Dislocation luminescence of germanium

The dependence of dislocation luminescence of p- and n-Ge is investigated using different doping concentrations and ranges of pumping power. Three luminescence bands can be chosen. The main band (0.5 eV) is supposed to be due to the transition of the conduction band electron to the dangling bond, and is effective at any experimental conditions. Two other bands are rather sensitive to the dopant type. This enables us to suggest the model of the corresponding transitions in donor-acceptor recombination terms.     

Structure and properties of the pure and Pr-doped Ge25Ga5Se70 and Ge30Ga5Se65 glasses

The Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ pure and Pr³⁺-doped glasses were prepared by direct synthesis from elements and PrCl₃. It was found that up to 1 mol% PrCl₃ can be introduced in the Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ glasses. Both types of glasses with overstoichiometric and substoichiometric content of Se were homogeneous and of black color. The optical energy gap is E^opt_g=2.10 eV, and the glass transition temperature is T_g=543 K for Ge₂₅Ga₅Se₇₀ and T_g=633 K for Ge₃₀Ga₅Se₆₅. The long-wavelength absorption edge is near 14 μm and it corresponds to multiphonon processes. Doping by Pr³⁺ ions creates absorption bands in transmission spectra, which can be assigned to the electron transitions from the ground ³H₄ level to the higher energy levels of Pr³⁺ ions ³H₅, ³H₆, ³F₂, ³F₃ and ³F₄, respectively. By excitation with YAG:Nd laser line (1064 nm), two intense luminescence bands (1343 and 1601 nm) were excited. The first band can be ascribed to electron transitions between ¹G₄ and ³H₅ energy levels of Pr³⁺ ions. Full width at half of maximum (FWHM) of the intensity of luminescence was found to be 70 nm for (Ge₂₅Ga₅Se₇₀)_1 − x(PrCl₃)_x and (Ge₃₀Ga₅Se₆₅)_1 − x(PrCl₃)_x glasses. The FWHM in selenide glasses is lower than in halide and sulphide glasses. The second luminescence band (1601 nm) can be probably ascribed to the transitions between ³F₃ and ³H₄ energy levels of Pr³⁺ ions. The absorption and luminescence spectra of Pr³⁺ ions in studied glasses are slightly influenced by stoichiometry of glassy matrix. The Raman spectra of studied glasses were deconvoluted and assignment of Raman bands to individual vibration modes of basic structural units was suggested. The structure of studied glasses is mainly formed by corner-sharing and edge-sharing GeSe₄ tetrahedra. The vibration modes of Ga-containing structural units were not found, they are apparently overlapping with Ge-containing structural units due to small difference between atomic weights of Ge and Ga. In the glasses with substoichiometry of Se, the Ge–Ge bonds of Ge₂Se₆ structural units were found. In Se-rich glasses the Se–Se vibration modes were found. In all studied glasses also ‘wrong' bonds between like atoms were found in small amounts. Maximum phonon energy of studied glasses is 320 cm⁻¹.     

Absorption and luminescence in amorphous SixGe1-xO2 films fabricated by SPCVD

Optical absorption and photoluminescence of Ge-doped silica films fabricated by the surface-plasma chemical vapor deposition (SPCVD) are studied in the 2–8 eV spectral band. The deposited on silica substrate films of about 10 μm in thickness are composed as x·GeO₂-(1-x)·SiO₂ with x ranging from 0.02 to 1. It is found that all as‐deposited films do not luminesce under the excitation by a KrF (5 eV) excimer laser, thus indicating lack of oxygen deficient centers (ODCs) in them. After subsequent fusion of silicon containing (x < 1) films by a scanning focused CO₂ laser beam absorption band centered at 5 eV as well as two luminescence bands centered at blue (3.1 eV) and UV (4.3 eV) wavelengths arise, highlighting the formation of the ODCs. The excitation of unfused SPCVD films by an ArF (6.4 eV) excimer laser yields a luminescence spectrum with two bands typical for the ODCs, but with a faster decay kinetics. Intensities of these bands grow up with samples cooling down to a temperature of 80–60 K. Unfused films excited by the ArF laser also demonstrate luminescence due to recombination of a trapped charge resulted from the excitation of localized electron states of the glass network. In the unfused GeO₂ film luminescence related to a self-trapped exciton (STE) typical for GeO₂ crystals with α-quartz structure is observed. The observed STE luminescence can be indicative of the crystalline fraction availability in the film. Whereas GeO₂ crystals are known as not containing twofold coordinated germanium, a polycrystalline inclusion in the SPCVD GeO₂ film serves as a factor explaining the absence of any spectroscopic manifestation of this type of defects in it even after fusion. On the other hand, lack of STE luminescence in other unfused films with x < 1 testifies truly amorphous state of the matter in them.     

