A model for growth directional features in silicon nanowires

Long silicon nanowires (SiNWs) grown by laser ablation or by thermal evaporation of monoxide source materials are primarily oriented in the <112> direction, and some in the <110> direction, but rarely in the <100> or <111> directions. We propose a model to explain these SiNW growth directional features. The model consists of two parts. Part one is concerned with mechanism-based criteria and part two with applying these criteria to explain the experimental results. Four criteria are considered: (i) the stability of a Si atom occupying a surface site; (ii) the Si {111} surface stability in the presence of oxygen; (iii) the stepped Si {111} surface layer lateral growth process; and (iv) the effect of dislocations in providing perpetuating {111} steps to facilitate SiNW growth. Analyses of SiNW growth in accordance with these criteria showed that <112> and <110> are the preferred SiNW growth directions, and that <111> and <100> are not. Received: 12 November 2001 / Accepted: 20 November 2001 / Published online: 23 January 2002     

Recent experiments with mapon spectroscopy

Electric quadrupole interactions of impurity nuclei in single crystals of⁵⁴MnNi,¹²⁵SbNi and¹²⁵SbFe have been studied as a function of crystal field direction and applied magnetic field using MAPON. Distributions are in all cases broad compared with the mode values of the EQI's. For⁵⁴MnNi the mode efg is isotropic to better than 5% between the easy <111> axis and a hard <100> axis. The efg is +0.88 (15)x 10¹⁹ Vm⁻². The mode efg for¹²⁵SbFe along its easy <100> axis is one half of that along a hard <112> axis, and one third of that measured along the easy <111> axis of¹²⁵SbNi. The much larger efg mode and distribution seen in¹²⁵SbNi, for four to eight times greater dilution than for¹²⁵SbFe, suggests intrinsic contributions due to valence screening effects in the more itinerant nickel host.     

Growth and field emission properties of globe-like diamond microcrystalline-aggregate

The globe-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The ceramic with a Ti mental layer was used as substrate. The fabricated diamond was evaluated by Raman scattering spectroscopy, X-ray diffraction spectrum (XRD), and scanning electron microscope (SEM). The field emission properties were tested by using a diode structure in a vacuum. A phosphor-coated indium tin oxide (ITO) anode was used for observing and characterizing the field emission. It was found that the globe-like diamond microcrystalline-aggregates exhibited good electron emission properties. The turn-on field was only 0.55 V/μm, and emission current density as high as 11 mA/cm² was obtained under an applied field of 2.9 V/μm for the first operation. The growth mechanism and field emission properties of the globe-like diamond microcrystalline-aggregates are discussed relating to microstructure and electrical conductivity.     

Pulsed fm NMR/on studies of single crystal54MnNi and125SbFe

Precision field shift studies of B_appl-8T using pulsed FM NMR/ON along hard directions (eg <100>⁵⁴MnNi, <112>¹²⁵SbFe and the easy axis (<111>⁵⁴MnNi, <100>¹²⁵SbFe) yield no measurable Knight shifts within the uncertainty allowed by current accuracy of the nuclear moments. This is in striking contrast to earlier measurements with the same apparatus that yielded K=+1.5 (4)% for⁶⁰CoFe. The modulation frequency dependences of the pulsed FMNMR/ON signals are investigated for a variety of rf parameters and compared with model predictions.     

Effects of gas pressure on the synthesis and photoluminescence properties of Si nanowires in VHF-PECVD method

Silicon nanowires (SiNWs) were grown on an Au-coated Si(111) substrate at various gas pressures by very high frequency plasma enhanced chemical vapor deposition via the vapor–liquid–solid mechanism. The synthesized SiNWs were characterized by field emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray diffraction, high-resolution transmission electron microscopy, Raman spectroscopy and photoluminescence (PL). The SiNWs were sharp needle-shaped and possessed highly crystalline core and oxide amorphous shell. As the gas pressure increases from 70 mtorr to 85 mtorr, the average diameter of the SiNWs decreases from 250 nm to 70 nm. Furthermore, the density of the nanowires increases with the gas pressure. The PL spectra revealed a peak at about 400 nm and a broadband emission at about 700 nm.     

