Anisotropic Interface Roughness Scattering in a Lateral Superlattice

A novel interface roughness due to the perturbation of the periodic interface structure is studied theoretically for a lateral superlattice realized by an interface corrugated quantum well. It is found by numerical simulation that the correlation function for interface roughness can be well modeled by a sinusoidal function with an exponential decay in the direction of corrugation. Such a feature makes the correlation function far from a Gaussian function which is extensively used as a theoretical approximation of the correlation function for interface roughness. With such a correlation function, the influence of interface roughness scattering on electronic transport in the lateral superlattice is investigated.Consequently, it gives rise to a high anisotropy of electronic transport both in the absence and presence of a magnetic field, by which the relevant experiments can be well explained.     

Efficiency of electrical manipulation in two-dimensional topological insulators

We investigate the efficiency of electrical manipulation in a two-dimensional topological insulator by inspecting the electronic states of a lateral electrical potential superlattice in the system. The spatial distribution of the electron density in the system can be tuned by changing the strength of the externally applied lateral electrical superlattice potential. This provides us the information about how efficiently one can manipulate the electron motion inside a two-dimensional topo- logical insulator. Such information is important in designing electronic devices, e.g., an electric field effect transistor made of the topological insulator. The electronic states under various conditions are examined carefully. It is found that the dispersion of the mini-band and the electron distribution in the potential well region both display an oscillatory behavior as the potential strength of the lateral superlattice increases. The probability of finding an electron in the potential well region can be larger or smaller than the average as the potential strength varies. These features can be attributed to the coupled multiple-band nature of the topological insulator. In addition, it is also found that these behaviors are not sensitive to the gap parameter of the two-dimensional topological insulator model. Our study suggests that the electron density manipulation via electrical gating in a two-dimensional topological insulator is less effective and more delicate than that in a traditional single-band semiconductor.     

Nonlinear Electronic Transport Equations for Tunneling Superlattices

We present a nonlinear electronic transport theory for a tunneling superlattice which is composed of interacting electrons with impurity and phonon scatterings. The theory is based on the Lei-Ting balance-equation method and a newly developed matrix separation technique for the density-correlation-function. Taking account of the overlap of the wave-functions between adjacent wells, the nonlinear dc resistivity in a transverse strong electric field is explicitly expressed in terms of the matrixdensity- correlation-function, which can be straightforwardly calculated in RPA as long as the single well wave function is given.     

Elastic scattering of light from quantum-well exciton-polarization fluctuations in a microcavity

A model of exciton polarization fluctuations in a quantum well of a randomly variable lateral width is proposed. The stochastic part of the nonlocal susceptibility of quasi-two-dimensional excitons is expressed through random functions of the shape of quantum well boundaries. A theory of elastic light scattering from a quantum well placed in a Fabry-Perot cavity or a semiconductor microcavity is constructed in the lowest (Born) approximation in interface roughness height. The scattering cross section is calculated for an arbitrary statistics of interface roughness. The spectral and angular dependences of the intensity of light scattered by a quantum well have been studied using Gaussian correlation functions of the interface shape. It follows from numerical estimates that elastic resonant scattering in quantum wells should be observed at an rms roughness height of the order of the atomic monolayer thickness.     

Transport properties in a line defect superlattice of graphene

It was recently reported that a kind of graphene line defect can be fabricated in a controllable experimental way. In the present work we theoretically investigate the band structure and the electronic transport properties of a graphene superlattice formed by embedding periodically line defects in the graphene lattice. Based on the calculated results, we suggest that such a superlattice can be used as a quantum wire array which can carry much larger current than a single graphene nanoribbon. A remarkable advantage of this superlattice over other quantum wires is that the electronic transport in it is insensitive to scattering effects except that the scattering potential range is smaller than the graphene lattice constant. Moreover, we find that the anisotropy of the Dirac cone presented in this superlattice has a nontrivial influence on the universal minimal conductivity and the sub-Poissonian shot noise of graphene.     

Reprint of "Calculation of the temperature dependence of the vertical and horizontal mobilities in InAs/GaSb superlattices"

In order to limit cooling requirements, it is important to operate superlattice devices such as infrared detectors at the highest possible temperatures consistent with maintaining satisfactory figures of merit regarding signal and noise. One of the characteristics governing the device performance is vertical carrier mobility, although only horizontal mobilities are routinely measured. Recently, we calculated low-temperature vertical and horizontal mobilities, as limited by interface roughness scattering, for type-II InAs/GaSb superlattices as a function of SL dimensions and the degree of roughness. We found that the horizontal mobility was a double-valued function of the roughness correlation length, Λ. Here, we show that the indeterminacy of Λ can be overcome by comparing the temperature dependence of the calculated and measured mobilities; hence, we extend the calculation to higher temperatures. While the scattering mechanism itself is temperature independent, the band structure and the carrier distribution are temperature-dependent. As a function of temperature, we find that as a function of the correlation length, mobilities can increase, decrease, or remain constant. This behavior is explained on the basis of the physics of the problem.     