Optical absorption study on radiation damage in fluoride glasses

The effect of 1.7 MeV electrons on the coloration of fluorozirconate (ZBL) and fluorohafnate (HBL) glasses has been investigated. Irradiation can produce intense broad absorption bands at 325 nm and 253 nm in the glasses. However, the size and shape of the absorption bands in zirconate-based glass (ZBLA) which has Al³⁺ ions as network stabilizers is different from those in ZBL and HBL glass. The optical absorption bands due to self-trapped hole centers can be assigned from dichroic absorption measurements. It appears that the radiolysis damage mechanism may contribute to the coloration of these fluoride glasses.     

Strong enhancement of the optical and electrical properties, and spontaneous formation of an ordered superlattice in(111)B AlGaAs

Strong enhancement in the luminescence intensity is observed in Al_0.22Ga_0.78As epitaxial layers grown on misoriented (111)B GaAs as compared to those simultaneously grown on (100) GaAs. For a 1° misorientation the luminescence intensity is almost 1° to 1000 times that of the (100) layers, depending on the growth temperature. Room temperature electron mobility for 3° misoriented (111)B Al_0.18Ga_0.82As is 19% higher than that for side-by-side grown (100). The strong luminescence associated with a large red shift of 90 meV and the 19% mobility enhancement are related to the long range composition ordering in (111)B AlGaAs, which is observed by cross-sectional transmission electron microscopy in a 280 å Al_0.4GaAs quantum well heterostructure with Al_0.7GaAs barriers grown on (111)B GaAs substrates.     

Luminescence of crystals of divalent tungstates

Crystals of divalent tungstates are characterized by two main luminescence spectral ranges: a short-wavelength (blue) luminescence band in the range 390–420 nm and a group (often two groups) of longer wavelength (green) bands in the range 480–520 nm. For crystals of calcium, strontium, barium, cadmium, magnesium, zinc, and lead tungstates, it is shown that the wavelength corresponding to the maximum of the blue luminescence band (λ_max) correlates with the melting temperature (T_m) of these compounds. The position of the blue luminescence band is the same (in the range 510–530 nm) for crystals with different divalent cations. Annealing in vacuum and electron irradiation decrease the intensity of both blue and green luminescence bands but do not change the ratio of their maximum intensities. This circumstance suggests that vacancies serve as luminescence quenchers to a greater extent rather than facilitate the formation of emission centers responsible for a particular luminescence band.     

The effect of electron irradiation on the luminescence of cadmium and lead tungstates

It is shown that the intensity of luminescence of cadmium tungstate crystals changes nonmonotonically under electron irradiation. At low irradiation doses, an increase in the luminescence intensity can be observed. However, with an increase in the irradiation dose, the luminescence intensity decreases. The effect observed can be explained by the competition of two processes: increase in the number of luminescence centers and nonradiative recombination under the action of irradiation.     

