Oxygen-vacancy-related high-temperature dielectric relaxation and electrical conduction in 0.95K0.5Na0.5NbO3-0.05BaZrO3 ceramic

The crystal structure and dielectric properties of 0.95K_0.5Na_0.5NbO₃-0.05BaZrO₃ (KNN-BZ) ceramic have been investigated by X-ray diffraction and dielectric measurement. A rhombohedral distortion was caused and the dielectric permittivity near Curie temperature was significantly enhanced by introducing BZ into KNN. The dielectric and conductivity properties of the sample were studied by using AC impedance spectroscopy and universal dielectric relaxation law in detail. The typical high-temperature dielectric relaxation process was confirmed to be related to the oxygen vacancies inside the ceramic. The effect of lattice distortion on the activation energy for oxygen vacancy migration in KNN-BZ was discussed by comparing with KNN and KNN-BaTiO₃.     

Thermal, electrical, and electrochemical properties of Lanthanum-doped Ba0.5Sr0.5 Co0.8Fe0.2O3-δ

Crystal structure, thermogravimetry (TG), thermal expansion coefficient (TEC), electrical conductivity and AC impedance of (Ba_0.5Sr_0.5)_1-xLa_xCo_0.8Fe_0.2O_3-δ (BSLCF; 0.05?x?0.20) were studied in relation to their potential use as intermediate temperature solid oxide fuel cell (IT-SOFC) cathode. A single cubic pervoskite was observed by X-ray diffraction (XRD). The TEC of BSLCF was increasing slightly with the increasing content of La, and all the compounds showed abnormal expansion at high temperature. Proved by the TG result, it was associated with the loss of lattice oxygen. The electrical conductivity, which is the main defect of Ba_0.5Sr_0.5 Co_0.8Fe_0.2O_3-δ (BSCF), was improved by La doping, e.g., the compound of x=0.20 demonstrated a conductivity of σ=376 S cm⁻¹ at 392 °C. The increase of electrical conductivity resulted from the increased concentration of charge carrier induced by La doping. In addition, the AC impedance revealed the better electrochemical performance of BSLCF. For example, at 500 °C, the sample with composition x=0.15 yielded the resistance values of 2.12 Ω cm², which was only 46% of BSCF.     

DC and AC conductivities of (As2S3)100−x(AsSe0.5Te0.5I)x chalcogenide glasses

The DC and AC conductivities of samples from the system (As₂S₃)_100−x(AsSe_0.5Te_0.5I)_x, where x=0, 5, 10, 15, 20, 25, 30, 35, 50, 70 and 90 mol%, were measured as a function of temperature. Besides, the AC conductivities of the samples with x=10 and 30 were measured as a function of frequency from room temperature to the glass transition temperature. The DC conductivity dependence on temperature is of the Arrhenius type, whereas the value of the pre-exponential factor suggests the electrical conduction by localized states in the band tails and by localized states near the Fermi level. The small values of the conduction activation energy (10⁻²-10⁻¹ eV) obtained at higher frequencies suggest that the conduction in these materials is due to hopping of charge carriers between close defect states near the Fermi level.     

Complex impedance spectroscopy studies of (La0.70−xNdx)Sr0.30Mn0.70Cr0.30O3 (x≤0.30) perovskite compounds

The transport properties of Nd-doped perovskite materials (La_0.7−xNd_x)Sr_0.3Mn_0.7Cr_0.3O₃ (x≤0.30) were investigated using impedance spectroscopy techniques over a wide range of temperatures and frequencies. AC conductance analyses indicate that the conduction mechanism is strongly dependent on temperature and frequency. The DC conductance plots can be described using the small polaron hopping (SPH) model, with an apparent reduction of the polaron activation energy below the Curie temperature T_C. Complex impedance plots exhibit semicircular arcs described by an electrical equivalent circuit. Off-centered semicircular impedance plots show that the Nd-doped compounds obey to a non-Debye relaxation process. The conductivity of grains and grain-boundaries has been estimated. The activation energies calculated from the conductance and from time relaxation analyses are comparable. This indicates that the same type of charge carriers is responsible for both the electrical conduction and relaxation phenomena.     

