B2Cn+(n=1～9)团簇的结构及其稳定性

采用密度泛函理论(DFT)的B3LYP泛函, 在6-311G*水平上对B2Cn+(n=1～9)团簇的几何构型和电子结构进行了优化和振动频率计算. 结果表明, 在B2Cn+(n=1～9)团簇的基态构型中, B2C2+、B2C3+为具有D∞h对称性的线形结构, B2C7+为具有Cs对称性的立体环状结构, 其余均为平面构型; 其成键顺序为C—C成键优于B—C 成键, B—C成键优于B—B成键. 进一步得到了B2Cn+(n=1～9)团簇的总能量(ET)、零点能(EZ)、摩尔热容(Cp)、标准熵(S0)以及原子化能(ΔEn+). 其结果显示, 随着n的递增, ET、EZ、Cp、S0和ΔEn+数值均呈现增大趋势, 其中EZ数值呈现近似等梯度的增加趋势. 通过对B2Cn+(n=1～9)团簇基态结构的垂直电子亲合势的研究发现, n为奇数的B2Cn+团簇比n为偶数的稳定.     

BH4中性分子和离子结构的量子拓扑研究

采用密度泛函方法B3LYP和耦合簇方法CCSD分别在6-311+G(d,p)水平上对BH4+、BH4和BH4−的构型进行全优化, 并从量子拓扑学的角度对各稳定构型进行电子密度拓扑分析. 研究表明, BH4+、BH4和BH4−分别具有C2v、C2v和Td对称性. BH4+和BH4中都存在B—H键、H—H键和原子-分子键；而BH4−中存在着四个相同的B—H键；BH4中含有未成对电子, 其主要围绕B原子运动.     

CnBδ(δ=0, ±1; n =1～6)团簇的结构、稳定性和光谱

采用密度泛函理论(DFT)的B3LYP方法,在6-31G*和6-311＋G(3df)水平上对C_nB(n=1～6)团簇及其阴离子和阳离子的几何构型和电子结构进行了优化和振动频率计算.得到了C_nB(n=1～6)团簇的电离能,绝热电子亲合势以及C_nB^δ(δ=0,±1)团簇的能隙.结果表明C_nB^－(n=1～6)团簇的基态构型均为线形,这与等电子的C_n簇合物的结构是一致的; C_nB(n=1～6)团簇的基态构型中,除C₂B为不对称的三角形,C₆B为具有C_2v对称性的环状结构外,其余均为线形结构.阳离子团簇中n=2、3、6的基态结构具有C_2v对称性外,其它几个均为线形结构.从几何参数和振动频率上发现,采用密度泛函B3LYP方法在6-311＋G(3df)和6-31G*两种基组上计算得到的键长参数和振动频率非常接近,说明B3LYP方法在计算C_nB簇合物结构参数上对于基组的选择是不太敏感的.通过对C_nB(n=1～6)的光电子能谱性质的研究发现,C₄B容易获得一个电子形成阴离子团簇,但失去一个电子是很困难的,这与实验上观测到的结果非常吻合.     

Pb_mTe_n(m+n≤6)团簇的结构与稳定性(英文)

采用密度泛函理论(DFT)的B3LYP方法,在SDD基组水平上对PbmTen(m+n≤6)团簇的几何结构、平均原子键能、离解能及HOMO-LUMO能隙进行了计算分析.结果表明:纯Pb团簇比纯Te团簇稳定,PbnTe比PbTen(n=2-5)稳定,PbnTe2比Pb2Ten(n=3-4)更加稳定;混合团簇PbmTen的HOMO-LUMO能隙在1.87-3.55eV之间,表明该团簇具有半导体性质;在所有团簇中,PbTe团簇最稳定.     

钒、铬团簇的电子亲合能、硬度与原子数的关系

根据静电球形液滴模型理论和离子极化、屏蔽效应对团簇的影响, 推导适合钒、铬团簇电子亲合能、硬度与原子数关系符合的普遍公式: Y=ae2/R+b/R2+c, R=rsN1/3, 从而更方便地预测大尺寸团簇的性质参数, 并发现和分析结构和性质异常的小团簇, 如Vn(n=5, 7, 9, 13)和Crn(n=6, 10, 17)的性质.     

