Magnetooptical studies of defects and recombination luminescence in LiBaF3

Optically detected EPR investigations have been performed on the recombination luminescence (RL-EPR) of LiBaF₃ crystal, X-irradiated at T=4.2 K. RL-EPR lines of V_K- centres were found, as well as further lines of a defect with and an axial g-tensor with its main axis along a [1 0 0] direction of the crystal.

Measurements of the magnetic circular dichroism of the absorption (MCDA) have been performed on LiBaF₃ crystals X-irradiated at two temperatures (4.2 K and RT). After irradiation at T=4.2 K, the main MCDA bands peak at 453 and 500 nm, but after irradiation at T=300 K, the main bands peak at 444 and 390 nm, there is a change of the sign between the peaks in both cases. The MCDA-detected EPR (MCDA-EPR) consists of one broad EPR line in both cases and belong to electron trap centres. Analysis of half-widths of MCDA-EPR lines showed that both defects should have g-tensors with their axes along the [1 0 0] direction. This symmetry has to be expected for F-type centres in LiBaF₃ crystals. The low-temperature electron centre has a more perturbed ground state as the RT centre.     

Thermally and optically stimulated radiative processes in LiBaF3 crystals

In LiBaF₃ crystals both valence–core transitions (5.4–6.5 eV) and so-called self-trapped exciton luminescence (about 4.3 eV) are important for practical application. Here, we present a study of 4.3 eV luminescence under photo- and thermostimulation after X-irradiation of undoped LiBaF₃ crystals at various temperatures. Optically stimulated luminescence as a result of electron recombination with both self-trapped holes and holes localized at some defects, were observed after X-irradiation below 130 K and that of electron recombination with defect-localized holes was observed after X-irradiation above 130 K. The spectra of thermo-stimulated luminescence (TSL) contain a broad band about 4 eV related to the electron (high-energy side) or hole (low-energy side) recombination depending on TSL peak temperature.     

Radiation-stimulated defects into LaB3O6 and Li6Gd(BO3)3:Ce single crystals

The radiation-induced defect types in LaB₃O₆ and Li₆Gd(BO₃)₃:Ce single crystals have been determined taking into account crystal-lattice features, absorption characteristics, photo- and thermostimulated luminescence data. The possible activator center models in Li₆Gd(BO₃)₃:Ce crystals are proposed.     

LiBaF3 as a thermal neutron scintillator

We report on the scintillation properties of LiBaF₃ upon irradiation with thermal neutrons. For thermal neutron excitation cross luminescence is not observed, contrary to luminescence under X-ray or γ-ray excitation.     

On-line induced absorption measurement on PbWO4, YAlO3:Ce and CsI scintillating crystals

On-line measured radiation-induced absorption spectra and their kinetics are presented for the doped PbWO₄, YAlO₃:Ce and CsI crystals. In the doubly doped PbWO₄:Mo,Y crystals the saturation level of the induced absorption increased with Mo concentration up to 2750 ppm. With a higher concentration it again gradually decreased. Yttrium co-doping around 100 ppm improved considerably the radiation hardness of Mo-doped PbWO₄. Characteristic recovery time of these crystals was about 30 min. Positive influence of Zr⁺⁴ co-doping on characteristics of a set of YAlO₃:Ce samples resulted in decrease in the induced absorption intensity. The presence of very slow recovery processes was in good agreement with thermoluminescence characteristics above room temperature reported earlier. An absorption band round 420 nm appeared in as-grown CsI crystals doped with Tl, and was related to the oxygen contamination.     

