Accurate calibration of TXRF using microdroplet samples

TXRF has been applied in combination with VPD to the analysis of trace impurities in the native oxide layer of Si wafer surfaces down to the range of 10⁸ atoms · cm^–2. Proper quantification of VPD/TXRF data requires calibration with microdroplet standard reference wafers. The precision of calibration function has been evaluated and found to allow quantification at a high level of 3 confidence with microdroplet standard reference.     

Novel methods of TXRF analysis for silicon wafer surface inspection

TXRF became a standard, on-line inspection tool for controlling the cleanliness of polished Si wafers for semiconductor use. Wafer makers strive for an all-over metallic cleanliness of < 10¹⁰ atoms · cm^–2. The all-over cleanliness can be analyzed using VPD/TXRF. For VPD preparation and scanning we have developed an automatic system coupled with TXRF. With synchrotron radiation TXRF we were able to detect 13 fg of Ni in a residual microdroplet, i.e.10⁵ atoms · cm^–2. Received: 8 January 1998 / Revised: 13 July 1998 / Accepted: 30 July 1998     

Vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry for metallic contamination analysis on Ge wafers

Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of vapor phase decomposition–droplet collection–total reflection X-ray fluorescence spectrometry (VPD–DC–TXRF) for metallic contamination analysis towards Ge substrates. A first step that asked for adaptation was the collection chemistry as the Ge wafers surface is not hydrophobic after the VPD treatment. The contact angle could be significantly increased using a concentrated HCl solution. This chemistry has been proved to perform well in the collection of metals from intentionally contaminated Ge wafers. A second step that needed optimization was the matrix removal method as a sample preparation step prior to the TXRF analysis. First, the upper limits of TXRF on Ge containing solutions have been characterized. The accuracy of TXRF is found to be acceptable for Ge contents lower than 1×10¹⁴ atoms (250 ppb in 50 μL) but decreases systematically with higher Ge contents. Fortunately, Ge can be volatilized at low temperatures as GeCl₄ by the addition of HCl. The parameters within this method have been investigated with respect to the removal of Ge and the recovery of metal traces. Finally, the full VPD–DC–TXRF method has been applied on intentionally contaminated Ge wafers and proved to be very accurate.     

Considerations on the ideal sample shape for Total Reflection X-ray Fluorescence Analysis

Total Reflection X-ray Fluorescence analysis (TXRF) is widely used in semiconductor industry for the analysis of silicon wafer surfaces. Typically an external standard is used for the calibration of the spectrometer. This is sensitive to errors in quantification. For small sample amounts the thin film approximation is valid, absorption effects of the exciting and the detected radiation are neglected and the relation between sample amount and fluorescence intensity is linear. For higher total sample amounts deviations from linearity have been observed (saturation effect). These deviations are one of the difficulties for external standard quantification.A theoretical determination of the ideal TXRF sample shape is content of the presented work with the aim to improve the calibration process and therefore the quantification.The fluorescence intensity emitted by different theoretical sample shapes was calculated, whereby several parameters have been varied (excitation energy, density, diameter/height ratio of the sample). It was investigated which sample shape leads to the highest fluorescence intensity and exhibits the lowest saturation effect. The comparison of the different sample shapes showed that the ring shape matches the ideal TXRF sample shape best.     

Application of vapor phase decomposition/total reflection X-ray fluorescence in the silicon semiconductor manufacturing environment

Total reflection X-ray fluorescence (TXRF), in combination with vapor phase decomposition (VPD), provides an efficient method for analyzing trace metal contaminants on silicon wafer surfaces. The progress made in applying these techniques to the analysis of silicon wafers in a wafer fabrication cleanroom environment is reported. Methods of standardization are presented, including the preparation and characterization of VPD standards. While the VPD wafer preparation process increases the sensitivity of the TXRF measurement by at least one order of magnitude, inherent uncertainties associated with the VPD technique itself are apparent. Correlation studies between VPD/TXRF and VPD/inductively coupled plasma mass spectrometry (ICP-MS) are presented.     

