Shot noises of spin and charge currents in a ferromagnet-quantum-dot-ferromagnet system

We have investigated the shot noises of charge and spin current by considering the spin polarized electron tunneling through a ferromagnet-quantum-dot-ferromagnet system. We have derived the spin polarized current noise matrix, from which we can derive general expressions of shot noises associated with charge and spin currents. The spin and charge currents are intimately related to the polarization angles, and they behave quite differently from each other. The shot noise of charge current is symmetric about the gate voltage whose structure is modified by the Zeeman field considerably. There exists oscillations in spin current shot noise in the absence of source-drain bias at zero temperature, and it is asymmetric in the positive and negative regimes of sourcedrain voltage. The shot noise of spin current behaves quite differently from the shot noise of charge current, since the spin current components I_x^s, I_y^s oscillate sinusoidally with the frequency ?_? in the ?th lead, while the I_z^s component of spin current is independent of time.     

Optimal control of shot noise and Fano factor by external fields

A method is devised to control the current, shot noise and Fano factor in a molecular junction using external fields. The tunneling of electrons through a molecular junction weakly coupled to two leads in the presence of a time-dependent external field is studied using a quantum master equation approach. By combining optimal control theory and assuming a predefined time-dependent current pattern, an external field can be determined which does generate a current pattern close to the requested one. With this approach the current flow pattern in time can be chosen in an almost arbitrary fashion. The same technique can be applied to control the shot noise. For minimizing the current, the corresponding shot noise decreases but does not vanish. By minimizing the shot noise, the corresponding current also approaches zero for the present model of spinless electrons. Within certain limits the proposed strategy even works well for the control of the Fano factor.     

Current shot noise characteristics in biphenyl diamine and biphenyl dithiol devices

Current shot noise characteristics, away from their average current, in biphenyl diamine and biphenyl dithiol devices are investigated. The relations among the shot noise and the applied bias, the coupling factors, as well as the alligator clips are revealed. The regular change of the shot noise in biphenyl diamine device and irregular change of the shot noise in biphenyl dithiol device are shown as the coupling strength change from full coupling to weak coupling. It is found that the shot noise suppression in biphenyl diamine device is enhanced at the higher bias. The large differences of the shot noise suppression in the biphenyl dithiol device are revealed.     

纳米尺度MOSFET过剩噪声的定性分析

最近实验表明纳米尺度MOSFET中的过剩噪声主要为散粒噪声,而此前研究认为MOSFET中不存在散粒噪声,短沟道MOSFET中的过剩噪声为热噪声. 本文基于器件电流模型分析散粒噪声取代热噪声成为过剩噪声主要成分的转变条件,根据该条件对纳米尺度MOSFET噪声特性的预测与文献报道的实验现象、模拟结果以及介观散粒噪声相关结论相符合. 关键词： 散粒噪声 过剩噪声 纳米尺度MOSFET     

Observation of nonconservation characteristics of radio frequency noise mechanism of 40-nm n-MOSFET

Bias non-conservation characteristics of radio-frequency noise mechanism of 40-nm n-MOSFET are observed by modeling and measuring its drain current noise. A compact model for the drain current noise of 40-nm MOSFET is proposed through the noise analysis. This model fully describes three kinds of main physical sources that determine the noise mechanism of 40-nm MOSFET, i.e., intrinsic drain current noise, thermal noise induced by the gate parasitic resistance, and coupling thermal noise induced by substrate parasitic effect. The accuracy of the proposed model is verified by noise measurements, and the intrinsic drain current noise is proved to be the suppressed shot noise, and with the decrease of the gate voltage, the suppressed degree gradually decreases until it vanishes. The most important findings of the bias non-conservative nature of noise mechanism of 40-nm n-MOSFET are as follows.(i) In the strong inversion region, the suppressed shot noise is weakly affected by the thermal noise of gate parasitic resistance. Therefore, one can empirically model the channel excess noise as being like the suppressed shot noise.(ii) In the middle inversion region, it is almost full of shot noise.(iii) In the weak inversion region, the thermal noise is strongly frequency-dependent, which is almost controlled by the capacitive coupling of substrate parasitic resistance. Measurement results over a wide temperature range demonstrate that the thermal noise of 40-nm n-MOSFET exists in a region from the weak to strong inversion, contrary to the predictions of suppressed shot noise model only suitable for the strong inversion and middle inversion region. These new findings of the noise mechanism of 40-nm n-MOSFET are very beneficial for its applications in ultra low-voltage and low-power RF, such as novel device electronic structure optimization, integrated circuit design and process technology evaluation.     