Growth,structure, and cathodoluminescence of Dy-doped ZnO nanowires

Dy-doped ZnO nanowires have been prepared using high-temperature and high-pressure pulsed-laser deposition. The morphology, structure, and composition of the as-prepared nanostructures are characterized by field emission scanning electron microscopy, X-ray diffraction, Raman scattering spectrometry, X-ray photoelectron spectrometry, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The alloying droplets are located at the top of the as-prepared Dy-doped ZnO nanowires, which means that the growth of the Dy-doped ZnO nanowires is a typical vapor-liquid-solid process. The luminescence properties of Dy-doped ZnO nanowires are characterized by cathodoluminescence spectra and photoluminescence spectra at low temperature (8 K). Two peaks at 481 and 583 nm, respectively, are identified to be from the doped Dy³⁺ ions in the CL spectra of Dy-doped ZnO nanowires.     

一氧化碳合成金刚石薄膜的形貌和结构分析

利用微波等离子体化学气相沉积(MPCVD)技术，采用偏压增加成核(BEN)、两步生长的方法在一氧化碳(CO)和氢气(H₂)的环境下制备了金刚石薄膜. 利用扫描电子显微镜(SEM)、Raman光谱仪和透射电子显微镜(TEM)对金刚石薄膜的形貌和结构进行了分析. 研究发现金刚石晶粒在第一步成核及生长的过程中产生了层错和孪晶，而在第二步的生长过程中产生的层错和孪晶很少，最终形成的金刚石晶粒外表面比较光滑，包含有近五次对称或者平行的片状的孪晶，并可以观察到少量的位错. 而在样品的边缘由于等离子体的不均匀产生了比样品中心成核密度低的区域. 在这个区域中，发现了一个新的非金刚石的碳结构.     

Study of molecular beam epitaxy of cadmium telluride on sapphire

The effect of thermal treatment of (0001) sapphire substrates on the structure of cadmium telluride films grown by molecular beam epitaxy was investigated. The growth process was carried out on a laboratory facility equipped with a mass spectrometer and electron diffractometer. It was established that no annealing or annealing in vacuum (P < 0.13 Pa) results in the growth of polycrystalline CdTe films. Epitaxial CdTe films with a cubic structure of the sphalerite type oriented with the (111) plane parallel to the substrate grow on the substrates annealed in air at T > 1000°C. Electron diffraction patterns showed that they have a mosaic structure and contain twins with the 〈111〉 twinning axis. Atomic-force microscopic images revealed CdTe crystallites with lateral sizes of ∼50 nm arranged along the steps on the sapphire substrate surface. These results allowed the conclusion to be drawn that the growth of CdTe on sapphire substrates can occur by the formation of the three-dimensional nucleation centers according to the Volmer-Weber mechanism.     

The Ag+ induced solution–liquid–solid growth, photoluminescence and photocatalytic activity of twinned ZnSe nanowires

Cubic ZnSe nanowires with periodically alternating twins along the wire growth direction are synthesized in the ZnCl₂–Na₂SeO₃–AgNO₃–ethylenediamine (EN)-ethylene glycol (EG)-polyvinyl–pyrrolidone (PVP) solvothermal system at 180°C for 12 h. The twinned ZnSe nanowires have diameters of 75±10 nm and lengths of >10 micrometers, and grow along 〈111〉 direction. The role of AgNO₃ in the formation of ZnSe nanowires was investigated, and an Ag⁺ induced solution–liquid–solid growth mechanism is also proposed to account for the conversion of microspheres assembled from ZnSe nanocrystallites into ZnSe nanowires. Compared with ZnSe microspheres, the as-prepared twinned ZnSe nanowires exhibit stronger band edge emissions of the wurtzite- and zinc-blende-structured ZnSe and lower deep defect related emission, and their photocatalytic ability is weaker than that of ZnSe microspheres. The results suggest that this simple, mild, one-step solution approach to fabricate ZnSe nanowires may be employed for the synthesis of other selenium compounds with one dimensional nanostructures, and provides opportunities for both fundamental research and technological applications.     

Orientation and Rate Dependence of Wave Propagation in Shocked Beta-SiC from Atomistic Simulations

The orientation dependence of planar wave propagation in beta-SiC is studied via the molecular dynamics （MD） method. Simulations are implemented under impact loadings in four main crystal directions, i.e., （lO0）, （llO）, 〈111〉, and 〈112}. The dispersion of stress states in different directions increases with rising impact velocity, which implies the anisotropic characteristic of shock wave propagation for beta-SiC materials. We also obtain the Hugoniot relations between the shock wave velocity and the impact velocity, and find that the shock velocity falls into a plateau above a threshold of impact velocity. The shock velocity of the plateaux is dependent on the shock directions, while 〈111} and 〈112/ can be regarded as equivalent directions as they almost reach the same plateau. A comparison between the atomic stress from MD and the stress from Rankine-Hugoniot jump conditions is also made, and it is found that they agree with each other very well.     

