Temperature dependence of upconversion luminescence in erbium-doped tellurite glasses

Temperature quenching characteristics of infrared-to-visible frequency upconversion in ytterbium-sensitized erbium-doped tellurite glasses under 970 nm excitation were reported. Intense upconversion emissions around 530, 545 and 657 nm corresponding to the ²H_11/2, ⁴S_3/2 and ⁴F_9/2 transitions to the ⁴I_15/2 ground state were observed. The green emission around 530 nm presents continuous increase with increase of temperature. While the emission around 545 nm increases from 20 to 80 K and reaches the largest value around 80 K, then decreases from 80 to 300 K. The dependence of intensity characteristics on temperature was systematically analyzed by rate equations and a simple three-level system. In addition, the temperature dependence on the multiphonon relaxation rates (²H_11/2, ⁴S_3/2→⁴F_9/2) fitted with 4 phonons of the 760 cm⁻¹ was presented.     

Temperature dependence of the luminescence lifetime of a europium complex immobilized in different polymer matrices

The temperature dependence of the luminescence lifetime of temperature sensor films based on europium (III) thenoyltrifluoroacetonate (EuTTA) as sensor dye in various polymer matrices such as polystyrene (PS), polymethylmethacrylate (PMMA), polyurethane (PU) and model airplane dope was studied and compared. The luminescence lifetime of EuTTA was found to depend on the polymer matrix. The temperature sensitivity of lifetime was maximum for EuTTA-PS coating in the temperature range of 10-60 °C. The effect of concentration of the sensor dye in the polymer on the lifetime and temperature sensitivity was also studied.     

Temperature dependence of ion-induced auger electron emission from (111) silicon: I. Experiments

Abstract

Measurements of both secondary electron emission coefficient γ and SiL₂₃ Auger yield ρ_A obtained from (111) Si target bombarded by high fluence of noble gas ions were performed. For Si irradiated at room temperature at doses more than 10¹⁷ ions per cm², monotonous increasing variation of γ and ρ_A versus incidence angle i was observed. For Si irradiated at a temperature more than a critical value, γ(i) and ρ_A(i) curves exhibited, superimposed to monotonous variation, some minima when the ion beam penetrates the crystal along low index directions. In the range 20–650°C, the Auger yield temperature dependence showed a sharp variation around a critical value depending on the ion mass for a given incident energy. These results are linked to an amorphous-crystalline phase transition.     

Temperature dependence of trap luminescence of CdS doped glasses

The temperature dependence of the optical absorption edge and integrated luminescence of CdS semiconductor doped glasses, having similar characteristics but manufactured by different manufactures like Corning 373 and Schott 1743 has been investigated. Transmission Electron Microscope (TEM) analysis is presented for these samples to understand the contribution of the inhomogeneous distribution of nanocrystal size. The energy gap shrinkage coefficient (α) and effective phonon energy (θ) have been derived from the temperature dependence of the energy gap. The activation energy of thermal photoluminescence (PL) quenching has been derived from the temperature dependence of luminescence intensity. An anomalous behaviour of the luminescence intensity and of bandwidth in the temperature range 50-10 K has been discussed using configuration co-ordinate model. The difference in the behaviour of different samples in the range 50-10 K has been suggested to arise from the inhomogeneous size distribution, which is supported by TEM analysis.     

Temperature dependence of photoluminescence from CdSe nanocrystals embedded in silica matrix

In this work, CdSe nanocrystals (NCs) embedded in SiO₂ matrix were grown by radio frequency (RF)-sputtering technique. X-ray technique was used to characterise the structural properties of the system. The NC's size was estimated to be around 4±1 nm in diameter. The temperature dependence of the photoluminescence from the CdSe/SiO₂ system showed carriers thermal exchange between the NCs and deep defects in the matrix. The evolution of the excitonic energy emission with temperature is about 10 meV in the temperature range 15-295 K. This weak shift was explained by thermal mismatch between the matrix and the NCs.     

Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer

Temperature and excitation dependent photoluminescence(PL) of InGaN epilayer grown on c-plane Ga N/sapphire template by molecular beam epitaxy(MBE) has been systematically investigated. The emission spectra of the sample consisted of strong multiple peaks associated with one stimulated emission(SE) located at 430 nm and two spontaneous emissions(SPE) centered at about 450 nm and 480 nm, indicating the co-existence of shallow and deep localized states.The peak energy of SE exhibiting weak s-shaped variation with increasing temperature revealed the localization effect of excitons. Moreover, an abnormal increase of the SPE intensity with increasing temperature was also observed, which indicated that the carrier transfer between the shallow and deeper localized states exists. Temperature dependent time-resolved PL(TRPL) demonstrated the carrier transfer processes among the localized states. In addition, a slow thermalization of hot carriers was observed in InGaN film by using TRPL and transient differential reflectivity, which is attributed to the phonon bottleneck effect induced by indium aggregation.     

Temperature dependence of a Ce3+ doped SiO2 radioluminescent dosimeter for in vivo dose measurements in HDR brachytherapy

Fiber-optic-coupled scintillation dosimeters are characterized by their small active volume if compared to other existing systems, and are therefore particularly suited for internal in vivo dosimetry. Due to possible differences between calibration conditions (i.e., room temperature) and conditions of clinical application (i.e., body temperature), their temperature dependence should be accurately studied. In this work, the temperature dependence of a Ce³⁺ doped SiO₂ scintillation detector coupled to a SiO₂ optical fibre was investigated for high dose rate brachytherapy applications. To this aim, two sets of irradiations with two different Ir-192 sources were performed in a water bath phantom at water temperatures ranging between 17 °C and 40.4 °C (Experiment 1). The relative response of the dosimeter was collected and analyzed. The same experiment was repeated with a second optical fibre which was designed without the active Ce³⁺ doped part at its end (Experiment 2) as well as by changing the length of the passive fibre inserted in water (Experiment 3). The two sets of measurements of experiment 1 were in accordance, indicating a linear increase with temperature of the scintillator sensitivity, with an average increase of 0.27 ± 0.2%/°C. In experiment 2, a 0.5%/°C increase of the collected signal resulted for the passive fibre. No significant difference of the temperature coefficient was found by changing the length of the fibre inserted in water (experiment 3). The obtained results show that a temperature-specific correction factor should be adopted at temperatures different than room temperature (e.g. for in vivo internal dosimetry). Further studies are required to understand the observations.     

MgO和Cu的弹性常数随温度及压强变化关系的研究

从Anderson-Grüneisen参数定义式和热膨胀系数定义式出发,根据Tallon的普遍化理论,推导出了一个用于计算弹性常数的理论模型,用所得到的理论模型分别计算了MgO和Cu两种固体材料的弹性常数C_(11)、C_(12)和C_(44)随压强以及温度变化的理论数值,并将理论计算结果与Kumar模型计算结果以及相关实验数据进行了比较,对所得到的理论模型计算结果与Kumar模型计算结果之间的差异性进行了分析和探讨.研究结果表明:所推导的理论模型计算结果与实验数据更加符合,并且由于所用的推导方法不依赖于晶体的结构,因此该模型具有更好的合理性和普适性.     

MgO和Cu的弹性常数随温度及压强变化关系的研究

从Anderson-Grüneisen参数定义式和热膨胀系数定义式出发,根据Tallon的普遍化理论,推导出了一个用于计算弹性常数的理论模型,用所得到的理论模型分别计算了MgO和Cu两种固体材料的弹性常数 、 和 随压强以及温度变化的理论数值,并将理论计算结果与Kumar模型计算结果以及相关实验数据进行了比较,对所得到的理论模型计算结果与Kumar模型计算结果之间的差异性进行了分析和探讨。研究结果表明：所推导的理论模型计算结果与实验数据更加符合,并且由于所用的推导方法不依赖于晶体的结构,因此该模型具有更好的合理性和普适性。     

