Hybridized nature of pseudogap in Kondo insulators CeRhSb and CeRhAs

We studied the electronic structure of Kondo insulators CeRhSb and CeRhAs using high-resolution photoemission spectroscopy. We found that the 4f-derived density of states shows a depletion (pseudogap) at E(F) in contrast to metallic Kondo materials. It was found that the size of the f pseudogap is smaller than that of conduction electrons ( c pseudogap) while both scale well with the Kondo temperature. The present results indicate that the hybridization between 4f and conduction electrons near E(F) is essential for the Kondo gap in the Ce-based compounds.     

Single-particle spectral function of the Hubbard chain: frustration induced

The one-electron spectral function of a frustrated Hubbard chain is computed by making use of the cluster perturbation theory. The spectral weight we found turns out to be strongly dependent on the frustrating next-nearest-neighbor hopping t'. A frustration induced pseudogap arises when the system evolves from a gapful Mott insulator to a gapless conductor for an intermediate value of the frustration parameter |t'|. Furthermore, the opening of a pseudogap in the density of states already in the metallic side leads to a continuous opening of the true gap in the insulator. For the hole-doped case, the pseudogap is pinned at the Fermi energy, while the Mott gap is shifted in energy with increasing Hubbard interaction U. The separation of the pseudogap and Mott gap in the hole-doped system demonstrates the validity of the existence of a pseudogap.     

Pseudogap in doped Mott insulators is the near-neighbor analogue of the Mott gap

We show that the strong-coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single-particle spectrum below a characteristic temperature. The pseudogap arises because any singly occupied site not immediately neighboring a hole experiences a maximum energy barrier for transport equal to t(2)/U, t the nearest-neighbor hopping integral and U the on-site repulsion. The resultant pseudogap cannot vanish before each lattice site, on average, has at least one hole as a near neighbor. The ubiquity of this effect in all doped Mott insulators suggests that the pseudogap in the cuprates has a simple origin.     

The low temperature spectral weight transfer problem in Kondo insulators

In this paper we address the problem of the spectral weight transfer in Kondo insulators (KI). We employ the X-boson approach for the periodic Anderson model, in the U →∞ limit. We calculate the two energy gaps of the system analytically: the indirect gap, Δ_ind = E_g ≃ E_mir, present in the density of states, and the direct one Δ_dir, associated with the minimum energy necessary to produce inter-band transitions. We find that the optical behavior of the system is governed by two energy scales: one of low frequency, characterized by E_g ≃ E_mir, in the mid-infrared region (MIR), which is a reminiscent of the heavy fermion E_mir peak, that appears in Kondo insulators as a broad maximum in the MIR region and that controls the low temperature transport properties, the gap opening in optical conductivity and the formation of the Drude peak, at ω = 0, in the intermediate temperature range. The other energy scale appears at high frequencies, and is characterized by the direct gap Δ_dir. According to our results, this peak controls the anomalous redistribution of spectral weight in the optical conductivity. We apply the theory in order to study the Kondo insulator FeSi, and we calculate the optical conductivity of the system and the spectral weight transfer in the optical conductivity.     

Thermodynamics and phase diagram of high temperature superconductors

Thermodynamic quantities are derived for superconducting and pseudogap regimes by taking into account both amplitude and phase fluctuations of the pairing field. In the normal (pseudogap) state of the underdoped cuprates, two domains have to be distinguished: near the superconducting region, phase correlations are important up to temperature T(phi). Above T(phi), the pseudogap region is determined only by amplitudes, and phases are uncorrelated. Our calculations show excellent quantitative agreement with specific heat and magnetic susceptibility experiments on cuprates. We find that the mean field temperature T0 has a similar doping dependence as the pseudogap temperature T(*), whereas the pseudogap energy scale is given by the average amplitude above T(c).     