Cux (x=1-4)团簇在CeO2(111)表面的吸附

用基于密度泛函理论的第一性原理方法研究了Cu团簇(Cu_x, x=1-4)在CeO₂(111)表面的吸附. 研究发现当团簇比较小时(x=2, 3), 倾向于平铺表面; 当x=4时, Cu团簇在CeO₂(111)表面以三维的四面体结构吸附较为稳定, 从Cu 3d到Ce 4f的电荷转移使Cu团簇带正电荷. 由二维的菱形结构到三维的四面体结构的转变势垒为1.05 eV, 并且其中一个Cu原子直接迁移到另外三个Cu原子的空位顶部的转变路径比较有利. 在Cu团簇与CeO₂的相互作用过程中, Cu-O和Cu-Cu相互作用的竞争最终决定了Cu团簇在CeO₂上的形貌. 这种CeO₂(111)负载的带正电的三维Cu团簇将对水分解, 进而对水煤气反应具有高的催化活性.     

(Mg3N2)n(n=1～4)团簇结构与性质的密度泛函研究

用密度泛函理论(DFT)的杂化密度泛函B3LYP方法在6-31G*基组水平上对(Mg3N2)n(n=1～4)团簇各种可能的构型进行几何结构优化,预测了各团簇的最稳定结构.并对最稳定结构的振动特性、成键特性、电荷特性和稳定性等进行了理论分析.结果表明:(Mg3N2)n=1～4团簇易形成笼状结构,其最稳定构型中N原子配位数以3、4较多见;团簇主要由Mg-N键组成,Mg-N键长为0.194～0.218nm,Mg-Mg 键长为0.262～0.298 nm;N原子的平均自然电荷为-2.06 e,Mg原子的平均自然电荷为 1.37 e;(Mg3N2)2团簇有相对较高的动力学稳定性.     

配合物[Fe(CO)x(Ph2Ppy)y(HgCl2)z](x=3, 4; y=1, 2; z=0, 1, 2)的Fe-Hg相互作用及31P化学位移的理论研究

用密度泛函理论PBE0法计算配合物[Fe(CO)x(Ph2Ppy)y(HgCl2)z](1: x=4, y=1, z=0; 2: x=3, y=2, z=0; 3: x=4, y=1, z=1; 4: x=3, y=2, z=1; 5: x=4, y=1, z=2; 6: x=3, y=2, z=2)的几何构型, 用PBE0-GIAO法计算配合物1~6的31P化学位移. 计算结果表明, 含2个Ph2Ppy的配合物5和6的Fe—Hg相互作用略大于含单个Ph2Ppy的配合物3和4. 含2个HgCl2的配合物4和6存在Fe—Hg σ键, 比含单个HgCl2的配合物3和5的Fe—Hg相互作用强, 配合物3和5的Fe—Hg相互作用以Fe→Hg和Fe←Hg离域为主. 配合物3中Fe的负电荷比5的小, 故配合物5的Fe—Hg相互作用比配合物3的强且Fe→Hg离域比较显著, 而配合物3的Fe←Hg离域更显著. Fe—Hg相互作用增大了双核配合物中P核周围的电子密度, 其31P化学位移比相应的单核配合物小, 且含2个HgCl2的双核配合物的31P化学位移更小. 含单个Ph2Ppy的配合物的31P化学位移小于含2个Ph2Ppy的配合物.     

AlmN(m=2～9)团簇结构与稳定性的DFT研究

用密度泛涵理论 (DFT)的 B3LYP方法在 6-31G水平上对 AlmN(m=2～ 9)团簇的几何构型、电子结构、振动频率等性质进行了理论研究.给出了以 Alm团簇作为设计 AlmN类结构的母体,考虑在不同位置上结合 N原子的结构,可以较快找到 AlmN类团簇基态结构的一种方法.通过对基态结构的几何参数分析发现, m< 4的结构只存在 Al- N键; m≥ 4的结构 , Al- N键和 Al- Al键共存.对基态结构的绝热电离能讨论结果表明,只存在 Al- N键的 Al2N和 Al3N团簇较稳定.     

