掺杂的a-Si1-xCx:H膜的LESR研究

本文系统地研究了77K下掺杂(B或P)的a-Si_1-xC_x:H膜在平衡状态和弱光照下的ESR特性,文中报道了该膜价带尾态中定域化空穴的ESR吸收谱。实验结果还表明:虽然a-Si_1-xC_x:H膜中由于B掺杂会引起光电导的改善,但却不能使悬挂键总浓度减小。 关键词：     

氢化非晶锗碳薄膜中的自旋缺陷态

本文应用原位电子自旋共振(ESR)技术研究了射频反应溅射法制备的氢化非晶锗碳(a-Ge_1-xC_x:H)薄膜中自旋缺陷态的种类、密度、温度依赖关系和热力学动态行为。在分解ESR谱的过程中,发现了它的不对称成分,并对此进行了定量分析和微观机理的探讨。 关键词：     

预注入对Si1-xCx合金形成的影响

室温下在单晶Si中注入(0.6—1.5)at%的C原子,部分样品在C离子注入之前在其中注入²⁹Si⁺离子产生损伤,然后在相同条件下利用高温退火固相外延了Si_1-xC_x合金,研究了预注入对Si_1-xC_x合金形成的影响.如果注入C离子的剂量小于引起Si非晶化的剂量,在950℃退火过程中注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si_1-xC关键词： 离子注入 固相外延 1-xC_x合金')" href="#">Si_1-xC_x合金     

用紫外光电子能谱研究a-Si1-xCx:H的价带特性

用UPS技术获得了GDa-Si_1-xC_x:H合金薄膜的价带谱,分析了掺杂和表面氧化对价带谱的影响,并结合XPS,AES等电子能谱测试手段,对这种材料的价电子分布和键合特性作了初步的研究。 关键词：     

不同剂量C离子注入Si单晶中Si1-xCx合金的形成及其特征

室温下在单晶Si中注入(0.6—1.5)%的C原子,利用高温退火固相外延了Si_1-xC_x合金,研究了不同注入剂量下Si_1-xC_x合金的形成及其特征.如果注入C原子的浓度小于0.6%,在850—950℃退火过程中,C原子容易与注入产生的损伤缺陷结合,难于形成Si_1-xC_x合金相.随注入C原子含量的增加,C原子几乎全部进入晶格位置形成Si_1-xC_{x 关键词： 1-x}C_x合金')" href="#">Si_1-xC_x合金 离子注入 固相外延     

Ge64-xCx合金的能带结构和光学性质的第一性原理计算

基于第一性原理密度泛函理论(DFT),广义梯度近似下的GGA+U方法,计算了Ge_64-xC_x(x=0～3)合金体系的能带结构和光学性质.计算结果显示,纯Ge的带隙宽度数值与实验值相符,为0.732 eV.在本文所研究的C浓度范围内Ge_64-xC_x(x=1～3)均转变成直接带隙,带隙随C原子的增加逐渐减小.光学性质的计算结果表明,C原子引入对所有的光学性质均产生影响,随着C浓度的增加Ge_64-xC_x合金的静态介电常数增大,在近红外区的吸收系数增大,且吸收光谱红移,对于Ge₆₁C₃吸收边延伸至中红外区.C原子掺杂使体系对光的利用率增强,Ge_64-xC_x合金的载流子寿命和光催化能力也随C浓度的变化而变化.Ge_64-xC_x合金有希望成为在近红外、中红外区域的光学材料.     