Andreev and single-particle tunneling spectra of underdoped cuprate superconductors

We study tunneling spectroscopy between a normal metal and an underdoped cuprate superconductor modeled by a phenomenological theory in which the pseudogap is a precursor to the undoped Mott insulator. In the low barrier tunneling limit, the spectra are enhanced by Andreev reflection only within a voltage region of the small superconducting energy gap. In the high barrier tunneling limit, the spectra show a large energy pseudogap associated with single particle tunneling. Our theory semiquantitatively describes the two gap behavior observed in tunneling experiments.     

Electric control of emergent magnonic spin current and dynamic multiferroicity in magnetic insulators at finite temperatures

Conversion of thermal energy into magnonic spin currents and/or effective electric polarization promises new device functionalities. A versatile approach is presented here for generating and controlling open circuit magnonic spin currents and an effective multiferroicity at a uniform temperature with the aid of spatially inhomogeneous, external, static electric fields. This field applied to a ferromagnetic insulator with a Dzyaloshinskii–Moriya type coupling changes locally the magnon dispersion and modifies the density of thermally excited magnons in a region of the scale of the field inhomogeneity. The resulting gradient in the magnon density can be viewed as a gradient in the effective magnon temperature. This effective thermal gradient together with local magnon dispersion result in an open-circuit, electric field controlled magnonic spin current. In fact, for a moderate variation in the external electric field the predicted magnonic spin current is on the scale of the spin (Seebeck) current generated by a comparable external temperature gradient. Analytical methods supported by full-fledge numerics confirm that both, a finite temperature and an inhomogeneous electric field are necessary for this emergent non-equilibrium phenomena. The proposal can be integrated in magnonic and multiferroic circuits, for instance to convert heat into electrically controlled pure spin current using for example nanopatterning, without the need to generate large thermal gradients on the nanoscale.     

Mechanism of Pseudogap Detected by Electronic Raman Scattering： Phase Fluctuation or Hidden Order？

We study the electronic Raman scattering in the cuprates to distinguish the two possible scenarios of the pseudogap normal state. In one scenario, the pseudogap is assumed to be caused by phase fluctuations of the preformed Cooper pairs. We find that pair-breaking peaks appear in both the B1g and B2g Raman channels, and they axe smeared and tend to shift to the same energy with the increasing strength of phase fluctuations. Thus both channels reflect the same pairing energy scale, irrespectively of the doping level. In another scenario, the pseudogap is assumed to be caused by a hidden order that competes with the superconducting order. As an example, we assume that the hidden order is the d-density-wave （DDW） order. We find analytically and numerically that in the DDW normal state there is no Raman peak in the B2g channel in a tight-binding model up to the second nearest-neighbor hopping, while the Raman peak in the Big channel reflects the energy gap caused by the DDW order. This behavior is in agreement with experiments in the pseudogap normal state. To gain further insights, we also calculate the Raman spectra in the DDW＋SC state. We study the doping and temperature dependence of the peak energy in both channels and find a two-gap behavior, which is in agreement with recent Raman experiments. Therefore, our results shed light on the hidden order scenario for the pseudogap.     

Spin and charge order in Mott insulators and d-wave superconductors

We argue that aspects of the anomalous, low temperature, spin and charge dynamics of the high temperature superconductors can be understood by studying the corresponding physics of undoped Mott insulators. Such insulators display a quantum transition from a magnetically ordered Néel state to a confining paramagnet with a spin gap; the latter state has bond-centered charge order, a low energy S=1 spin exciton, confinement of S=1/2 spinons, and a free S=1/2 moment near non-magnetic impurities. We discuss how these characteristics, and the quantum phase transitions, evolve upon doping the insulator into a d-wave superconductor. This theoretical framework was used to make a number of predictions for STM measurements and for the phase diagram of the doped Mott insulator in an applied magnetic field.     

