Efficient continuous-wave and Q-switched operation of a diode-pumped Yb:KLu(WO4)2 laser with self-Raman conversion

Efficient cw and passively Q-switched operation with self-stimulated Raman scattering conversion was demonstrated in a compact diode-pumped Yb:KLu(WO4)2 laser. A cw output power of 3.28 W was obtained with an optical efficiency of 48.2% and a slope efficiency of 78.2% with respect to the incident pump power. Stable Q-switched operation was achieved with a Cr4+:YAG saturable absorber, generating 32.4 microJ fundamental pulses with a duration of 1.41 ns at 1030.6 nm and 14.4 microJ Raman pulses with a duration of 0.71 ns at 1137.6 nm. At an incident pump power of 7.0 W, the average output power reached 0.9 and 0.4 W for fundamental and Raman radiation, with slope efficiencies of 32.1% and 14.1%, respectively.     

Efficient passively Q-switched Yb:LuAG microchip laser

An efficient passively Q-switched Yb:LuAG microchip laser with Cr4+:YAG as saturable absorber was demonstrated for the first time to our knowledge. Slope efficiencies of 40% and 28% were measured for the initial transmission of Cr4+:YAG, T(0)=95% and 90%, respectively. Laser pulses with a pulse energy of 19 microJ and a pulse width of 610 ps at the repetition rate of 12.8 kHz were achieved for T(0)=90%; the corresponding peak power of over 31 kW was obtained. The lasers oscillated at two or three longitudinal modes owing to the broad emission spectra of Yb:LuAG and mode selection by Cr4+:YAG thin plate acting as an intracavity etalon.     

Crystal growth, spectral and laser properties of Yb3+:NaGd(WO4)2 crystal

Yb³⁺-doped NaGd(WO₄)₂ (Yb:NGW) crystal has been successfully grown by Czochralski method. The rocking curves from (400) plane of as-grown Yb:NGW crystal was measured and the full-width values at half-maximum was 21″. The polarized absorption spectra, the fluorescence spectra and the fluorescence decay lifetime of Yb:NGW crystal were measured at room temperature. The spectroscopic parameters of Yb:NGW crystal are calculated and compared, with those of Yb:YAG crystal. A continuous wave output power of 3.01 W at 1048 nm was obtained with a slope efficiency of 71% by use of diode pumping.     

Efficient high-power laser operation of Yb:KLu(WO4)2 crystals cut along the principal optical axes

High-power continuous-wave laser operation was demonstrated with Yb:KLu(WO(4))(2) crystals cut along the N(p), N(m), and N(g) principal optical axes, achieving a nearly equal slope efficiency of 79%-80% in the absence of thermal effects. The N(g)-cut crystal proved to be the most advantageous for power scaling as well as efficient pumping. A maximum output power of 11.0 W was produced from a 2 mm thick uncoated N(g)-cut crystal in a approximately 7 mm long plano-concave resonator end pumped by a fiber-coupled diode; the corresponding optical-to-optical efficiency was 68%.     

新型激光晶体Yb:KY(WO4)2的结构与光谱

采用顶部籽晶提拉法,以K2W2O7为助溶剂,生长了Yb:KY(WO4)2新型激光晶体.经热重-差热分析,确定晶体熔点为1045℃,相变温度为1010℃.X射线粉末衍射测试,验证所生长的晶体为β-Yb:KY(WO4)2.晶体结构分析确定Yb:KY(WO4)2晶体由WO6八面体连接而成,WO6八面体是由双氧桥(WOOW)及单氧桥(WOW)构成.晶体粉末样品室温下的红外及拉曼光谱测试,确定WO6原子基团、双氧桥及单氧桥的振动频率.晶体的吸收峰位于940nm,980nm,发射峰位于989nm-1030nm.     

Mode-locked laser operation of epitaxially grown Yb:Klu(WO4)2 composites

Mode locking based on an epitaxial composite of the monoclinic double tungstate crystal Yb:KLu(WO4)2 is realized. A 100 microm thin Yb:KLu(WO4)2 layer grown on a KLu(WO4)2 substrate is used as an active medium in a laser passively mode locked by a semiconductor saturable absorber. Pulse durations of 114 fs have been achieved for an average power of 31 mW at 1030 nm. Results in the femtosecond and picosecond regimes of the Yb:KLu(WO4)2/KLu(WO4)2 laser are presented. The great potential of Yb-doped tungstate composite structures as active elements for mode-locked laser systems is demonstrated.     

Continuous-wave and passively Q-switched laser performance of a disordered Nd:GYSGG crystal

The performance of continuous wave (CW) and passively Q-switched Nd:GYSGG lasers was investigated for the first time. The CW output powers of 4.2 W with dual wavelength of 1058.4 nm and 1061.5 nm were obtained under the diode pump power of 17 W with slope efficiencies of 26%. By using Cr⁴⁺:YAG wafer as saturable absorber, Q-switching operation was performed and the short pulse with pulse width of 6.6 ns was obtained with the peak power of 9.97 kW.     

