An example of chemistry-morphology interaction: making up for the geometric and energetic heterogeneities of the (1 0 0) surface of single crystalline silicon by high-temperature treatments in H2

A lot of work has been carried out to prepare chemically homogeneous (1 0 0) silicon surfaces. The hydrogen-terminated (1 0 0) silicon surfaces are the most promising ones, especially in view of their remarkable environmental stability. The simplest way to produce hydrogen-terminated surfaces (attack in water solution of HF of a sacrificial, thermally grown, oxide) results in strongly heterogeneous rough surfaces (although with prevailing dihydride terminations). These surfaces can, however, be flattened and homogenized by treating them in H₂ at high temperature (>850 C). The morphological and chemical changes undergone by the surface during the treatment are studied X-ray photoelectron spectroscopy, atomic force microscopy, scanning tunnelling microscopy, infrared absorption spectroscopy in the attenuated total reflection mode, reflection high energy electron diffraction and thermal programmed desorption, and the mechanisms responsible for them are discussed.     

Pt-induced structures on Si(1 1 0) studied by STM

The structures induced by platinum (Pt) adsorption on Si(1 1 0) surface have been studied by scanning tunneling microscopy (STM) for coverage up to 2 monolayers (ML). Three surface phases have been found to form: “5×4”, “13×2” and “6×5” for Pt coverages 0.3, 0.5 and 1 ML respectively. All structures are formed by one-dimensional rows aligned along the direction. At the coverage >1 ML islands of, probably, Pt silicide start to form in form of 1D nanowires.     

Preparation and characterisation of Au(1 1 0) and Cu(1 1 0) surfaces for applications in ambient environments

The preparation of metal surfaces that in ambient conditions are flat and smooth over micron length scales is desirable for a wide range of applications. Scanning probe microscopy (SPM) studies of biomolecular adsorption and cell attachment require such well-prepared substrates. Standard polishing finishes are often found to exhibit considerable roughness and damage including scratches when investigated by SPM. We have prepared by means of UHV technology Au(1 1 0) and Cu(1 1 0) surfaces that when in ambient air exhibit a more homogeneous morphology and are considerably smoother than conventional polished surfaces. SPM techniques and the optical technique of reflection anisotropy spectroscopy (RAS) are used to characterise the morphological and electronic properties of these surfaces, respectively. The RA response of both Au(1 1 0) and Cu(1 1 0) surfaces in ambient conditions can be interpreted in terms of optical transitions between surface-modified bulk bands.     

Atomistic simulation of Pt trimer on Pt(1 1 1) surface

The diffusion of Platinum trimer on Pt(1 1 1) is studied at different temperatures by molecular dynamics (MD) simulation. The structure stability is studied by cluster binding energy. The interaction between adatoms and surface atoms is discussed based on the calculated phonon density of state of Pt trimer. The diffusion coefficients of Pt trimer are derived from mean square displacement of cluster’s mass-center, which is obtained by long simulation times (?0.2 s) and tracing of interstitial atoms on surface. Then the diffusion prefactor and migration energy are deduced from Arrhenius relation. The calculated results are in reasonable agreement with experiment. In addition, using the diffusion prefactor and migration energy, the efficiency of Pt trimer as a critical nucleus for three-dimensional growth of thin films is discussed.     

A theoretical study of c-C5H8 adsorption on Ge (0 0 1)-2 × 1 and on dimer vacancies on the surface: Electronic structure and bonding

In this work we analyzed the geometry and the chemical interactions for c-C₅H₈ adsorption on Ge (0 0 1), using density functional theory calculations (DFT). We examined the changes in the atomic interactions using a slab model. We considered two cases, the cyclopentene adsorption on Ge(0 0 1) and on dimer vacancies on the surface. We found an average distance H-Ge, -C-Ge and C-Ge of 1.50, 1.70 and 1.65 Å, respectively, on dimer vacancies; and an average C-Ge distance of 2.05 Å on Ge-Ge dimer. We also computed the density of states (DOS) and the DOS weighted overlap populations (OPDOS) corresponding to C-C, C-Ge, C-H, and Ge-Ge bonds. During adsorption the main contribution are the CC double bond in both cases, and the next C and the H's belonging to this bonds in the case of adsorption on dimer vacancies. The orbital contribution includes participation of the 2p_y and 2p_z orbitals corresponding to unsaturated C atoms, 2p_z corresponding to side saturated C, and the 4p orbitals of Ge for the adsorption on dimer vacancies; 2s and 2p_z orbitals corresponding to double bond C atoms, 4s and 4p_z orbitals of Ge for the adsorption on Ge(0 0 1).     

