Adsorption of L-cysteine on rutile TiO2(110)

We have used X-ray photoelectron spectroscopy to study the adsorption of L-cysteine on a rutile TiO₂(110) surface at room temperature and ? 65 °C. For the molecules in direct contact with the surface our results suggest that the molecules bind dissociatively to the fivefold-coordinated Ti atoms of the surface through their deprotonated carboxylic groups. A second, dissociative interaction occurs between the molecular thiol groups and the surface. It is attributed to a dissociative bond to the bridging oxygen vacancies. Most likely, the thiol groups are deprotonated and a bond is formed between the thiolates and defects. In an alternative scenario, the C–S bond is cleaved and atomic sulfur binds to the defects. With regard to the molecular amino groups, they remain neutral at the lowest investigated coverages (0.3–0.5 ML), but already starting from around 0.7 ML nominal coverage protons are being transferred to them. The fraction of protonated amino groups increases with coverage and becomes dominating in multilayers prepared at room temperature and ? 65 °C. In these multilayers the carboxylic groups are deprotonated.     

H_2O分子在锐钛矿型TiO_2(101)表面的吸附特性与微观机理

本文采用基于密度泛函理论(DFT)的平面波超软赝势方法,模拟计算H2O分子在锐钛矿型TiO2(101)无氧空位和有氧空位表面的吸附行为,对吸附能、吸附距离、吸附前后表面电子态密度以及光学性质分别进行分析,结果表明:H2O分子在无氧空位锐钛矿型TiO2(101)表面不容易被吸附,在含有氧空位缺陷的表面容易被吸附;稳定吸附后,H2O分子平面垂直于TiO2表面;负电中心(O端)距空位越近,吸附越稳定,且氧空位浓度越高,吸附效果越明显;通过电子态密度分析发现,H2O分子吸附于含氧空位的表面后,由于H2O分子中O原子的2p孤对电子掺入,新峰值在费米能级附近出现,提高了材料在可见光低能区域的跃迁几率,明显改善了对可见光的吸收系数和反射率,光学气敏传感特性显著.     

H2O分子在锐钛矿型TiO2(101)表面的吸附特性与微观机理

近年来,随着着光纤技术和光集成技术的发展,光学气敏湿度传感器被广泛应用,在气敏传感材料领域中,由于TiO2具有灵敏度高、响应时间快等优点而受到广泛关注。本文采用基于密度泛函理论(DFT)的平面波超软赝势方法,模拟计算H2O分子在锐钛矿型TiO2(101)无氧空位和有氧空位表面的吸附行为,对吸附能、吸附距离、吸附前后表面电子态密度以及光学性质分别进行分析,结果表明：H2O分子在无氧空位锐钛矿型TiO2(101)表面不容易被吸附,在含有氧空位缺陷的表面容易被吸附;稳定吸附后,H2O分子平面垂直于TiO2表面;负电中心（O端）距空位越近,吸附越稳定,且氧空位浓度越高,吸附效果越明显;通过电子态密度分析发现,H2O分子吸附于含氧空位的表面后,由于H2O分子中O原子的2p孤对电子掺入,在费米能级附近出现新峰值,提高了材料在可见光低能区域的跃迁几率,明显改善了对可见光的吸收系数和反射率,光学气敏传感特性显著。     

Adsorption of H2O on Al(111)

The adsorption of H₂O on Al(111) has been studied by ESDIAD (electron stimulated desorption ion angular distributions), LEED (low energy electron diffraction), AES (Auger electron spectroscopy) and thermal desorption in the temperature range 80–700 K. At 80 K, H₂O is adsorbed predominantly in molecular form, and the ESDIAD patterns indicate that bonding occurs through the O atom, with the molecular axis tilted away from the surface normal. Some of the H₂O adsorbed at 80 K on clean Al(111) can be desorbed in molecular form, but a considerable fraction dissociates upon heating into OH_ads and hydrogen, which leaves the surface as H₂. Following adsorption of H₂O onto oxygen-precovered Al(111), additional OH_ads is formed upon heating (perhaps via a hydrogen abstraction reaction), and H₂ desorbs at temperatures considerably higher than that seen for H₂O on clean Al(111). The general behavior of H₂O adsorption on clean and oxygen-precovered Al(111) (θ_O ? monolayer) is rather similar at low temperature, but much higher reactivity for dissociative adsorption of H₂O to form OH _adsis noted on the oxygen-dosed surface around room temperature.     

