Mott‐hopping processes in neodymium oxide thin films prepared on Si(100) substrates

Thin Nd oxide films were prepared on Si (P) substrates to form MOS structure. The oxide films were annealed at different conditions and their crystal structures were determined by X‐ray diffraction (XRD). The dc electrical transport properties of the devices with amorphous and crystalline Nd oxide were investigated. The current‐temperature J(T) characteristics suggest that the carrier transport through the insulator follows Mott's variable‐range hopping (VRH) mechanism and its results were compared with the results obtained from X‐ray diffraction. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Variable‐range hopping dc conduction in dysprosium oxide films grown on Si substrates

Thin dysprosium oxide films were prepared on p‐Si substrates to form MOS structure. The oxide films were annealed at different conditions and their crystal structures were determined by X‐ray diffraction. The dc electrical transport properties of the devices were studied in the temperature range (293‐400 K). The current‐temperature characteristics was analysed according to Mott's variable‐range hopping mechanism. The mechanism's parameters were calculated and compared with the results obtained by X‐ray diffraction. It was established that as the average grain size of air‐annealed films increases, the disorder degree parameter T₀ decreases and the density of states at Fermi level increases, which leads to decrease the average hopping distance. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of annealing temperature on the structural and optical properties of amorphous Sb2Te2Se thin films

Thin films of Sb₂Te₂Se were prepared by conventional thermal evaporation of the presynthesized material on Corning glass substrates. The chemical composition of the samples was determined by means of energy‐dispersive X‐ray spectrometry. X‐ray diffraction studies on the as‐deposited and annealed films revealed an amorphous‐to‐crystalline phase transition. The as‐deposited and annealed films at T _a = 323 and 373 K are amorphous, while those annealed at T _a= 423 and 473 K are crystalline with a single‐phase of a rhombohedral crystalline structure as that of the source material. The unit‐cell lattice parameters were determined and compared with the reported data. The optical constants (n , k ) of the investigated films were determined from the transmittance and reflectance data at normal incidence in the spectral range 400–2500 nm. The analysis of the absorption spectra revealed non‐direct energy gaps, characterizing the amorphous films, while the crystalline films exhibited direct energy gaps. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Dielectric properties of Zr-Sn-Ti-O thin films prepared by pulsed laser deposition

Zr_0.26Sn_0.23Ti_0.51O₂ (ZSTO) films with a dielectric constant of about 40 have been prepared directly on silicon substrates by pulsed laser deposition at 600 °C. TEM observation showed that the as-deposited films are amorphous. Differential thermal analysis showed that the ZSTO films crystallize at about 620 °C. Capacitance-voltage (C-V) characteristics of metal-oxide-semiconductor (MOS) composed of Pt/ZSTO/Si prepared at different deposition temperature have been measured. The EOT of the MOS structures with the same ZSTO physical thickness increased slightly when the deposition temperature increased. The EOT is about 4.2 nm for the 40 nm ZSTO deposited at 600 °C. The leakage current characteristics of ZSTO films for the as deposited, post-annealed in oxygen ambient and post-annealed in nitrogen ambient by rapid thermal annealing have been studied comparatively. The films post-annealed in nitrogen ambient have the lowest leakage current and the as-deposited films have the largest leakage current characteristics. It is proposed that amorphous Zr-Sn-Ti oxide stabilized at 600 °C is a potential dielectric material for dynamic random access memory and high k dielectric gate applications.     

Photoelectrical properties of crystalline titanium dioxide thin films after thermo‐annealing

This paper reports the photoelectrical properties of sol gel derived titanium dioxide (TiO₂) thin films annealed at different temperatures (425‐900°C). The structure of the as‐grown film was found to be amorphous and it transforms to crystalline upon annealing. The trap levels are studied by thermally stimulated current (TSC) measurements. A single trap level with activation energy of 1.5 eV was identified. The steady state and transient photocurrent was measured and the results are discussed on the basis of structural transformation. The photocurrent was found to be maximum for the films annealed at 425°C and further it decreases with annealing at higher temperatures. The photoconduction parameters such as carrier lifetime, lifetime decay constant and photosensitivity were calculated and the results are discussed as a function of annealing temperature. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO2 films

Mixed ZnO‐ZrO₂ films have been obtained by sol‐gel technology. By using spin coating method, the films were deposited on Si and glass substrates. The influence of thermal annealings (the temperatures vary from 400 °C to 750 °C) on their structural properties has been studied. The structural behavior has been investigated by the means of XRD and FTIR techniques. The results revealed no presence of mixed oxide phases, the detected crystal phases were related to the hexagonal ZnO and to crystalline ZrO₂. The sol‐gel ZnO‐ZrO₂ films showed polycrystalline structure with a certain degree of an amorphous fraction. The optical transmittance reached 91% and it diminished with increasing the annealing temperatures. The optical properties of the sol‐gel ZnO‐ZrO₂ films, deposited on glass substrates are excellent with high transparency and better then those of pure ZrO₂ films, obtained at similar technological conditions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Radiation-induced trapping centers in thin silicon dioxide films