单斜结构的Yb:KLu(WO4)2晶体光谱和激光性质的各向异性

研究了Yb:KLu(WO4):晶体对非偏振抽运光的吸收以及连续波激光振荡性质.晶体结构的低对称性导致晶体光谱呈强烈各向异性,最强的吸收和发射都发生在平行于Nm.主轴的偏振方向上.Ng切向晶体具有最高的非偏振抽运光吸收效率和最大的激光功率产生潜力,2mm长的晶体产生的最高连续波输出功率为11 W,相对于吸收抽运功率,光一光转换效率为68%,而斜率效率则达80%.     

CW and Q-switched diode-pumped laser operation of Yb3+:NaLa(MoO4)2

Continuous wave (CW) and Q-switched diode-pumped laser operation of Yb³⁺:NaLa(MoO₄)₂ single crystal was to our knowledge, demonstrated for the first time. A CW output power of 220 mW and slope efficiency of 46% were obtained. Q-switched laser operation was achieved with a pulse duration of 60 ns average output power of 70 mW and slope efficiency of 22%. PACS 42.55.Xi; 42.60.Pk; 42.60.Gd.     

Growth and spectral properties of Tm3+-doped NaGd(WO4)2 crystal

Thulium doped sodium gadolinium tungstate crystals with sizes of about 20 mm×45 mm were grown successfully by the Czochralski technique along the (001) orientation. X-ray powder diffraction (XRD) of sodium gadolinium tungstate was described and the linear thermal expansion coefficients for the c- and a-axes were measured as 1.60×10^-5 and 7.89×10^-6 °C^-1. Polarized absorption spectra, and fluorescence spectra, as well as fluorescence decay curves of Tm³⁺-doped NaGd(WO₄)₂, have been recorded at room temperature and used to calculate the absorption and stimulated emission cross-sections. Based on the Judd–Ofelt theory, three intensity parameters were obtained. The luminescent quantum efficiency of the ³ H ₄ level was determined to be approximately 65% for this material. The emission cross-section of the ³ F ₄→³ H ₆ IR transition at about 1.8 μm was estimated by the reciprocity method. PACS 78.55.Hx; 65.40.De; 78.20.-e     

Continuous wave and tunable laser operation of Yb3+ in disordered NaLa(MoO4)2

Continuous-wave Yb³⁺ laser operation is studied in single crystals of disordered NaLa(MoO₄)₂ at room temperature. The sample used was grown by the Czochralski technique and incorporates an Yb ion density of 3.1×10²⁰ cm^-3. The effect of the Yb concentration on some of the crystal properties is described as well as the spectroscopic Yb³⁺ properties at 5 K. Maximum slope efficiencies of about 40% for π and 38% for σ polarization were obtained under Ti:sapphire laser pumping near 976 nm, respectively. The maximum output power for the π polarization was 400 mW at 1039.5 nm, the threshold in this case amounted to 240 mW (absorbed pump power). The laser emission was tunable between 1016 and 1064 nm with a Lyot filter. Lasing was also realized by pumping with a fiber-coupled diode laser module. Maximum output power of 900 mW at 1035 nm was achieved in this case for the π polarization and the threshold was 280 mW. The results, in terms of output power and tunability, are superior in comparison to all previous reports on Yb-doped disordered double tungstate or molybdate crystals and represent a significant improvement in comparison to earlier experiments with low-doped Yb:NaLa(MoO₄)₂.PACS 42.55.Rz; 42.55.Xi; 42.70.Hj     

Optical properties and laser performance of neodymium doped scheelites CaWO4 and NaGd(WO4)2

Nd-doped CaWO₄ (CWO) and NaGd(WO₄)₂ (NGWO) single crystals with good optical quality have been grown by the Czochralski technique. The neodymium distribution coefficient in these matrices is about 0.4 for CWO and close to unity for NGWO. Polarized absorption and emission spectra have been recorded at room temperature and used to calculate the absorption and stimulated emission cross-sections.1 and 2% Nd : CWO and 1 % Nd:NGWO laser rods have been tested in a cavity longitudinaly pumped by an 1 W AIGaAs laser diode and compared to Nd : YAG and Nd:YVO₄ rods in the same conditions. The 2% Nd: CWO rod exhibits the best performance with slope efficiencies of 64%, higher than in the case of YAG and equal to the YVO₄ samples. The dependence of the laser output power versus the diode temperature has been measured for all these materials. The laser output of Nd: CWO was found to be nearly as stable as for Nd : YVO₄ and much more stable than in the case of Nd : YAG. A CWO microchip has also been tested for the first time to our knowledge.     

Efficient subnanosecond diode-pumped passively Q-switched Nd:YVO4 self-stimulated Raman laser

Generation of efficient subnanosecond self-stimulated Raman pulses by a diode-pumped passively Q-switched Nd:YVO4/Cr4+:YAG laser is demonstrated. Experimental results reveal that self-frequency Raman conversion can be achieved with a c-cut Nd:YVO4 crystal in a nearly hemispherical cavity. At 2.0 W of incident pump power, the self-stimulated Raman laser produces stable 710-ps pulses at a Stokes wavelength of 1178.6 nm with 7.2 microJ of pulse energy at a 17-kHz repetition rate.     

