X‐ray powder diffraction structural characterization of Ba1‐xEuxTiO3 ternary oxides

The single‐phase Ba_1‐xEu_xTiO₃ (0.1≤x≤0.4) samples have been synthesized by solid state reaction under high pressure and ‐temperature. X‐ray powder diffraction data was determined by MS Modeling using Reflex Powder Indexing technique. The Ba_1‐xEu_xTiO₃ series exhibited an interesting orthorhombic‐tetragonal‐cubic structural transformation as Eu composition increases, the distinct change of the X‐ray diffraction peak profile in the vicinity of 45.5º is characteristic of structural transformation. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of indium intercalation on various properties of MoSe2 single crystals

Indium intercalated MoSe₂ single crystals i.e. In_xMoSe₂ (0 ≤ x ≤ 1) are grown by direct vapour transport technique. These crystals are structurally characterized by X‐ray diffraction, by determining their lattice parameters ‘a’ and ‘c’ and X‐ray density. The Hall effect and thermoelectric power measurements shows that In_xMoSe₂ (0 ≤ x ≤ 1) are p‐type in nature. The direct and indirect band gap measurements are also undertaken on these semiconducting materials. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and characterization of compounds LixMn1+xFe2–2xO4 with spinel structure in the quasiternary system “LiO0,5 – MnOx – FeOx“

The thermal decomposition of freeze‐dried Li‐Mn(II)‐Fe(III)‐formate precursors was investigated by means of DTA, TG and mass spectroscopy. By the thermal treatment of the prefired precursors between 400 and 1000°C, single phase solid solutions Li_xMn_1+xFe_2–2xO₄ (0 ≤ x ≤ 1) with cubic spinel structure were obtained. To get single phase spinels, special conditions concerning the temperature T and the oxygen partial pressure p(O₂) during the synthesis are required. Because of the high reactivity of the freeze‐dried precursors, in comparison with the conventional solid state reaction, the reaction temperature can be lowered by 200°C. The cation distribution and the properties of the Li‐Mn‐ferrites were studied by chemical analysis, X‐ray powder diffraction and magnetization measurements. It was found that for high substitution rates, almost all lithium occupies the tetrahedral coordinated A‐sites of the spinel lattice AB₂O₄, while at small x‐values, lithium ions are distributed over the tetrahedral and octahedral sites. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth of the CdGa2(1‐x)Cr2xSe4 compounds by chemical transport method

Single crystals of CdGa_2(1‐x)Cr_2xSe₄ compounds for 0 ≤ x ≤ 1 have been grown by using the chemical vapor transport technique in a closed system. The transporting agent was CdCl₂ in a proportion of 0.75 mg/cc of capsule. The starting material was previously synthetized. The structural characterization on the crystals were done by powder x‐ray diffraction studies. The results show three different phases for various Cr concentration ranges: spinel structure for x ≥ 0.7, rombohedral for 0.6 ≥ x ≥ 0.5 and tetragonal for 0.4 ≥ x ≥ 0. That is, the chromium dilution in the CdCr₂Se₄ compound by Ga atoms produces very significant changes in the structural atomic arrangement. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and characterization of hexagonal ferrites BaFe12‐2xZnxTixO19 (0 ≤ x ≤ 2) by thermal decomposition of freeze‐dried precursors

Substituted barium hexaferrites, BaFe_12‐2xZn_xTi_xO₁₉ (0 ≤ x ≤ 2), have been synthesized by thermal decomposition of freeze‐dried acetate precursors. Decomposition and phase formation were investigated by means of thermal analysis, XRD and IR spectroscopy. The initially amorphous decomposed precursor reacts to the substituted hexaferrite via a spinel‐like maghemite (γ‐Fe₂O₃) and Zn/Ti containing spinel ferrites. The synthesis method allows a decrease of the reaction temperature and time, necessary for producing a single phase hexaferrite. At relative low reaction temperatures, the substitution rate x shows remarkable differences at different iron sublattices. For x ≤ 0,8 this selective substitution results in an increase of magnetization as x grows. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