In this paper the technological and scientific aspects of radiation-related charge trapping in thin SiO₂ films are reviewed. These films are amorphous in nature and are thermally grown on single crystal silicon substrates serving as the insulating layer in metal-oxide-semiconductor (MOS) capacitors and transistors. The structure and operation of these devices are reviewed with special emphasis on the effect of charges trapped in the oxide. The technical importance of understanding the interaction of ionizing radiation with thin SiO₂ films is illustrated with two practical examples. The first involves the operation of MOS transistors in environments where ionizing radiation is present, leading to an accumulation of positive space charge in the oxide. The second deals with process-induced defects generated by radiation encountered during the fabrication of devices by processes such as electron beam lithography or electron gun metallization. Unannealed traps of this type capture hot electrons producedin the substrate during the operation of the MOS transistor. In both these examples, the charging of the oxide results in instabilities which degrade operation.

Its sensitivity to charge trapped in the insulator makes the MOS system an ideal vehicle for scientific study of these phenomena. The basic techniques for characterizing the density, capture cross-sections, and location are briefly discussed and applied to the problem of radiation-induced defects in thin SiO₂ films. Ionizing radiation is shown to interact with the SiO₂ in two modes. In the first it supplies carriers to fill pre-existing hole traps at the interfaces. In the second it creates electron and hole traps in the bulk of the thin film. These latter defects are in a neutral state after irradiation and are detectable only when either electrons or holes are subsequently injected into the oxide. The capture cross-sections, trap densities and location of these centers in the film are presented. The annealing treatments required to remove these traps from aluminium and polysilicon gate devices are also discussed. The number traps produced by an incident 25 KV electron beam is found to depend weakly on the dosage. A dipolar defect, produced by the ionizing radiation, seems to explain the behavior of the neutral centers.     

Synthesis,morphology and structure of the dense (Y1‐xEux)2O3 spherical shape particles

The method to decrease of the porosity (densification) of crystalline spherical particles of the solid substitution solution, obtained by the method of precipitation from aqueous solution followed by low temperature crystallization of the amorphous intermediate product was proposed. The comparative analysis of morphology and structure of the particles before and after densification have been carried. It has been established that porosity of (Y_1‐xEu_x)₂O₃ particles has decreased 5 times compared to their initial state. It has been shown that densification process of the (Y_1‐xEu_x)₂O₃ spherical particles changes their morphology and structure: the size of the crystals doubles, the number and area of crystalline boundaries decrease, the intercrystalline spaces, which forming pores, are almost absent.     

XPS characterization of corrosion films formed on the crystalline, amorphous and nanocrystalline states of the alloy Ti60Ni40

X-ray photoelectron spectroscopy investigations were carried out on the crystalline, amorphous and nanocrystalline states of the alloy Ti₆₀Ni₄₀ after corrosion test in 1 M HNO₃ aqueous medium using potentiodynamic polarization method. Polarization plots revealed that the nanocrystalline state is more corrosion resistant than the amorphous and crystalline states of the alloy Ti₆₀Ni₄₀. The XPS characterization of the oxide film formed after corrosion tests revealed that a multiple phase oxide film is formed on the crystalline and amorphous specimens of the alloy Ti₆₀Ni₄₀ consisting of Ti²⁺, Ti³⁺ and Ti⁴⁺ species along with some unoxidized Ti in metallic form (Ti⁰) in the case of crystalline specimen whereas the oxide film formed on nanocrystalline specimen consists of only Ti²⁺ and Ti⁴⁺ species. The high corrosion resistance of nanocrystalline state is attributed to the presence of fewer oxide species in the oxide film than that of the amorphous and crystalline states of the alloy Ti₆₀Ni₄₀.     

