hopping mechanism of electrical transport processes in the system is evident from the modulus analysis. The activation energy of the compound (calculated both from loss and modulus spectrum) is same, and hence the relaxation process may be attributed to the same type of charge carriers.     

Dielectric properties and fluctuating relaxation processes of poly(methyl methacrylate) based polymeric nanocomposite electrolytes

Solid polymer nanocomposite electrolytes (SPNEs) consisted of poly(methyl methacrylate) (PMMA) and lithium perchlorate (LiClO₄) of molar ratio C=O:Li⁺=4:1 with varying concentration of montmorillonite (MMT) clay as nanofiller have been prepared by classical solution casting and high intensity ultrasonic assisted solution casting methods. The dielectric/electrical dispersion behaviour of these electrolytes was studied by dielectric relaxation spectroscopy at ambient temperature. The dielectric loss tangent and electric modulus spectra have been analyzed for relaxation processes corresponding to the side groups rotation and the segmental motion of PMMA chain, which confirm their fluctuating behaviour with the sample preparation methods and also with change of MMT concentration. The feasibility of these relaxation fluctuations has been explained using a transient complex structural model based on Lewis acid–base interactions. The low permittivity and moderate dc ionic conductivity at ambient temperature suggest the suitability of these electrolytes in fabrication of ion conducting electrochromic devices and lithium ion batteries. The amorphous behaviour and the exfoliated/intercalated MMT structures of these nanocomposite electrolytes were confirmed by X-ray diffraction measurements.     

Microwave-assisted synthesis and optical property of CdMoO4 nanoparticles

Microwave-assisted synthesis is a novel method used to synthesize CdMoO₄ nanoparticles in propylene glycol. The effects of reaction time and microwave power on phase, morphologies, and optical properties of CdMoO₄ nanoparticles were studied, using X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM), and UV-visible spectroscopy. The present analyses proved that these crystalline powders were scheelite-type tetragonal structured CdMoO₄, with the crystallite size of 14-20 nm, and 4.51-4.73 eV band gaps, controlled by the synthetic conditions.     

Structural and thermal studies of PVA:NH4I

Proton-conducting polymer electrolytes based on poly vinyl alcohol (PVA; 88% hydrolyzed) and ammonium iodide (NH₄I) has been prepared by solution casting method with different molar ratios of polymer and salt using DMSO as solvent. DMSO has been chosen as a solvent due its high dielectric constant and also its plasticizing nature. The ionic conductivity has been found to increase with increasing salt concentration up to 25 mol% beyond which the conductivity decreases and the highest ambient temperature conductivity has been found to be 2.5×10⁻³ S cm⁻¹. The conductivity enhancement with addition of NH₄I has been well correlated with the increase in amorphous nature of the films confirmed from XRD and differential scanning calorimetry (DSC) analyses. The temperature-dependent conductivity follows the Arrhenius relation. The polymer-proton interactions have been analyzed by FTIR spectroscopy.     

Dielectric and AC ionic conductivity investigations in K3H(SeO4)2 single crystal

Optical observation under the polarizing microscope and DSC measurements on K₃H(SeO₄)₂ single crystal have been carried out in the temperature range 25-200 °C. It reveals a high-temperature structural phase transition at around 110 °C. The crystal system transformed from monoclinic to trigonal. Electrical impedance measurements of K₃H(SeO₄)₂ were performed as a function of both temperature and frequency. The electrical conduction and dielectric relaxation have been studied. The temperature dependence of electrical conductivity indicates that the sample crystal became a fast ionic conductor in the high-temperature phase. The frequency dependence of conductivity follows the Jonscher's universal dynamic law with the relation σ(ω)=σ(0)+Aωⁿ, where ω is the frequency of the AC field, and n is the exponent. The obtained n values decrease from 1.2 to 0.1 from the room temperature phase to fast ionic phase. The high ionic conductivity in the high-temperature phase is explained by the dynamical disordering of protons between the neighboring SeO₄ groups, which provide more vacant sites in the crystal.     

Effect of sulfur additive on density of localized states in nanostructures chalcogenide Se95−xSxZn5 thin films

This paper reports the measurement of space charge limited conduction (SCLC) on the fabricated thin films of Se_95−xS_xZn₅ (0.2≤x≤10) in temperature range 313–353 K for the first time. At high electric fields (E∼10⁴ V/cm), the current could be fitted into the theory of space charge limited conduction, in case of uniform distribution of localized states in mobility gap. The homogeneity and surface morphology of thin films were assessed by scanning electron microscopy. The crystalline nature of the thin films was confirmed by powder XRD and the crystallite size was calculated using Scherer's formula. The crystallite size and density of localized states were found to increase with the increase of sulfur concentration. DC conductivity and activation energy were calculated and found to decrease and increase respectively, with the increase of sulfur concentration.     

Temperature dependent transport properties of CuInSe2-ZnO heterostructure solar Cell

Experimental study of dc and ac transport properties of CuInSe₂/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe₂/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C⁻²-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.     

Effect of Mn-doping on the electrical properties of Cu2GeSe3

In this work we report the temperature dependence of the resistivity ρ of p-Cu₂GeSe₃ and manganese-doped p-Cu₂GeSe₃ at low temperature. It was found that for a intrinsic sample ρ obeys the Shklovskii-Efros-type variable-range hopping resistivity law in the temperature range from 4 to 63 K. This behaviour is governed by generation of a Coulomb gap Δ=78 meV in the density of localized states. We find a low activation term T₀=0.24 K, which is an indication of a large localization length ξ. For Mn-doped sample a metal-insulator transition (MIT) is observed at T=65 K. On the basis of the Mott criterion for metal-insulator transition, the critical carrier density n_c is determined. From the analysis of resistivity data it is concluded that Mn acts as acceptor impurity.     

DSC study of annealing and phase transformations of C60 and C70 polymerized under pressures in the range 9.5-13 GPa

C₆₀ and C₇₀ fullerenes polymerized under pressures between 9.5 and 13 GPa and temperatures between 670 and 1850 K were investigated by differential scanning calorimetry (DSC) in the range 240-640 K. Endothermal heat effects were observed with a peak maximum just below 540 K, a temperature characteristic for breakdown of (2+2) intermolecular links in dimers, 1D and 2D polymers. Exothermal effects, starting from 380 K, were observed for the first time in polymeric fullerenes. These effects are attributed to relaxation processes and to breakdown of other types of intermolecular bonds such as common four-sided rings and (3+3) interlinks.     

Synthesis of earth-abundant Cu2SnS3 powder using solid state reaction

Cu₂SnS₃ (CTS) powder has been synthesized at 200 °C by solid state reaction of pastes consisting of Cu and Sn salts and different sulphur compounds in air. The compositions of the products is elucidated from XRD and only thiourea is found to yield CTS without any unwanted CuS_x or SnS_y. Rietveld analysis of Cu₂SnS₃ is carried out to determine the structure parameters. XPS shows that Cu and Sn are in oxidation states +1 and +4, respectively. Morphology of powder as revealed by SEM shows the powder to be polycrystalline with porous structure. The band gap of CTS powder is found to be 1.1 eV from diffuse reflectance spectroscopy. Cu₂SnS₃ pellets are p-type with electrical conductivity of 10⁻² S/cm. The thermal degradation and metal–ligand coordination in CTS precursor are studied with TGA/DSC and FT-IR, respectively, and a probable mechanism of formation of CTS has been suggested.