Specific Features of the Photoconductivity of Compensated i-GaAs in the Spectral Range with hν > E g

The photoconductivity of semi-insulating GaAs compensated by chromium oxide is investigated. It is demonstrated that after heat treatment, the current photosensitivity of a sample irradiated with particles whose energies exceed the band gap reaches large values, which does not agree with the De Vore theory. These large photosensitivity values are due to slowing down of the surface recombination caused by the presence of oxygen in i-GaAs. The high current photosensitivity extends to = 0.52 m. The observed structure of the photoconductivity spectrum is most likely caused by vertical electron transitions from the valence subband, split in the process of spin-orbital interaction, to the central minimum of the conduction band. The influence of crystal irradiation by particles with energies h > E _g on the spectral photoconductivity distribution is investigated. It is demonstrated that irradiation by electrons and -quanta causes the photocurrent to increase. After neutron irradiation, the photocurrent decreases at short wavelengths in accordance with the De Vore theory. It is demonstrated that i-GaAs 2O₃> is a very sensitive detector of red radiation.     

Theoretical Analysis of the Distortion Tensors During the Formation Of 90° <110> Reorientation Nanobands in the Course of Plastic Deformation of Nickel on Bridgman Anvils

Russian Physics Journal - Based on the results of electron microscopy examinations, a theoretical study of the distortion tensors of strain localization nanobands with a 90°...     

Hall Mobility of Electrons in Ge in the Vicinity of the L 1⇄Δ1 Heterovalley Transition Induced by a High Pressure

The data on the Hall mobility of electrons in germanium with a two-charge gold level are presented versus the hydrostatic pressure up to 7 GPa at 295 K. The parameters S = 0.57 ± 0.10 and S = 0.29 ± 0.12 characterizing the intensity of electron scattering between the nonequivalent L ₁ and ₁ valleys in the vicinity of the heterovalley transition nave been calculated.