Structural,elastic, electronic and optical properties of the newly synthesized monoclinic Zintl phase BaIn2P2

The present study explores the structural, elastic, electronic and optical properties of the newly synthesized monoclinic Zintl phase BaIn₂P₂ using a pseudopotential plane-wave method in the framework of density functional theory within the generalized gradient approximation. The calculated lattice constants and internal coordinates are in very good agreement with the experimental findings. Independent single-crystal elastic constants as well as numerical estimations of the bulk modulus, the shear modulus, Young's modulus, Poisson's ratio, Pugh's indicator of brittle/ductile behaviour and the Debye temperature for the corresponding polycrystalline phase were obtained. The elastic anisotropy of BaIn₂P₂ was investigated using three different indexes. The calculated electronic band structure and the total and site-projected l-decomposed densities of states reveal that this compound is a direct narrow-band-gap semiconductor. Under the influence of hydrostatic pressure, the direct D–D band gap transforms into an indirect B-D band gap at 4.08 GPa, then into a B–Γ band gap at 10.56 GPa. Optical macroscopic constants, namely, the dielectric function, refractive index, extinction coefficient, reflectivity coefficient, absorption coefficient and energy-loss function, for polarized incident radiation along the [100], [010] and [001] directions were investigated.     

Full potential study of the elastic, electronic, and optical properties of spinels MgIn2S4 and CdIn2S4 under pressure effect

The structural, elastic, electronic, and optical properties of cubic spinel MgIn₂S₄ and CdIn₂S₄ compounds have been calculated using a full relativistic version of the full-potential linearized-augmented plane wave with the mixed basis FP/APW+lo method. The exchange and correlation potential is treated by the generalized-gradient approximation (GGA). Moreover, the Engel-Vosko GGA formalism is also applied to optimize the corresponding potential for band structure calculations. The ground state properties, including the lattice constants, the internal parameter, the bulk modulus, and the pressure derivative of the bulk modulus are in reasonable agreement with the available data. Using the total energy-strain technique, we have determined the full set of first-order elastic constants C_ij and their pressure dependence, which have not been calculated or measured yet. The shear modulus, Young’s modulus, and Poisson’s ratio are calculated for polycrystalline XIn₂S₄ aggregates. The Debye temperature is estimated from the average sound velocity. Electronic band structures show a direct band gap (Г-Г) for MgIn₂S₄ and an indirect band gap (K-Г) for CdIn₂S₄. The calculated band gaps with EVGGA show a significant improvement over the GGA. The optical constants, including the dielectric function ε(ω), the refractive index n(ω), the reflectivity R(ω), and the energy loss function L(ω) were calculated for radiation up to 30 eV.     

Synthesis, crystal structure and optical properties of an indium phosphate K3In3P4O16

An alkali-metal indium phosphate crystal, K₃In₃P₄O₁₆, has been synthesized by a high-temperature solution reaction and exhibits a new structure in the family of the alkali-metal indium phosphates system. Single-crystal X-ray diffraction analysis shows the structure to be monoclinic with space group P2₁/n, and the following cell parameters: a=9.7003(18), b=9.8065(18), c=15.855(3) Å, β=90.346(3)°, V=1508.2(5) Å³, Z=4, R=0.0254. It possesses three-dimensional anionic frameworks with tunnels occupied by K⁺ cations running along the a-axis. The emission and absorption spectra of the compound have been investigated. Additionally, the calculations of energy band structure, density of states, dielectric constants and refractive indexes have been performed with the density functional theory method. Also, the two-photon absorption spectrum is simulated by two-band model. The obtained results tend to support the experimental data.     

