Electrical properties of nitrogen implanted GaSe single crystal

N‐implantation to GaSe single crystals was carried out perpendicular to c‐axis with ion beam of 6 × 10¹⁵ ions/cm² dose having energy values 30 keV and 60 keV. Temperature dependent electrical conductivities and Hall mobilities of implanted samples were measured along the layer in the temperature range of 100‐320 K. It was observed that N‐implantation decreases the resistivity values down to 10³ Ω‐cm depending on the annealing temperature, from the room temperature resistivity values of as‐grown samples lying in the range 10⁶‐10⁷ Ω‐cm. The temperature dependent conductivities exhibits two regions (100‐190 and 200‐320 K) with the activation energies of 234‐267 meV and 26‐74 meV, for the annealing temperatures of 500 and 700 °C, respectively. The temperature dependence of Hall mobility for the sample annealed at 500 °C shows abrupt increase and decrease as the ambient temperature increases. The analysis of the mobility‐temperature dependence in the studied temperature range showed that impurity scattering and lattice scattering mechanisms are effective at different temperature regions with high temperature exponent. Annealing of the samples at 700 °C shifted impurity scattering mechanism toward higher temperature regions. In order to obtain the information about the defect produced by N‐implantation, the carrier density was analyzed by using single donor‐single acceptor model. We found acceptor ionization energy as E_a = 450 meV, and acceptor and donor concentration as 1.3 × 10¹³ and N_d = 3.5 × 10¹⁰ cm⁻³, respectively. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of ion implantation on structural and photoconductive properties of Bridgman grown GaSe single crystals

The structure and temperature dependent spectral photoconductivity of as‐grown and N‐and Si‐implanted GaSe single crystals have been studied. It was observed that post‐annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. The band edge is shifted in the implanted sample which is attributed to the structural modifications and continuous shallow levels introduced upon implantation and annealing. Our calculations showed that the trap density is increased upon implantation and annealing which confirms a possibility of explanation the phenomenon within a framework of continuous trap levels. Photocurrent measurements as a function of photo‐excitation intensity also support continuous distribution of localized states in the band gap. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim     

Structural,electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique

Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X‐Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1 × 10⁹ to 6.5 × 10⁵ Ω‐cm. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for as‐grown, 36 and 472 meV for as‐implanted and 39 and 647 meV for implanted and annealed GaSe single crystals at 500°C. Calculated activation energies from the conductivity measurements indicated that the transport mechanisms are dominated by thermal excitation at different temperature intervals in the implanted and unimplanted samples. By measuring photoconductivity (PC) measurement as a function of temperature and illumination intensity, the relation between photocurrent (I_PC) and illumination intensity (Φ) was studied and it was observed that the relation obeys the power law, I_PC αΦⁿ with n between 1 and 2, which is indication of behaving as a supralinear character and existing continuous distribution of localized states in the band gap. As a result of transmission measurements, it was observed that there is almost no considerable change in optical band gap of samples with increasing annealing temperatures for as‐grown GaSe; however, a slight shift of optical band gap toward higher energies for Ge‐implanted sample was observed with increasing annealing temperatures. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optoelectronical properties of polycrystalline β ‐GaSe thin films

Polycrystalline β ‐GaSe thin films were obtained by the thermal evaporation of GaSe crystals onto glass substrates kept at 300 °C under a pressure of 10^–5 Torr. The transmittance and reflectance of these films was measured in the incident photon energy range of 1.1–3.70 eV. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct allowed transitions band gap of 1.83 eV. The data analysis allowed the identification of the dispersive optical parameters by calculating the refractive index in the wavelength region of 620–1100 nm. In addition, the photocurrent of the samples was studied as function of incident illumination‐intensity and temperature. The photocurrent is found to exhibit sublinear and supralinear character above and below 270 K, respectively. The temperature dependent photocurrent data analysis allowed the calculation of photocurrent activation energies as 603, 119 and 45 meV being dominant in the temperature regions of 250–300 K, 180–240 K and 80‐160 K, respectively. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Optical properties of Sr3TaGa3Si2O14 single crystal

The specific rotation ρ of strontium tantalum gallium silicate Sr₃TaGa₃Si₂O₁₄ (STGS) piezoelectric single crystal was determined from 350 to 850 nm by measuring the optical transmission between parallel polarisers in Z direction. It is shown that Sr₃TaGa₃Si₂O₁₄ has quite large a value of ρ which is a little smaller than that of strontium niobium gallium silicate Sr₃NbGa₃Si₂O₁₄ (SNGS). The crystal with ordered structure which is isostructural to calcium gallium germanate Ca₃Ga₂Ge₄O₁₄ (CGG) was grown by Czochraiski technique. And its birefringence was also determined. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth,thermophysical and electrical properties of the nonlinear optical crystal BPO4