Crystal structure,NMR study,dielectric relaxation and AC conductivity of a new compound [Cd3(SCN)2Br6(C2H9N2)2]n

The crystal structure, the ¹³C NMR spectroscopy and the complex impedance have been carried out on [Cd₃(SCN)₂Br₆(C₂H₉N₂)₂]_n. Crystal structure shows a 2D polymeric network built up of two crystallographically independent cadmium atoms with two different octahedral coordinations. This compound exhibits a phase transition at (T=355±2 K) which has been characterized by differential scanning calorimetry (DSC), X-rays powder diffraction, AC conductivity and dielectric measurements. Examination of ¹³C CP/MAS line shapes shows indirect spin–spin coupling (¹⁴N and ¹³C) with a dipolar coupling constant of 1339 Hz. The AC conductivity of this compound has been carried out in the temperature range 325–376 K and the frequency range from 10⁻² Hz to 10 MHz. The impedance data were well fitted to two equivalent electrical circuits. The results of the modulus study reveal the presence of two distinct relaxation processes. One, at low frequency side, is thermally activated due to the ionic conduction of the crystal and the other, at higher frequency side, gradually disappears when temperature reaches 355 K which is attributed to the localized dipoles in the crystal. Moreover, the temperature dependence of DC-conductivity in both phases follows the Arrhenius law and the frequency dependence of σ(ω,T) follows Jonscher's universal law. The near values of activation energies obtained from the conductivity data and impedance confirm that the transport is through the ion hopping mechanism.     

Structure and electrical properties of SrO-borovanadate (V2O5)0.5(SrO)0.5−y(B2O3)y glassses

SrO-borovanadate glasses with nominal composition (V₂O₅)_0.5(SrO)_0.5−y(B₂O₃)_y, 0.0≤y≤0.4 were prepared by a normal quench technique and investigated by direct current (DC) electrical conductivity, inductively coupled plasma (ICP) spectroscopy, infrared (IR) spectroscopy and X-ray powder diffraction (XRD) studies in an attempt to understand the nature of mechanism governing the DC electrical conductivity and the effect of addition of B₂O₃ on the structure and electrical properties of these glasses. XRD patterns confirm the amorphous nature of the present glasses and actual compositions of the glasses were determined by ICP spectroscopy. The temperature dependence of DC electrical conductivity of these glasses has been studied in terms of different hopping models. The IR results agree with previous investigations on similar glasses and it has been concluded that similar to SrO-vanadate glasses, metavandate chain-like structures of SrV₂O₆ and individual VO₄ units also occur in SrO-borovanadate glasses. The SrV₂O₆ and VO_n polyhedra predominate in the low B₂O₃-containing SrO-borovanadate glasses as B substitutes into the V sites of the various VO_n polyhedra and only when the concentration of B₂O₃ exceeds the SrO content do BO_n structures appear. This qualitative picture of three distinct structural groupings for Sr-vanadate and Sr-borovanadate glasses is consistent with the proposed glass structure on previous IR and extended X-ray absorption fine structure (EXAFS) studies on these types of glasses. The conductivity results were analyzed with reference to theoretical models existing in the literature and the analysis shows that the conductivity data are consistent with Mott's nearest neighbor hopping model. Analysis of the conductivity data shows that they are consistent with Mott's nearest neighbor hopping model. However, both Mott VRH and Greaves models are suitable to explain the data. Schnakenberg's generalized polaron hopping model is also consistent with temperature dependence of activation energy. However, various model parameters such as density of states, hopping energy, etc. obtained from the best fits were not found to be in accordance with the prediction of the Mott model.     

AC electrical properties of the mixed crystal (NH4)3H(SO4)1.42(SeO4)0.58

The frequency dependence of the AC conductivity of (NH₄)₃H(SO₄)_1.42(SeO₄)_0.58 (NHSSe) has been presented in the temperature range (299-393 K). The conductivity data has been analysed in terms of two theoretical models: hopping over a potential barrier model and quantum-tunnelling model. Values of the exponent s, decrease from 1.08 to 0.91 with increasing temperature and the experimental data revel that the hopping model is the rate determining mechanism.     