CaF2∶Dy的热释光特性研究

经测量与分析得出,CaF2∶Dy受X射线辐照后在25～290K及300～670K范围内有76、84、137、170、349、363、388、414、437、465K等热释光(TL)峰,各峰均含4个窄发光带,其中心波长分别为480、575、675及775nm。由X射线激发导致的辐射致发光(RL)谱中除上述4个窄带外在较短波长处还有宽带出现。由对发光曲线的分析中得出的动力学参数值推测,窄带发光可能是由较为邻近的空穴-Dy2+贯穿势垒复合而形成,而宽带则可能是激子或自俘激子发光。380K以下的TL峰在室温下很不稳定,可见光对上述各TL发光都有衰减作用。     

Eu2+,Dy3+共激活铝酸锶发光材料长余辉发光机理探讨

文章探讨了Eu2+,Dy3+共激活铝酸锶发光材料长余辉发光机理.认为在Eu2+激活的铝酸锶发光材料中,被激发的电子与空穴的重新结合产生了发光(荧光)现象;在热扰动作用下陷入到陷阱中的电子和空穴的释放并重新结合过程是长余辉发光的根源;Dy3+掺杂到Eu2+激活的铝酸锶发光材料中创造了合适深度的电子陷阱与空穴陷阱,使得这种发光材料具有更强和更长的余辉发光.     

Recombination luminescence of oxygen-deficient centers in silica

The luminescence of silica glass, prepared by plasma chemical vapor deposition (PCVD) and quartz glass of type IV (trade mark KS-4V) methods, were studied while irradiated with pulses of ArF laser (193 nm) light in the range of sample temperatures between 10 and 300 K. The samples contain less than 0.1 ppm metallic and hydroxyl impurities. The samples synthesized by PCVD were of two kinds. The first one (amorphous) was as-deposited from plasma at a substrate tube temperature of ～1200 °C. The second one (fused) was prepared from the first by the tube collapsing with an external burner. In this process, a section of the substrate tube with the deposited glass was installed in a lathe and processed at a temperature of ～2100 °C during ～20 min until the tube was transformed to a rod. After such processing, the rod was cooled down to room temperature in air at an average rate of about 400 °C per min. The only observed luminescence possesses two broad bands, with not well defined position, one at 2.6–2.9 eV (a blue band) and another in the range of 4.4 eV (an UV band). There is a correspondence in luminescence properties between KS-4V silica and fused PCVD silica. Those bands have been attributed to oxygen deficient centers (ODC). No luminescence is observed in amorphous PCVD silica under irradiation with 193 nm laser light. So, formation of the sample by melting at least stimulates formation of ODCs at 193 nm. The blue band decays obeys to power law ～t^?1 and is detected in the range of time 10 ns to 300 μs. The UV band possesses a fast, practically repeating excitation pulse, and a slow component (～30 μs). The obtained new kinetics data are compared with known in literature for lone twofold-coordinated silicon having exponential decay for the blue band equal to 10 ms and 4.5 ns for the UV band. That shows the blue band of new studied samples under ArF laser possesses decay component faster and the UV band slower than that of the twofold-coordinated silicon center. This corresponds to the recombination process of luminescence excitation by laser. We propose a model of the processes as charge separation under excitation with creation of a nearest self-trapped hole and electron trapped on the twofold-coordinated silicon, modified by its surrounding atoms or ions. This pair is recombining then with luminescence.     

双钙钛矿结构Rb3GaF6∶Er3+,Yb3+的合成及上转换发光特性研究

双钙钛矿结构化合物具有化学稳定性高、声子能量低、易于稀土离子掺杂和多种可调变的晶体学格位等优点,是一种优良的上转换发光基质材料。本文采用高温固相法在600℃下合成了双钙钛矿结构Rb₃GaF₆∶Er³⁺,Yb³⁺上转换发光材料,并采用X射线粉末衍射仪(XRD)、场发射扫描电镜(SEM)和荧光光谱仪对其成分、结构和发光特性进行系统表征。在980 nm激发下,制备的样品在521和548/561 nm处产生的绿光发射分别归因于Er³⁺的²H_11/2-⁴I_15/2、⁴S_3/2-⁴I_15/2能级上的电子跃迁,同时在656 nm处产生的红光发射对应于Er³⁺的⁴F_9/2-⁴I_15/2能级上的电子跃迁。此外,本文...     

