The effect of Ag addition on the optical properties of Se90Te10 films

Se₉₀Te_10−xAg_x (0 ≤ x ≤ 6) compositions were prepared by quenching technique. Thin films with different thicknesses of the obtained compositions were deposited on dry clean glass substrates by thermal evaporation technique. Energy dispersive X-ray spectroscopy (EDX) indicates that samples are nearly stoichiometric. X-ray diffraction patterns indicate that they are in the amorphous state. The optical constants, the refractive index n and the absorption index k, have been calculated from transmittance T and reflectance R through the spectral range of 400-2500 nm for the studied films with different thicknesses (165-711 nm). From the analysis of refractive index n data, high frequency dielectric constant ?_∞ was determined. Both ?_∞ and n are found to decrease with the increase of Ag content. The optical band gap is calculated for all compositions from the absorption coefficient analysis. The effect of the Ag addition on the obtained optical parameters has been discussed. The analysis of absorption index k data, revealed the existence of allowed indirect transitions for all compositions. It is indicated also that increase with increasing Ag content.     

Structural, electronic and optical calculations of CaxZn1−xO alloys: A first principles study

First principles density functional calculations, using full potential linearized augmented plane wave (FP-LAPW) method, have been performed in order to investigate the structural, electronic and optical properties of Ca_xZn_1−xO alloy in B1 (NaCl) phase. Dependence of structural parameters as well as the band gap values on the composition x have been analyzed in the range 0?x?1. Calculated electronic structure and the density of states of these alloys are discussed in terms of the contribution of Zn d, O p and Ca p and d states. Furthermore, optical properties such as complex dielectric constants ε(ω), refractive index including extinction coefficient k(ω), normal-incidence reflectivity R(ω), absorption coefficient α(ω) and optical conductivity σ(ω) are calculated and discussed in the incident photon energy range 0-45 eV.     

Effects of Pb addition and heat treatment on optical properties of thermally evaporated Ge1−xSe2Pbx thin films

Thin chalcogenide films of Ge_1−xSe₂Pb_x (x=0, 0.2, 0.4, 0.6 and 0.8) have been prepared by the thermal evaporation technique, from previously synthesized bulk samples. The X-ray diffraction showed the amorphous nature for the as-deposited films and the partially crystalline for the annealed films. The optical constants (the refractive index, n, and absorption index k) were determined for as-deposited and annealed Ge_1−xSe₂Pb_x films of different thicknesses by using spectrophotometeric measurements of the transmittance and reflectance at normal incidence in the spectral range 200-2500 nm. The obtained values of both n and k were found to be independent of the film thickness. The optical absorption edges are described using both the Urbach rule and the indirect transition. In transparent region, the spectral dependences of refractive index were interpreted in the frame of a single oscillator model.     

Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4

We present the infrared and Raman study of the optical phonon modes of the defective compounds ZnGa₂Se₄ and ZnGa₂S₄. Most of the compounds have been found to crystallize in the thiogallate structure (defect chalcopyrite) with space group where all cations and vacancies are ordered. For some Zinc compounds a partially disordered cationic sublattice with various degrees of cation and vacancy statistical distribution, which lead to the higher symmetry (defect stannite), has been reported. For ZnGa₂Se₄ we have found three modes of A symmetry, showing Raman activity only. In addition, we have observed each five modes of B and E symmetry, showing infrared as well as Raman activity. The number of modes and their symmetry assignment, based on polarized measurements, clearly indicate space group for the investigated crystals of ZnGa₂Se₄.Regarding ZnGa₂S₄ we have found three modes exclusively showing Raman activity (2A⊕1B₁), and only eight modes showing infrared as well as Raman activity (3B₂⊕5E). The assignment of the modes has been derived by analyzing the spectral positions of the vibrational modes in comparison to a number of compounds. From the number and symmetry assignment of the optical phonon modes we confirm that ZnGa₂S₄ most likely crystallizes in space group .     