Bulk BPO₄ crystals have been successfully grown from high temperature solution of BPO₄, Li₂O, and MoO₃ in the molar ratio of 2.3:1:1.3 by the top‐seeded solution growth (TSSG) method using [101]^c orientation seeds. There are no visible scattering centers and impurity of Mo in the as‐grown BPO₄ crystals, whose optical homogeneity reaches up to 1.6×10^–5/cm. BPO₄ possesses a specific heat of 0.50–1.00 J·g^–1·K^–1 in the temperature range from 298 to 698 K and exhibits strong anisotropic thermal expansion behavior with α_a = 14.2 × 10^–6 K^–1 and α_c = ‐4.0 × 10^–7 K^–1. Moreover, the thermal conductivity coefficients are calculated to be κ_a = 62.4 W·m^–1·K^–1 and κ_c = 51.5 W·m^–1·K^–1, which are remarkably larger than those of some commonly used borates. The measured dielectric constants, ε_a and ε_c, are 4.8 and 6.1, respectively, and the ionic conductivity coefficients, σ_a = 4.3 × 10^–8 S/cm and σ_c = 9.5 × 10^–8 S/cm, are several orders of magnitude lower than that of LiB₃O₅ (LBO). (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoelectronic and electrical properties of CuIn5S8 single crystals

To identify the impurity levels in CuIn₅S₈ single crystals, the dark electrical conductivity and photoconductivity measurements were carried out in the temperature range of 50–460 K. The data reflect the intrinsic and extrinsic nature of the crystals above and below 300 K, respectively. Energy band gaps of 1.35 and 1.31 eV at 0 K and 300 K, were defined from the dark conductivity measurements and the photocurrent spectra, respectively. The dark and photoconductivity data in the extrinsic temperature region reflect the existence of two independent donor energy levels located at 130 and 16 meV. The photocurrent‐illumination intensity dependence (F) follows the law I_phαF^γ, with γ being 1.0, 0.5 and 1.0 at low, moderate and high intensities indicating the domination of monomolecular, bimolecular and strong recombination at the surface, respectively. In the intrinsic region and in the temperature region where the shallow donor energy level 16 meV is dominant, the free electron life time, τ_n, is found to be constant with increasing F. In the temperature region 140 K < T < 210 K, the free electron life time increases with increasing illumination intensity showing the supralinear character. Below 140 K, τ_n decrease with decreasing illumination intensity. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals

The conductivity, mobility, photoconductivity and photo response measurements in GaS_0.75Se_0.25 mixed crystals were carried out in the temperature range of 150‐450 K. The room temperature conductivity, mobility and electron concentration values were 10^‐9 (Ω‐cm)^‐1, 48 cm²V^‐1s^‐1 and ∼10⁹ cm^‐3, respectively. Two donor levels were obtained from temperature‐dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single donor‐single acceptor analysis yields the same donor level at 465 meV with donor and acceptor concentrations of 8.7 × 10¹⁴ and 5.3 × 10¹³ cm^‐3, respectively. The mobility‐temperature dependence shows that ionized impurity scattering dominates the conduction up to the temperature 310 K with different temperature exponent, while above this critical temperature; the phonon scattering is dominant conduction mechanism. From the photo‐response spectra, the maximum photocurrent was observed for all the samples at 2.42 eV, and varied slightly with temperature. Moreover, the photocurrent‐light intensity dependence in these crystals obeys the power law, I_ph ∝ ϕ^γ with γ between 1.7 and 2.0 for various applied fields and temperatures. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and characterization of a new langasite‐type single crystal Sr3NbAl1.5Ga1.5Si2O14

Single crystals of Sr₃NbAl_1.5Ga_1.5Si₂O₁₄ (SNAGS) with langasite structure have been successfully grown by Czochralski method. The X‐ray diffraction (XRD) verified that the as‐grown crystal was isostructural with A₃BC₃D₂O₁₄ structure and the lattice parameters were calculated as follows: a = 8.242 Å, c = 5.041 Å, V = 296.6 ų. The piezoelectric coefficient d₁₁ was 5.7pC/N, which was 2.47 times of α‐quartz (d₁₁=2.31pC/N). The electric resistivity was up to 3.04×10⁶ Ωcm at 700 °C for X‐cut sample. In addition, the transmission spectrum of the SNAGS crystal showed that it had a high transmittance (>80%) in the range of 350‐800 nm and exceeded 90% above 520 nm. These results suggest that the SNAGS crystals have potential applications in high‐temperature piezoelectric sensors and optical techniques. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure and electrical properties of Mg‐doped ZnO nanoparticles