Structural,mechanical, electronic,optical properties and effective masses of CuMO2 (M = Sc,Y, La) compounds: First-principles calculations

The structural, elastic, mechanical, electronic, optical properties and effective masses of CuM_IIIBO₂ (M_IIIB = Sc, Y, La) compounds have been investigated by the plane-wave ultrasoft pseudopotential technique based on the first-principles density-functional theory under local density approximation. The equilibrium structural parameters are in good agreement with previous experimental and theoretical data. To our knowledge, there are no available data of elastic constants for comparison. The bulk, shear and Young's modulus, ratio of B/G, Poisson's ratio and Lamé's constants of CuM_IIIBO₂ have been studied. The electronic structures of CuM_IIIBO₂ are consistent with other calculations. The population analysis, charge densities and effective masses have been shown and analyzed. The imaginary and real parts of the dielectric function, refractive index and extinction coefficient of CuM_IIIBO₂ are calculated. The interband transitions to absorption of CuM_IIIBO₂ have been analyzed.     

Synthesis, band structure, and optical properties of Ba2ZnV2O8

A novel compound Ba₂ZnV₂O₈ has been synthesized in high temperature solution reaction and its crystal structure has been characterized by means of single crystal X-ray diffraction analysis. It crystallizes in monoclinic system and belongs to space group P2₁/c with a=7.9050(16), b=16.149(3), , β=90.49(3). It builds up from 1-D branchy chains of [ZnV₂O₈⁴⁻]_∞, and the Ba²⁺ cations are located in the space among these chains. The IR spectrum, ultraviolet-visible diffuse reflection integral spectrum and fluorescent spectra of this compound have been investigated. The calculated results of energy band structure by the density functional theory method show that the solid-state compound of Ba₂ZnV₂O₈ is an insulator with direct band gap of 3.48 eV. The calculated total and partial density of states indicate that the top valence bands are contributions from the mixings of O-2p, V-3d, and Zn-3d states and low conduction bands mostly originate from unoccupied antibonding states between the V-3d and O-2p states. The V-O bonds are mostly covalence characters and Zn-O bonds are mostly ionic interactions, and the ionic interaction strength is stronger between the Ba-O than between the Zn-O. The refractive index of n_x, n_y, and n_z is estimated to be 1.7453, 1.7469, and 1.7126, respectively, at wavelength of 1060 nm for Ba₂ZnV₂O₈ crystal.     

Synthesis, crystal and band structures, and optical properties of a new lanthanide-alkaline earth tellurium(IV) oxide: La2Ba(Te3O8)(TeO3)2

A new quaternary lanthanide alkaline-earth tellurium(IV) oxide, La₂Ba(Te₃O₈)(TeO₃)₂, has been prepared by the solid-state reaction and structurally characterized. The compound crystallizes in monoclinic space group C2/c with a=19.119(3), b=5.9923(5), c=13.2970(19) Å, β=107.646(8)°, V=1451.7(3) Å³ and Z=4. La₂Ba(Te₃O₈)(TeO₃)₂ features a 3D network structure in which the cationic [La₂Ba(TeO₃)₂]⁴⁺ layers are cross-linked by Te₃O₈⁴⁻ anions. Both band structure calculation by the DFT method and optical diffuse reflectance spectrum measurements indicate that La₂Ba(Te₃O₈)(TeO₃)₂ is a wide band-gap semiconductor.     

Synthesis, crystal and band structures, and optical properties of a new supramolecular complex: [Hg6Sb4](InBr6)Br

A new supramolecular complex [Hg₆Sb₄](InBr₆)Br (1) has been prepared by the solid-state reaction of HgBr₂ with elemental In and Sb at 450 °C. The crystal structure of 1 features a three-dimensional [Hg₆Sb₄]⁴⁺ framework with cavities of two different sizes occupied by different kinds of guest anions. The bigger cavities are filled with the octahedral InBr₆³⁻ ions, while the smaller cavities trap Br⁻ ions. The optical properties were investigated in terms of the diffuse reflectance and infrared spectra. The electronic band structure along with density of states (DOS) calculated by DFT method indicates that the present compound is semiconductor, and the optical absorption is mainly originated from the charge transitions from Sb-5p and Br-4p to In-5s and Hg-6s states.     

