Layer and size dependence of thermal conductivity in multilayer graphene nanoribbons

Using nonequilibrium molecular dynamics method (NEMD), we have found that the thermal conductivity of multilayer graphene nanoribbons monotonously decreases with the increase of the number of layers which can be attributed to the phonon resonance effect of out-of-plane phonon modes. The reduction of thermal conductivity is proportional to the layer size, which is caused by the increase of phonon resonance. The results clearly show the dimensional evolution of thermal conductivity from quasi-one dimension to higher dimensions in graphene nanoribbons.     

Molecular Dynamics Studies on Ballistic Thermal Resistance of Graphene Nano-Junctions

Ballistic thermal resistance of graphene nano-junctions is investigated using non-equilibrium molecular dynamics simulation. The simulation system is consisted of two symmetrical trapezoidal or rectangular graphene nanoribbons(GNRs) and a connecting nanoscale constriction in between. From the simulated temperature profile, a big temperature jump resulted from the constriction is found, which is proportional to the heat current and corresponds to a local ballistic thermal resistance. Fixing the constriction width and the length of GNRs, this ballistic thermal resistance is independent of the width of the GNRs bottom layer, i.e., the convex angle. But interestingly, this thermal resistance has obvious size effect. It is inversely proportional to the constriction width and will disappear with the constriction being wider. Moreover, based on the phonon dynamics theory, a theoretical model of the ballistic thermal resistance in two-dimensional nano-systems is developed, which gives a good explanation on microcosmic level and agrees well with the simulation result quantitatively and qualitatively.     

铜表面抗氧化性能与其覆盖石墨烯的层数依赖关系研究

We studied the oxidation resistance of graphene-coated Cu surface and its layer dependence by directly growing monolayer graphene with different multilayer structures coexisted, di-minishing the influence induced by residue and transfer technology. It is found that the Cu surface coated with the monolayer graphene demonstrate tremendous difference in oxidation pattern and oxidation rate, compared to that coated with the bilayer graphene, which is considered to be originated from the strain-induced linear oxidation channel in monolayer graphene and the intersection of easily-oxidized directions in each layer of bilayer graphene, respectively. We reveal that the defects on the graphene basal plane but not the boundaries are the main oxidation channel for Cu surface under graphene protection. Our finding indi-cates that compared to putting forth efforts to improve the quality of monolayer graphene by reducing defects, depositing multilayer graphene directly on metal is a simple and effective way to enhance the oxidation resistance of graphene-coated metals.     

Enhancing thermal transport in multilayer structures: A molecular dynamics study on Lennard−Jones solids

We investigate the thermal transport properties of three kinds of multilayer structures: a perfect superlattice (SL) structure, a quasi-periodic multilayer structure consisted of two superlattice (2SL) structures with different periods, and a random multilayer (RML) structure. Our simulation results show that there exists a large number of aperiodic multilayer structures that have effective thermal conductivity higher than that of the SL counterpart, showing enhancement ratio in the effective thermal conductivity up to 193%. Surprisingly, some RML structures also exhibit enhanced thermal transport than the SL counterpart even in the presence of phonon localization. The detailed analysis on the underlying mechanism reveals that such peculiar enhancement is caused by the synergistic effect of coherent and incoherent phonon transport, which can be tuned by the structural configuration. Combined with molecular dynamics simulations and the machine learning technique, we further reveal that the enhancement effect of the effective thermal conductivity by 2SL structure is more significant when the period of SL structure is close to the critical transition period between the coherent and incoherent phonon transport regimes. Our study proposes a novel strategy to enhance the thermal transport in multilayer structures by regulating the wave-particle duality of phonons via the structure optimization, which might provide valuable insights to the thermal management in devices with densely packed interfaces.     

Thermal properties of transition-metal dichalcogenide

Beyond graphene, the layered transition metal dichalcogenides(TMDs) have gained considerable attention due to their unique properties. Herein, we review the lattice dynamic and thermal properties of monolayer TMDs, including their phonon dispersion, relaxation time, mean free path(MFP), and thermal conductivities. In particular, the experimental and theoretical studies reveal that the TMDs have relatively low thermal conductivities due to the short phonon group velocity and MFP, which poses a significant challenge for efficient thermal management of TMDs-based devices. Importantly,recent studies have shown that this issue could be largely addressed by connecting TMDs and other materials(such as metal electrode and graphene) with chemical bonds, and a relatively high interfacial thermal conductance(ITC) could be achieved at the covalent bonded interface. The ITC of MoS_2/Au interface with chemical edge contact is more than 10 times higher than that with physical side contact. In this article, we review recent advances in the study of TMD-related ITC.The effects of temperature, interfacial vacancy, contact orientation, and phonon modes on the edge-contacted interface are briefly discussed.     