High-temperature lasing in ZnO microcrystallites

High-temperature studies of the luminescence and lasing spectra parameters of the main UV bands (spontaneous luminescence and lines of stimulated-emission mode structure) and the recombination band of electron-hole plasma in zinc oxide microcrystallites have been performed. ZnO microcrystallites of tetrapod morphology, characterized by type-II lasing (microlasers), have been chosen as objects of study [1]. The temperature behavior of a number of key parameters related to specific features of microlasing is investigated.     

Cs2HfCl6和Cs2HfCl6∶Tl晶体的生长、光学和闪烁性能研究

本文使用坩埚下降法制备了ø7 mm的未掺杂Cs₂HfCl₆与Cs₂HfCl₆∶0.2%Tl(摩尔分数)单晶,对晶体样品进行了物相、杂质含量、光学和闪烁性能的研究。该晶体属于立方晶系,空间群为Fm3m。在荧光和X射线激发下,未掺杂Cs₂HfCl₆晶体的发光主峰皆为380 nm,对应于自陷激子发光。Cs₂HfCl₆∶0.2%Tl晶体在荧光和X射线激发下,发射光谱中除了存在380 nm处的自陷激子发光,也存在505 nm处Tl⁺的sp-s²跃迁发光。Cs₂HfCl₆和Cs₂HfCl₆∶0.2%Tl晶体的光输出分别为37 000 photons/MeV和36 500 photons/MeV,在662 keV处的能量分辨率皆为3.5%。在¹³⁷Cs源激发下,Cs₂HfCl₆晶体的闪烁衰减时间为0.37 μs (4.2%)、4.27 μs (78.9%)和12.52 μs (16.9%),Cs₂HfCl₆∶0.2%Tl晶体的闪烁衰减时间为0.33 μs (3.5%)、4.09 μs (81.9%)和10.42 μs (14.5%)。     

Ce3+激活NaSr4(BO3)3荧光粉的格位占据和发光性质研究

采用高温固相法制备了一系列可被紫外光有效激发的Na_1+xSr_4-2x(BO₃)₃∶xCe³⁺荧光粉,并通过X射线衍射、扫描电镜、荧光光谱等测试方法对样品的物相结构、形貌和发光特性进行了表征及分析。X 射线衍射结果显示,Ce³⁺成功掺入到基质NaSr₄(BO₃)₃中;利用高斯峰拟合、多光谱对比等手段,分析并验证了发光中心Ce³⁺占据了NaSr₄(BO₃)₃中Sr²⁺(1)和Sr²⁺(2)两个格位;研究了不同浓度Ce³⁺的掺杂对发光位置和发光强度的影响,随着Ce³⁺掺杂浓度的提高,发射光谱出现红移,发光强度出现增强→减弱→再增强的趋势;将荧光粉的发射光谱与植物光合色素吸收光谱进行对比,发现它不仅可以吸收300~350 nm的紫外光,发射光谱还很好地覆盖了植物光合色素所需的蓝光区吸收波段,证明其在农业生产的转光剂方面有潜在应用价值。     

γ-ray induced GeODC(II) centers in germanium doped α-quartz crystal

Main luminescence of α-quartz crystal doped with germanium results from the luminescence of a self-trapped exciton (STE) near germanium. In as grown Ge-doped α-quartz crystal, the luminescence associated with the twofold coordinated Ge center (GeODC) in amorphous silica glass doped with germanium, was never observed. In this work, we performed experiments to investigate if a GeODC like luminescence could appear after a γ-irradiation of a Ge-doped α-quartz crystal. The answer is positive: under excitation with pulsed light of an ArF laser (193 nm): a new luminescence with two bands — a blue one associated to a time constant of about 100 μs appears and another one with faster decay of ~ 1.5 ns appears in the ultraviolet part of the spectrum under the same excitation. This last emission has similar characteristics as the GeODC luminescence of silica glass. However, clear differences exist between the radiation-induced center associated with this luminescence and the GeODC. The excitation with a KrF laser does not provide emission with a decay time constant of about 100 μs but provides blue luminescence with a faster decay of about 4 μs. The pulses of the ArF laser also excite this component of decay for the blue band. We attribute this emission to various types of γ-ray created centers in radiation damaged areas of the Ge-doped crystal. Under excitation with an F₂ excimer laser (157 nm), the luminescence of STE near Ge remains in the irradiated sample.     