Adsorption of 2-butyne on Si(0 0 1) at room temperature: A valence band photoemission study

We present an angle resolved ultraviolet photoemission spectroscopy study of the adsorption of 2-butyne (CH₃-CC-CH₃) on Si(0 0 1)-2 × 1 at room temperature. We recorded valence band photoemission spectra for two azimuthal positions of a vicinal silicon surface, where all the rows formed by the surface silicon dimers are parallel. The photoemission symmetry selection rules allow the determination of the orientation of the molecular orbitals. The photoemission signal of the HOMO is enhanced when the electric field is parallel to the dimer rows. This showed that the π orbital left intact after the cyclo-addition reaction of the molecule with one silicon dimer is parallel to the dimer rows. This indicates that each 2-butyne molecule adsorbs on one silicon dimer. In spite of the size of the system and the vicinity of the orbitals, the angle resolved study points out that no dispersion of the electronic bands occurs. Not all the surface dimers are reacted so some disorder still exists on the surface preventing the formation of Bloch states.     

Atomic and electronic structure of Sr/Si(0 0 1)-(2 × 2)

The adsorption of Sr on the Si(0 0 1) surface with the semiantiphase dimer (2 × 2) reconstruction is studied, based upon the ab initio pseudopotential calculations. It is calculated that the semiantiphase dimer (2 × 2) reconstruction (2 dimers per unit cell) is more favorable than the (2 × 1) phase (1 dimer per unit cell) by an energy of about 0.24 eV/dimer. Considering the energetically more stable reconstruction, we have assumed four possible locations for 1/4 monolayer (ML) Sr adsorption on this surface: (i) bridge, (ii) cave, (iii) pedestal, and (iv) valley-bridge. We find that Sr adsorption on the valley-bridge site is energetically more favorable than all other cases studied here. Interestingly, one of the dimers becomes symmetric, but the other one is still asymmetric with the buckling angle reduced from 18° to 14°, when compared with the clean Si(0 0 1)-(2 × 2) surface. The calculated bond length between Sr and Si in the case of valley-bridge adsorption site is 3.05 Å, and in good agreement with other theoretical calculations. We also present and compare the electronic band structures for the clean and covered surfaces as well as the corresponding charge density plots.     

First-principles calculations of hydrogen molecule adsorption on Ti (0 0 0 1)-(2 × 1) surface

Adsorption of H₂ molecule on the Ti (0 0 0 1)-(2 × 1) surface was studied by density functional theory with generalized gradient approximation (GGA). The parallel and vertical absorption cases were investigated in detail by adsorption energy and electronic structure analysis, we obtained three stable configurations of FCC-FCC (the two H atoms adsorption on the two adjacent fcc sites of Ti (0 0 0 1) surface, respectively), HCP-HCP (the two H atoms adsorption on the two adjacent hcp sites of Ti (0 0 0 1) surface, respectively) and FCC-HCP (the one H atom adsorption on the fcc site and the other adsorption on the near hcp site) based on the six different parallel adsorption sites after the H₂ molecule dissociates. However, all the end configurations of four vertical adsorption sites were unstable, H₂ molecule was very easy to desorb from Ti surface. The H-H bond breaking and Ti-H bond forming result from the H₂ molecule dissociation. H-H bond breaking length ranges from 1.9 Å to 2.3 Å for different adsorption configurations due to the strong Ti-H bond forming. The H₂ dissociative approach and the end stable configurations formation in parallel adsorption processes are attributed to the quantum mechanics steering effects.     

Comparison of the Monte Carlo estimation of surface electrostatic potential at the hematite (0 0 0 1)/electrolyte interface with the experiment

The Monte Carlo simulations of the surface electrostatic potential are presented for the hematite (0 0 0 1) crystal plane. According to the ab initio calculations, the Fe-terminated (0 0 0 1) plane contains only one type of surface groups. The charge of this surface group is predicted using quantum population analyses, and the result is very close to this of the 1-pK model assumption. The surface topology and topography were constructed using the relaxed crystal plane structure. The Monte Carlo simulations for the reduced (including only hydrogen ions) and the extended (containing also electrolyte) models give the linear non-Nernstian pH-profile of surface potential. The simulation results are in agreement with the experimental measurements carried out by Kallay et al. [N. Kallay, Z. Dojnovi?, A. Cop, J. Colloid Interface Sci. 286 (2005) 610-614.] in the point of zero charge vicinity. This suggests that in this pH-region the surface properties are basically governed by the H⁺ ions uptake/release and the electrolyte ions complexations. The discrepancy for strongly acidic and basic regions suggests that some additional processes take place in the single-crystal electrode measurement, which results in the non-linear ψ₀=f(pH) profile.     