掺杂聚乙炔中的孤子振动定域模

在SSH模型基础上,本文研究了掺杂聚乙炔链中杂质势对孤子振动模的束缚影响。不同边界条件下的数值计算发现Goldstone模将受到杂质钉扎并出现两个新的定域模g₁′和g₂′。另外,还得到了其它已知的定域模g₂,g₃和g₅,这些定域模随杂质势的敏感程度各有不同,在所取参数下取得了与实验基本一致的结果。 关键词：     

掺杂的a-Si_(1-x)C_x:H膜的LESR研究

本文系统地研究了77K下掺杂(B或P)的a-Si_(1-x)C_x:H膜在平衡状态和弱光照下的ESR 特性,文中报道了该膜价带尾态中定域化空穴的ESR吸收谱。实验结果还表明:虽然a-Si_(1-x)C_x:H膜中由于B掺杂会引起光电导的改善,但却不能使悬挂键总浓度减小。     

孤子振动模的定域性

对于聚乙炔中孤子的五个定域振动模,本文研究了它们的位形随链长的变化而演变的情况,从而可确定其定域性。本文同时考察了开链和闭环两种情况。对于闭链,五个定域模定域于孤子附近,其形状与链长无关。对于开链,定域模g₁,g₂,g₃和g₅的位形不随链长而改变,因而是完全定域的,但是g₄的两翼随链长增加而变宽,定域性不完全。 关键词：     

Mo-SiO2-C3H6催化反应体系的ESR动态表征

文章考察了Mo-SiO₂催化剂体系在丙烯歧化反应过程中的动态ESR波谱,发现在催化歧化反应过程中有两种Mo⁵⁺顺磁中心,一种为扰动八面体配位,g_||=1.89,g_⊥=1.94;另一种为扰动四棱锥配位,g_||=1.86,g_⊥=1.95。测得同位素^95,97Mo⁵⁺的各向异性超精细耦合常数A_||=90.3×10^-4cm^-1,A_⊥=44.8×10^-4cm^-1;观测到反应产生的积炭信号,g≈2.0O₂;氧阴离子自由基信号g₁=2.018,g₂=2.011,g₃=2.005。用LCAO-MO理论对上述Mo⁵⁺的ESR波谱进行计算,求得分子轨道系数,发现并总结出△g_||/△g_⊥与△g成直线关系,并建议用△g_||/△g_⊥=4(△E(B₂→E))/(△E(B₂→B₁)(β₁/ε)²之比值作为衡量C_4v扰动程度的尺度。     

Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique

Hydrogenated amorphous SiC films (a-Si_1−xC_x:H) were prepared by dc magnetron sputtering technique on p-type Si(1 0 0) and corning 9075 substrates at low temperature, by using 32 sprigs of silicon carbide (6H-SiC). The deposited a-Si_1−xC_x:H film was realized under a mixture of argon and hydrogen gases. The a-Si_1−xC_x:H films have been investigated by scanning electronic microscopy equipped with an EDS system (SEM-EDS), X-ray diffraction (XRD), secondary ions mass spectrometry (SIMS), Fourier transform infrared spectroscopy (FTIR), UV-vis-IR spectrophotometry, and photoluminescence (PL). XRD results showed that the deposited film was amorphous with a structure as a-Si_0.80C_0.20:H corresponding to 20 at.% carbon. The photoluminescence response of the samples was observed in the visible range at room temperature with two peaks centred at 463 nm (2.68 eV) and 542 nm (2.29 eV). In addition, the dependence of photoluminescence behaviour on film thickness for a certain carbon composition in hydrogenated amorphous SiC films (a-Si_1−xC_x:H) has been investigated.     

Ellipsometry,FTIR, Raman and X-Ray Spectroscopy Analysis of PECVD a-Si1-xCx:H Film

Hydrogenated amorphous silicon carbide (a-Si_1-xC_x:H) films were deposited by RF plasma enhanced chemical vapor deposition (PECVD) and subsequently annealed in N₂ atmosphere at different temperatures. Systematic investigations of the deposition temperature and annealing effect on the film's properties, including film thicknesses, optical bandgap, refractive indexes, absorption coefficient (α), chemical bond configurations, stoichiometry and crystalline structures, were performed using ellipsometry, FTIR absorbance spectroscopy, Raman spectroscopy, XPS, and XRD. All of the results indicate that the structural and optical properties of the a-Si_1-xC_x:H film can be effectively engineered by proper annealing conditions. Moreover, molecular vibrational level equation was introduced to explain the peak shift detected by FTIR and Raman spectroscopy.     