Titanium overlayers on TiO2(110)

Non-stoichiometric, Ti-rich TiO₂(110) surfaces were prepared by evaporation of Ti on stoichiometric TiO₂(110). Changes in the spectra of core levels, valence bands, Auger emissions, electron energy losses, conductivities and work functions were investigated during overlayer formation in the monolayer range and during subsequent annealing of non-stoichiometric surfaces at high temperatures and high oxygen partial pressures. These annealing procedures make it possible to restore the ideal stoichiometry of TiO₂(110). The results are discussed quantitatively by calculating concentrations of (sub)surface intrinsic defects in a space-charge layer model.     

Chemisorption of H2 and CO on stoichiometric and defective TiO2(110)

Chemisorption of H₂ and CO was studied on stoichiometric and defective TiO₂(110) surfaces by means of changes in surface conductivity, work function, XPS, AES, LEED and ELS. Defective surfaces were prepared by thermal pretreatment under thermodynamically controlled conditions and by evaporation of excess Ti. The results are discussed in a modified charge transfer model in terms of partial charges and dipole moments formally attributed to adsorption complexes.     

Adsorption of H2 and CO on clean and oxidized (110) Pt

Binding states and sticking coefficients of CO and H₂ on clean and oxide covered (110) planes of Pt are examined using flash desorption mass spectrometry to characterize binding states and Auger electron spectroscopy (AES) to characterize oxide densities. It is found that on the oxide both adsorbates have new binding states with significantly higher binding energies than on the clean surface. For H₂ the binding states associated with the clean surface are also shifted to higher energies as the oxide coverage increases. The oxide state for H₂ desorbs with first order kinetics, and isotope exchange experiments are used to examine exchange between isotopes and between states. The initial sticking coefficients for CO are 1.0 and 0.85 on clean and oxidized surfaces, and the initial sticking coefficient for H₂ increases from 0.15 on the clean surface to 0.28 on the oxidized surface. Enhanced bonding on the oxide is interpreted in terms of models involving microfacets, electronic structure alteration, and compound formation.     

The location of excess electrons on H2O/TiO2(110) surface and its role in the surface reactions

Excess electrons play a key role in many of the properties of Titanium dioxide (TiO₂). Understanding their behaviour is important for improving the performance of TiO₂ in energy-related applications. Here, we describe a DFT + U study of the locations of the unpaired electron (UPE) on rutile TiO₂(110) (R-TiO₂(110)) surface and H₂O/R-TiO₂(110) surface. Our results show that the subsurface are preferred with R-TiO₂(110) surface. In contrast to previous studies, we find that the UPE tends to migrate to the surface H₂O-Ti_5c (the five-coordinated titanium (Ti_5c) at surface with H₂O adsorption) with the increasing of H₂O coverage and UPE concentration. In addition, we have shown that the UPE plays an important role in the O-H bond dissociation and other important elementary reactions in photo-catalytic H₂O dissociation on R-TiO₂(110) such as H, OH and H₂ desorption. Specifically, it enhances the O-H bond dissociation, as well as H and H₂ desorption from bridging hydroxyl and Ti_5c-OH (the Ti_5c with OH adsorption), but hinders the OH and H desorption from Ti_5c. We believe our results afford a further understanding of the adsorbent dependent UPE migration, and the role of UPE in the surface reactions.     

Adsorption of O on Mo(110) surface from first-principles calculation

First-principles calculations based on density functional theory (DFT) have been performed to study O adsorption in on-surface and subsurface sites. For different coverages, hollow site is found to be the most stable on-surface adsorption site. For the subsurface adsorption at the bare Mo surface, the adsorption energies are found to be higher than those at the on-surface sites, suggesting that these sites are less stable. However, the presence of preadsorbed O overlayer enhances the binding energy of subsurface adsorption, particularly for the adsorption of O at octahedral site. Further, vibrational frequencies, work-function and density of states are presented for O adsorption in on-surface sites.     

Direct evidence for ethanol dissociation on rutile TiO2(110)

We have studied the interaction of ethanol with reduced TiO(2)(110)-(1 × 1) by high-resolution scanning tunneling microscopy (STM) measurements and density functional theory calculations. The STM data revealed direct evidence for the coexistence of molecularly and dissociatively adsorbed ethanol species on surface Ti sites. In addition, we found evidence for dissociation of ethanol at bridge-bonded O vacancies. The density functional theory calculations support these findings and rationalize the distinct diffusion behaviors of molecularly and dissociatively adsorbed ethanol species, as revealed in time-lapsed STM images.     

