AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究

首先把本征值方程投影到导带的子空间中, 进而得到AlGaN/GaN量子阱中第一、二子带的Rashba自旋劈裂系数(α ₁, α ₂)和子带间自旋-轨道耦合系数η₁₂. 然后自恰求解薛定谔方程和泊松方程计算了不同栅压的量子阱中的α ₁, α ₂和η₁₂, 并分别讨论了量子阱阱层、左右异质结界面和垒层对它们的贡献. 结果表明可以通过栅压来调节自旋-轨道耦合系数, 子带间自旋轨道耦合系数η₁₂比Rashba自旋劈裂系数α ₁, α ₂小, 但基本在同一数量级.     

Effect of well thickness on the Rashba spin splitting and intersubband spin-orbit coupling in AlGaN/GaN/AlGaN quantum wells with two subbands

By projecting the characteristic equation into the subspace of the conduction band, the Rashba spin splitting coefficient for the first two subbands (α₁, α₂) and the intersubband spin-orbit coupling coefficient (η₁₂) in AlGaN/GaN quantum well structure are obtained. Then sizable α₁, α₂ and η₁₂ in QWs are calculated by solving the Schrödinger and Poisson equations self-consistently. We find that the internal electric field is crucial for considerable spin-orbit coupling effect in III-nitride QWs and the spin-orbit coupling coefficient can be greatly modulated by the well thickness. Compared with the Rashba coefficient, the intersubband spin-orbit coupling coefficient is basically of the same order of magnitude. The results show the great possibility of spin manipulation in low-dimensional semiconductors, and III-nitride QWs are candidates for the design of spintronic devices.     

Anomalous spin-orbit effects in a strained InGaAs/InP quantum well structure

There is currently a large effort to explore spin-orbit effects in semiconductor structures with the ultimate goal of manipulating electron spins with gates. A search for materials with large spin-orbit coupling is therefore important. We report results of a study of spin-orbit effects in a strained InGaAs/InP quantum well. The spin-orbit relaxation time, determined from the weak antilocalization effect, was found to depend nonmonotonically on gate voltage. The spin-orbit scattering rate had a maximum value of 5×10¹⁰ s^?1 at an electron density of n=3×10¹⁵ m^?2. The scattering rate decreased from this for both increasing and decreasing densities. The smallest measured value was approximately 10⁹ s^?1 at an electron concentration of n=6×10¹⁵ m^?2. This behavior could not be explained by either the Rashba or the bulk Dresselhaus mechanisms but is attributed to asymmetry or strain effects at dissimilar quantum well interfaces.     

Rashba effect of the bound magnetopolaron in an asymmetry quantum well

Using Pekar variational method, we studied the Rashba effect of the bound magnetopolaron in an asymmetry quantum well. The expression of the ground state energy of the bound magnetopolaron is obtained by theoretical derivation. Due to the influence of the Rashba effect, the ground state energy of the bound magnetopolaron splits into two branches. This phenomenon fully demonstrates that the influence of orbit and spin interaction in different directions on the energy of the polaron is not negligible. Because the contribution of the magnetic field cyclotron resonance frequency to the Rashba spin–orbit splitting is a positive value, the energy spacing becomes larger as the magnetic field cyclotron resonance frequency increases. Due to the presence of impurities, the polaron is more stable than the bare electron state, and the energy splitting is more stable.     

Transport polygonal properties in a multi-terminal regular quantum ring with Rashba spin-orbit coupling

<正>Transport properties in a multi-terminal regular polygonal quantum ring with Rashba spin-orbit coupling(SOC) are investigated analytically using quantum networks and the transport matrix method.The results show that conductances remain at exactly the same values when the output leads are located at axisymmetric positions.However,for the nonaxisymmetrical case,there is a phase difference between the upper and lower arm,which leads to zero conductances appearing periodically.An isotropy of the conductance is destroyed by the Rashba SOC effect in the axisymmetric case. In addition,the position of zero conductance is regulated with the strength of the Rashba SOC.     