X‐ray diffraction analysis of powder and thin film of (Gd1‐x Yx)2O3 prepared by sol‐gel process

The mixed oxide (Gd_1‐xY_x)₂O₃ (0.0 ≤ x ≤ 1.0) were synthesized, as powder and thin film, by a sol‐gel process. X‐ray diffraction data were collected and crystal structure and microstructure analysis were performed using Rietveld refinement method. All samples were found to have the same crystal system and formed solid solutions over the whole range of x. The cationic distribution, Gd³⁺ and Y³⁺, over the two non‐equivalent sites 8b and 24d of the space group Ia3 is found to be random for all values of (x). The lattice parameter is found to vary linearly with the composition (x). Replacing Gd³⁺ and Y³⁺ by each other introduces a systemic decrease in the x‐coordinate of cation position (24d) and slight changes in the oxygen coordinates. Crystallite size and microstrain analysis is performed along different crystallographic directions and anisotropic changes are found with the composition parameter (x). The average crystallite size ranges from 75 to 149 nm and the r.m.s strain from 0.027 to 0.068 x10^‐2. Textured Gd_1.841Y_0.159O₃ (400) buffer layers, with a high degree of alignment in both out‐plane and in‐plan, are successfully grown on cube textured Ni (001) tape substrates by sol–gel dip coating process. The resulting buffer layers are crack‐free, pinhole‐free, dense and smooth. YbBa₂Cu₃O_7‐x (YbBCO) thin film could be (00l) epitaxially grown on the obtained buffer layer using sol–gel dipping technique. (© 2007 WILEY ‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structure,microstructure and magnetic properties of mixed rare earth oxide (Dy1‐xErx)2O3

The mixed rare earth oxide (Dy_1‐xEr_x)₂O₃ (0.0 ≤ x ≤ 1.0) were synthesized by a sol–gel process. X‐ray and neutron diffraction data were collected and crystal structure and microstructure analyses were performed using Rietveld refinement method. All samples were found to have the same crystal structure and formed solid solutions over the whole range of x. Preferential cationic distribution is found for all samples but with different extent with Dy³⁺ preferring the 8b among the two non‐equivalent sites 8b and 24d of the space group Ia3. The lattice parameter is found to vary linearly with the composition x and a systematic variation is found in the r.m.s microstrain . Magnetization measurements were done in the temperature range 5‐300 K and a behavior in accordance with Curie‐Weiss law was found. Anomalous concentration dependence is found in magnetic susceptibility which is ascribed to the concentration dependence of effective crystal field combined with the contribution of ⁴I_15/2 and ⁶H_15/2 manifold at elevated temperature. The effective magnetic moments μ_eff is found to decrease linearly with composition parameter x, except for sample x=0.5 where the magnetization is enhanced. The Curie‐Weiss paramagnetic temperatures indicated antiferromagnetic interaction. These magnetic results are discussed in view of the cationic distribution. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Twin Structure of (La,Nd)GaO3 Solid Solutions

For La_1‐xNd_xGaO₃ crystals the La‐Nd substitution leads to decrease of spontaneous strains and for composition with x≈0.32 the six possible twin states of orthorhombic phase (m3mFmmm) may be degenerated in three twin states inhered in m3mF4/mmm species when a distorted perovskite pseudocell becomes tetragonal. The {110} and {112} reflection twins and axial twins with compositional planes close to (211) and (21‐1) (S‐walls) were identified in La_1‐xNd_xGaO₃ (x=0.07, 0.12, 0.20) solid solutions crystals. All observed twins are typical for crystals with GdFeO₃ type perovskite‐like structure. It has been shown that for x≤0.2 and x≥0.5 orientations of S‐walls weakly depend on La/Nd ratio, whereas in the range of 0.2<x<0.5 they depend strongly on the solid solution composition. The tilt angle between two twin states across twin boundary in La_1‐xNd_xGaO₃ (x<0.6) solid solutions is smaller than that between two twins in pure LaGaO₃ or NdGaO₃.     