第一原理对AIPm和AIPm^-（m=2～9）团簇结构与稳定性的研究

用密度泛函理论(DFF)的B3LYP方法，在6-311G^ 水平上对AIPm和AIPm^-(m=2～9)团簇的几何构型，电子结构和振动频率等性质进行了理论研究，给出了一种以P朋团簇作为设计AIPm类结构的母体，考虑在不同位置上结合Al原子的结构，可以较快找到AIPm类团簇基态结构的方法．通过对基态结构的第一离解能和能量二次差分讨论，得到m为奇数的AIPm团簇比m为偶数的稳定，对基态结构的HOMO-LUMO能隙和绝热电子亲合势的讨论表明，AIP3^-，AIP5和AIP7团簇结构较稳定。     

Theoretical study of structure and photoelectron spectroscopy of In(x)P(y)- and In(x)P(y) (x + y < or = 6) clusters

The geometries and vibrational frequencies of In(x)P(y)- and In(x)P(y) are investigated by hybrid B3LYP functional for x + y < or = 6 and CCSD(T) method for x + y < or = 3. As for the small clusters having two to three atoms, the geometrical and electronic structures and vibrational frequencies at the B3LYP level are in good agreement with those at the CCSD(T) level. Among the most stable structures of In(x)P(y)- and In(x)P(y) (x + y < or = 6) clusters the P-rich clusters are more stable than In-rich clusters. Moreover, we found that those P atoms in In(x)P(y)- and In(x)P(y) (x + y < or = 6) clusters prefer to form a P-P bond, triangle, quadrangle, and pentagon for y = 2, 3, 4, and 5, respectively. Also, the vertical detachment energies of In(x)P(y)- (x + y < or = 6) and electron affinities of In(x)P(y) (x + y < or = 6) clusters obtained by B3LYP are in good agreement with the experimental values available. Theoretically, we show that the electron affinity of In3P3 is very low because, as observed in the experiment, there is a formation of a new P-P bond after an electron is lost from In(3)P(3)-, and we find that the similar phenomena exhibit in In2P4(-) cluster as well.     

A Density Functional Study on the Geometries of Compounds Fe(HCN)n+(n = 1～6)

The possible geometries of Fe(HCN)n+ (n = 1～6) compounds were studied by using DFT/UB3LYP/6-31G(2df) method. The structure and ground state of each fragmental ion are C∞v (4∑+ or 6∑+), D∞h(4∑g+), D3h (4A1'), C2v or Td or C3v (4A1), and D3h (4A1') or C4v( (2A1') sequentially with n = 1～5. For the compound Fe(HCN)6+, the possible geometry was not obtained. The sequential incremental interaction energy (-△(△E)), dissociation energy (△D0), enthalpy (-△(△H)) and Gibbs free energy (-△(△G)), and frequencies for HCN-Fe(HCN)n-1+ were also calculated, and the results are all in good agreement with the experiments. The bond length of Fe-N is lengthened with the increase of cluster size, and the strength of Fe+-N coordination bond varies nonmon- tonically as increasing the number of ligands. The Fe+-N bond of Fe(HCN)2+ is the strongest in all compounds.     

Solvation of copper ions by acetone. structures and sequential binding energies of Cu+(acetone)x,x = 1-4 from collision-induced dissociation and theoretical studies

Collision-induced dissociation of Cu+(acetone)(x), x = 1-4, with Xe is studied as a function of kinetic energy using guided ion beam mass spectrometry. In all cases, the primary and lowest energy dissociation channel observed is endothermic loss of one acetone molecule. The primary cross section thresholds are interpreted to yield 0 and 298 K bond energies after accounting for the effects of multiple ion-neutral collisions, internal energy of the complexes, and dissociation lifetimes. Density functional calculations at the B3LYP/6-31G* level of theory are used to determine the structures of these complexes and provide molecular constants necessary for the thermodynamic analysis of the experimental data. Theoretical bond dissociation energies are determined from single point calculations at the B3LYP/6-311+G(2d,2p) and MP2(full)/6-311+G(2d,2p) levels, using the B3LYP/6-31G* optimized geometries. The experimental bond energies determined here are in good agreement with previous experimental measurements made in a high-pressure mass spectrometer for the sum of the first and second bond energy (i.e., Cu+(acetone)2 --> Cu+ + 2 acetone) when these results are properly anchored. The agreement between theory and experiment is reasonable in all cases, but varies both with the size of the cluster and the level of theory employed. B3LYP does an excellent job for the x = 1 and 3 clusters, but is systematically low for the x = 2 and 4 clusters such that the overall trends in sequential binding energies are not parallel. In contrast, all MP2 values are somewhat low, but the overall trends parallel the measured values for all clusters. The trends in the measured Cu+(acetone), binding energies are explained in terms of 4s-3d sigma hybridization effects and ligand-ligand repulsion in the clusters.     