Electrical properties of SrBi2(Nb0.5Ta0.5)2O9 ceramics

Aurivillius SrBi₂(Nb_0.5Ta_0.5)₂O₉ (SBNT 50/50) ceramics were prepared using the conventional solid-state reaction method. Scanning electron microscopy was applied to investigate the grain structure. The XRD studies revealed an orthorhombic structure in the SBNT 50/50 with lattice parameters a=5.522 Å, b=5.511 Å and c=25.114 Å. The dielectric properties were determined by impedance spectroscopy measurements. A strong low frequency dielectric dispersion was found to exist in this material. Its occurrence was ascribed to the presence of ionized space charge carriers such as oxygen vacancies. The dielectric relaxation was defined on the basis of an equivalent circuit. The temperature dependence of various electrical properties was determined and discussed. The thermal activation energy for the grain electric conductivity was lower in the high temperature region (T>303.6 °C, E_a−ht=0.47 eV) and higher in the low temperature region (T<303.6 °C, E_a−lt=1.18 eV).     

Research on charge-ordering state in La0.5Sr0.5MnO2.88 and La0.5Sr0.5Mn0.5Ti0.5O3 systems

The structural, magnetic and transport properties of La_0.5Sr_0.5MnO_2.88 and La_0.5Sr_0.5Mn_0.5Ti_0.5O₃ samples have been investigated systematically. Indeed, this series has been considered to understand the influence of physical parameters such as oxygen deficiency and titanium doping effect in undoped La_0.5Sr_0.5MnO₃ sample. Ceramic material based on La_0.5Sr_0.5MnO_2.88 exhibits interesting behaviours of charge-ordering (CO), ferromagnetic (FM) states and a good conductivity down to the lowest temperatures. The substitution of Ti for Mn destroyed drastically the CO, damaged the motion of itinerant e_g electrons and changed the local parameters of perovskite cell. A change of the structure from tetragonal to rhombohedral symmetry is observed causing a weakening of double-exchange interaction. The experiment results show that the suppression of the CO is sensitive to the variety of Mn³⁺/Mn⁴⁺ ratio. In a field of 8 T at 10 K, FM and CO phase can be evaluated to be ∼20:80 according to the μ_exp/μ_cal ratio for La_0.5Sr_0.5MnO_2.88, whereas the CO state is suppressed for La_0.5Sr_0.5Mn_0.5Ti_0.5O₃ sample, FM and anti-ferromagnetic (AFM) phase are coexisted and evaluated to be ∼54:46, respectively.     

Maxwell-Wagner characterization of dielectric relaxation in Ni0.8Zn0.2Fe2O4/Sr0.5Ba0.5Nb2O6 composite

Dense composites were prepared through incorporating the dispersed Ni_0.8Zn_0.2Fe₂O₄ ferromagnetic particles into Sr_0.5Ba_0.5Nb₂O₆ ferroelectric matrix. Extrinsic dielectric relaxation and associated high permittivities of the materials are reported in the composites. We used an ideal equivalent circuit to explain electrical responses in impedance formalism. A Debye-like relaxation in the permittivity formalism was also found. Interestingly, real permittivity (ε′) of the sample containing 30% Ni_0.8Zn_0.2Fe₂O₄ shows obvious independence of the temperature at 100 kHz. Dielectric relaxation and high-ε′ properties of the composites are explained in terms of the Maxwell-Wagner (MW) polarization model.     

Structural and electrical characteristics of rare earth simple perovskite oxide La0.57Nd0.1Pb0.33Mn0.8Ti0.2O3

Polycrystalline La_0.57Nd_0.1Pb_0.33Mn_0.8Ti_0.2O₃ (LNPMT) is prepared by the solid-state reaction technique. The formation of single phase material was confirmed by X-ray diffraction studies, and it was found to be a rhombohedral phase at room temperature. The impedance plane plot shows semicircle arcs at different temperatures and an electrical equivalent circuit has been proposed to explain the impedance results. The frequency dependent conductivity spectra follow the universal power law. The activation energy deduced from analysis of the imaginary part of electric modulus and imaginary impedance is found to be ∼75 meV. Such a value of activation energy indicates that the conduction mechanism for the sample is due to electron hopping. The imaginary part of the electric modulus suggests that the relaxation describes the same mechanism at various temperatures.     