Mg_xZn_1‐xO (x=0.01‐0.3) nanoparticles were synthesized by the sol‐gel technique using solutions of Mg and Zn based organometalic compounds. The electrical properties of Mg doped zinc oxide (ZnO) were studied within wide temperature range from 300 to 500 K under the N₂ gas flow (flow rate: 20 sccm) and in the frequency range from 40 Hz to 1 MHz for ac electrical measurements. The dc conductivities and the activation energies were found to be in the range of 10^‐9‐10^‐6 S/cm at the room temperature and 0.26‐0.86 eV respectively depending on doping rate of these samples. The ac conductivity was well represented by the power law Aω^s. The conduction mechanism for all doped ZnO could be related to correlated barrier hopping (CBH) model. The complex impedance plots (Nyquist plot) showed the data points lying on a single semicircle, implying the response originated from a single capacitive element corresponding to the nanoparticle grains. The crystal structures of the Mg_xZn_1‐xO nanoparticles were characterized using X‐ray diffraction. The calculated average particle sizes values of Zn_1‐xMg_xO samples are found between 29.72 and 22.43 nm using the Sherrer equation. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

High‐quality LaCoO3 single crystal grown by optical floating zone method and its electromagnetic properties

A LaCoO₃ single crystal with 4 mm in diameter and 30 mm in length has been grown by optical floating zone method. The as‐grown crystal is highly crystalline with the rhombohedral perovskite structure (R3c) and grows parallel to the (121) direction. The room temperature resistivity of the as‐grown crystal is 0.12 Ω·cm and the insulator‐metal transition occurs around 500 K. The coercivity and the remanence of the as‐grown crystal are 5 Oe and 6.61×10^–5 μ_B/f.u. at 5 K, respectively. In 1000 Oe under zero‐field cooling, the magnetic susceptibility of the as‐grown crystal shows an upturn in a Curie tail fashion below 35 K, and appears a wave crest over the interval 55 K≤T≤90 K. In addition, a slope change of 1/χ(T) at about 12 K is observed in 50000 Oe under zero‐field cooling. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Segregation of Ga during growth of Si single crystal

Segregation phenomenon of Ga in Czochralski (CZ)–Si crystal growth has been investigated. The effective segregation coefficient, k_eff, of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k₀=0.0079.     

Structure,growth and optical properties of Zn0.24Ni0.76(SO4)·7H2O single crystal

A new crystalline complex zinc nickel sulfate heptahydrate (ZNSH) has been prepared. The crystal structure was investigated by x‐ray single crystal diffraction method and the empirical formula is Zn_0.24Ni_0.76(SO₄)·7H₂O. The ZNSH crystal belongs to the orthorhombic space group P2₁2₁2₁ with cell parameters a = 6.7742(14) Å, b = 11.748(2) Å, c = 12.009(2) Å. The deep‐green ZNSH single crystal with dimension of 30 × 25 × 25 mm³ has been grown by the cooling solution method. The constituent ratio of ZNSH crystal grown from various compounding solutions at temperature range 40‐50 °C is approximate invariant. The crystal absorption spectra with theoretical analysis are reported. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Flux growth and characterization of Ti‐ and Ni‐doped forsterite single crystals

Forsterite monocrystals doped with Ti and Ni were grown by the flux growth technique. A suitable mixture of flux (MoO₃, V₂O₅, Li₂CO₃) and nutrient was slowly cooled down to 750 °C from 1250 °C or 1350 °C. The crystals were then characterized by powder and single‐crystal X‐ray diffraction, scanning electron microscopy and differential scanning calorimetry (DSC). Variations observed in crystal size were attributed by both the varying experimental conditions in which they had been obtained, and to the amount of Ni substituted for Mg in the structure. High abundances of doped forsterite required a cooling rate of 1.8 K h^‐1. These synthetic, well‐characterized Ti and Ni doped forsterite crystals may have potential for exploitation in industrial fields. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Characterization of melt grown phthalic anhydride single crystal