Influence of the temperature and the oxygen partial pressure on the phase formation in the system Cu – Fe – O

Copper iron oxides, Cu_1‐xFe_2+xO₄ (0 ≤ x ≤ 0.5), have been synthesized by thermal oxidation of copper ‐ iron mixtures. In this process, the phase formation and the phase stability were investigated as function of the temperature (800°C – 1200°C) and the oxygen partial pressure (1.013 x 10¹ – 1.013 x 10⁵ Pa). The phase formation starts with the reaction of the metallic components to simple oxides (Fe₃O₄, Fe₂O₃, CuO). From these simple oxides, the formation of complex oxides requires a minimum temperature of 800°C. The synthesis of single phase spinel compounds Cu²⁺_1‐2x Cu¹⁺_xFe_2+xO_4±δ is realized for 0.1 ≤ x ≤ 0.5, using specific temperature – p(O₂) – conditions for a given value of x. Remarkably, to achieve our goal, we found that the increase of x implies that of the reaction temperature and/or a decrease of the p(O₂) in the reaction gas stream. Besides, a single phase spinel CuFe₂O₄ does not exist in the temperature / p(O₂)‐field investigated. Using the results of XRD ‐ phase analysis, T ‐ p(O₂) – x – diagrams were constructed. These diagrams allow the prediction of phase compositions expected for different synthesis conditions. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of rapid thermal annealing on Zn1‐xCdxO layers grown by radio‐frequency magnetron co‐sputtering

Zn_1‐xCd_xO layers were deposited on the sapphire substrate using the radio‐frequency magnetron co‐sputtering system. The grown Zn_1‐xCd_xO layers were carried out in the post‐annealing treatment for 1 min at the 800 °C oxygen‐ambient by the rapid thermal annealing (RTA) method. X‐ray diffraction (XRD) experiment shows that the Zn_1‐xCd_xO layers are changed from the single phase of the hexagonal structure at 0≤x ≤0.08 to the double phase of hexagonal‐and‐cubic structure at x =0.13. Thus, the maximum Cd‐composition ratio with the hexagonal structure was found out to be x =0.08. Also, the crystallinity of Zn_1‐xCd_xO layers at x =0.13 was remarkably improved by the RTA annealing treatment. This crystal quality improvement was thought to be associated with the relaxation of the compressive strain remaining in the Zn_1‐xCd_xO layers. Therefore, the results of XRD and transmittance lead that the crystal quality of the Zn_1‐xCd_xO layers forming the hexagonal ZnO phase is better than that forming the cubic CdO phase. Consequently, the reliable formation and the crystallinity of the Zn_1‐xCd_xO layers were achieved by using the RTA method of short‐time thermal‐annealing at the high temperature. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

We present the growth optimization and the doping by the metal organic chemical vapor deposition of lattice-matched Al_0.82In_0.18N bottom optical confinement layers for edge emitting laser diodes. Due to the increasing size and density of V-shaped defects in Al_1?xIn_xN with increasing thickness, we have designed an Al_1?xIn_xN/GaN multilayer structure by optimizing the growth and thickness of the GaN interlayer. The Al_1?xIn_xN and GaN interlayers in the multilayer structure were both doped using the same SiH₄ flow, while the Si levels in both layers were found to be significantly different by SIMS. The optimized 8×(Al_0.82In_0.18N/GaN=54/6 nm) multilayer structures grown on free-standing GaN substrates were characterized by high resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy, along with the in-situ measurements of stress evolution during growth. Finally, lasing was obtained from the UV (394 nm) to blue (436 nm) wavelengths, in electrically injected, edge-emitting, cleaved-facet laser diodes with 480 nm thick Si-doped Al_1?xIn_xN/GaN multilayers as bottom waveguide claddings.     