Thermally and photostimulated recombination processes in PbWO4 crystals at low temperatures

We have studied thermally and photostimulated recombination processes in PbWO₄ crystals in the temperature interval 90–295 K. We have shown that after x-ray excitation of the crystal at 90 K, the thermally stimulated luminescence curve shows a relatively intense peak at 110 K and weak peaks at about 173, 191, and 232 K. Exposure of the PbWO₄ crystal to IR radiation after excitation by x-ray photons leads to the appearance of photostimulated flash luminescence, a significant decrease in the intensity of the 110 K peak, and a shift of that peak to the 116 K region. But long-wavelength illumination has less of an effect on the intensity and position of the higher temperature peaks. It is assumed that F⁻ centers are formed in the PbWO₄ crystal at 90 K during x-ray exposure. The thermal light sum released by IR illumination in the temperature region 90–150 K has a maximum at ≈108 K. The nature of this maximum is connected with the complex centers [Pb³⁺ + (WO_3-F⁻)]. Optical and thermal degradation of these centers leads to the appearance of emission in the green region of the localized exciton spectrum.     

On the luminescence of LiBaF3:Eu

From the temperature dependence of the line—band luminescence intensity ratio of LiBaF₃:Eu²⁺ a 4f−5d activation energy (Δ) of 800 cm⁻¹ is derived, being much higher than the value reported in the literature (100 cm⁻¹). The temperature dependence of the luminescence decay can be well described with Δ = 800 cm⁻¹ and with 4f−4f and 5d−4f radiative probabilities of 4×10²s⁻¹ and 6×10⁵s⁻¹, respectively.     

UV-luminescence and thermostimulated processes in nonlinear crystals LiB3O5

The results of study on luminescence and recombination processes in the large LiB₃O₅ single crystals are reported. It was shown that the luminescence at 295 nm is excited by photons with energy exceeding the band gap energy, by an electron beam, and also in recombination processes. Four peaks of thermoluminescence at 130, 180, 240 and 330 K are revealed, their parameters are fixed, and the origin of the trapping and recombination centers are determined. The most acceptable models of recombination processes and the origin of the LiB₃O₅ luminescence are discussed.     

Birefringence of CuGa2S4 crystals

The interference of optical transmission spectra of thin CuGaS₂ single crystals is measured in E||c and E⊥c polarizations. The spectral dependencies of the refractive indexes n_o, n_e and Δn = n_o − n_e near the absorption edge have been determined from interference spectra. The intersection of refractive indexes at two wavelengths has been revealed at 300 K and 10 K. The characteristics of Band-Pass-Mode Filter and Band-Elimination-Mode Filter have been measured, which possess 7 narrow absorption (transmission) bands and represent a comb filter. The characteristics of these filters have been studied.     

Electron–hole recombination luminescence in LiYF4:U single crystal

Photoluminescence (PL), photostimulated luminescence (PSL), thermally stimulated luminescence (TSL) and electron paramagnetic resonance (EPR) studies were carried out on LiYF₄:U⁴⁺ and pure LiYF₄ crystals. The PL and EPR investigations have identified the presence of Eu³⁺, Tb³⁺ and Gd³⁺ ions in both of these crystals possibly due to their existence in the starting materials. The luminescence observed during afterglow, PSL and TSL revealed that emission occurs at wavelength positions 382, 413, 437 and 544 nm, which are characteristic of Tb³⁺ ions. The present investigations using PSL and TSL in combination with PL studies before and after gamma irradiation have revealed that selective energy transfer to Tb³⁺ ions occurs during electron–hole recombination processes like PSL and TSL. Even though other luminescent ions (U⁴⁺ and Eu³⁺) are present in the system and U⁴⁺/U³⁺ ions are participating in electron capture/release processes, the selective energy transfer results in Tb³⁺ ions acting as luminescence centers.     

Scintillation properties of the Yb-doped YAlO3 crystals

Yb³⁺-doped YAlO₃ single crystals were grown by the Czochralski method with a radio frequency heating system. The starting melt compositions of Y_1−xYb_xAlO₃ were varied as x=0.02, 0.1, 0.2, 0.3 and 0.45. Photo- and thermo-luminescence characteristics including emission decays were measured within 4–300 K. Very fast charge transfer luminescence of Yb³⁺ was found, with the typical double peak spectrum at 345 and 525 nm. At room temperature the photoluminescence and scintillation decay curves show a leading subnanosecond decay component without any additional slower processes. The high density of Yb-rich YAlO₃ makes this material a promising candidate for fast scintillators.     