Characterization of exciton self-trapping in amorphous silica

Triplet electron–hole excitations were introduced into amorphous silica to study self-trapping (localization) and damage formation using density functional theory. Multiple self-trapped exciton (STE) states are found that can be differentiated based on the luminescence energy, the localization and distribution of the excess spin density of the triplet state, and relevant structural data, including the presence or absence of broken bonds. The trapping is shown to be affected by the relaxation response of the silica network, and by comparing results of quartz and amorphous silica systems the effects of the inherent disordered structures on exciton self-trapping are revealed. A key result is that the process of exciton trapping can lead directly to the formation of point defects, without thermal activation. The proposed mechanism includes a non-radiative decay from the excited to the ground state followed by structure relaxation to a defect configuration in the ground state.     

Luminescence of GeO2 glass, rutile-like and α-quartz-like crystals

The luminescence of GeO₂ rutile-like crystals was studied. Crystals were grown from a melt of germanium dioxide and sodium bicarbonate mixture. Luminescence of the crystal was compared with that of sodium germanate glasses produced in reduced and oxidized conditions. A luminescence band at 2.3 eV was observed under N₂ laser (337 nm). At higher excitation photon energies and X-ray excitation an additional band at 3 eV appears in luminescence. The band at 2.3 eV possesses intra-center decay time constant about 100 μs at 290 K and about 200 μs at low temperature. Analogous luminescence was obtained in reduced sodium germanate glasses. No luminescence was observed in oxidized glasses under nitrogen laser, therefore the luminescence of rutile-like crystal and reduced sodium germanate glass was ascribed to oxygen-deficient luminescence center modified by sodium. The band at 2.3 eV could be ascribed to triplet-singlet transition of this center, whereas the band at 3 eV, possessing decay about 0.2 μs, could be ascribed to singlet-singlet transitions. Both bands could be excited in recombination process with decay kinetics determined by traps, when excitation realized by ArF laser or ionizing irradiation with X-ray or electron beam. Another luminescence band at 3.9 eV in GeO₂ rutile-like crystal was obtained under ArF laser in the range 100-15 K. Damaging e-beam irradiation of GeO₂ crystal with α-quartz structure induces similar luminescence band.     

Luminescence studies of defects and piezoelectric fields in InGaN/GaN single quantum wells

Transmission electron microscopy (TEM), cathodoluminescence in the scanning electron microscope (SEM-CL) and photoluminescence (PL) studies were performed on a 30 nm GaN/2 nm In_0.28Ga _0.72N/2 μm GaN/(0 0 0 1) sapphire single quantum well (SQW) sample. SEM-CL was performed at low temperatures ≈8 K, and at an optimum accelerating voltage, around 4–6 kV to maximise the quantum well (QW) luminescence. The CL in the vicinity of characteristic “V-shaped” pits was investigated. The near band edge (BE) luminescence maps from the GaN showed bright rings inside the boundaries of the pits while the QW luminescence maps showed pits to be regions of low intensity. These observations are consistent with TEM observations showing the absence of QW material in the pits. Variations in both the BE and QW maps in the regions between the pits are ascribed to threading edge dislocations. The CL and PL QW luminescence was observed to blue-shift and broaden with increasing excitation intensity. This was accompanied by decreasing spatial resolution in the CL QW maps implying an increasing carrier diffusion length in the InGaN layer. The reasons for this behaviour are discussed. It is argued that screening of the piezoelectric field in the material may account for these observations.     

Cathodoluminescence of SiO2 films

Cathodoluminescence on wet and dry thermal SiO₂ films shows significant time, temperature, and current dependence in the intensities of the observed emission bands at 1.9, 2.7 and 4.3 eV. The low temperature behavior of the 2.7 and 4.3 eV lines suggests a relation between the corresponding luminescence centers. The 1.9 eV line is not found to behave similarly.