Synthesis, crystal and band structures, and properties of a new supramolecular complex (Hg2As)2(CdI4)

A new quaternary supramolecular complex (Hg₂As)₂ (CdI₄) (1) has been prepared by the solid-state reaction and structurally characterized by single crystal X-ray diffraction analysis. Compound 1 crystallizes in the space group P2₁ of the monoclinic system with two formula units in a cell: a=7.945(4), b=12.934(6), c=8.094(4) Å, β=116.898°(1), V=741.7(6) Å³. The structure of 1 is characterized by a tridymite-like three-dimensional cationic framework, which is composed of mercury and arsenic atoms, with the channels being occupied by discrete CdI₄²⁻ tetrahedral guest-anions. The optical properties were investigated in terms of the diffuse reflectance and Fourier transform infrared spectra. The electronic band structure along with density of states (DOS) calculated by DFT method indicates that the present compound is a semiconductor with a direct band gap, and that the optical absorption is mainly originated from the charge transitions from I-5p and As-4p to Cd-5s and Hg-6s states.     

Syntheses, crystal structures and optical properties of the first strontium selenium(IV) and tellurium(IV) oxychlorides: Sr3(SeO3)(Se2O5)Cl2 and Sr4(Te3O8)Cl4

Two new quaternary strontium selenium(IV) and tellurium(IV) oxychlorides, namely, Sr₃(SeO₃)(Se₂O₅)Cl₂ and Sr₄(Te₃O₈)Cl₄, have been prepared by solid-state reaction. Sr₃(SeO₃)(Se₂O₅)Cl₂ features a three-dimensional (3D) network structure constructed from strontium(II) interconnected by Cl⁻, SeO₃²⁻ as well as Se₂O₅²⁻ anions. The structure of Sr₄(Te₃O₈)Cl₄ features a 3D network in which the strontium tellurium oxide slabs are interconnected by bridging Cl⁻ anions. The diffuse reflectance spectrum measurements and results of the electronic band structure calculations indicate that both compounds are wide band-gap semiconductors.     

Structural, optoelectronic, infrared and Raman spectra of orthorhombic SrSnO3 from DFT calculations

Orthorhombic SrSnO₃ was investigated using density functional theory (DFT) considering both the local density and generalized gradient approximations, LDA and GGA, respectively. The electronic band structure, density of states, complex dielectric function, optical absorption, and the infrared and Raman spectra were computed. Calculated lattice parameters are close to the experimental measurements, and an indirect band gap (2.27 eV) was obtained within the GGA (LDA) level of calculation. Effective masses for holes and electrons were estimated, being very anisotropic in comparison with similar results for orthorhombic CaSnO₃. The complex dielectric function and the optical absorption of SrSnO₃ were shown to be sensitive to the plane of polarization of the incident light. The infrared spectrum between 100 and 600 cm⁻¹ was obtained, with its main peaks being assigned, and a nice agreement between experimental and theoretical peaks of the Raman spectrum of orthorhombic SrSnO₃ was achieved.     

Transport and optical properties of heavily hole-doped semiconductors BaCu2Se2 and BaCu2Te2

Experimental and theoretical studies of the electronic and optical properties of orthorhombic BaCu₂Se₂ and BaCu₂Te₂ are reported. Experimental data include the electrical resistivity, Hall coefficient, Seebeck coefficient, thermal conductivity, and lattice constants for , and optical transmission and diffuse reflectance data at room temperature. Nominally stoichiometric, polycrystalline samples form with hole concentrations inferred from Hall measurements of 2×10¹⁸ and 5×10¹⁹ cm⁻³ near room temperature for the selenide and telluride, respectively. The corresponding mobilities are near 15 cm² V⁻¹ s⁻¹ for both materials. Optical measurements reveal a transition near 1.8 eV in BaCu₂Se₂, while no similar feature was observed for BaCu₂Te₂. First principles calculations indicate both materials are direct or nearly direct gap semiconductors with calculated gaps near 1.0 eV and 1.3 eV for the telluride and selenide, respectively, and predict weak absorption below about 2 eV. Transport properties calculated from the electronic structure are also presented.     