Multielement analysis of biological reference materials by total-reflection X-ray fluorescence and inductively coupled plasma mass spectrometry in the semiquant mode

Summary Total-reflection X-ray fluorescence (TXRF) and inductively coupled plasma mass spectrometry (ICP-MS) were used for the analysis of two biological reference materials. The quantifications were carried out after addition of one single standard element which serves as an internal standard in both cases. The results of TXRF analysis were good to satisfactory. The method is therefore suitable for fast multielement analysis, because it needs no special calibration specimens. The results of ICP-MS analysis are at least in the order of magnitude of the certified values. In some cases recoveries fit very well. For quantitative analysis, however, the use of the standard addition method or the calibration with external standards is required.     

Some aspects of the high-temperature behavior of bismuth,strontium and barium on silicon surfaces studied by total reflection X-ray fluorescence spectrometry

Thin films of novel dielectric and ferroelectric materials, such as barium strontium titanate (BST) and strontium bismuth tantalate (SBT), which are scheduled for short-term implementation into standard microelectronic device technology, contain elements like Bi, Sr and Ba which may involve risks with regard to device yield and reliability. Therefore, the high-temperature behavior of bismuth, strontium and barium impurities on Si (100) substrates was studied. Intentionally contaminated Si substrates were annealed at 1000°C under different ambient (inert, oxidizing) by rapid thermal annealing (RTA) or in a furnace and analyzed by total reflection X-ray fluorescence spectrometry (TXRF), vapor phase decomposition/TXRF (VPD/TXRF) and electrolytic metal tracer (Elymat) technique. Ba and Sr are incorporated in the existing or growing oxide during rapid thermal annealing (RTA). Cross-contamination due to gas phase transport may occur in the case of Bi, in particular under N₂ atmosphere, but is of no concern in the case of Ba and Sr. All three contaminants do not exert an influence on the minority carrier lifetime on their own. The results illustrate that TXRF and VPD/TXRF are appropriate techniques for such studies.     

Optimizing total reflection X-ray fluorescence for direct trace element quantification in proteins I: Influence of sample homogeneity and reflector type

Total reflection X-ray fluorescence (TXRF) is a very promising method for the direct, quick and reliable multi-elemental quantification of trace elements in protein samples. With the introduction of an internal standard consisting of two reference elements, scandium and gallium, a wide range of proteins can be analyzed, regardless of their salt content, buffer composition, additives and amino acid composition. This strategy also enables quantification of matrix effects. Two potential issues associated with drying have been considered in this study: (1) Formation of heterogeneous residues of varying thickness and/or density; and (2) separation of the internal standard and protein during drying (which has to be prevented to allow accurate quantification). These issues were investigated by microbeam X-ray fluorescence (μXRF) with special emphasis on (I) the influence of sample support and (II) the protein / buffer system used. In the first part, a model protein was studied on well established sample supports used in TXRF, PIXE and XRF (Mylar, siliconized quartz, Plexiglas and silicon). In the second part we imaged proteins of different molecular weight, oligomerization state, bound metals and solubility.     

Electro-deposition as a sample preparation technique for total-reflection X-ray fluorescence analysis

A one-step sample preparation by electro-deposition for total-reflection X-ray fluorescence (TXRF) analysis has been developed using a common three-electrode arrangement with a rotating disc as the working electrode. Several elements such as Cr, Mn, Fe, Co, Ni, Cu, Zn, Ag, Cd, Pb, As and U have been determined simultaneously in saline matrix. A special electrode tip has been constructed as a holder for the TXRF sample carrier, which consists of polished glassy carbon. The influence of parameters such as time, pH value, and trace element concentration on the deposition yield has been examined for 14 elements. From repeatability studies, the uncertainty in deposition yields at the 95% confidence level has been found to be less than 20% for most of these elements. Typical detection limits range from 5 to 20 ng/l under the experimental conditions applied here. By an appropriate choice of the reference element and by calculation of yield factors, reliable quantification can be achieved directly by internal standardization. First results obtained for the standard reference material CRM 505 are presented.     