Structure, defects, and impurities at the rutile TiO2(0 1 1)-(2 × 1) surface: A scanning tunneling microscopy study

The titanium dioxide rutile (0 1 1) (equivalent to (1 0 1)) surface reconstructs to a stable (2 × 1) structure upon sputtering and annealing in ultrahigh vacuum. A previously proposed model (T.J. Beck, A. Klust, M. Batzill, U. Diebold, C. Di Valentin, A. Selloni, Phys. Rev. Lett. 93 (2004) 036104/1) containing onefold coordinated oxygen atoms (titanyl groups, TiO) is supported by Scanning Tunneling Microscopy (STM) measurements. These TiO sites are imaged bright in empty-states STM. A few percent of these terminal oxygen atoms are missing at vacuum-annealed surfaces of bulk-reduced samples. These O vacancies are imaged as dark spots. Their number density depends on the reduction state of the bulk. Double vacancies are the most commonly observed defect configuration; single vacancies and vacancies involving several O atoms are present as well. Formation of oxygen vacancies can be suppressed by annealing a sputtered surface first in vacuum and then in oxygen; annealing a sputtered surface in oxygen results in surface restructuring and a (3 × 1) phase. Anti-phase domain boundaries in the (2 × 1) structure are active adsorption sites. Segregation of calcium impurities from the bulk results in an ordered overlayer that exhibits domains with a centered (2 × 1) periodicity in STM.     

Atomic geometry, electronic states and possible hydrogen passivation of the InP(1 1 1)A surface

We present a first-principles theoretical study of the atomic geometry and electronics states of the InP(1 1 1)A surface under In- and P-rich conditions. The In-rich surface, characterised by an In vacancy per unit (2×2) cell, obeys the electron counting rule (ECR) and is semiconducting. Under P-rich conditions we have considered two surface reconstructions: (2×2) with 3/4 monolayer (ML) P coverage and () with 1 ML coverage. In complete agreement with a recent experimental work by Li et al., it is found that the () reconstruction is more stable than the (2×2) reconstruction. However, the () reconstruction has a metallic band structure and thus does not satisfy the ECR. The stability of this reconstruction is explained to arise from a competition between the ECR and a significant elastic deformation in the surface region. We confirm the suggestion by Li et al. that this surface can be passivated both chemically as well as electronically with 1/4 ML coverage of hydrogen.     

Structure and dynamics of the missing-row reconstruction on O/Cu(0 0 1) and O/Ag(0 0 1)

The geometry and the vibrational properties of missing row reconstructed O/Cu(0 0 1) and O/Ag(0 0 1) surfaces are investigated by means of density functional theory and density functional perturbation theory, using the local density and the generalized-gradient approximations. Our results predict very similar structural and vibrational properties for the two reconstructed surfaces. In the case of copper our calculations reproduce quite accurately the experimental results, while for the missing row reconstructed O/Ag(0 0 1) surface the agreement between theory and experiment is less satisfactory.     

Ge adsorption on SiC(0 0 0 1): An ab initio study

In this work we have performed an ab initio total energy investigation of the Ge adsorption process on the Si-terminated SiC(0 0 0 1)- and (3 × 3) surfaces. We find that Ge adatoms lying on the topmost sites of the and (3 × 3) surfaces represent the energetically more stable configurations at the initial stage of the Ge adsorption on the SiC(0 0 0 1) surface. The Si → Ge substitutional adsorption processes have been examined as a function of the Si and Ge chemical potentials. Increasing the Ge coverage, we verify that the formation of Ge wetting layer on the surface, and Ge nanocluster on the (3 × 3) surface are the energetically more stable configurations, in accordance with recent experimental findings.     

Progressive changes in atomic structure and gap states on Si(0 0 1) by Bi adsorption

From ab initio studies employing the pseudopotential method and the density functional scheme, we report on progressive changes in geometry, electronic states, and atomic orbitals on Si(0 0 1) by adsorption of different amounts of Bi coverage. For the 1/4 ML coverage, uncovered Si dimers retain the characteristic asymmetric (tilted) geometry of the clean Si(0 0 1) surface and the Si dimers underneath the Bi dimer have become symmetric (untilted) and elongated. For this geometry, occupied as well as unoccupied surface states are found to lie in the silicon band gap, both sets originating mainly from the uncovered and tilted silicon dimers. For the 1/2 ML coverage, there are still both occupied and unoccupied surface states in the band gap. The highest occupied state originates from an elaborate mixture of the p_z orbital at the Si and Bi dimer atoms, and the lowest unoccupied state has a ppσ* antibonding character derived from the Bi dimer atoms. For 1 ML coverage, there are no surface states in the fundamental bulk band gap. The highest occupied and the lowest unoccupied states, lying close to band edges, show a linear combination of the p_z orbitals and ppσ* antibonding orbital characters, respectively, derived from the Bi dimer atoms.     