Structure, energy band, and optical properties of NaLa(PO3)4 crystal

An alkali metal-rare earth phosphate crystal of NaLa(PO₃)₄ has been synthesized by high temperature solid-state reactions and structurally characterized by single crystal X-ray diffraction analysis, for the first time. It crystallizes in the monoclinic P2₁/n space group with lattice parameters: a=7.2655(3), b=13.1952(5), , β=90.382°(1), , Z=4. It is composed of LaO₈ polyhedra and [(PO₃)₄]⁴⁻ chains sharing oxygen atoms to form a three-dimensional framework, delimiting intersecting tunnels in which the sodium ions are located. The IR spectrum, absorption spectrum, and emission spectrum of the compound have been investigated. The absorption edge is located at 340 nm (3.60 eV). The calculated total and partial densities of states indicate that the top of valence bands is mainly built upon O-2p states which interact with P-3p states via σ (P-O) interactions, and the low conduction bands mostly originates from unoccupied La-5d states. The P-O bond is mostly covalent in character, and the ionic character of the Na-O bond is larger than that in the La-O bond.     

Syntheses, structures, optical properties, and theoretical calculations of Cs2Bi2ZnS5, Cs2Bi2CdS5, and Cs2Bi2MnS5

Three new compounds, Cs₂Bi₂ZnS₅, Cs₂Bi₂CdS₅, and Cs₂Bi₂MnS₅, have been synthesized from the respective elements and a reactive flux Cs₂S₃ at 973 K. The compounds are isostructural and crystallize in a new structure type in space group Pnma of the orthorhombic system with four formula units in cells of dimensions at 153 K of a=15.763(3), b=4.0965(9), c=18.197(4) Å, V=1175.0(4) Å³ for Cs₂Bi₂ZnS₅; a=15.817(2), b=4.1782(6), c=18.473(3)  Å, V=1220.8(3)  ų for Cs₂Bi₂CdS₅; and a=15.830(2), b=4.1515(5), c=18.372(2) Å, V=1207.4(2) Å³ for Cs₂Bi₂MnS₅. The structure is composed of two-dimensional _∞²[Bi₂MS₅²⁻] (M=Zn, Cd, Mn) layers that stack perpendicular to the [100] axis and are separated by Cs⁺ cations. The layers consist of edge-sharing _∞¹[Bi₂S₆⁶⁻] and _∞¹[MS₃⁴⁻] chains built from BiS₆ octahedral and MS₄ tetrahedral units. Two crystallographically unique Cs atoms are coordinated to S atoms in octahedral and monocapped trigonal prismatic environments. The structure of Cs₂Bi₂MS₅, is related to that of Na₂ZrCu₂S₄ and those of the AMM′Q₃ materials (A=alkali metal, M=rare-earth or Group 4 element, M′= Group 11 or 12 element, Q=chalcogen). First-principles theoretical calculations indicate that Cs₂Bi₂ZnS₅ and Cs₂Bi₂CdS₅ are semiconductors with indirect band gaps of 1.85 and 1.75 eV, respectively. The experimental band gap for Cs₂Bi₂CdS₅ is ≈1.7 eV, as derived from its optical absorption spectrum.     