Effect of crystal disorder on linewidth of the Raman modes in GaS1‐xSex layered mixed crystals

The linewidths of Raman‐active intralayer compressional modes in GaS_1‐xSe_x layered mixed crystals (0 ≤ x ≤ 1) have been measured in the 10‐300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three‐phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of the intralayer phonon lines with temperature. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Preparation and investigation of (CuInSe2)x(2ZnSe)1‐x and (CuInTe2)x(2ZnTe)1‐x solid solution crystals

The (CuInSe₂)_x(2ZnSe)_1‐x and (CuInTe₂)_x(2ZnTe)_1‐x solid solution crystals prepared by Bridgman method and chemical vapor transport have been studied. The nature of the crystalline phases, the local structure homogeneity and composition of these materials have been investigated by X‐ray diffraction (XRD) and Electron Probe Microanalysis (EPMA) methods. The analysis revealed the presence of chalcopyrite‐sphalerite phase transition between 0.6 ≤ X ≤ 0.7. Lattice constants, value of σ position parameter and bond length between atoms were also calculated. It was found that the lattice parameters exhibit a linear dependence versus composition. The transmission spectra of solid solution crystals in the region of the main absorption edge were studied. It was established that the optical band gap of these materials changes non‐linearly with the X composition. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Multimode phonon structure of Be‐containing II ‐ VI mixed crystals determined by IR spectroscopic ellipsometry

Spectroscopic ellipsometry in the infrared spectral range 250‐5000 cm^‐1 is used for analysis of the dielectric response of Zn_1‐x‐yBe_xMg_ySe and Zn_1‐x‐yBe_xMn_ySe crystals grown by a high‐pressure Bridgman method. Ellipsometric spectra display features in the spectral range 390‐500 cm^‐1 associated with BeSe‐type phonon modes. In the optical spectra of Zn_1‐x‐yBe_xMg_ySe crystals both BeSe‐type and MgSe‐type lattice absorption bands are detected. The MgSe‐like modes are located at approximately 300 cm^‐1. The complex dielectric functions can be reproduced using a model with two or three and one or two classical damped oscillators corresponding to the BeSe‐like and the MgSe‐like transverse‐optical phonon modes, respectively. The frequencies of longitudinal‐optical phonons have been derived from the dielectric loss functions. A red‐shift of the BeSe‐like phonons frequencies with a mean rate 0.42 cm^‐1 (0.50 cm^‐1) per mole percent of Mg (Mn) incorporated to the alloy has been found for examined concentration range x, y ≤ 0.25. A noticeable damping the intensities of BeSe‐type modes with increasing fraction of Mg and Mn dopant is observed in comparison to the strengths of BeSe‐type modes in Zn_1‐xBe_xSe crystals. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of temperature and isomorphic atom substitution on optical absorption edge of TlInS2xSe2(1‐x) mixed crystals (0.25 ≤ x ≤ 1)

The optical properties of the TlInS_2xSe_2(1‐x)mixed crystals (0.25 ≤ x ≤ 1) have been investigated through the transmission and reflection measurements in the wavelength range of 400–1100 nm. The optical indirect band gap energies were determined by means of the analysis of the absorption data. It was found that the energy band gaps decrease with the increase of selenium atoms content in the TlInS_2xSe_2(1‐x)mixed crystals. The transmission measurements carried out in the temperature range of 10–300 K revealed that the rates of change of the indirect band gaps with temperature are γ = –9.2×10^–4 eV/K, –6.1×10^–4 eV/K, –4.7×10^–4 eV/K and –5.6×10^–4 eV/K for TlInS₂, TlInS_1.5Se_0.5, TlInSSe and TlInS_0.5Se_1.5 crystals, respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Correlation of structure and properties of melt spun PbSn30Sb7Cu quaternary alloys

Using x‐ray diffractometry, double bridge method and dynamic resonance technique structure, electrical resistivity, elastic modulus, internal friction and thermal diffusivity of Pb_63‐xSn₃₀Sb₇Cu_x [x=0 or x≤2.5] quaternary melt spun alloys have been investigated. Adding Cu to PbSn₃₀Sb₇ decreases electrical resistivity, elastic modulus and internal friction. The PbSn₃₀Sb₇Cu₁ melt spun alloy has better properties as bearing alloy, such as low electrical resistivity, high elastic modulus and adequate internal friction, compared with the Pb₈₈Sn₁₀Cu₂ alloy used for automotive applications (FIAT Normalizzazione). That means, it has good properties as lead free (non‐toxic) bearing alloy. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth,structure and thermal properties of CuAlxGa1‐xSe2 alloys