Characterisation of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties

Al₂O₃ and ZrO₂ mixtures for gate dielectrics have been investigated as replacements for silicon dioxide aiming to reduce the gate leakage current and reliability in future CMOS devices. Al₂O₃ and ZrO₂ films were deposited by atomic layer chemical vapor deposition (ALCVD) on HF dipped silicon wafers. The growth behavior has been characterized structurally and electrically. ALCVD growth of ZrO₂ on a hydrogen terminated silicon surface yields films with deteriorated electrical properties due to the uncontrolled formation of interfacial oxide while decent interfaces are obtained in the case of Al₂O₃. Another concern with respect to reliability aspects is the relatively low crystallization temperature of amorphous high-k materials deposited by ALCVD. In order to maintain the amorphous structure at high temperatures needed for dopant activation in the source drain regions of CMOS devices, binary Al/Zr compounds and laminated stacks of thin Al₂O₃ and ZrO₂ films were deposited. X-ray diffraction and transmission electron microscope analysis show that the crystallization temperature can be increased dramatically by using a mixed oxide approach. Electrical characterization shows orders of leakage current reduction at 1.1-1.7 nm of equivalent oxide thickness. The permittivity of the deposited films is determined by combining quantum mechanically corrected capacitance voltage measurements with structural analysis by transmission electron microscope, X-ray reflectivity, Rutherford backscattering, X-ray photoelectron spectroscopy, and inductively coupled plasma optical emission spectroscopy. The k-values are discussed with respect to formation of interfacial oxide and possible silicate formation.     

IR study of ultrathin plasma SiO2 and plasma treated thermal SiO2 films

The infrared absorption spectra both of ultrathin plasma SiO₂ and of thermal oxide (15–100 nm) treated in RF O₂ plasma are investigated in the wave number range from 400 to 4000 cm⁻¹. A conclusion is made that the plasma oxide consists of amorphous and different kinds of crystalline phases. The IR spectra of plasma oxide depend slightly on the discharge parameters. The structure of the as-grown thermal oxide, thinner than 40 nm, is shown to have defects and the presence of crystalline phases is observed too. The IR spectra of these oxides are changed significantly after plasma exposure. The influence of RF O₂ plasma on the thermal oxide, thicker than 40 nm, is negligible with respect to structural changes.     

Microcrystalline germanium thin films prepared by the reactive RF sputtering method

We focus on thin film microcrystalline germanium (μc-Ge) as narrow gap semiconductor materials for high infrared sensitivity and consider applying it to thermo-photo-voltaic (TPV). The μc-Ge films were prepared on glass substrates by the reactive RF sputtering method with Ar and H₂ gas mixtures. We could successfully produce photosensitive μc-Ge films. Higher crystallinity structures do not always result in better carrier properties. Probably, the amorphous portions between crystalline grains have important roles to suppress the grain boundary defects. We applied the μc-Ge to i-layers of pin structure devices, and observed the photovoltaic effect for the first time.     

The effect of oxygen partial pressure on physical properties of nano‐crystalline silver oxide thin films deposited by RF magnetron sputtering

Nano‐crystalline silver oxide films were deposited on glass and silicon substrates held at room temperature by RF magnetron sputtering of silver target under different oxygen partial pressures. The influence of oxygen partial pressure on the structural, morphological, electrical and optical properties of deposited films was investigated. Varying oxygen partial pressure during the sputter deposition leads to changes of mixed phase of Ag₂O and Ag to a single phase of Ag₂O and to AgO. The X‐ray diffraction and X‐ray photoelectron spectroscopy results showed the formation of single phase Ag₂O with cubic structure at oxygen partial pressures of 2x10^‐2 Pa while the films deposited at higher oxygen partial pressure of 9x10^‐2 Pa showed the formation of single phase of AgO with monoclinic structure. Raman spectroscopic studies on the single phase Ag₂O showed the stretching vibration of Ag‐O bonds. Single‐phase Ag₂O films obtained at oxygen partial pressure of 2x10^‐2 Pa were nano‐crystalline with crystallite size of 20 nm and possessed an electrical resistivity of 5.2x10^‐3 Ωcm and optical band gap of 2.05 eV. The films deposited at higher oxygen partial pressure of 9x10^‐2 Pa were of AgO with electrical resistivity of 1.8x10^‐2 Ωcm and optical band gap of 2.13 eV. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fabrication of ferric oxide/reduced graphene oxide/cadmium sulfide heterostructure photoelectrode for enhanced photoelectrochemical performance

A novel high‐efficiency photoelectrode (Fe₂O₃/reduced graphene oxide/CdS) built from heterostructure and conductive scaffold has been successfully designed and synthesized. Reduced graphene oxide works as a “bridge” which benefits for electron and hole transport. The obtained heterostructure photoelectrodes were systematically characterized by X‐ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), Raman spectroscopy, and X‐ray photoelectron spectroscopy (XPS). The photoconversion efficiency (η) and photocurrent densities vs. time (I‐t) curves responding to monochromatic lights have been further investigated in‐depth, which reveals that introduction of CdS and reduced graphene oxide played an important role in the enhancement of photoelectrochemical performance.     

