Spin-glass behavior in the antiperovskite manganese nitride Mn3CuN codoped with Ge and Si

Antiperovskite manganese nitrides ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_x{\mathrm{Ge}}_{0.4?x}\right)N$ ($x=0.05$, 0.1, 0.15) were prepared and their negative thermal expansion, magnetic and specific heat properties were investigated. A frozen state with a freezing temperature was found at ～207 K in ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_{0.15}{\mathrm{Ge}}_{0.25}\right)N$. This indicates that ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_{0.15}{\mathrm{Ge}}_{0.25}\right)N$ exhibits a spin glass state at low temperatures. We discussed the cause of spin glass behavior and correlated this spin glass behavior with broadening of the negative thermal expansion operation-temperature window of the manganese nitrides ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_{0.15}{\mathrm{Ge}}_{0.25}\right)N$.     

Quantum point contact conductance in normal metal/insulator/ metal/dx2−y2+idxy mixed wave superconductor junctions

The tunneling conductance in a normal metal/insulator/metal/$d_{x^2?y^2}+i{d}_{xy}$ mixed wave superconductor (N/I/N/$d_{x^2?y^2}+i{d}_{xy}$) junction is calculated, where the N/I/N region is a quantum wire. It is found in the single-mode case that the magnitude of the tunneling conductance near zero voltage is enhanced due to the Andreev bound state by quasiparticles with perpendicular and horizontal injection, and the zero-bias conductance varies with $L$ ($L$ is the distance from insulating layer to the interface of N/$d_{x^2?y^2}+i{d}_{xy}$ mixed wave superconductor). Splitting of the zero-bias conductance peak appears in the quantum point contact tunneling spectra for an N/I/N/$d_{x^2?y^2}+i{d}_{xy}$ junction, and several subgap peaks can split at the same time. On increasing both $L$ and the magnitude ratio of the two components for the $d_{x^2?y^2}+i{d}_{xy}$ mixed wave, the subgap resonances exhibit an alternately high and low behavior inside the energy gap. These results are different from those in d-wave and p-wave superconductor junctions.     

Mn doping concentration dependent p–d hybridization in Ga1−xMnxN

The 3d electronic states of transition-metal Mn dopants in ${\mathrm{Ga}}_{1?x}{\mathrm{Mn}}_{x}N$ have been investigated by Mn $L$-edge X-ray absorption spectroscopy (XAS) measurements. Through the XAS analysis, the valence of the Mn ions is determined. With the increase of doping concentration, the integrated intensities of $L_{2,3}$ vary not monotonously, but increase first and then decrease. The relationship between the Mn doping concentration and the degree of p–d hybridization is discussed.