MgO和Cu的弹性常数随温度及压强变化关系的研究

从Anderson-Grüneisen参数定义式和热膨胀系数定义式出发,根据Tallon的普遍化理论,推导出了一个用于计算弹性常数的理论模型,用所得到的理论模型分别计算了MgO和Cu两种固体材料的弹性常数 、 和 随压强以及温度变化的理论数值,并将理论计算结果与Kumar模型计算结果以及相关实验数据进行了比较,对所得到的理论模型计算结果与Kumar模型计算结果之间的差异性进行了分析和探讨。研究结果表明：所推导的理论模型计算结果与实验数据更加符合,并且由于所用的推导方法不依赖于晶体的结构,因此该模型具有更好的合理性和普适性。     

Temperature dependence of the luminescence properties of LaCl3：Ce crystal

The optical properties of LaCl3：Ce crystal are reported in this paper. Optical transmission spectrum, photoluminescence and time resolved photoluminescence spectra at different temperatures are investigated. It is found that optical transmittance is as high as 80% between 320 nm and 600 nm, and no obvious absorption band is found in this region. Emission intensity and decay time of photoluminescence are quite stable with the change of the temperature between 80 K and 500 K. No thermal quenching is present up to 500 K, and decay time keeps at 17±2 ns. With the increase of the temperature, the whole emission bands and excitation bands present broadening and overlapping, leading to the strengthening of re-absorption of the Ce^3＋ emission, which makes the emission spectra have a red shift trend.     

Temperature dependent polariton emission from strongly coupled organic semiconductor microcavities

We investigated the absorption and photoluminescence (PL) of J-aggregates of a cyanine dye both in a thin film format and when used as the active layer in a strongly-coupled microcavity. We show that as temperature is reduced, the absorption linewidth of the J-aggregates narrows and shifts to higher energy. When the J-aggregate is placed in a microcavity we find that the energy of the polariton modes also shifts to higher energies as temperature is reduced. We compare the intensity of PL emission from the upper and lower branches at resonance as a function of temperature, and find that it can be described by an activation energy of 25 meV. PL emission spectra at resonance also suggest that uncoupled excitons inside the microcavity populate the upper polariton branch states.     

Temperature dependence of Ni2+ luminescence in KZnF3, MgF2 and MgO

Absorption, emission, lifetime and excitation data were taken for Ni²⁺ in KZnF₃, MgF₂ and MgO. In KZnF₃ and MgF₂ the temperature dependence of the lifetime together with the excitation spectra indicates that the correct assignment for the red emission is a transition from the ¹T_2g level to the ³T_2g level. The MgO spectrum was complicated by trace impurities of Cr³⁺. A configurational coordinate analysis of KZnF₃ : Ni²⁺ is included in the discussion. The models of Mott, Struck and Fonger, and Flaherty and Di Bartolo were used to estimate nonradiative rates.     

Temperature dependence electron spin resonance spectra of a magnetic fluid

ESR spectra of a laboratory synthesized kerosene base magnetic fluid containing ultrafine magnetic particles (average diameter of 100A) of Zn_0.1 Fe_0.9Fe₂O₄ are recorded at different temperatures. A narrow signal was observed above the melting point of the carrier liquid (200 K) which can be attributed to a very small volume fraction of superparamagnetic particles in the system. The peak-to-peak line width for both low and high field cooled configurations show an increase with decreasing temperature. This observed behaviour has been explained by considering various energy terms which contribute to the line width.     

Temperature dependence of GMR and effect of annealing on electrodeposited Co-Ag granular films

The magnetoresistance of Co-Ag granular films composed of superparamagnetic and ferromagnetic particles was studied at different temperatures. The increase in the GMR values while decreasing temperature down to 20 K was quantified. The non-saturating behaviour of the MR(H) curves was retained even at the lowest measurement temperature, which was mainly attributed to the dipolar interaction among the superparamagnetic particles. The influence of the annealing conditions on the magnetoresistance was also studied. In all conditions, a decrease in the GMR values was measured being attributed to an increase in the particle size.     