低温InGaAs/InAlAs多量子阱的分子束外延生长与表征

采用气源分子束外延(GSMBE)生长了低温InGaAs材料,研究了生长温度及As压对InGaAs材料性质的影响,得到优化的生长条件为:生长温度为300 ℃、As压为77.3 kPa。通过Be掺杂,并采用In0.52Al0.48As/In0.53Ga0.47As多量子阱结构,将材料的方块电阻提高到1.632106 /Sq,载流子数密度降低至1.0581014 cm-3。X射线衍射结果表明:InGaAs多量子阱材料具有较高的晶体质量。这种Be掺杂InGaAs多量子阱材料缺陷密度大且电阻率高,是制作太赫兹光电导天线较理想的基质材料。收稿日期:; 修订日期:     

低温InGaAs/InAlAs多量子阱的分子束外延生长与表征

采用气源分子束外延(GSMBE)生长了低温InGaAs材料,研究了生长温度及As压对InGaAs材料性质的影响,得到优化的生长条件为：生长温度为300 ℃、As压为77.3 kPa。通过Be掺杂,并采用In0.52Al0.48As/In0.53Ga0.47As多量子阱结构,将材料的方块电阻提高到1.632106 /Sq,载流子数密度降低至1.0581014 cm-3。X射线衍射结果表明：InGaAs多量子阱材料具有较高的晶体质量。这种Be掺杂InGaAs多量子阱材料缺陷密度大且电阻率高,是制作太赫兹光电导天线较理想的基质材料。收稿日期:; 修订日期:     

Determination of electron effective mass from optical transition energy in InGaAs/InAlAs quantum wells

Nonparabolic effective mass of conduction subbands in InGaAs/InAlAs quantum wells (QWs), lattice-matched to InP, was quantitatively obtained by analyzing interband-optical transition spectra. Thickness of InGaAs well was 5.3, 9.4, and . Thickness of InAlAs barrier was about , and each QW was independent. Excellent agreement was obtained between experimental mass and theoretical mass predicted by Kane's three-level band theory on bulk InGaAs, in a wide energy range of from the bandedge. Method of experimental analysis on a relation between eigen energy and effective mass was described.     

Fano effect in a T-shaped double quantum dot structure in the presence of Rashba spin-orbit coupling

The influence of Rashba spin-orbit coupling on the Fano lineshape of the conductance spectrum in a T-shaped double quantum dot structure is theoretically studied. By second-quantizing the electron Hamiltonian in this structure, it is found that the Rashba interaction brings about a spin-flip interdot hopping term. With the enhancement of the Rashba interaction, this term separates the two resonant peaks in the conductance spectrum from each other. More importantly, it causes the broadening of the narrow Fano peak, and the narrowing of the broader peak. Finally, the asymmetric Fano lineshape changes into a symmetric profile in the global conductance spectrum.     

Coherent quantum transport in two-dimensional electron gas/superconductor double junctions with Rashba spin-orbit coupling

Based on the extended Blonder-Tinkham-Klapwijk (BTK) approach, we have investigated the coherent quantum transport in two-dimensional electron gas/superconductor (2DEG/SC) double tunneling junctions in the presence of the Rashba spin-orbit coupling (RSOC). It is found that all the reflection coefficients in BTK theory as well as conductance spectra oscillate with the external voltage and energy. The oscillation feature of conductance can be tuned largely by the RSOC for low insulating barriers, while for high insulating barriers it is almost independent of the RSOC. These phenomena are essentially different from those found in ferromagnet/superconductor double tunneling junctions.     

Rashba spin-orbit splitting energy of a pressure induced hydrogenic donor impurity in a corrugated quantum well

Pressure induced hydrogenic donor impurity of ground and excited state in a GaAlAs/GaAs/GaAlAs corrugated quantum well is investigated. The calculations have been carried out using variational technique within the single band effective mass approximation taking into account the anisotropy and the corrections due to the conduction band nonparabolicity. The energy dependent effective mass and the position dependent quantity (Rashba spin-orbit splitting energy) are introduced to obtain the binding energy as a function of well width in the influence of pressure. The obtained results are compared with the other existing literature available.     

InGaAs/InAlAs多量子阱脊形波导及定向耦合器光波特性准矢量分析

提出了一种基于级数展开的三维准矢量束传播法(SE-QV-BPM)用以分析由InGaAs/InAlAs多量子阱构成的脊形光波导及定向耦合器.结果表明，刻蚀深度相同时，TM模比TE模在水平方向限制强，且TM模的模场在波导角上出现畸变；波导间距相同时，定向耦合器TM波的耦合长度大于TE波的耦合长度，对偏振态敏感.分析获得了浅/深刻脊形光波导承载的准矢量TE/TM基模、定向耦合器承载的TE/TM偶/奇模的模场分布及其有效折射率，模拟了光场在定向耦合器中的传输演变情况.另外，SE-QV-BPM导出矩阵小，计算效率高 关键词： 级数展开 准矢量束传播法 多量子阱 InGaAs/InAlAs     

Spin current and its heat effect in a multichannel quantum wire with Rashba spin-orbit coupling