Influence of PbF2 and MoO3 on properties of PbWO4 crystals

The influence of doping (with F, Gd and Mo ions) and co-doping (with F, Gd or F, Gd, Mo ions) of PbWO₄ crystals was investigated. It is shown that even a small amount of specific impurities (especially F ions) causes an important redistribution of the point defects and changes the physical properties of the crystals. The cell parameters were refined from X-ray powder diffraction data. It was found that the cell parameters of F-doped PbWO₄ samples are larger than those of undoped samples. Photoluminescence and optical transmission spectra of pure and doped PbWO₄ were investigated.     

Theoretical explanation of g factors for Ti ions in LiNbO3 and LiTaO3 crystals

The EPR g factors g_// and g_⊥ for Ti³⁺ ions at the trigonal octahedral Li⁺ sites of LiNbO₃ and LiTaO₃ crystals are calculated from the third-order perturbation formulas of g factors for 3d¹ ion in trigonal symmetry. In the calculations, the crystal-field parameters are obtained from the structural data by using the superposition model. The calculated values are in reasonable agreement with the observed values. The results are discussed.     

Synthesis, luminescence and crystallographic structure of Eu-doped garnet-type yafsoanite Ca3Te2(ZnO4)3

A red-emitting phosphor of Eu³⁺-doped calcium–tellurium–zinc oxide, Ca₃Te₂(ZnO₄)₃, with a garnet-type structure was synthesized by high temperature solid-state reactions. This phosphor exhibited a strong red emission. The photoluminescence excitation spectrum showed that Ca₃Te₂(ZnO₄)₃:Eu³⁺ can be effectively excited by UV–visible light. The property of long-wavelength excitation for this material has a benefit as a red phosphor in application of white light-emitting diodes. The colour coordinates were calculated. The excitation and emission spectra and luminescence decay curves were obtained using a pulsed, tunable, narrowband dye laser. Crystallographic sites and charge compensation mechanism of Eu³⁺ ions were discussed. The emission line from Eu³⁺ in intrinsic crystallographic site in the lattice was located at 579.56 nm. The emission line from Eu³⁺ in another disturbed site, which is created by the defects created by the charge-compensation, was located at 580.88 nm. The disordered crystallographic sites of Eu³⁺ are benefit for their strong red luminescence corresponding to the ⁵D₀→⁷F₂ transition.     

Electron paramagnetic resonance of gamma irradiated [(CH3)4N]InCl4 and [(CH3)4N]2CdCl4 single crystals

Gamma irradiated [(CH₃)₄N]InCl₄ and [(CH₃)₄N]₂CdCl₄ single crystals were investigated by electron paramagnetic resonance at ambient temperature, and it has been found that both compounds indicate the existence of (CH₃)₃N⁺ radicals. The g factors were found to be isotropic, and the hyperfine constant for H atoms was measured as 2.86 mT and is isotropic for this radical in these substances. The hyperfine coupling constant of the N nucleus with the hole in (CH₃)₃N⁺ in [(CH₃)₄N]InCl₄ was found to be anisotropic with the A_zz=2.92, A_yy=1.62 and A_xx=1.40 mT. From these, it has been revealed that the C_3v-axis of (CH₃)₃N⁺ radical performs rotational or jumping reorientational motions around a fixed axis, in addition to the rotations of protons in CH₃ groups and the rotational motions of CH₃ groups around the C_3v-axis of the radical. The g, and the hyperfine coupling factors of the N nucleus were isotropic in (CH₃)₃N⁺ in [(CH₃)₄N]₂CdCl₄. This indicates the motional behaviour of the radical in this compound is as in a liquid. This isotropic behaviour of the hyperfine coupling constants was found to be same until the attainable lowest temperature of 113 K in our laboratory.     