Calibration of reference materials for total-reflection X-ray fluorescence analysis by heavy ion backscattering spectrometry

Total-reflection X-ray fluorescence (TXRF) is widely used for the control of metallic contamination caused by surface preparation processes and silicon materials. At least three companies supply a variety of TXRF systems to the silicon integrated circuit (IC) community, and local calibration of these systems is required for their day to day operation. Differences in local calibration methods have become an issue in the exchange of information between IC manufacturers' different FABs (Fabrication Facility) and also between silicon suppliers and IC FABs. The question arises whether a universal set of fluorescence yield curves can be used by these different systems to scale system sensitivity from a single element calibration for calculation of elemental concentrations. This is emphasized by the variety of experimental conditions that are reported for TXRF data (e.g. different angles of incidence for the same X-ray source, different X-ray sources, etc.). It appears that an instrumental factor is required. We believe that heavy ion backscattering spectrometry (HIBS) provides a fundamental method of calibrating TXRF reference materials, and can be used in calculating this instrumental factor. In this paper we briefly describe the HIBS system at the Sandia National Laboratories HIBS User Facility and its application to the calibration of TXRF reference materials. We will compare HIBS and TXRF mapping capabilities and discuss the issues associated with the restrictions of some older TXRF sample stages. We will also discuss Motorola's cross-calibration of several TXRF systems using different elements as references.     

Nanoliter deposition unit for pipetting droplets of small volumes for Total Reflection X-ray Fluorescence applications

A nanoliter droplet deposition unit was developed and characterized for application of sample preparation in TXRF. The droplets produced on quartz reflectors as well as on wafers show a good reproducibility, also the accuracy of the pipetted volume could be proved by a quantitative TXRF analysis using an external standard. The samples were found to be independent of rotation of the sample carrier. Angle scans showed droplet residue behavior, and the fluorescence signal is relatively invariant of the angle of incidence below the critical angle, which is useful for producing standards for external calibration for semiconductor surface contamination measurements by TXRF. Further it could be demonstrated that the nanoliter deposition unit is perfectly able to produce patterns of samples for applications like the quantification of aerosols collected by impactors.     

Investigation of element distribution and homogeneity of TXRF samples using SR-micro-XRF to validate the use of an internal standard and improve external standard quantification

Total reflection X-ray fluorescence analysis (TXRF) offers a nondestructive qualitative and quantitative analysis of trace elements. Due to its outstanding properties TXRF is widely used in the semiconductor industry for the analysis of silicon wafer surfaces and in the chemical analysis of liquid samples. Two problems occur in quantification: the large statistical uncertainty in wafer surface analysis and the validity of using an internal standard in chemical analysis. In general TXRF is known to allow for linear calibration. For small sample amounts (low nanogram (ng) region) the thin film approximation is valid neglecting absorption effects of the exciting and the detected radiation. For higher total amounts of samples deviations from the linear relation between fluorescence intensity and sample amount can be observed. This could be caused by the sample itself because inhomogeneities and different sample shapes can lead to differences of the emitted fluorescence intensities and high statistical errors. The aim of the study was to investigate the elemental distribution inside a sample. Single and multi-element samples were investigated with Synchrotron-radiation-induced micro X-ray Fluorescence Analysis (SR-μ-XRF) and with an optical microscope. It could be proven that the microscope images are all based on the investigated elements. This allows the determination of the sample shape and potential inhomogeneities using only light microscope images. For the multi-element samples, it was furthermore shown that the elemental distribution inside the samples is homogeneous. This justifies internal standard quantification.     