The neutron diffraction study of liquid GeTe and As2Te3

The radial distribution analyses for GeTe and As₂Te₃ are made at temperatures above the melting point in the range of momentum transfer between 0.7 and 10.0 Å^?1 by the neutron diffraction technique. Furthermore, the local order in amorphous GeTe is determined by analyzing the intensity data of the electron diffraction of its thin film. The result for the amorphous film indicates that the local distribution of atoms in amorphous GeTe is not characteristic of the structure of its crystalline state. The shape of the peaks of the intensity curve for liquid GeTe differs from that for the amorphous and crystalline states. However, the short bond length and the small coordination number determined from liquid RDF suggest that the covalent-like bonding between nearest-neighbor atoms remains unbroken when melting. The general form of the structure factor for liquid As₂Te₃ is similar to that for the amorphous material reported previously. The position of the first peak of RDF in the liquid state is observed to be shifted to a shorter distance than the average of nearest-neighbor atoms in crystalline As₂Te₃. The structure of GeTe differs considerably between the crystalline, amorphous and liquid states, whereas the local order in the liquid As₂Te₃ is similar to that in the amorphous state but not in the crystalline state.     

Influence of solvents on the hydrothermal formation of one‐dimensional magnesium hydroxide

The influence of solvents on the hydrothermal formation of one‐dimensional (1D) magnesium hydroxide (Mg(OH)₂) was investigated in this paper. Uniform 1D Mg(OH)₂ with a length of 10‐20 μm, a width of 100‐200 nm and a preferential growth along [110] direction have been synthesized by treating magnesium oxysulfate (5Mg(OH)₂·MgSO₄·3H₂O, abbreviated as 513MOS) nanowires in NaOH ethanol solution at 180 °C for 2.0 h. The experimental results indicated that the solvent of ethanol and NaOH concentration were essential for the conversion of 513MOS nanowires to 1D Mg(OH)₂. The slow release of MgSO₄ from 513MOS and the heterogenous precipitation of Mg(OH)₂ at the defects left by MgSO₄ dissolution promoted the formation of 1D Mg(OH)₂. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of polymerizing agent on structure and spectroscopic properties of nano‐crystalline La0.8Sr0.2MnO3 powders

Strontium‐doped lanthanum manganite (La_1‐xSr_xMnO₃ or LSM) is the material most widely used on solid oxide fuel cells cathode. In this work, nano‐scale La_0.8Sr_0.2MnO₃ powders have been synthesized by polymeric precursor‐based methods using different polymerizing agents with the aim of evaluating the influence of this change in the final powder. The powders calcined at 700 °C for 2 h have been characterized by X‐ray diffraction (XRD), scanning electron microscopy (FE‐SEM) and Fourier transform infrared spectroscopy (FTIR) in order to investigate the quality of both synthesis routes. It is shown that the crystal structure and morphology of the particles are significantly dependent on the preparation conditions. Single phase and La_0.8Sr_0.2MnO₃ nano‐crystalline particles less than 30 nm were obtained using ethylene glycol as polymerizing agent. FTIR results have been indicated that only the powder obtained using gelatin presented small traces of hydroxyl groups on its surface. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural,Morphological and Electrical Studies on Barium Strontium Titanate Thin Films Prepared by Sol‐Gel Technique

The crystal structure, surface morphology, compositional homogeneity and electrical properties of barium strontium titanate (BST) thin films are investigated. The films were deposited on bare silicon and platinum coated silicon substrates by spin coating process. The precursor solution with Ba/Sr ratio 70/30 was prepared by sol‐gel synthesis using metal alkoxides. The crystalline nature and morphology of the films are found to be strongly influenced by the heating cycle adopted to form the Ba_0.7Sr_0.3TiO₃ layer. The elemental composition analysis on the surface and in‐depth confirms the stoichiometry of the films. The dielectric constant at 100 kHz and dissipation factor at room temperature is found to be 120 and 0.0236 for the films with 400nm thickness annealed at 700°C for 2 hrs. The leakage current density of the film is found to be 4x10^‐8 A/cm² from I‐V measurements.     

Some structural considerations on the perovskite‐type A1‐ySryCo1‐xFexO3‐δ solid solution series

Solid solution series of La_1‐ySr_yCo_1‐xFe_xO_3‐δ were extensively studied in the past as cathode materials for solid oxide fuel cells. However, the crystal structure behavior of La_1‐ySr_yCo_1‐xFe_xO_3‐δ solid solution series when La‐ions are replaced with another rare‐earth ion or metallic alkaline earth metal is at present not fully understood. Here we report X‐ray powder diffraction measurements performed on samples of the Sm_0.8Sr_0.2Co_1‐xFe_xO_3‐δ solid solution series. This study demonstrates that the average A‐cation radius, as well as the Fe content (x), affects the structural modification of the A_1‐ySr_yCo_1‐xFe_xO_3+δ solid solution series significantly. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)