Electronic structures and optical properties of wurtzite type LiBSe2 (B=Al, Ga, In): A first-principles study

The electronic structures of three wurtzite type isostructural compounds LiBSe₂ (B=Al, Ga, In) are studied by the density functional theory (DFT). The results reveal that the presence of Li cations has direct influence on neither the band gaps (Eg) nor the bonding levels, but plays an important role in the stabilization of the structures. The band structures and densities of states (DOS) are analyzed in detail, and the band gaps of LiBSe₂ adhere to the following trend Eg_(LiAlSe2)>Eg_(LiGaSe2)>Eg_(LiInSe2), which is in agreement with the decrease of the bond energy of the corresponding Se 4p-B s antibonding orbitals. The role of the active s electrons of B element on the band gaps is also discussed. Finally, the optical properties are predicted, and the results would be a guide to understand the experiments.     

Synthesis, crystal structure and optical properties of BiMgVO5

The new vanadate BiMgVO₅ has been prepared and its structure has been determined by single crystal X-ray diffraction: space group P2₁/n, , , , β=107.38(5)°, wR₂=0.0447, R=0.0255. The structure consists of [Mg₂O₁₀] and [Bi₂O₁₀] dimers sharing their corners with [VO₄] tetrahedra. The ranges of bond lengths are 2.129-2.814 Å for Bi-O; 2.035-2.167 Å for Mg-O and 1.684-1.745 Å for V-O. V-O bond lengths determined from Raman band wavenumbers are between 1.679 and 1.747 Å. An emission band overlapping the entire visible region with a maximum around 650 nm is observed.     

A sodium gadolinium phosphate with two different types of tunnel structure: Synthesis, crystal structure, and optical properties of Na3GdP2O8

A sodium gadolinium phosphate crystal, Na₃GdP₂O₈, has been synthesized by a high-temperature solution reaction, and it exhibits a new structural family of the alkali-metal-rare-earth phosphate system. Although many compounds with formula M₃LnP₂O₈ have been reported, but they were shown to be orthorhombic [R. Salmon, C. Parent, M. Vlasse, G. LeFlem, Mater. Res. Bull. 13 (1978) 439] rather than monoclinic as shown in this paper. Single-crystal X-ray diffraction analysis shows the structure to be monoclinic with space group C2/c and the cell parameters: a=27.55 (25), b=5.312 (4), c=13.935(11) Å, β=91.30(1)°, and V=2038.80 Å³, Z=4. Its structure features a three-dimensional GdP₂O₈³⁻ anionic framework with two different types of interesting tunnels at where Na atoms are located by different manners. The framework is constructed by Gd polyhedra and isolated PO₄ tetrahedra. It is different from the structure of K₃NdP₂O₈ [R. Salmon, C. Parent, M. Vlasse, G. LeFlem, Mater. Res. Bull. 13 (1978) 439] with space group P2₁/m that shows only one type of tunnel. The emission spectrum and the absorption spectrum of the compound have been investigated. Additionally, the calculations of band structure, density of states, dielectric constants, and refractive indexes have been also performed with the density functional theory method. The obtained results tend to support the experimental data.     

Structural, dielectric and thermal properties of TlH2AsO4

Structural (at room temperature) and dielectric and thermal properties of TlH²AsO₄ have been studied as functions of temperature to understand the existence of its reported phase transition. The space group and cell parameters of the compound were determined. The crystal structure was determined by Patterson and Fourier difference methods and refined by the full-matrix least-squares technique. The structure can be explained in terms of zig-zag chains of H-bonds running along thec-axis. Careful studies on dielectric and thermal properties of the substance do not suggest any ferroelectric phase transitions in it.     

Cu掺杂MgF2晶体的电子结构及光学特性

基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算了纯的MgF2晶体和掺杂不同原子分数(2.08%,4.16%,6.24%)Cu的MgF2晶体结构、电学性质以及光学性质.结果表明:Cu的掺入导致MgF2晶体禁带宽度逐渐变窄,并且Cu掺杂使得MgF2晶体折射率和吸收峰增加,特别是在4eV附近区域出现了新吸收峰.同时也给出了引起体系性质变化的物理机制,Cu掺杂MgF2晶体在光电化学方面有着潜在的应用价值.