Electron Backscattered Diffraction of Transgranular Crack Propagation in Soft Steel

We consider the crack propagation in a soft steel sheet during the formation. The drawability is considered in relation with the structural anisotropy, the mechanical behaviour is related to both the grain morphology and the texture. The structure heterogeneity could lead to the apparition of micro-cracks. The results show the texture effect on the crack propagation and on the crack arrest in soft steel during the formation. The EBSD technique allows to show that the adjustment of the grain orientation from the initial main component {111}（112） towards the deformation orientation {111}（110） incites a trans-granular crack through a grain with initial {111}（112） orientation in a globally ductile material. It is the presence of grains with {111}（110） orientation which permits the closing of micro-cracks.     

Growth of iron single crystals in the etched ion tracks of polymer foils

Pulse reverse electrolysis in an ultrasonic field is used to grow iron single crystals of micron size in templates formed by etching the tracks of swift ions in polymer foils. High-grade crystals are produced from high-temperature ferrous chloride baths. The crystals are oriented along their <110>, <100>, and <111> crystallographic axes. Their orientation turns out to depend on supersaturation during the growing process. At low overvoltages of deposition, <110> and <100> orientations are observed. The crystals of <111> orientation appear more frequently at higher cathode pulse current density. The crystals possess prominent resistance to corrosion. Received: 20 February 2001 / Accepted: 21 February 2001 / Published online: 3 May 2001     

Characterization of silicon nanowires grown on silicon, stainless steel and indium tin oxide substrates

Silicon nanowires (SiNWs) have been grown on crystalline silicon (Si), indium tin oxide (ITO) and stainless steel (SS) substrates using a gold catalyst coating with a thickness of 200 nm via pulsed plasma-enhanced chemical vapor deposition (PPECVD). Their morphological, mineralogical and surface characteristics have been investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman analysis. SiNWs growth is accompanied by oxidation, thus yielding partially (SiO _x ) and fully oxidized (SiO₂) Si sheaths. The mean diameters of these SiNWs range from 140 to 185 nm. Si with (111) and (220) planes exists in SiNWs grown on all three substrates while Si with a (311) plane is detected only for Si and ITO substrates. Computational simulation using density functional theory (DFT) has also been conducted to supplement the experimental Raman analyses for crystalline Si and SiO₂. XPS results reveal that ca. 30 % of the SiNWs have been oxidized for all substrates. The results presented in this paper can be used to aid selection of appropriate substrates for SiNW growth, depending on specific applications.     

TEM and photoluminescence characterization of porous-silicon layers from <111>-oriented p + silicon substrates

Summary A first structural investigation, carried out by transmission electron microscopy on porous-silicon samples fromp ⁺, <111>-oriented substrates is presented. The samples, which show intense visible room temperature luminescence, are composed by an interconnected network of crystalline nanostructures. Evidences of the pores propagation along the <100> directions are provided. The optical and morphological characteristics of the investigated samples are found to be much similar to those of samples coming fromp-type, non-degenerate, <100>-oriented substrates rather than those obtained from <100> substrates with comparable resistivity. This striking effect is explained by invoking different etch-limiting mechanisms during pore formation. Their relative weights are proposed to depend on the crystallographic orientation of the silicon specimen subjected to etching. Paper presented at the III INSEL (Incontro Nazionale sul Silicio Emettitore di Luce), Torino, 12–13 October 1995.     

氦气对MPCVD沉积金刚石的影响

为了确定添加氦气对微波等离子体化学气相沉积(MPCVD)金刚石膜的影响,采用发射光谱法(OES)在线诊断了CH₄-H₂-He等离子体的发射光谱特性,研究了He对等离子体内基团空间分布的影响;并利用扫描电子显微镜(SEM)和拉曼(Raman)光谱对不同He体积分数下沉积出的金刚石膜进行了表征。结果表明：随着He体积分数的增加,等离子体内H_α, H_β, H_γ, CH和C₂基团的谱线强度均呈上升趋势,其中H_α基团的谱线强度增加最大。光谱空间诊断发现He的加入导致等离子体中各基团的空间分布均匀性变差,造成沉积出的金刚石膜厚度极不均匀。沉积速率测试表明,He的加入导致碳源基团相对浓度增加,有利于提高薄膜的沉积速率,当He体积分数由0 vol.%增加至4.7 vol.%时,沉积速率提高了24%。SEM测试结果表明,随着He体积分数的增加,金刚石膜表面形貌由(111)晶面取向向晶面取向混杂转变,孪晶生长明显。高He(4.7 vol.%)体积分数下由于C₂基团的相对浓度较高,导致二次形核密度增加。此外,由于基片台受到等离子体的刻蚀和溅射作用,导致薄膜沉积过程中引入了金属杂质原子。二次形核和杂质原子的存在使得孪晶大量的产生,薄膜呈现出压应力。     