Temperature dependence of the 1.064-μm stimulated emission cross-section of Cr:Nd:YAG crystal

The fluorescence emission spectra of Cr:Nd:YAG crystal are measured and the effective stimulated emission cross-section of the crystal is obtained from −80 to +80 °C. A linear temperature dependence between −80 and +80 °C is reported for the 1.064-μm peak stimulated emission cross-section of Cr:Nd:YAG crystal.     

Temperature dependence of transport ac losses in Bi-2223/Ag multifilamentary tapes

Temperature dependence of transport ac losses in two Bi-2223/Ag multifilamentary tapes with different dc current–voltage characteristics was measured using a lock-in technique at power frequencies. At each temperature, different criteria for critical current determination were used. Comparisons of normalised ac losses with predictions of theoretical models for a tape with elliptical cross-section and a thin strip were made. It was found that the form of the current–voltage characteristic and the critical current criterion play an important role in comparison with theoretical data. A new normalisation procedure of ac loss data is proposed.     

Temperature dependence of transport properties in ZnS-based magnetic tunnel junctions

We have recently evidenced a junction magnetoresistance (JMR) signal of about 5% in magnetic tunnel junctions (MTJs) with ZnS as tunnel barrier layer. The MTJ were grown by magnetron sputtering on Si (1 1 1) substrate at room temperature and have the following structure: Fe_6 nmCu_30 nmCoFe_1.8 nmRu_0.8 nmCoFe_3 nmZnS_2 nmCoFe_1 nmFe_4 nmCu_10 nmRu_3 nm.

The hard magnetic bottom electrode consists of an artificial antiferromagnetic structure in which the rigidity is ensured by the antiferromagnetic exchange coupling between two FeCo layers through an Ru spacer layer. The magneto-transport for these MTJ has been studied at various temperatures to gain understanding of the transport mechanism in such junctions. A strong and linear increase of the JMR is observed as the temperature is decreased to reach 10% at a low temperature, while the conductance decreases with decreasing temperature. To understand the mechanism at the origin of these behaviors, the contribution of magnon is taken into account. It is concluded that the observed behaviors are not only related to the magnon contribution but that resonant low-level states inside the barrier can assist the tuneling transport.     

Temperature dependence of GaSb and AlGaSb solar cells

Sb-based alloys offer great potential for photovoltaic and thermophotovoltaic applications. In this paper, we study the performance of Al_xGa_1-xSb (x = 0, 0.15, and 0.50) single-junction solar cells over a temperature range of 25–250 °C. The dark current-voltage, one-sun current-voltage, and external quantum efficiency measurements were acquired at different temperatures. Correlations between experimental and numerical results are made to draw conclusions about the thermal behavior of the cells. It is shown that, while the bandgaps decrease linearly with temperature leading to the reduction of open-circuit voltages, the short-circuit current densities decrease with non-linear trends. The temperature-dependent dark current densities were extracted by fitting the dark current-voltage curves to single- and double-diode models to give an insight into the effect of intrinsic carrier concentration (n_i) on the cell performance. We find that the n_i has a significant impact on temperature-dependent cell performance. These findings could lay a groundwork for the future Sb-based photovoltaic systems that operate at high temperatures.     

冲击加载下LY12铝合金的动态屈服强度和层裂强度与温度的相关性

采用可测量任意反射表面的速度干涉仪对LY12铝合金在不同初始温度条件下的动态屈服与层裂行为进行了实验研究，温度范围从室温到接近熔化温度.实验结果显示：LY12铝合金的动态屈服强度随着温度升高而快速下降，当初始温度为847K (比熔化温度低86K) 时，其屈服强度仅为室温下的15％，层裂强度也随着温度升高而减小，在296—847K的实验温度范围内，层裂强度损失80%.通过实验结果与模型估算值的比较，发现Zerilli-Armstrong (ZA) 模型可以对LY12铝合金的动态屈服强度与温度的相关性进行较好 关键词： 温度相关性 LY12铝合金 动态屈服强度 层裂强度