The bulk organic single crystal of phthalic anhydride (PA) was grown by vertical Bridgman technique. The structural perfection of the grown crystal was analysed by high resolution X‐ray diffraction (Multicrystal X‐ray diffractometry) studies. The thermal and mechanical properties have been studied. The second harmonic generation relative efficiency of Phthalic anhydride crystal is compared with KDP crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Annealing effects on electrical, optical and structural properties of semiconducting transparent tetra-tert-butyl 2,3 naphthalocyanine thinfilms

Although there are lot of early reports on inorganic semiconducting transparent thinfilms, very few experimental results have been reported regarding the organic semiconducting transparent thinfilms especially in the area of Naphthalocyanines. Here we report on the preparation and characterization of transparent and semiconducting 2,11,20,29 Tetra Tert-Butyl 2,3 Naphthalocyanine (TTBNc) thinfilms using Physical Vapor Deposition Technique. Post deposition air and vacuum annealing is done on thinfilms. From the DC electrical conductivity studies, the activation energy has been calculated using the Arrhenius plot and the bandgap energy has been obtained from the optical transmission spectra. The different structural parameters like crystal structure; grain size and surface morphology are measured from the x-ray diffraction (XRD) and scanning electron microscopic analysis (SEM) respectively. Atomic force microscopic (AFM) images of different TTBNc thinfilms account for significant changes on surface level patterns and a clear evidence of agglomeration of nano crystalline materials. Further the average grain size is calculated and confirmed in the nano level at which it forms clusters to get the particular surface topology.     

Ferrous Tartrate recognition of sodium chloride {111} and its effect on crystal growth

The surface morphology and growth pattern of some molecules could be altered by the recognition of ferrous tartrate (FeC₄H₄O₆, FeTA). We have explored this phenomenon in the aspect of growth rate and morphology alteration of sodium chloride crystals where few researches have been done. In this paper, the crystallization behavior of NaCl with added FeTA was studied by supersaturation test, conductivity, scanning electron microscopy (SEM), and X‐ray diffraction (XRD). The results showed that the supersaturation of NaCl solution could be increased to about 5.5 % in presence of FeTA prior to the onset of crystallization. Furthermore, SEM images and XRD results indicated that the addition of FeTA could change the morphology of NaCl crystal from cubic to octahedron by impeding the growth of {111} and {110} faces. Besides, the interaction between NaCl {111} face and FeTA was discussed and the possible spatial structure of FeTA was speculated through the lattice parameters of NaCl.     

单掺Rb+和Cs+的KTP晶体生长及其电导率

采用高温溶液降温法在掺质浓度均为5mol;的KTP-K4溶液中分别生长了单掺Rb+和Cs+的KTP晶体,发现掺质改变了晶体生长习性,在相应生长体系中掺质Rb+和Cs+的分配系数分别为O.646和0.08,掺质KTP晶体的晶胞参数a0和b0比纯KTP晶体者略有增长.通过掺Rb+或Cs+,KTP晶体的c向电导率明显降低,但晶体在350～1100nm范围内的光透过性质未受影响.     

Growth and dielectric properties of Ta2O5 single crystal by the floating zone method

Large Ta₂O₅ single crystal with high‐dielectric permittivity was successfully grown by floating zone (FZ) method under air atmosphere. The grown crystal that has been obtained was typically about 8 mm in diameter and 90 mm in length. The crystal growth parameters were optimized. The crystal symmetry, characterized by means of X‐ray diffraction (XRD), was found to be tetragonal. The relative permittivity and loss tangent along growth and [001] direction were measured in the temperature range between ‐200 °C and 200 °C, which showed a strong dielectric anisotropy. At a frequency of 1 MHz and 20 °C, the dielectric permittivity along the growth direction and [001] direction are 81.17 and 25.04 respectively. The stabilization of high‐temperature phase can explain the dielectric enhancement.     

Growth and characterization of 2,6‐dibenzylidenecyclohexanone single crystal

Following the temperature reduction method, growth of single crystals of organic 2,6‐dibenzylidenecyclohexanone (DBCH) material from ethanol solution is reported in the present work. Solubility and metastable zone width measurements were carried out under stirring and nonstirring conditions of solution. Cell dimensions were obtained from single crystal X‐ray diffraction study. From FT‐IR spectral analysis, various functional groups of this crystal were identified. UV‐Visible spectral analysis was made. Mechanical strength of the grown crystal was estimated on the prominent (110) face using a Vickers microhardness tester. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)