Er3+/Yb3+共掺Gd3Sc2Ga3O12晶体的上转换发光

研究了提拉法生长的Er³⁺/Yb³⁺:Gd₃Sc₂Ga₃O₁₂和Er³⁺:Gd₃Sc₂Ga₃O₁₂晶体在室温下320—1700nm范围的吸收光谱和500—750nm范围内的上转换荧光谱,同时对其上转换荧光的可能发生机制、途径以及上转换过程可能对Er^{3+相似文献}   

CaCu3Ti4O12陶瓷的介电特性与弛豫机理

本文采用Novocontrol宽频介电谱仪在-100 ℃–100 ℃温 度范围内、0.1 Hz–10 MHz频率范围内测量了表面层打磨前 后CaCu₃Ti₄O₁₂陶瓷的介电特性, 分析了CaCu₃Ti₄O₁₂陶瓷的介电弛豫机理. 首先, 基于对宏观“壳-心”结构的定量分析, 排除了巨介电常数起源于表面层效应的可能性; 其次, 基于经典Maxwell-Wagner夹层极化及其活化能物理本质的分析, 排除了巨介电常数起源于经典Maxwell-Wagner极化的可能性; 最后, 依据晶界Schottky势垒与本征点缺陷的本质联系, 提出了巨介电常数起源于Schottky势垒边界陷阱电子弛豫的新机理. 陷阱电子弛豫机理反映了CaCu₃Ti₄O₁₂陶瓷本征点缺陷、 电导、介电常数之间的本质关系. 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电弛豫 Schottky势垒 点缺陷     

Synthesis, vibrational and optical properties of a new three-layered organic-inorganic perovskite (C4H9NH3)4Pb3I4Br6

An organic-inorganic hybrid perovskite (C₄H₉NH₃)₄Pb₃I₄Br₆ was synthesized and studied by X-ray diffraction, Raman and infrared spectroscopies, optical transmission and photoluminescence. The title compound, abbreviated (C₄)₄Pb₃I₄Br₆, crystallises in a periodic two-dimensional multilayer structure with P2₁/a space group. The structure is built up from alternating inorganic and organic layers. Each inorganic layer consists of three sheets of PbX₆ (X=I, Br) octahedra. Raman and infrared spectra of the title compound were recorded in the 100-3500 and 400-4000 cm⁻¹ frequency ranges, respectively. An assignment of the observed vibration modes is reported. Optical transmission measurements, performed on thin films of (C₄)₄Pb₃I₄Br₆, revealed two absorption bands at 474 and 508 nm. Photoluminescence measurements have shown a green emission peak at 519 nm.     

Heats of solution/substitution in TlNO3 and CsNO3 crystals and in RbNO3 and CsNO3 crystals from heats of transition: the complete phase diagrams of TlNO3-CsNO3 and RbNO3-CsNO3 systems

From measurements of the decrease in the heat (enthalpy) of transition in the solid phase using differential scanning calorimetry, the apparent molar heats of solution, slope ΔH_t/x, the partial molar heats of solution at infinite dilution, χ, and the heats of solution, ΔH_s^°, of Tl⁺ in CsNO₃ crystal and Cs⁺ in TlNO₃ crystal and Rb⁺ in CsNO₃ crystal and Cs⁺ in RbNO₃ crystal along with their recovered lattice energies, ΔH_L^°, are reported. ΔH_s^° of Tl⁺ and Rb⁺ in CsNO₃ crystal are each found to be negligible or zero representing an ideal solid solution, i.e. ΔH_mix=0. The complete phase diagrams of the TlNO₃-CsNO₃ and RbNO₃-CsNO₃ systems with details of the sub-solidus regions are included. The properties of Tl_(1−x)Cs_xNO₃ and Rb_(1−x)Cs_xNO₃ compositions are discussed in terms of a ‘mixed crystal’ or ‘crystalline solid solution’ in relation to parallel compositions of Tl_(1−x)Rb_xNO₃.     

Surface characterization of In4Se3 single crystals

Surface properties of indium subselenide (In₄Se₃) were studied. It was confirmed, that the superstructure of this crystal is characterized by nanowire-like cylindrical clusters with diameter dimensions of about 20 nm and stairs along the a-axis up to 5 nm, depending on the cleavage conditions.