Laser operation of the new stoichiometric crystal KYb(WO4)2

We demonstrate for the first time laser operation with the monoclinic stoichiometric crystal KYb(WO₄)₂ (hereafter KYbW). Lasing on the ² F _5/2 ?² F _7/2 transition of Yb³⁺ at room temperature has been achieved near 1074 nm with >41% slope efficiency (>26% maximum conversion efficiency) using a 0.5-mm-thick plate of KYbW. This new laser material holds great promise for diode-pumped high-power lasers, thin-disk and waveguide designs as well as for ultrashort (ps/fs) pulse laser systems. Received: 10 October 2001 / Revised version: 19 November 2001 / Published online: 17 January 2002     

Diode-pumped Kerr-lens mode-locked Yb:KY(WO(4))(2) laser

A self-starting Kerr-lens mode-locked Yb:KY(WO(4))(2) laser directly end pumped by two 1.6-W diodes is demonstrated for what is to our knowledge the first time. Pulses as short as 71 fs with 120-mW average output power, at a center wavelength of 1057 nm, were obtained at a repetition rate of 110 MHz. A 10-nm tuning range was achieved with longer pulses and higher average output power.     

Yb3+掺杂KY(WO4)2激光晶体生长、结构与光谱分析

采用顶部籽晶提拉法(TSSG)生长出Yb:KY(WO4)2(Yb:KYW)激光晶体.对预烧后的原料及晶体进行了XRD分析,结果表明,分别在920℃和600℃预烧8h后的熔质和助熔剂基本上形成一相,抑止了实验中的挥发问题;所生长的晶体为β-Yb:KYW,计算其晶格常数为a=1.063nm,b=1.034nm,c=0.755nm,β=130.75°.测得不同厚度样品的吸收光谱,结果表明样品在933nm和981nm有较强的吸收峰,计算出主峰981nm的吸收截面σabs=5.34×10-20cm2.测得样品的荧光光谱,计算出主峰1030nm受激发射截面σem=3.1×10-20cm2,并估算其荧光寿命为0.56ms,与实测值0.60ms吻合.计算出激发态最小粒子数(β)、饱和抽运强度(Isat)和最小抽运强度(Imin),通过与其他掺Yb3+晶体比较,结果表明Yb:KYW晶体的Imin(0.24kW/cm2)很小.     

High-efficiency multicolour Q-switched Nd3+:KGd(WO4)2 laser

Energy output of 400 mJ, an order of magnitude higher than reported previously is obtained in aQ-switched flashlamp-pumped Nd³⁺:KGd(WO₄)₂ laser. No pronounced saturation of the output energy with respect to the pump energy is observed. Multiwavelength operation due to efficient Stokes conversion in the laser crystal is demonstrated.     

Efficient femtosecond green-light source with a diode-pumped mode-locked Yb3+:KY(WO4)2 laser

Efficient generation of femtosecond pulses at 524 nm is demonstrated by the extracavity frequency doubling of the output of a diode-pumped femtosecond Yb3+:KY(WO4)2 laser using a periodically poled LiTaO3 crystal. An average second-harmonic power of 120 mW is produced at an internal conversion efficiency of 40%. The temporal characteristics of the frequency-doubled pulses as a function of focusing conditions in a thick nonlinear crystal are investigated experimentally, and pulses as short as 225 fs are generated at a pulse repetition frequency of 86 MHz.     

Highly efficient quantum cutting in Yb/Pr-codoped NaY(WO4)2 crystal

Cutting one ultraviolet photon into three near-infrared (NIR) photons can effectively improve the efficiency of silicon solar cells. We prepared Yb-doped, Pr-doped, and Yb/Pr-codoped NaY(WO₄)₂ (NYW) crystals. The Yb/Pr-codoped sample can divide the ultraviolet and blue photons into ∼1000 nm NIR photons, which brings strong emission at the NIR wavelength range. On the basis of the luminescence spectra and lifetime analysis, the quantum efficiency of the material is higher.     

Sub-nanosecond passively Q-switched Yb:YAG/Cr4+:YAG sandwiched microchip laser

We report on laser-diode pumped low-threshold, and compact passively Q-switched Yb:YAG microchip lasers, with Cr⁴⁺:YAG crystals as the saturable absorbers. The laser threshold at the fundamental wavelength of 1.03 μm is as low as 0.25 W, and the slope efficiency is as high as 36.8%, and the optical-to-optical efficiency is as high as 27% for the 95% initial transmission of the Cr⁴⁺:YAG crystal. A pulse width of 1.35 ns and peak power of over 8.2 kW was obtained. Using a 5 mm thick KTP crystal as the second-harmonic generation medium, 514.7 nm green light of 155 mW power was generated. The pulse duration of 480 ps was generated at 1.03 μm by using 85% of the initial transmission of the Cr⁴⁺:YAG saturable absorber. Stable single-longitudinal-mode oscillation and wide-separated multi-longitudinal-mode oscillation due to the etalon effect of the Cr⁴⁺:YAG thin plate was achieved at different pump power levels. PACS 42.55.Sa; 42.55.Xi; 42.60.Gd