Thermal transport in semiconductor nanostructures,graphene,and related two-dimensional materials

We review experimental and theoretical results on thermal transport in semiconductor nanostructures(multilayer thin films, core/shell and segmented nanowires), single-and few-layer graphene, hexagonal boron nitride, molybdenum disulfide, and black phosphorus. Different possibilities of phonon engineering for optimization of electrical and heat conductions are discussed. The role of the phonon energy spectra modification on the thermal conductivity in semiconductor nanostructures is revealed. The dependence of thermal conductivity in graphene and related two-dimensional(2 D) materials on temperature, flake size, defect concentration, edge roughness, and strain is analyzed.     

利用同位素掺杂与分形结构调控石墨烯热导率

本研究采用非平衡分子动力学方法对用Rectangle Carpet(RC)和Sierpinski Carpet(SC)分形结构布局的同位素掺杂石墨烯的热导率进行系统研究。研究表明,RC和SC结构的热导率均随分形数(m)的增加先减小后略微升高,且SC结构的热导率要低于RC结构的热导率。同时,我们通过计算声子谱、声子群速度、声子参与比和声子态密度来分析原始石墨烯、m=3的RC结构(RC3)和m=3的SC结构(SC3)结构中的声子行为。在全声子频率区域内,原始石墨烯、RC3和SC3结构的平均声子群速度和平均声子参与比分别为3.47 km·s^-1,0.98;2.77 km·s^-1,0.62和2.34km·s^-1,0.61。结果显示,与原始结构和RC结构相比,SC结构中有更多的声子模被局域化,导致更低的声子群速度和较强的声子散射,进而可以抑制声子的热输运。     

光抽运多层石墨烯太赫兹表面等离子体增益特性的研究

本文建立了光抽运多层石墨烯表面等离子体模型,计算了光抽运多层石墨烯等离子体传播系数的实部和吸收系数,讨论了动量弛豫时间、温度、层数、准费米能级对表面等离子体传播系数的实部和吸收系数的影响.研究结果表明,光抽运多层石墨烯使其动态电导率的实部在太赫兹频段内出现负值时,石墨烯表面等离子体实现增益.通过光抽运剥离层石墨烯和含有底层石墨烯结构表面等离子体传播系数和吸收系数比较,表明光抽运剥离层石墨烯能更有效地实现表面等离子体的增益.同时,在低温下,光抽运具有合适层数的石墨烯比光抽运单层石墨烯能获得更大的表面等离子体增益.     

Vacuum phonon tunneling

Field-induced phonon tunneling, a previously unknown mechanism of interfacial thermal transport, has been revealed by ultrahigh vacuum inelastic scanning tunneling microscopy (STM). Using thermally broadened Fermi-Dirac distribution in the STM tip as in situ atomic-scale thermometer we found that thermal vibrations of the last tip atom are effectively transmitted to sample surface despite few angstroms wide vacuum gap. We show that phonon tunneling is driven by interfacial electric field and thermally vibrating image charges, and its rate is enhanced by surface electron-phonon interaction.     

Temperature and layer number dependence of the G and 2D phonon energy and damping in graphene

We have studied the temperature and size dependence of the G and 2D phonon modes in graphene. It is shown that in a graphene monolayer the phonon energy decreases whereas the phonon damping increases with increasing temperature. The electron-phonon interaction leads to hardening whereas the fourth-order anharmonic phonon-phonon processes lead to softening of the phonon energy with increasing temperature. We have shown that the electron-phonon interaction plays an important role also by the dispersion dependence of the phonon G mode, by the observation of the Kohn anomaly. The G mode frequency decreases and damping increases, whereas the 2D phonon frequency and damping increase with increasing layer number. The temperature and size effects of the 2D mode are much stronger than those of the G mode.     