Surface structure of In/Si(1 1 1) studied by reflection high-energy positron diffraction

We have investigated a quasi-one-dimensional structure of In/Si(1 1 1) surface using reflection high-energy positron diffraction (RHEPD), which is sensitive to the topmost surface structure under the total reflection condition. From the rocking curves, we found that In atoms are located at two different vertical positions, i.e., 0.99 Å and 0.55 Å from the Si zigzag chain in both 4 × 1 (210 K) and 8 × 2 (60 K) phases.     

First-principles study on field evaporation of surface atoms from W(0 1 1) and Mo(0 1 1) surfaces

The simulations of field-evaporation processes for surface atoms on W(0 1 1) and Mo(0 1 1) surfaces are implemented using first-principles calculations based on the real-space finite-difference method. The threshold values of the external electric field for evaporation of the surface atoms, which are ∼6 V/Å for tungsten and ∼5 V/Å for molybdenum, are in agreement with the experimental results. While the threshold value of the electric field and the local-field enhancement around the evaporating atoms agree with those expected from the conclusion of the previous study using structureless jellium, the induced charge around the surface atom has a significant difference from that obtained by the jellium model.     

Atomic structure and electronic properties of Ta(1 1 2) and W(1 1 2) surfaces

We present results of theoretical and experimental studies of the structural and electronic properties of Ta(1 1 2) and W(1 1 2) surfaces. Atomic geometries of these surfaces and their electronic structures have been obtained from the first-principles pseudo-potential calculations based on the density functional theory and the use of the plane wave basis set. In the experimental part of our studies we have performed measurements of the photofield emission spectroscopy. The calculated density-of-states distributions are compared and discussed with energy distributions of electrons extracted from photofield emission characteristics. The photofield emission spectra measured for the surface regions of considered systems present very dense structures of features, while the corresponding dependences obtained for the bulk have much more smooth shape. Experimental results correspond very well with calculated density-of-states distributions.     

Simulations of iodine adsorbed Ge(0 0 1) surface and its STM images

A layer of iodine at Ge(0 0 1) surface develops an ordered structure of iodine atoms bound to Ge dimers. Here are discussed atomic structures of Ge(0 0 1) surface covered by 0.25 monolayer of iodine. The p(2×4), p(2×2), c(2×4) and p(1×4) surface structures are found in calculations. The structure with two iodine atoms of the dissociated I₂ molecule adsorbed at both ends of the same germanium dimer is found to be energetically favourable over iodine adsorption at neighbouring dimers. Simulated STM images of the obtained surface structures are presented and compared with experimental data.     

Adsorption structure of glycine on TiO2(1 1 0): A photoelectron diffraction determination

High-resolution core-level photoemission and scanned-energy mode photoelectron diffraction (PhD) of the O 1s and N 1s states have been used to investigate the interaction of glycine with the rutile TiO₂(1 1 0) surface. Whilst there is clear evidence for the presence of the zwitterion CH₂COO⁻ with multilayer deposition, at low coverage only the deprotonated glycinate species, NH₂CH₂COO is present. Multiple-scattering simulations of the O 1s PhD data show the glycinate is bonded to the surface through the two carboxylate O atoms which occupy near-atop sites above the five-fold-coordinated surface Ti atoms, with a Ti-O bondlength of 2.12 ± 0.06 Å. Atomic hydrogen arising from the deprotonation is coadsorbed to form hydroxyl species at the bridging oxygen sites with an associated Ti-O bondlength of 2.01 ± 0.03 Å. Absence of any significant PhD modulations of the N 1s emission is consistent with the amino N atom not being involved in the surface bonding, unlike the case of glycinate on Cu(1 1 0) and Cu(1 0 0).     

A photoelectron diffraction investigation of vanadyl phthalocyanine on Au(1 1 1)

Scanned-energy mode photoelectron diffraction using the O 1s and V 2p emission perpendicular to the surface has been used to investigate the orientation and internal conformation of vanadyl phthalocyanine (VOPc) adsorbed on Au(1 1 1). The results confirm earlier indications from scanning tunnelling microscopy that the VO vanadyl bond points out of, and not into, the surface. The VO bondlength is 1.60 ± 0.04 Å, not significantly different from its value in bulk crystalline VOPc. However, the V atom in the adsorbed molecule is almost coplanar with the surrounding N atoms and is thus pulled down into the approximately planar region defined by the N and C atoms by 0.52 (+0.14/−0.10) Å, relative to its location in crystalline VOPc. This change must be attributed to the bonding interaction between the molecule and the underlying metal surface.