Density Correlation Function in a Tunneling Superlattice with Electrons and Holes

We have studied the electron-electron, electron-hole and the hole-hole density correlation functions of the tunneling superlattice with electrons and holes by using the tight-binding envelope functions and taking account of the nearest-neighbor overlap. Based on a newly developed matrix separation technique, these density correlation functions can be explicitly expressed in terms of a matrix density correlation function which allows for a RPA calculation. An effective matrix screened carrier-carrier potential is introduced, which together with the matrix denmty correlation functions given in this paper provides a convenient way to study excitation, transport, and other propertics of a weak tunneling superlattice with both electrons and holes.     

Backward electronic Tamm states in graphene-based heterostructures

We study the electronic surface waves (the so-called Tamm states) localized at the interface between a graphene-based superlattice and a homogeneous graphene by applying suitable electrodes on a graphene sheet. The magnitude as well as the sign of the slope of the Tamm dispersive curve can be flexibly tuned just by varying the external voltage. Particularly, in addition to the conventional forward Tamm states, backward Tamm states in which the wave vector of the electronic surface wave is antiparallel with the group velocity can be realized.     

Transport studies of MBE-grown InAs/GaSb superlattices

We report on the results of transport studies of MBE-grown InAs/GaSb superlattices. We demonstrate that the in-plane mobility is limited by interface roughness scattering by showing that, as a function of InAs layer width L, the in-plane mobility behaves as μ ∝ L^5.3, which closely follows the classic sixth power dependence expected from theory for interface-roughness-limited mobility. Fits to the mobility data indicate that, for one monolayer surface roughness, the roughness correlation length is about 35 Å. Next, we show that the in-plane carrier mobility in InAs/GaSb superlattices is inversely proportional to carrier density in n- and p-type samples, the result of screened interface roughness scattering.     

Probing the interface fluctuations in semiconductor superlattices using a magneto-transport technique

We have analysed the vertical transport properties of a GaAs/AlAs short period superlattice as the crossed magnetic field is rotated in the plane of the layers. The rotation of the magnetic field has been used to probe the interface roughness along the different in-plane crystallographic directions. Two maxima separated by 180° in the current intensity have been observed when the magnetic field is rotated through 360°. We interpret our results in terms of anisotropic scattering from elliptical interface defects of which the great axis is along [11̄0] and the minor one along [110].     

Well-width dependence of interface roughness scattering in GaAs/Ga1 − xAlxAs quantum wells

Well-width dependence of quantum and transport mobilities of electrons in GaAs/GaAlAs multiple quantum wells is studied for wells with widths ranging between 50 Å and 145 Å Experimental results are obtained from the amplitude analysis of the Shubnikov–de Haas (SdH) oscillations and from conventional Hall measurements at temperatures betweenT = 15 K and 4.2 K. A novel technique is employed to estimate, theoretically, the interface roughness parameters from electron quantum and transport lifetimes. The modelling is carried out for a range of layer fluctuations, width (Δ) and lateral size (Λ), as to obtain the best fit to the experimental results for individual samples. Our results indicate that the interface roughness scattering limits equal both quantum and transport mobilities at low temperatures, and that the nature of scattering by interface roughness (small or large angle) depends not only on the size and the width of the fluctuations but also on the distribution of these fluctuations within the samples. Therefore, unlike the predictions of the existing theoretical models, which assume constant values of Δ and Λ for all well widths, the well-width dependence of interface roughness scattering cannot be verified experimentally.     

薄膜界面粗糙对双晶摇摆曲线的影响

用X射线衍射动力学理论,模拟计算InP衬底上InGaAs/AllnAs超晶格和InGaAs单层膜的X射线双晶摇摆曲线,计算结果表明:薄膜界面粗糙对单层膜的衍射峰和超晶格的零级衍射峰影响较小,但却明显影响单层膜衍射干涉条纹和超晶格的±1级卫星峰,随着平均界面粗糙度的增大,单层膜衍射干涉条纹强度减弱并趋于消失;超晶格的±1级卫星峰变弱并逐渐展宽,理论计算的模拟双晶摇摆曲线与超晶格实验曲线比较表明:高质量匹配In_0.53Ga_0.47As(85?)/Al_{0.4 关键词：}     

Terahertz radiation of Bloch oscillators excited by an electromagnetic field in lateral semiconductor superlattices

The action of a strong high-frequency electromagnetic field on a lateral semiconductor superlattice is considered based on the quasi-classical electron transport theory in the self-consistent wave formulation. The theory predicts that a lateral superlattice can emit terahertz radiation wave trains, which are associated with periodic excitation of Bloch oscillations in the superlattice arising because of the development of transient processes in it in a variable self-consistent electric field. The conditions necessary for observing Bloch oscillator radiation were found. The spectral composition of radiation transmitted through the superlattice and the energy efficiency of frequency multiplication related to Bloch oscillator excitation were calculated.     