Theoretical study of the structural and electronic properties of SimGen and SimGen- (s = m + n <or= 7) clusters

Ground-state structures, vibrational frequencies, HOMO-LUMO energy gap, electron affinities, and cluster mixing energy of binary semiconductor clusters SimGen in the range s = m + n 相似文献   

Structural, energetic, electronic, bonding, and vibrational properties of Ga3O, Ga3O2, Ga3O3, Ga2O3, and GaO3 clusters

The results of density functional theory based calculations on Ga3O, Ga3O2, Ga3O3, Ga2O3, and GaO3 clusters are reported here. A preference for planar arrangement of the constituent atoms maximizing the ionic interactions is found in the ground state of the clusters considered. The sequential oxidation of the metal-excess clusters increases the binding energy, but the sequential removal of a metal atom from the oxygen-excess clusters decreases the binding energy. The increase in the oxygen to metal ratio in these clusters is accompanied by increase in both electron affinity and ionization potential. The ionization induced structural distortions in the neutral clusters are relatively small, except those for Ga3O2. In anionic (cationic) clusters, the added (ionized) electron is shared by the Ga atoms, except in the case of GaO3. The vibrational frequencies and charge density analysis reveal the importance of the ionic Ga-O bond in stabilizing the gallium oxide clusters considered in this study.     

A Gaussian-3 theoretical study of small silicon-lithium clusters: electronic structures and electron affinities of SinLi(-) (n = 2-8)

The molecular structures of neutral Si n Li ( n = 2-8) species and their anions have been studied by means of the higher level of the Gaussian-3 (G3) techniques. The lowest energy structures of these clusters have been reported. The ground-state structures of neutral clusters are "attaching structures", in which the Li atom is bound to Si n clusters. The ground-state geometries of anions, however, are "substitutional structures", which is derived from Si n+1 by replacing a Si atom with a Li (-). The electron affinities of Si n Li and Si n have been presented. The theoretical electron affinities of Si n are in good agreement with the experiment data. The reliable electron affinities of Si n Li are predicted to be 1.87 eV for Si 2Li, 2.06 eV for Si 3Li, 2.01 eV for Si 4Li, 2.61 eV for Si 5Li, 2.36 eV for Si 6Li, 2.21 eV for Si 7Li, and 3.18 eV for Si 8Li. The dissociation energies of Li atom from the lowest energy structures of Si n Li and Si atom from Si n clusters have also been estimated respectively to examine relative stabilities.     

A G3 study of the structure of carbon-nitrogen nanoclusters

Possible structures of the carbon-nitrogen clusters of the form C(m)N(n) (m = 1-4, n = 1-4, m + n = 2-5) were predicted for the neutral, anion, and cation species in the singlet, doublet, and triplet states, whenever appropriate. The calculations were performed at the G3, MP2(fc)/6-311+G*, and B3LYP/6-311+G* levels of theory. Several molecular properties related to the experimental data--such as the electronic energy, equilibrium geometry, binding energy, HOMO-LUMO gap (HLG), and spin contamination --were calculated. In addition the vertical electron attachment, the adiabatic electron affinity, and vertical ionization energy, of the neutral clusters were calculated. Most of the predicted lowest energy structures were linear, whereas bent structures became more stable with the increase of the cluster size and increase of the number of the N atoms. In most of the predicted lowest energy structures, the N atom prefers the terminal position with acetylenic bond. The calculated BE of the predicted clusters increases with the increase of the cluster size for the neutral and cation clusters but decreases with the increase of the cluster size for the anion clusters. The predicted clusters are characterized by high HLG of about 11 eV on the average, with that of the anion clusters is smaller than that for the neutral and cation clusters. It is concluded then that the anion clusters are less stable than the corresponding neutral and cation clusters. Finally, the N(2) loss reaction is treated.     

Electron affinities of Al(n) clusters and multiple-fold aromaticity of the square Al4(2-) structure