The spin wave dispersion relation of disordered Pd0.5Fe0.5

The spin wave spectrum of chemically disordered Pd_0.5Fe_0.5 has been determined by neutron inelastic scattering. At small wavevectors, the dispersion curve is quadratic and isotropic with a spin wave stiffness constant of 47.9 ± 3.3 THz Ų, at room temperature. There is little sign of the anisotropic behaviour observed in the ordered alloy Pd₃Fe.     

Synthesis and dielectric characteristics of La0.5Bi0.5MnO3 ceramics

La_0.5Bi_0.5MnO₃ ceramics with a single phase were prepared by a solid-state reaction method, and their dielectric properties were characterized. Two dielectric relaxations with a giant dielectric constant were identified in the temperature range from 125 to 350 K. The electron hopping between Mn³⁺ and Mn⁴⁺ was found to be the origin of the dielectric relaxation at low temperatures (125–200 K) with an activation energy of 0.18 eV. The high temperature (200–350 K) dielectric relaxation can be attributed to the conduction.     

Effect of Mo doping on magnetic and transport properties of La0.5Sr0.5CoO3

The substitutional effect of Mo on the magnetic and transport properties of double exchange ferromagnets, La_0.5Sr_0.5Co_1−x Mo_xO₃ (0?x?0.2) has been investigated. Substitution of 10% Mo at the Co-site of La_0.5Sr_0.5CoO₃ decreases the Curie temperature by ∼60 K than that of the parent compound and the long-range ferromagnetic ordering disappears for x?0.2. The Mo-doped samples, however, undergo a transition from the parent metallic state to the insulating state below T_c. The insulating state is found to obey Mott's variable range hopping of conduction. The effect of Mo substitution is attributed to the factors namely, (i) the dilution of magnetic Co sublattice, (ii) the reduction of Co⁴⁺/Co³⁺ ratio resulting in a reduced carrier concentration and (iii) disruption of the intermediate spin structure of Co, namely Co³⁺: t_2g⁵e_g¹.     

Elastic stiffness constants and acoustic symmetry of LiY0.5Tb0.5F4

Measurements of ultrasound wave velocities between 4.2 and 293 K have been used to determine the temperature dependences of the seven adiabatic elastic stiffness tensor components of the laser host scheelite structure fluoride LiY_0.5Tb_0.5F₄. The sign of C₁₆ is negative, as found previously for other oxide and fluoride scheelites; therefore for LiY_0.5Tb_0.5F₄ the positions of the acoustic symmetry axes in the XY plane have the same sense as those of the other scheelites. The k and γ axes of acoustic symmetry lie at +31° and + 76° from the + X axis. Transformation of the elastic stiffness constants to a basis comprised of two acoustic symmetry axes together with the +Z axis enables a detailed comparison of the elastic behaviour of LiY_0.5Tb_0.5F₄ with those of other scheelite crystals.     

Transport properties and conduction mechanisms in CuFe2O4 and Cu1−xZnxGa0.3Fe1.7O4 compounds

Single-phase structure of CuFe₂O₄ and Cu_1−xZn_xGa_0.3Fe_1.7O₄; with (0.0≤x≤0.5) are synthesized. Electrical conductivity measurements as a function of temperature are carried out in the frequency range (10²-10⁵ Hz) for the prepared samples. The obtained results of these materials reveal a metallic-like behavior in the low range of frequency. At high frequency regime metallic-to-semiconductor transition has been observed as the compositional parameter x increases. Metallic-like behavior is accompanied with samples having low Zn content, where cation-cation [Cu-Cu] interaction is major at the octahedral B-sites and semiconductor behavior is associated with compounds having high Zn content, where cation-anion-cation [Fe-O-Fe] interaction is most predominant at B-sites in these spinel oxides. All studied compositions exhibit a transition with change in the slope of conductivity versus temperature curve. This transition temperature is found to decrease linearly with increasing Zn concentration x. The relation of the universal exponent s with temperature indicates the presence of two hopping conduction mechanisms; the correlated barrier hopping CBH at low Zn content x≤0.2 and small polaron (SP) at Zn content x≥0.3.     