Method and mechanism of vapor phase treatment–total reflection X-ray fluorescence for trace element analysis on silicon wafer surface

Vapor phase treatment (VPT) is a pretreatment with hydrofluoric acid vapor to raise the sensitivity of total reflection X-ray fluorescence spectroscopy (TXRF) for trace metal analysis on silicon wafers. The International Organization for Standardization/Technical Committee 201/Working Group 2 (ISO/TC201/WG2) has been investigating the method to analyze 10⁹ atoms/cm² level of metallic contamination on the silicon wafer surface. Though VPT can enhance the TXRF signal intensity from the metallic contamination, it has turned out that the magnitude of the enhancement varies with the type of methods and the process conditions. In this study, approaches to increase TXRF intensity by VPT are investigated using a fuming chamber in an automated VPD instrument. Higher signal intensity can be obtained when condensation is formed on the sample surface in a humidifying atmosphere and with a decreasing stage temperature. Surface observations with SEM and AFM show that particles with ~ 4 μm in diameter are formed and unexpectedly they are dented from the top surface level.     

Application of ETV-ICPMS in semiconductor process control

Submicron semiconductor manufacturing requires ultra-clean processes and materials to achieve high product yields. It is demonstrated that electrothermal evaporation (ETV) in a graphite furnace coupled with ICPMS offers a new possibility for a fast simultaneous analysis of eight elements with detection limits below 0.2 ng/g in conc. hydrofluoric acid and buffered oxide etch (ammonium fluoride/hydrogen fluoride mixture). ETV-ICPMS also comprises significant improvements in the analysis of metal contamination on silicon wafer surfaces with respect to currently used methods. The contaminants on the surface are usually analyzed by total reflexion X-ray fluorescence spectrometry (TXRF) or dissolved by HF vapour (vapour phase decomposition; VPD) or a mixture of hydrofluoric acid and hydrogen peroxide (droplet surface etching, DSE) and analyzed by GFAA or TXRF. ETV-ICPMS combines the advantages of both analytical methods: the multielemental advantage of TXRF and the possibility to analyze light elements like Al, Mg, Na which may not be analyzed by TXRF. With VPD/DSE-ETV-ICPMS detection limits between 0.2 and 2×10⁹ atoms cm^?2 on a 6″ wafer have been achieved in a simultaneous analysis of eight elements. The main advantage of ETV-ICPMS versus conventional ICPMS in both applications — chemical and surface analysis — is its capability to analyze Fe in the sub-ng/g range. As Fe is one of the most important impurities in semiconductor manufacturing ETV-ICPMS is much more useful for semiconductor applications than low-resolution ICPMS. For the present application potassium iodide was used as a modifier. It enhances the sensitivity by a factor of 3–4 and improves the reproducibility significantly.     

A method for trace element determination of marine periphyton communities on discs of float glass (without sample preparation) using total-reflection X-ray fluorescence spectrometry

A quick method for trace element determination of marine periphyton communities on soda float glass discs is presented. After addition of an internal standard, the community is measured by total-reflection X-ray fluorescence (TXRF) spectrometry. No sample preparation is required except a gentle wash with distilled water. The soda glass disc on which the periphyton community grows is used directly as the sample reflector in TXRF. The method was evaluated by the analysis of a certified reference material of plankton (CRM 414) and by comparison to a wet digestion method. Recovery rates for 13 and 130 μg-samples of CRM 414 are reasonable: between 0.6 and 1.4 for the elements K, Ca, Mn, Fe, Ni, Cu, Zn, As, Rb and Sr. Relative standard deviations for 130 μg-samples are 10% or less for most of these elements. In the comparison to wet digestion, natural periphyton samples were used and the two methods showed a good agreement.The different steps used in the quantification, such as accounting for the contribution from the glass to the TXRF spectrum, and the calculation of the sample mass from the spectrum, are described. It is shown that complicating factors, such as the required water wash and the influence of an inhomogeneous spatial distribution of the periphyton on the glass disc, do not adversely affect the quantification.     