Crystallization kinetics in new Sb14As29Se52Te5 amorphous glass

Differential scanning calorimetry (DSC) under non-isothermal conditions is used to study the crystallization kinetics of Sb₁₄As₂₉Se₅₂Te₅ chalcogenide glass. In addition, two approaches are used to analyze the dependence of glass transition temperature (T_g) on the heating rate (α). One is empirical linear relationship between (T_g) and ln(α). The second approach is the use of straight line vs. 1/T_g for the evaluation of the activation energy for glass transition. The phases at which the alloy crystallizes after the thermal treatment have been identified by using X-ray diffraction. The diffractogram of the transformed material shows the presence of some crystallites of As, Te, AsSb, As₂Se₃, Sb₂Se₃ and AsSe_.5Te_.5 in the residual amorphous matrix.     

Determination and analysis of dispersive optical constant of TiO2 and Ti2O3 thin films

Electron beam evaporation technique was used to prepare TiO₂ and Ti₂O₃ thin films onto glass substrates of thicknesses 50, 500 and 1000 nm for each sample. The structural investigations revealed that the as-deposited films are amorphous in nature. Transmittance measurements in the wavelength range (350-2000 nm) were used to calculate the refractive index n and the absorption index k using Swanepoel's method. The optical constants such as optical band gap , optical conductivity σ_opt, complex dielectric constant, relaxation time τ and dissipation factor tan δ were determined. The analysis of the optical absorption data revealed that the optical band gap E_g was indirect transitions. The optical dispersion parameters E_o and E_d were determined according to Wemple and Didomenico method.     

Oxygen vacancy doping effect on the electrical and magnetic behavior of Ba5−xLaxNb4−xTixO15

We report electric and magnetic properties of oxygen deficient Ba_5−xLa_xNb_4−xTi_xO_15−δ phases, which have been prepared by solid-state reaction method followed by a controlled reduction process under hydrogen atmosphere. The extra electrons added by the formation of the oxygen vacancies (δ) introduce localized spins and the magnetic susceptibility can be described by a temperature-independent contribution and a Curie-Weiss term associated to the Ti³⁺ ion formation. Besides, the experimental resistivity (ρ) data of these four reduced compounds are well described in a wide temperature range with the equation , which suggests the presence of small polarons in the system. Although, all samples present electrical insulating behavior, the electrical resistivity decreases four orders of magnitude for intermediate x values. We interpreted this fact as a consequence of the mix between the localized bands of the Nb and Ti ions, which favors the promotion of carriers due to reduction of the band gap.     

Differences between surface and bulk refractive indices of a-InxSe1−x

Thin films of amorphous indium selenide compounds (a-In_xSe_1−x) are important, e.g. for photovoltaics. The feature of merit in such applications is also the real part of refractive index n of this material. The data on n in literature are divergent. In this paper, the results of investigations on n in the bulk as well as in the interface layers of thin films of a-In_xSe_1−x are presented. The measurements had been performed using optical transmittance and reflectance in spectral range from 1.24 to 1.96 eV of linear polarized radiation that hit the samples with angles of incidence from 0° to 80°. Investigations had been done for sample temperatures from 80 to 340 K. It was found that the refractive index for areas at the free surface n_f is bigger than the refractive index n_b at the interface of thin film-substrate. The averaged over thin film thickness value of real part refractive index have the biggest value in all spectral range. Values of these coefficients increase with increasing the temperature.     