Disorder and pseudogap in strongly correlated systems: Phase diagram in the DMFT + Σ approach

The influence of disorder and pseudogap fluctuations on the Mott insulator-metal transition in strongly correlated systems has been studied in the framework of the generalized dynamic mean field theory (DMFT + Σ approach). Using the results of investigations of the density of states (DOS) and optical conductivity, a phase diagram (disorder-Hubbard interaction-temperature) is constructed for the paramagnetic Anderson-Hubbard model, which allows both the effects of strong electron correlations and the influence of strong disorder to be considered. Strong correlations are described using the DMFT, while a strong disorder is described using a generalized self-consistent theory of localization. The DOS and optical conductivity of the paramagnetic Hubbard model have been studied in a pseudogap state caused by antiferromagnetic spin (or charge) short-range order fluctuations with a finite correlation length, which have been modeled by a static Gaussian random field. The effect of a pseudogap on the Mott insulator-metal transition has been studied. It is established that, in both cases, the static Gaussian random field (related to the disorder or pseudogap fluctuations) leads to suppression of the Mott transition, broadening of the coexistence region of the insulator and metal phases, and an increase in the critical temperature at which the coexistence region disappears.     

Central peak in the pseudogap of high T<Subscript> c</Subscript> superconductors

We study the effect of antiferromagnetic (AF) correlations in the three-band Emery model, with respect to the experimental situation in weakly underdoped and optimally doped BSCCO. In the vicinity of the vH singularity of the conduction band there appears a central peak in the middle of a pseudogap, which is in an antiadiabatic regime, insensitive to the time scale of the mechanism responsible for the pseudogap. We find a quantum low-temperature regime corresponding to experiment, in which the pseudogap is created by zero-point motion of the magnons, as opposed to the usual semiclassical derivation, where it is due to a divergence of the magnon occupation number. Detailed analysis of the spectral functions along the (π,0)–(π,π) line show significant agreement with experiment, both qualitative and, in the principal scales, quantitative. The observed slight approaching-then-receding of both the wide and narrow peaks with respect to the Fermi energy is also reproduced. We conclude that optimally doped BSCCO has a well-developed pseudogap of the order of 1000 K. This is only masked by the narrow antiadiabatic peak, which provides a small energy scale, unrelated to the AF scale, and primarily controlled by the position of the chemical potential.     

Frontispiece: Photonic Floquet topological insulators in atomic ensembles

The feasibility of realizing a photonic Floquet topological insulator (PFTI) in an atomic ensemble is demonstrated by Yiqi Zhang et al. (pp. 331–338) . The interference of three coupling fields will split energy levels periodically, to form a periodic refractive index structure with honeycomb profile that can be adjusted by different frequency detunings and intensities of the coupling fields. This in turn will affect the appearance of Dirac cones in momentum space. When the honeycomb lattice sites are helically ordered along the propagation direction, gaps open at Dirac points, and one obtains a PFTI in an atomic vapor. An obliquely incident beam will be able to move along the zigzag edge of the lattice without scattering energy into the PFTI, due to the confinement of edge states. The appearance of Dirac cones and the formation of a photonic Floquet topological insulator can be shut down by the third‐order nonlinear susceptibility and opened up by the fifth‐order one.     

Low energy dynamics of two-dimensional lateral tunnel junctions

We report on the low temperature tunneling characteristics of two-dimensional lateral tunnel junctions (2DLTJs) consisting of two coplanar two-dimensional electron systems separated by an in-plane tunnel barrier. The tunneling conductance of the 2DLTJ exhibits a characteristic dip at small voltages—consistent with the phenomenon of zero-bias anomaly in low-dimensional tunnel junctions—and a broad conductance peak at the Coulombic energy scale. The conductance peak remains robust under magnetic fields well into the quantum Hall regime. We identify the broad conductance maxima as the signature of the pseudogap in the tunneling density of states below the characteristic Coulomb interaction energy of the 2DLTJ.     

Insulator-superconductor-metal transitions induced by spin fluctuations in the paramagnetic phase of doped insulators

AbstractThe band structure of cuprates as a doped 2D insulator is modeled assuming that the excess charge carriers are associated with the corresponding substitution atoms, and the phase diagram of the paramagnetic states as a function of the degree x of doping at zero temperature is studied. The Hamiltonian contains electronic correlations on impurity orbitals and hybridization between them and the initial band states of the insulator. It is shown that the change in the electronic structure of a doped compound includes the formation of impurity bands of distributed and localized electronic states in the initial insulator gap. It is established that in the case of one excess electron per substitution atom the spin fluctuations (1) give rise to an insulator state of the doped compound for x < x _thr, 1, (2) lead to a superconducting state for x _thr, 1 < x < x _thr, 2, and (3) decay as x > x _thr, 2 increases further, and the doped compound transforms into a paramagnetic state of a “poor” metal with a high density of localized electronic states at the Fermi level.     