多空穴错位分布对石墨纳米带中热输运的影响

利用非平衡格林函数方法研究了石墨纳米带中三空穴错位分布对热输运性质的影响.研究结果发现:三空穴竖直并排结构对低频声子的散射较小,导致低温区域三空穴竖直并排时热导最大,而在高频区域,三空穴竖直并排结构对高频声子的散射较大,导致较高温度区域三空穴竖直并排时热导最小;三空穴的相对错位分布仅能较大幅度地调节面内声学模高频声子的透射概率,而三空穴的相对错位分布能较大幅度地调节垂直振动膜高频声子和低频声子的透射概率,导致三空穴的相对错位分布不仅能大幅调节面内声学模和垂直振动模的高温热导,也能大幅调节垂直振动模的低温热导.研究结果阐明了空穴位置不同的石墨纳米带的热导特性,为设计基于石墨纳米带的热输运量子器件提供了有效的理论依据.     

Two-dimensional phonon transport in graphene

Properties of phonons-quanta of the crystal lattice vibrations-in graphene have recently attracted significant attention from the physics and engineering communities. Acoustic phonons are the main heat carriers in graphene near room temperature, while optical phonons are used for counting the number of atomic planes in Raman experiments with few-layer graphene. It was shown both theoretically and experimentally that transport properties of phonons, i.e. energy dispersion and scattering rates, are substantially different in a quasi-two-dimensional system such as graphene compared to the basal planes in graphite or three-dimensional bulk crystals. The unique nature of two-dimensional phonon transport translates into unusual heat conduction in graphene and related materials. In this review, we outline different theoretical approaches developed for phonon transport in graphene, discuss contributions of the in-plane and cross-plane phonon modes, and provide comparison with available experimental thermal conductivity data. Particular attention is given to analysis of recent results for the phonon thermal conductivity of single-layer graphene and few-layer graphene, and the effects of the strain, defects, and isotopes on phonon transport in these systems.     

硅功能化石墨烯热导率的分子动力学模拟

采用Tersoff势函数与Lennard-Jones势函数,结合速度形式的Verlet算法和Fourier定律,对单层和两层硅功能化石墨烯沿长度方向的导热性能进行了正向非平衡态分子动力学模拟.通过模拟发现,硅原子的加入改变了石墨烯声子的模式、平均自由程和移动速度,使得单层硅功能化石墨烯模型的热导率随着硅原子数目的增加而急剧地减小.在300 K至1000 K温度变化范围内,单层硅功能化石墨烯的热导率呈下降趋势,具有明显的温度效应.对双层硅功能化石墨烯而言,少量的硅原子嵌入,起到了提高热导率的作用,但当硅原子数目达到一定数量后,材料的导热性能下降.     

Optical conductivity of multilayer graphene

The optical conductivity of graphene monolayer and multilayers are theoretically studied taking into account of the full dispersion, yielding results that are valid up to the ultraviolet region. Compared to the optical conductivity of monolayer graphene, extra peak structures appear in both the infrared and ultraviolet frequency regions for the multilayer case, which is understood as a combined effect of van Hove singularities in the energy band structures and optical transition selection rules. The number of ultraviolet peaks is equal to the number of layers. The number of infrared peaks in an even-layered graphene is equal to one half of the layer number. In odd-layered graphene, due to the existence of a monolayer-like subband, the number of infrared peaks is equal to that in the corresponding even-layered graphene with one layer less.     

Thermal properties of graphene and multilayer graphene: Applications in thermal interface materials

We review the thermal properties of graphene and multilayer graphene, and discuss graphene’s applications in thermal management of advanced electronics and optoelectronics. A special attention is paid to the use of the liquid-phase-exfoliated graphene and multilayer graphene as the fillers in the thermal interface materials. It has been demonstrated that addition of an optimized mixture of graphene and multilayer graphene to the composites with different matrix materials produces the record-high enhancement of the effective thermal conductivity at the small filler loading fraction (f≤10 vol%). The thermal conductivity enhancement due to the presence of graphene in the composites has been observed for a range of matrix materials used by industry. The hybrid composites where graphene is utilized together with metallic micro- and nanoparticles allow one to tune both the thermal and electrical conductivity of these materials. Theoretical considerations indicate that the graphene-based thermal interface materials can outperform those with carbon nanotubes, metal nanoparticles and other fillers owing to graphene’s geometry, mechanical flexibility and lower Kapitza resistance at the graphene–base material interface.     