Quantitative interface roughness analysis of Fe/Cr superlattices

The quantitative characterization of the interface roughness of Fe/Cr superlattices is necessary for the understanding of the transport properties of such structures. This must include both vertical and lateral roughness components. The information can be obtained by specular and off-specular X-ray diffraction and conversion electron Mößbauer spectroscopy. We show how models describing specular and diffuse X-ray diffraction can be applied to extract quantitative data. The robustness of such data can be further enhanced using anomalous scattering, leading to an enhanced material contrast for Fe/Cr. Similarity and complementarity of the X-ray diffraction results with the Mößbauer data are discussed.     

Spin Polarization and Spin‐Flip Through Phosphorene Superlattice

The spin‐dependent transport properties, including spin polarization and spin‐flip for phosphorene superlattice in the presence of an extrinsic Rashba spin‐orbit interaction (RSOI) based on the transfer matrix method, are studied. The results show that the number of barriers in the superlattice structure plays a dominant role in output spin polarization, which can be used in designing optimized spintronic devices. In addition, by controlling on the Rashba strength, an incident spin‐up electron can be transmitted as a spin‐down electron. Also, it enables to convert the unpolarized incident electronic beam (with zero spin polarization) into an arbitrary output spin polarization, which plays a significant role in qubit circuits.     

沉积工艺对二氧化锆薄膜生长特性影响的研究

利用反应离子束溅射、反应磁控溅射和电子束蒸发在K9基底上沉积ZrO2薄膜，并用原子力显微镜对薄膜表面形貌进行测量。通过数值相关运算，对不同工艺条件下薄膜生长界面进行定量描述，得到了薄膜表面的粗糙度指数、横向相关长度、标准偏差粗糙度等参量。由于沉积条件的不同，薄膜生长具有不同的动力学过程。在反应离子束溅射和反应磁控溅射沉积薄膜过程中，薄膜生长动力学行为均可用Kuramoto-Sivashinsky方程来描述，电子束蒸发制备薄膜的过程可以用Mullins扩散模型来描述，并发现在沉积薄膜过程中基底温度和沉积过程的稳定性对薄膜表面特征影响很大。     

BALANCE EQUATION THEORY FOR HIGH-FIELD AND HIGH-FREQUENCY ELECTRONIC TRANSPORT IN TYPE-Ⅱ SUPERLATTICES

Balance equations are established for steadystate nonlinear electronic transport in the presence of an electric field in a type-Ⅱ superlattice, which is modelled by periodically arranged electron-hole bi-layers of finite thickness. Both carrier-phonon and carrier-impurity scatterings,as well as electron-hole interaction, are taken into account. The approach is also extended to the discussion of high-frequency linear transport of the system. The general equations-for determining the current density are obtained and the explicit expressions for complex dynarnical resistivity due to electron-hole coupling are given.     

Mean free path of ballistic electrons in GaAs/AlGaAs superlattices

The mean free path of ballistic electrons in GaAs/AlGaAs superlattices was measured using the technique of hot electron spectroscopy in magnetic fields perpendicular to the growth direction. We utilize the fact that the total effective path of an injected hot electron is a function of the applied magnetic field. For a superlattice with 6.5 nm GaAs wells and 2.5 nm GaAlAs barriers we measure a mean free path of 80 nm. The experimental results of a ten-period SL sample are compared to a fully three-dimensional calculation of the transmission including interface roughness with island sizes of 10 nm. We demonstrate that the observed mfp is limited due to interface roughness scattering for temperatures up to 50 K.     

粗糙界面对Bi2Te3/PbTe超晶格热电优值影响的理论分析

以Bi₂Te₃/PbTe超晶格薄膜为例,分析电子在Bi₂Te₃量子阱中的输运过程,综合了薄膜的经典散射效应和理想量子效应,并以此混合效应为基础,在PbTe障碍层厚度一定时,模拟计算了两种混合效应中量子效应占不同比例时,Bi₂Te₃/PbTe超晶格热电优值的变化.在镜面反射占混合效应的0.3时,得到的热电优值与当前报道的量子阱超晶格的实验值接近. 关键词： 超晶格 粗糙界面 热电优值