Colossal anisotropy in diluted magnetic topological insulators

We consider dilute magnetic doping in the surface of a three dimensional topological insulator where a two dimensional Dirac electron gas resides. We find that exchange coupling between magnetic atoms and the Dirac electrons has a strong and peculiar effect on both. First, the exchange-induced single ion magnetic anisotropy is very large and favors off-plane orientation. In the case of a ferromagnetically ordered phase, we find a colossal magnetic anisotropy energy, of the order of the critical temperature. Second, a persistent electronic current circulates around the magnetic atom and, in the case of a ferromagnetic phase, around the edges of the surface.     

Boson Mott insulators at finite temperatures

We discuss the finite temperature properties of ultracold bosons in optical lattices in the presence of an additional, smoothly varying potential, as in current experiments. Three regimes emerge in the phase diagram: a low-temperature Mott regime similar to the zero-temperature quantum phase, an intermediate regime where Mott insulator features persist, but where superfluidity is absent, and a thermal regime where features of the Mott insulator state have disappeared. We obtain the thermodynamic functions of the Mott phase in the latter cases. The results are used to estimate the temperatures achieved by adiabatic loading in current experiments. We point out the crucial role of the trapping potential in determining the final temperature, and suggest a scheme for further cooling by adiabatic decompression.     

Fragile Mott insulators

We prove that there exists a class of crystalline insulators, which we call "fragile Mott insulators," which are not adiabatically connected to any sort of band insulator provided time-reversal and certain point-group symmetries are respected, but which are otherwise unspectacular in that they exhibit no topological order nor any form of fractionalized quasiparticles. Different fragile Mott insulators are characterized by different nontrivial one-dimensional representations of the crystal point group. We illustrate this new type of insulators with two examples: the d Mott insulator discovered in the checkerboard Hubbard model at half-filling and the Affleck-Kennedy-Lieb-Tasaki insulator on the square lattice.     

Pseudogap and metal-insulator transitions in doped semiconductors

The electronic spectrum of a doped semiconductor described by the Anderson-Holstein impurity model and its conductivity derived from the Kubo linear response theory are calculated. Two characteristic temperatures depending on the doping level x are found in the phase diagram, T _PG and T _λ(x). The pseudogap that opens in the single-particle spectrum at low doping levels and temperatures closes at the lower one, T _PG. The pseudogap state of an insulator is attributed to spin fluctuations in a doped compound. At the higher characteristic temperature T _λ(x),, spin fluctuations vanish and the doped compound becomes a paramagnetic poor metal. Two distinct metal-insulator crossovers between semiconductor-like and metallic temperature dependence of resistivity are found. An insulator-to-poor-metal transition occurs at T ^*(x) ≈ T _λ(x). A poor-metal-to-insulator transition at a lower temperature is attributed to the temperature dependence of density of states in the pseudogap. It is shown that both transitions are observed in La_2?x Sr_xCUO₄.     

表面改性对绝缘子真空沿面闪络特性的影响

在不同温度下对交联聚苯乙烯绝缘子进行了表面氟化处理,在脉宽0.5μs的脉冲电压下对绝缘子的真空沿面闪络性能进行测试。结果表明:在50~60℃下对交联聚苯乙烯进行表面氟化能将绝缘子沿面闪络电压提高40%~60%。通过在绝缘子表面层规律地嵌入多个薄膜导电层,制备了新型结构的高梯度绝缘子,新型高梯度绝缘子沿面闪络电压较相同材料的普通绝缘子提高40%~50%,并保持了较好的力学及加工性能。