Thermal transport in twisted few-layer graphene

Twisted graphene possesses unique electronic properties and applications, which have been studied extensively. Recently, the phonon properties of twisted graphene have received a great deal of attention. To the best of our knowledge,thermal transports in twisted graphene have been investigated little to date. Here, we study perpendicular and parallel transports in twisted few-layer graphene(T-FLG). It is found that perpendicular and parallel transports are both sensitive to the rotation angle θ between layers. When θ increases from 0° to 60°, perpendicular thermal conductivity κ_(||) first decreases and then increases, and the transition angle is θ = 30°. For the parallel transport, the relation between thermal conductivity κand θ is complicated, because intra-layer thermal transport is more sensitive to the edge of layer than their stacking forms. However, the dependence of interlayer scattering on θ is similar to that of κ⊥. In addition, the effect of layer number on the thermal transport is discussed. Our results may provide references for designing the devices of thermal insulation and thermal management based on graphene.     

Phonon thermal conductance of disordered graphene strips with armchair edges

Based on the model of lattice dynamics together with the transfer matrix technique, we investigate the thermal conductances of phonons in quasi-one-dimensional disordered graphene strips with armchair edges using Landauer formalism for thermal transport. It is found that the contributions to thermal conductance from the phonon transport near von Hove singularities is significantly suppressed by the presence of disorder, on the contrary to the effect of disorder on phonon modes in other frequency regions. Besides the magnitude, for different widths of the strips, the thermal conductance also shows different temperature dependence. At low temperatures, the thermal conductance displays quantized features of both pure and disordered graphene strips implying that the transmission of phonon modes at low frequencies are almost unaffected by the disorder.     

Ultrafast relaxation of hot optical phonons in monolayer and multilayer graphene on different substrates

Hot carrier cooling in few-layer and multilayer epitaxial graphene on SiC, and chemical vapor deposition (CVD) grown graphene transferred onto a glass substrate was investigated by transient absorption spectroscopy and imaging. Coupling to the substrate was found to play a critical role in charge carrier cooling. For both multilayer epitaxial graphene and monolayer CVD graphene, charge carriers transfer heat predominantly to intrinsic in-plane optical phonons of graphene. At high pump intensity, a significant number of optical phonons are accumulated, and the optical phonon lifetime presents a bottleneck for charge carrier cooling. This hot phonon effect did not occur in few-layer epitaxial graphene because of strong coupling to the substrate, which provided additional cooling channels. The limiting charge carrier lifetimes at high excitation densities were 1.8 ± 0.1 ps and 1.4 ± 0.1 ps for multilayer epitaxial graphene and monolayer CVD graphene, respectively. These values represent lower limits on the optical phonon lifetime for the graphene samples.     

Unexpected large thermal rectification in asymmetric grain boundary of graphene

We have investigated the lattice thermal transport across the asymmetric tilt grain boundary between armchair and zigzag graphene by nonequilibrium molecular dynamics (NEMD). We have observed significant temperature drop and ultra-low temperature-dependent thermal boundary resistance. More importantly, we find an unexpected thermal rectification phenomenon. The thermal conductivity and Kapitza conductance is direction-dependent. The effect of thermal rectification could be amplified by increasing the difference of temperature imposed on two sides. Our results propose a promising kind of thermal rectifier and phonon diodes based on polycrystalline graphene without delicate manipulation of the atomic structure.     

Thermal transport in graphene

The recent advances in graphene isolation and synthesis methods have enabled potential applications of graphene in nanoelectronics and thermal management, and have offered a unique opportunity for investigation of phonon transport in two-dimensional materials. In this review, current understanding of phonon transport in graphene is discussed along with associated experimental and theoretical investigation techniques. Several theories and experiments have suggested that the absence of interlayer phonon scattering in suspended monolayer graphene can result in higher intrinsic basal plane thermal conductivity than that for graphite. However, accurate experimental thermal conductivity data of clean suspended graphene at different temperatures are still lacking. It is now known that contact of graphene with an amorphous solid or organic matrix can suppress phonon transport in graphene, although further efforts are needed to better quantify the relative roles of interface roughness scattering and phonon leakage across the interface and to examine the effects of other support materials. Moreover, opportunities remain to verify competing theories regarding mode specific scattering mechanisms and contributions to the total thermal conductivity of suspended and supported graphene, especially regarding the contribution from the flexural phonons. Several measurements have yielded consistent interface thermal conductance values between graphene and different dielectrics and metals. A challenge has remained in establishing a comprehensive theoretical model of coupled phonon and electron transport across the highly anisotropic and dissimilar interface.