Ingots of the CuAl_xGa_1‐xSe₂ (0 ≤ x ≤ 1) alloys system were prepared by direct fusion of the stoichiometric mixture of the elements. The analysis of X‐ray Powder Diffraction data showed the presence of one single phase with chalcopyrite tetragonal structure at room temperature for all the studied compositions. The lattice parameters, a and c, and the bond lengths were calculated. The phase transition temperatures were obtained by the onset method from Differential Thermal Analysis measurements performed on samples sealed in evacuated quartz ampoules. Fusion or transition enthalpies were determined from the area of the corresponding DTA peak. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure refinement of CuxAg1‐xInTe2 bulk material determined from X‐ray powder diffraction data using the Rietveld method

The influence of the Cu‐content in the quaternary compounds Cu_xAg_1‐xInTe₂ (0 ≤ x ≤1) on the structural properties of the bulk material was discussed. Bulk ingot materials of Cu_xAg_1‐xInTe₂ solid solutions (x = 0.0, 0.25, 0.50, 0.75 and 1.0) have been synthesized by fusion of the constituent elements in the stoichiometric ratios in vacuum‐sealed silica tubes. The materials compositions were confirmed by using energy dispersive analysis of X‐rays (EDAX). X‐ray powder diffraction measurements were performed for all the prepared samples at 300 K in step scanning mode. The analysis of X‐ray data has indicated that the crystal structure of the prepared materials with different compositions is single‐phase polycrystalline materials corresponding to the tetragonal chalcopyrite structure with space group I 2d. The crystal structural parameters were refined by Rietveld method using the Full Prof program. The refined lattice constants (a and c), anion positional parameter, u, and the determined bond distances and angles were found to vary with composition, x, attaining zero tetragonal distortion at x ≈ 0.75, which corresponds to an ideal tetragonal unit cell. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

ESR and optical absorption of cupric ion in borate glasses

ESR and optical absorption of Cu²⁺ were measured in xNa₂O(100?x)B₂O₃ (1 ≤ x ≤ 75), x ZnO(100?x)B₂O₃ (46 ≤ x ≤ 64) and x Pb(100?x)b₂O₃ (20 ≤ x ≤ 75) glasses, where x is expressed in mol.%. Spin hamiltonian parameters and ligand field absorption energy changed abruptly in the regions of 15 ≤ x ≤ 23 and 37 ≤ x ≤ 55 in the soda system, while both parameters were hardly dependent upon the glass composition in zinc and lead systems. The magnitude of micro-environmental fluctuation of Cu²⁺-complexes in the glasses was estimated qualitatively and correlated with the distribution of the strength of π-bonding between cupric ion and oxygen in the glass. Typical network modifiers and intermediates behaved differently, especially in the composition region of invert glass; the large deformation of the coordination sphere of Cu²⁺ in lead glasses due to the stronger PbO bond resulted in the large distribution of $\text{g}{}_{\mathrm{}}$. The situation was reverse in the case of soda glasses.     

Effect of isomorphic atom substitution on the refractive index and oscillator parameters of TlInS2xSe2(1‐x) (0.25 ≤ x ≤ 1) layered mixed crystals

The optical properties of TlInS_2xSe_2(1‐x)mixed crystals (0.25 ≤ x ≤ 1) have been studied at room temperature through the transmittance and reflectivity measurements in the wavelength range of 400–1100 nm. The spectral dependence of the refractive index for all compositions of studied crystals were obtained. The dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single‐effective‐oscillator model. The compositional dependencies of refractive index dispersion parameters: oscillator energy, dispersion energy and zero‐frequency refractive index were revealed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)