The concept of aromaticity was first invented to account for the unusual stability of planar organic molecules with 4n + 2 delocalized pi electrons. Recent photoelectron spectroscopy experiments on all-metal MAl(4)(-) systems with an approximate square planar Al(4)(2-) unit and an alkali metal led to the suggestion that Al(4)(2-) is aromatic. The square Al(4)(2-) structure was recognized as the prototype of a new family of aromatic molecules. High-level ab initio calculations based on extrapolating CCSD(T)/aug-cc-pVxZ (x = D, T, and Q) to the complete basis set limit were used to calculate the first electron affinities of Al(n)(), n = 0-4. The calculated electron affinities, 0.41 eV (n = 0), 1.51 eV (n = 1), 1.89 eV (n = 3), and 2.18 eV (n = 4), are all in excellent agreement with available experimental data. On the basis of the high-level ab initio quantum chemical calculations, we can estimate the resonance energy and show that it is quite large, large enough to stabilize Al(4)(2-) with respect to Al(4). Analysis of the calculated results shows that the aromaticity of Al(4)(2-) is unusual and different from that of C(6)H(6). Particularly, compared to the usual (1-fold) pi aromaticity in C(6)H(6), which may be represented by two Kekulé structures sharing a common sigma bond framework, the square Al(4)(2-) structure has an unusual "multiple-fold" aromaticity determined by three independent delocalized (pi and sigma) bonding systems, each of which satisfies the 4n + 2 electron counting rule, leading to a total of 4 x 4 x 4 = 64 potential resonating Kekulé-like structures without a common sigma frame. We also discuss the 2-fold aromaticity (pi plus sigma) of the Al(3)(-) anion, which can be represented by 3 x 3 = 9 potential resonating Kekulé-like structures, each with two localized chemical bonds. These results lead us to suggest a general approach (applicable to both organic and inorganic molecules) for examining delocalized chemical bonding. The possible electronic contribution to the aromaticity of a molecule should not be limited to only one particular delocalized bonding system satisfying a certain electron counting rule of aromaticity. More than one independent delocalized bonding system can simultaneously satisfy the electron counting rule of aromaticity, and therefore, a molecular structure could have multiple-fold aromaticity.     

Electronic charging of non-metallic clusters: size-selected Mo(x)S(y) clusters supported on an ultrathin alumina film on NiAl(110)

Two photon photoemission was used to investigate the interfacial charge transfer for size-selected Mo(x)S(y) (x/y: 2/6, 4/6, 6/8, 7/10) clusters deposited on an ultrathin alumina film prepared on a NiAl(110) surface. The local work function of the surface increases with increasing cluster coverage, which is unexpected for charge transfer resulting from the formation of Mo-O bonds between the clusters and the alumina surface. By analogy with Au atoms and clusters on metal-supported ultrathin oxide films, we invoke electron tunneling from the NiAl substrate to explain the charge transfer to the Mo(x)S(y) clusters. Electron tunneling is favored by the large electron affinities of the Mo(x)S(y) clusters and the relatively low work function induced by the presence of the alumina film. The interfacial dipole moments derived from coverage-dependent measurements are cluster dependent and reflect differences in Mo(x)S(y) cluster structure and surface bonding. These results extend previous observations of electronic charging to non-metallic clusters, specifically, metal sulfides, and suggest a novel way to modify the electronic structure and reactivity of nanocatalysts for heterogeneous chemistry.     

Effect of Ga2O3 on the spectroscopic properties of erbium-doped boro-bismuth glasses

The spectroscopic properties and thermal stability of Er3+-doped Bi2O3-B2O3-Ga2O3 glasses are investigated experimentally. The effect of Ga2O3 content on absorption spectra, the Judd-Ofelt parameters Omega t (t=2, 4, 6), fluorescence spectra and the lifetimes of Er3+:4I 13/2 level are also investigated, and the stimulated emission cross-section is calculated from McCumber theory. With the increasing of Ga2O3 content in the glass composition, the Omega t (t=2, 4, 6) parameters, fluorescence full width at half maximum (FWHM) and the 4I 13/2 lifetimes of Er3+ first increase, reach its maximum at Ga2O3=8 mol.%, and then decrease. The results show that Er3+-doped 50Bi2O3-42B2O3-8Ga2O3 glass has the broadest FWHM (81nm) and large stimulated emission cross-section (1.03 x1 0(-20)cm2) in these glass samples. Compared with other glass hosts, the gain bandwidth properties of Er+3-doped Bi2O3-B2O3-Ga2O3 glass is better than tellurite, silicate, phosphate and germante glasses. In addition, the lifetime of 4I 13/2 level of Er(3+) in bismuth-based glass, compared with those in other glasses, is relative low due to the high-phonon energy of the B-O bond, the large refractive index of the host and the existence of OH* in the glass. At the same time, the glass thermal stability is improved in which the substitution of Ga2O3 for B2O3 strengthens the network structure. The suitability of bismuth-based glass as a host for a Er3+-doped broadband amplifier and its advantages over other glass hosts are also discussed.