Dielectric and AC ionic conductivity investigations in K3H(SeO4)2 single crystal

Optical observation under the polarizing microscope and DSC measurements on K₃H(SeO₄)₂ single crystal have been carried out in the temperature range 25-200 °C. It reveals a high-temperature structural phase transition at around 110 °C. The crystal system transformed from monoclinic to trigonal. Electrical impedance measurements of K₃H(SeO₄)₂ were performed as a function of both temperature and frequency. The electrical conduction and dielectric relaxation have been studied. The temperature dependence of electrical conductivity indicates that the sample crystal became a fast ionic conductor in the high-temperature phase. The frequency dependence of conductivity follows the Jonscher's universal dynamic law with the relation σ(ω)=σ(0)+Aωⁿ, where ω is the frequency of the AC field, and n is the exponent. The obtained n values decrease from 1.2 to 0.1 from the room temperature phase to fast ionic phase. The high ionic conductivity in the high-temperature phase is explained by the dynamical disordering of protons between the neighboring SeO₄ groups, which provide more vacant sites in the crystal.     

Spin-glass like behaviour in a concentrated chromium spinel: Zn0.5Cd0.5Cr2S4

Low field d.c. and a.c. susceptibility measurements are reported for the non magnetically diluted spinel Zn_0.5Cd_0.5Cr₂S₄. A spin-glass like behaviour is observed at low temperature (T_F = 15.4Katv = 198 Hz).This is the result of the presence of competing interactions (ferromagnetic between nearest-neighbours and antiferromagnetic between higher order neighbours) and of the disorder of their distribution due to the substitution between non-magnetic zinc and cadmium ions in the tetrahedral sites of the spinel lattice.     

Large enhancement of room temperature magnetoresistance in Ag-added La0.67(Ca0.65Ba0.35)0.33MnO3

The electrical and magnetoresistant properties of La_0.67(Ca_0.65Ba_0.35)_0.33MnO₃/Ag_x (abbreviated by LCBMO/Ag_x) have been studied. The results show that Ag addition causes a decrease of resistivity dramatically and especially induces a large enhancement of room temperature magnetoresistance (MR). The room temperature MR ratio for x=0.27 sample in 10 kOe magnetic field is 41%, almost 20 times larger than that for x=0 sample. This enhancement is related to that the Curie temperature (T_c) of the sample is near room temperature, as well as the significant reduction of resistivity. The good fits of experimental results for x=0.27 sample to Brillouin function indicate that the MR behavior in the Ag added LCBMO is induced by the spin-dependent hopping of the electrons between the spin clusters, which is an intrinsic property of the CMR materials.     

Spin-glass-like behaviour and magnetic order in Mn[Cr0.5Ga1.5]S4 spinels

Magnetization and susceptibility were investigated as a function of temperature and magnetic field in polycrystalline Mn[Cr_0.5Ga_1.5]S₄ spinel. The dc susceptibility measurements at 919 Oe showed a disordered ferrimagnetic behaviour with a Curie-Weiss temperature θ_CW=−55 K and an effective magnetic moment of 5.96 μ_B close to the spin-only value of 6.52 μ_B for Cr³⁺ and Mn²⁺ ions in the 3d³ and 3d⁵ configurations, respectively. The magnetization measured at 100 Oe revealed the multiple magnetic transitions with a sharp maximum at the Néel temperature T_N=3.9 K, a minimum at the Yafet-Kittel temperature T_YK=5 K, a broad maximum at the freezing temperature T_f=7.9 K, and an inflection point at the Curie temperature T_C=48 K indicating a transition to paramagnetic phase. A large splitting between the zero-field-cooled (ZFC) and field-cooled (FC) magnetizations at a temperature smaller than T_C suggests the presence of spin-glass-like behaviour. This behaviour is considered in a framework of competing interactions between the antiferromagnetic ordering of the A(Mn) sublattice and the ferromagnetic ordering of the B(Cr) sublattice.