Elemental depth profiling of a-Si1−xGex:H films by elastic recoil detection analysis and secondary ion mass spectrometry

The hydrogen content in a-Si_1−xGe_x:H thin films is an important factor deciding the density and the optical band gap. We measured the elemental depth profiles of hydrogen together with Si and Ge by elastic recoil detection analysis (ERDA) combined with Rutherford backscattering (RBS) using MeV He²⁺ ions. In order to determine the hydrogen depth profiles precisely, the energy- and angle-dependent recoil cross-sections were measured in advance for the standard sample of a CH₃⁺-implanted Si substrate. The cross-sections obtained here are reproduced well by a simple expression based on the partial wave analysis assuming a square well potential (width: r₀ = 2.67 × 10⁻¹³ cm, depth: V₀ = −36.9 MeV) within 1%. For the a-Si_1−xGe_x:H films whose elemental compositions were determined by ERDA/RBS, we measured the secondary ions yields of HCs₂⁺, SiCs₂⁺, H⁻, Si⁻ and Ge⁻ as a function of Ge concentration x. As a result, it is found that the useful yield ratios of HCs₂⁺/SiCs₂⁺, H⁻/Si⁻ and Ge⁻/Si⁻ are almost constant and thus the elemental depth profiles of the a-Si_1−xGe_x:H films can be also determined by secondary ion mass spectrometry (SIMS) within 10% free from a matrix effect.     

退火对a-SixC1-x:H薄膜带尾态的影响

本文研究了退火后的a-Si_xC_1-x:H薄膜的光致发光光谱,采用发光光谱的峰值能量与测量温度之间的关系判别带尾宽度的大小。实验表明,发光峰值能量随退火温度的升高而移向低能。用指数带尾模型计算了带尾宽度。结果表明,随着退火温度的上升带尾变小。文中对这些结果进行了讨论。 关键词：     

Temperature dependence of photoluminescence in amorphous Si1-xCx:H films

We have investigated the temperature dependence of photoluminescence in hydrogenated amorphous silicon-carbon alloys a-Si_1-xC_x:H prepared by glow discharge in the low-power regime. The radiative recombination process, due to photocarriers trapped on band-edge states, is in competition with the thermal escape of the photocarriers into the mobility bands. The model gives a quantitative fit with experiment, without any adjustable parameter, provided the width of the band-edge distribution of states is taken as the width of the conduction band only (measured by “photo-induced infra-red spectroscopy”) and not as the Urbach energy, as it is usually assumed.     

Effective barriers induced by confined carriers in space charge spectroscopy of Si/Ge quantum wells

Results are presented concerning the characterization of p-Si/Si_1-xGe_x/Si quantum wells (QW) by space charge spectroscopy. Analysis of potential barriers at the QW enables us to determine the valence band offset from such measurements. Admittance spectroscopy data of QWs with 30 nm undoped spacers, acceptor concentration N_A of about 10¹⁷cm^-3 in the cap and buffer layers, x=0.25 and a QW thickness in the range from 1 to 5 nm are in fair agreement with the proposed theoretical model. A decrease of the effective potential barriers due to hole tunneling via shallow acceptor states in the barrier is experimentally confirmed for 5 nm QW structures without spacers.     

生长在GexSi1-x(001)衬底上应变GaAs层的价电子能带结构与光学性质

采用紧束缚方法对生长在Ge_xSi_1-x(001)衬底上的应变ＧａＡｓ层的价电子能带结构和空穴的三次非线性光学极化率x⁽³⁾进行了计算结果表明，由于应变的存在，使ＧａＡｓ层的空穴有效质量和价带态密度变小，而使偏振方向在（００１）面内的三次非线性光学极化率x_xxxx⁽³⁾变大． 关键词：     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)