Electronic structure effects on stability and quantum conductance in 2D gold nanowires

In this study, we have investigated the stability and conductivity of unsupported, two-dimensional infinite gold nanowires using ab initio density functional theory (DFT). Two-dimensional ribbon-like nanowires with 1–5 rows of gold atoms in the non-periodic direction and with different possible structures have been considered. The nanowires with >2 rows of atoms exhibit dimerization, similar to finite wires, along the non-periodic direction. Our results show that in these zero thickness nanowires, the parallelogram motif is the most stable. A comparison between parallelogram- and rectangular-shaped nanowires of increasing width indicates that zero thickness (111) oriented wires have a higher stability over (100). A detailed analysis of the electronic structure, reveals that the (111) oriented structures show increased delocalization of s and p electrons in addition to a stronger delocalization of the d electrons and hence are the most stable. The density of states show that the nanowires are metallic and conducting except for the double zigzag structure, which is semiconducting. Conductance calculations show transmission for a wide range of energies in all the stable nanowires with more than two rows of atoms. The conductance channels are not purely s and have strong contributions from the d levels, and weak contributions from the p levels.     

The effects of Xe irradiation on He and H co-implanted Si

A combination of X-ray diffraction, cross-sectional transmission electron microscopy (XTEM), and Raman spectroscopy was used to study the effects of irradiation with swift heavy ions on helium and hydrogen co-implanted silicon.<100>-oriented silicon wafers were co-implanted with 30 keV helium to a dose of 3×10¹⁶He⁺/cm² and 24 keV protons to a dose of 2×10¹⁶ H⁺/cm². Moreover, selected helium and hydrogen co-implanted Si wafers were irradiated with 94 MeV xenon. After He and H co-implantation and Xe-irradiation, the wafers were annealed at a temperature of 673 K for 30 min. The damage region of the wafers was examined by the XTEM analysis. The results reveal that most of the platelets are aligned parallel to the (100) plane in the He and H co-implanted Si. However, majority of the platelets lie in<texlscub>111</texlscub>planes after Xe irradiation. Blisters do not occur on the sample surface after Xe irradiation. Raman results reveal that the intensities of both SiH₂ and V₂H₆ modes increase with the increase in the dose of Xe. A possible explanation is that strong electronic excitation during Xe irradiation produces annealing effect, which reduces both lattice damage and the out-of-plane tensile strain.     

EPR of the lithium ion-dangling bond complex in germanium containing dislocations

We have observed a new EPR spectrum in a lithium-diffused germanium crystal N_D-N_A ≈ 10¹³ cm^-3) containing dislocations. The principal g values are 1.917 ± 0.002, 1.896 ± 0.002, and 0.855 ± 0.010 along the axes <1$\text{1}$0>, <11$\text{2}$>, and <111>, plus equivalent sets. As this new spectrum is seen in lieu of the dislocation dangling bond spectrum, we attribute it to a lithium ion- dislocation dangling bond complex.     

Pressure dependence of the electrical resistivity and the ionization energy of Cr In n-type InP

The electrical resistance of chromium-doped, n-type InP has been found to increase exponentially with hydrostatic pressure (up to 4.7 kbar) at 273 K, 301 K, and 344 K. The resistivity activation energy increases by 6.5 × 10^-6 eV/bar. This rate equals the difference between the pressure dependences of the lowest conduction band minimum at $\text{k}$ = (000) and the <111> subsidiary minima determined by others. Our results indicate that pressure increases the ionization energy of a Cr donor level whose wave function has a large contribution from the <111> minima. It is suggested the Cr donor level is due to Cr⁺³ occupying an indium site.     

First principles cluster investigation of electronic structure and hyperfine interaction for nitrogen in diamond

The self-consistent field Unrestricted Hartree-Fock cluster procedure has been used to study the location, electronic structure and hyperfine properties of nitrogen impurity in diamond. From the analysis of the potential energy curve for nitrogen along the <111> axis, it was found that nitrogen is located at a position 0.3A away from the substitutional site towards the plane formed by the three nearest neighbour carbon atoms. The calculated values of the magnetic hyperfine constants and nuclear quadrupole coupling constants for¹⁴N agree very well with values obtained from electron paramagnetic resonance and electronnuclear double resonance measurements.