Using the perturbation method,we theoretically study the spin current and its heat effect in a multichannel quantum wire with Rashba spin-orbit coupling.The heat generated by the spin current is calculated.With the increase of the width of the quantum wire,the spin current and the heat generated both exhibit period oscillations with equal amplitudes.When the quantum-channel number is doubled,the oscillation periods of the spin current and of the heat generated both decrease by a factor of 2.For the spin current j s,xy,the amplitude increases with the decrease of the quantum channel;while the amplitude of the spin current j s,yx remains the same.Therefore we conclude that the effect of the quantum-channel number on the spin current j s,xy is greater than that on the spin current j s,yx.The strength of the Rashba spin-orbit coupling is tunable by the gate voltage,and the gate voltage can be varied experimentally,which implies a new method of detecting the spin current.In addition,we can control the amplitude and the oscillation period of the spin current by controlling the number of the quantum channels.All these characteristics of the spin current will be very important for detecting and controlling the spin current,and especially for designing new spintronic devices in the future.     

单边掺杂InAlAs/InGaAs单量子阱中二维电子气的磁输运特性

研究了双子带占据的In_0.52Al_0.48As/In_0.53Ga_{0 .47}As单量子阱中磁电阻的Shubnikov-de Haas(SdH)振荡效应和霍耳效应，获得了不 同子带电子的浓度、迁移率、有效质量和能级位置.低磁感应强度(B＜1.5T)下由迁移率谱和 多载流子拟合相结合的方法得到的各子带电子浓度与通过SdH振荡得到的结果一致.在d ²ρ/dB²-1/B的快速傅里叶变换 关键词： InAlAs/InGaAs单量子阱 SdH振荡 二维电子气 磁致子带间散射     

Thermal interdiffusion in InGaAs/GaAs and GaAsSb/GaAs strained quantum wells as a function of doping density

We studied the thermal stability and interdiffusion of InGaAs/GaAs and GaAsSb/GaAs single quantum wells as a function of temperature for both Be and Si doping at various doping concentrations. The interdiffusion was monitored using the photoluminescence from the ground states of the valence- and conduction-band quantum wells. Using a Green's function method to solve the diffusion equation, assuming Fick's law behaviour, the evolution of the well shape during annealing was determined, and Schrödinger's equation was solved for this well shape to provide the ground-state energy levels of the system using the diffusion constant as the only fitting parameter. The validity of this model as applied to both systems is discussed.Strained Layer Structures Research Group.     

Effect of confinement on the weak antilocalization in InGaAs/InP quasi-1D structures

Magnetotransport properties of quasi-one-dimensional (quasi-1D) quantum wires based on InGaAs/InP heterojunctions were studied. The influence of the wire width as well as of the temperature on the weak antilocalization was investigated. A crossover from the weak antilocalization to the weak localization regime was observed in the very narrow wires. The analysis of the characteristic scattering lengths suggests a strong effect of the electron confinement and diffusive boundary scattering on the suppression of the weak antilocalization.     

Effect of Rashba spin-orbit coupling on electron transport in asymmetrically coupled regular polygonal quantum ring

The effect of Rashba spin-orbit coupling (SOC) on electron transport in asymmetrically coupled regular polygonal quantum ring is investigated. In absence of SOC, two kinds of conductance zeros appear periodically. In presence of SOC, one kind of conductance zero can be lifted by the Rashba SOC, the others persist.     

Probing nonparabolic conduction subbands in nanoscale InGaAs/InAlAs quantum wells with cyclotron resonance in very high magnetic fields

Nonparabolicity of conduction subbands in nanoscale potential wells has been probed using InGaAs/InAlAs multi-quantum well structures. From cyclotron resonance absorption at a wavelength of 119 μm, the apparent mass ratio was found to be 0.061 near the bottom of the ground subband. From cyclotron resonance absorption at a wavelength of 10.6 μm, the apparent mass ratio of high-energy electrons was found to be 0.066–0.067, which was higher than the bulk bandedge mass ratio, 0.041. Evidence of the two-dimensional conduction subbands was examined by an interband absorbance spectrum.     

Lineshape analysis of photoreflectance spectra from InGaAs/GaAs quantum wells

The fundamental optical transitions in In_0.15Ga_0.85As/GaAs single symmetric quantum wells (QWs) are studied through photoreflectance (PR) measurements and their dependence on the well distance from the surface. A phase rotation of the lineshape of the PR signal is observed as was predicted in our previous works. PR spectra of several samples, measured at 77 K, are compared with results of PR lineshape calculations, and a fairly good agreement is found. The quantum-confined Stark effect is shown to be the dominant modulation mechanism in the QW. Pronounced interference effects make PR spectra from QWs sensitive to the cap layer thickness.