Optimization of TXRF measurements by variable incident angles

Variable incident angles in TXRF instrumentation open up new possibilities in the field of analytical quality assurance of TXRF measurements as well as the possibility of optimizing the measurement angle with respect to the sample carrier. Measurements on the same sample with different incident angles allow a check to be made on the behavior of the internal standard and the elements under investigation within the sample, which makes quantification more reliable, even for difficult samples. This is demonstrated on the example of standard reference material NIST 1633a comparing the relative fluorescence intensities of the elements K, Ti and Fe obtained from a sample prepared from a suspension and a digestion of the SRM material, respectively. Furthermore, it will be shown how the measurement conditions for different sample carrier materials such as quartz and acrylic glass can be optimized by measuring angular-dependent signal and background intensities.     

Applicability of direct total reflection X-ray fluorescence analysis in the case of human blood serum samples

Total Reflection X-Ray Fluorescence (TXRF) is a well-established method, mainly applied in the analysis of liquid samples, offering very low detection limits in most of the cases. Direct application of the TXRF method is not so efficient in blood serum analysis, since the high content of the organic matrix increases significantly the background due to Compton scattering. Chemical treatment of the blood serum samples and related preconcentration techniques have been suggested in the literature, but they are time consuming and increase the possibility of adding contaminants in the sample. In this paper, the applicability of direct TXRF analysis in blood serum samples is examined. The insertion of a Mo filter, after the cut-off reflector, has been found to improve significantly the peak-to-background ratio, especially for the elements of interest such as Cu, Zn, Se and Br. The influence of self-absorption phenomena in the quantification procedure was also investigated with respect to the internal standard used and the sample mass analyzed. Precision and accuracy in the analysis was found to be approximately 4% over the whole atomic number range.     

Quo Vadis total reflection X-ray fluorescence?

The multielement trace analytical method ‘total reflection X-ray fluorescence’ (TXRF) has become a successfully established method in the semiconductor industry, particularly, in the ultra trace element analysis of silicon wafer surfaces. TXRF applications can fulfill general industrial requirements on daily routine of monitoring wafer cleanliness up to 300 mm diameter under cleanroom conditions. Nowadays, TXRF and hyphenated TXRF methods such as ‘vapor phase decomposition (VPD)-TXRF’, i.e. TXRF with a preceding surface and acid digestion and preconcentration procedure, are automated routine techniques (‘wafer surface preparation system’, WSPS). A linear range from 10⁸ to 10¹⁴ [atoms/cm²] for some elements is regularly controlled. Instrument uptime is higher than 90%. The method is not tedious and can automatically be operated for 24 h/7 days. Elements such as S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Br, Sn, Sb, Ba and Pb are included in the software for standard peak search. The detection limits of recovered elements are between 1×10¹¹ and 1×10⁷ [atoms/cm²] depending upon X-ray excitation energy and the element of interest. For the determination of low Z elements, i.e. Na, Al and Mg, TXRF has also been extended but its implementation for routine analysis needs further research. At present, VPD-TXRF determination of light elements is viable in a range of 10⁹ [atoms/cm²]. Novel detectors such as silicon drift detectors (SDD) with an active area of 5 mm², 10 mm² or 20 mm², respectively, and multi-array detectors forming up to 70 mm² are commercially available. The first SDD with 100 mm² (!) area and integrated backside FET is working under laboratory conditions. Applications of and comparison with ICP-MS, HR-ICP-MS and SR-TXRF, an extension of TXRF capabilities with an extremely powerful energy source, are also reported.     

A Calibration Strategy for Stripping Voltammetry of Lead on Silver Electrodes

This work presents a calibration strategy for stripping voltammetry which enables improving and testing accuracy, using as an example quantitative determination of lead ions on a silver electrode. The proposed procedure integrates the interpolative and extrapolative conventional calibration methods. In the proposed approach the accuracy of determination is verified by the evaluation of the statistical agreement of the results obtained in standard addition and a series of standard methodologies. In the experiments only the standard solutions used to perform quantification are required. The application of procedures of baseline subtraction may decrease the value of systematic error, therefore such an algorithm constitutes an essential part of the described methodology and has been given in detail. The proposed calibration strategy has been tested for the determination of Pb(II) ions in certified reference material (CRM) water samples.