Mn1−xFexIn2Se4: a new layered semiconductor system

Mn_1−xFe_xIn₂Se₄ compounds (x=0.1; x=0.7) were grown by the chemical vapor transport method. X-ray diffraction analysis data show that these compositions crystallize as different polytypes that belong to the hexagonal structure. The crystal symmetry of the sample with x=0.1 belongs to the space group Rm and for the sample with x=0.7 the space group is P6₃mc.The magnetic behavior of both samples has been investigated in the temperature range between 5 and 300 K. Spin-glass-like behavior below the freezing temperature T_f=9 K has been found for the sample with x=0.7. The sample with Fe content x=0.1 behaves as a paramagnet down to the lowest experimental measured temperature. High-temperature susceptibility data follow the Curie-Weiss law with a negative paramagnetic temperature indicating predominant antiferromagnetic interactions.Optical studies reveal that both samples (x=0.1; 0.7) are direct band gap semiconductors. The temperature dependence of the energy gap fits Varshni relation quite well.     

Optical properties of the iron-chalcogenide superconductor FeTe0.55Se0.45

The complex optical properties of the iron-chalcogenide superconductor FeTe_0.55Se_0.45 with T_c=14 K have been examined over a wide frequency range for light polarized in the Fe-Te(Se) planes above and below T_c. At room temperature the optical response may be described by a weakly interacting Fermi liquid; however, just above T_c this picture breaks down and the scattering rate takes on a linear frequency dependence. Below T_c there is evidence for two gap features in the optical conductivity at and . Less than 20% of the free carriers collapse into the condensate for T?T_c, and this material is observed to fall on the universal scaling line for a BCS dirty-limit superconductor in the weak-coupling limit.     

On the optical properties of amorphous Ge-Ga-Se-KBr films prepared by pulsed laser deposition

Amorphous thin films (1 − x)(4GeSe₂-Ga₂Se₃)-xKBr (x = 0, 0.1, 0.2, 0.3) were prepared by the pulsed laser deposition (PLD) technique. The optical parameters were calculated using the Swanepoel method from the optical transmission spectra. The optical band gap () of the studied films increased while the index of refraction decreased when increased the content of KBr. The Tauc slopes were discussed as an indicator of the degree of structural randomness of amorphous semiconductors. The index of refraction decreased and increased after annealing of as-deposited films below the glass transition temperature. The thermal-bleaching and thermal- contraction effects were observed, which are discussed in relation to the reduction in the density of homopolar bonds confirmed by the Raman spectra analysis and the decreased amount of fragments of the as-deposited films, respectively.     

New chalcogenide glasses in the Ag2Te-As2Se3-CdTe system

Chalcogenide glasses from the Ag₂Te-As₂Se₃-CdTe system were synthesized. The basic physicochemical parameters such as density (d), microhardness (HV) and the temperatures of phase transformations (the glass transition T_g, crystallization T_cr and melting T_m) were measured. Compactness and some thermomechanical characteristics such as volume (V_h) and formation energy (E_h) of micro-voids in the glassy network, as well as the module of elasticity E were calculated. The overall mean bond energy 〈E〉, the mean coordination number Z, the mean bond energy of the average cross-linking/atom and the average bond energy per atom of the “remaining matrix”— and , as well as the average heteropolar bond energy E_hb, the degree of “cross-linking/atom” P_p and the radial bond strength were determined.The correlation between the composition and properties of the Ag₂Te-As₂Se₃-CdTe glasses was established and comprehensively discussed.     

Optical and physical properties of different composition of InxSe1−x thin films

Thin film binary alloys of In_xSe_1−x (0.05?x?0.30) have been prepared by the thermal evaporation technique. The optical transmission and reflection spectrum of these films were measured in the range 300-1100 nm. Both refractive index, n and extinction coefficient k have been determined from transmission and reflection measurements in terms of Murmann's equations. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. The width of band tail is determined and the optical absorption edge is described using the ‘non-direct transition’ model proposed by Tauc. Finally, the relationship between the optical gap and chemical composition in In_xSe_1−x amorphous system is discussed in terms of the average heat of atomization H_s and average coordination number N_c. The results of these calculations can be used rationalize the observed optical properties of these materials. Finally, the chemical bond approach has been also applied to interpret the decrease of the glass optical gap with increasing In content.