Si(001)-(2*2*1):H表面O2吸附的密度泛函理论研究

建立了一种计算Si(001)-(2×2×1):H表面O2吸附的理论模型．在周期性边界条件下,采用基于密度泛函理论广义梯度近似的超软赝势法对Si(001)-(2×2×1):H表面O2吸附进行了第一性研究．通过占位能的计算,得到了Si(001)-(2×2×1):H表面O2的最佳吸附位置．计算结果表明吸附后的反应产物应为Si=O和H2O,从理论上支持了D．Kovalev等人提出反应机制．     

Pyrocatechol as a surface capping molecule on rutile TiO2 (110)

A ‘cap and dip’ method of adsorbing ruthenium di-2,2′-bipyridyl-4,4′-dicarboxylic acid diisocyanate (N3 dye) on a rutile TiO₂ (110) surface was investigated using pyrocatechol as a capping molecule. This method involves cleaning the rutile surface in ultra-high vacuum (UHV), depositing pyrocatechol onto the surface to ‘cap’ the adsorption sites, removing from vacuum, ‘dipping’ in an N3 dye solution and returning to vacuum. Photoemission measurements following the return of the crystal to vacuum suggest that the pyrocatechol keeps the surface free from contamination on exposure to atmosphere. Photoemission spectra also indicate that the pyrocatechol capping molecules are replaced by the N3 dye in solution and that the N3 dye is adsorbed intact on the rutile TiO₂ (110) surface. This technique may allow other large molecules, which are thermally unstable to evaporation in UHV, to be easily deposited onto TiO₂ surfaces.     

Photoemission study of the adsorption of O2, CO and H2 on GaAs(110)

Ultraviolet photoemission spectroscopy with hv < 12 eV has been used to study O₂, CO, and H₂ adsorption on the cleaved GaAs(110) face. It was found that O₂ exposures above 10⁵ L(1LM = 10^?6 Torr sec) were required to produce changes in the energy distribution curves. At O₂ exposures of 10⁶ L on p-type and 10⁸ L on n-type an oxide peak is observed in the EDC's located 4 eV below the valence band maximum. On p-type GaAs, O₂ exposures cause the Fermi level at the surface to move up to a point 0.5 eV above the valence band maximum, while on n-type GaAs O₂ exposures do not remove the Fermi level pinning caused by empty surface states on the clean GaAs. CO was found to stick to GaAs, but to desorb over a period of hours, and not to change the surface Fermi level position. H₂ did not affect the EDC's, but atomic H lowered the electron affinity and raised the surface position of the Fermi level on p-type GaAs. A correlation is found in which gases which stick to the GaAs cause an upward movement of the Fermi level at the surface on p-type GaAs, while gases which stick only temporarily do not change the surface position of the Fermi level.     

Methylene bromide chemistry and photochemistry on rutile TiO2(110)

The chemistry and photochemistry of methylene bromide (CD₂Br₂) on the rutile TiO₂(110) surface was probed using temperature programmed desorption (TPD). CD₂Br₂ desorbed in three desorption states at 145, 160 and 250 K tentatively assigned to desorption from the multilayer, from an η¹-CD₂Br₂ species and a bridging η²-CD₂Br₂ species, respectively. The latter two TPD states presumably involve binding of CD₂Br₂ molecules to the surface through Br coordination at five-coordinate Ti⁴⁺ surface sites. The 160 and 250 K TPD states saturated at coverages of 1.0 and 0.33 ML, respectively, where 1 ML is equivalent to the surface Ti⁴⁺ site density (5.2 × 10¹⁴ cm^? 2). No thermal decomposition of CD₂Br₂ was observed on either the clean surface or with preadsorbed O₂. UV irradiation of CD₂Br₂ on TiO₂(110) resulted in predominately photodesorption, with trace amounts of photodecomposition evidenced in TPD. The rate of CD₂Br₂ photodesorption from TiO₂(110) occurred with a low cross section (~ 2 × 10^? 21 cm²) similar to that expected from direct optical excitation of CD₂Br₂. This observation suggests that charge carriers generated in TiO₂(110) were no more effective in activating adsorbed CD₂Br₂ molecules than would be expected through direct molecular excitation. These findings suggest that photocatalytic destruction of halocarbons such as CD₂Br₂ on TiO₂ may preferentially occur though indirect processes (such as OH radical attack) as opposed to direct electron transfer processes involving charge carriers generated in TiO₂ by bandgap excitation.