Current and Shot Noise in a Quantum Dot Coupled to Ferromagnetic Leads in the Kondo Regime

Using the Keldysh nonequilibrium Green function technique, we study the current and shot noise spectroscopy of an interacting quantum dot coupled to two ferromagnetic leads with different polarizations in the Kondo regime. General formulas of current and shot noise are obtained, which can be applied in both the parallel （P） and antiparallel （AP） alignment cases. For large polarization values, it is revealed that the behaviour of differential conductance and shot noise are completely different for spin up and spin down configurations in the P alignment case. However, the differential conductance and shot noise have similar properties for different spin configurations in the P alignment case with the small polarization value and in the AP alignment case with any polarization value.     

Rashba自旋轨道耦合作用下电荷流散粒噪声与自旋极化的关系研究

根据存在自旋轨道耦合时基于散射理论的电流表达式和散粒噪声表达式,并利用自旋密度矩阵推导出沿自旋量子化坐标的自旋极化率表达式.解析计算了单通道的情况,发现自旋极化率和电荷流散粒噪声无关.由于多通道解析推导的困难,使用非平衡格林函数技巧,数值计算了包含自旋轨道耦合效应的纯净二维电子气的多通道情况.分别改变偏压、自旋轨道耦合系数、导体长度,研究了这三种不同条件下的自旋极化率与电荷流散粒噪声Fano因子的相关性.两者的相关性表明,相关性定量关系的建立可能为自旋极化的全电学检测提供新思路. 关键词： 散粒噪声 自旋极化 Rashba自旋轨道耦合 散射矩阵     

Photon-assisted Shot noise of the double quantum dot interferometer in weak Kondo regime

The shot noise of a parallel double quantum dot (DQD) system under the perturbation of microwave fields is investigated in the weak Kondo regime. Peak-valley structures exhibit in the differential conductance and shot noise, and side resonant peaks emerge around the Kondo peak due to the absorption and emission of photons. The shot noise is sensitively dependent on the adjusting approach through changing the gate voltages. Large resonant Fano factor accompanying photon-induced side peaks appear by simultaneously varying the two gate voltages. The photon suppression and enhancement of shot noise have been evaluated corresponding to the coherent and incoherent current correlation. The destructive interference causes the suppression of shot noise by changing the Aharonov–Bohm phase.     

Shot noises of spin and charge currents in a ferromagnet-quantum-dot-ferromagnet system

We have investigated the shot noises of charge and spin current by considering the spin polarized electron tunneling through a ferromagnet-quantum-dot-ferromagnet system. We have derived the spin polarized current noise matrix, from which we can derive general expressions of shot noises associated with charge and spin currents. The spin and charge currents are intimately related to the polarization angles, and they behave quite differently from each other. The shot noise of charge current is symmetric about the gate voltage whose structure is modified by the Zeeman field considerably. There exists oscillations in spin current shot noise in the absence of source-drain bias at zero temperature, and it is asymmetric in the positive and negative regimes of sourcedrain voltage. The shot noise of spin current behaves quite differently from the shot noise of charge current, since the spin current components I _x ^s , I _y ^s oscillate sinusoidally with the frequency ω_γ in the γth lead, while the I _z ^s component of spin current is independent of time.      

半导体/磁性d波超导隧道结中的散粒噪声

考虑到磁性d波超导体中的能隙与磁交换能的依赖关系,通过求解Bogoliubov-de Gennes(BdG)方程,利用Blonder-Tinkham-Klapwijk理论方法研究半导体/磁性d波超导隧道结中的散粒噪声.计算结果表明:磁性d波超导结中的磁交换能h0可导致散粒噪声在零偏压处的双峰和能隙处的峰出现劈裂,劈裂的宽度为2h0;磁交换能h0同时对散粒噪声及噪声功率与平均电流的比值有抑制作用.     

Noise current spectrum in submicrometer samples

The noise current spectral density in submicrometer samples is computed using the Monte Carlo method. The normalized spectral density is found to decrease with sample length and increase with the field. The high-field noise is like shot noise and increases with current in agreement with experimental results.     

Shot noise in the current of a surface acoustic-wave-driven single-electron pump

We have measured the noise at approximately 1.6 MHz in the current produced by a single-electron pump that uses an approximately 2.7 GHz surface acoustic wave (SAW). The current can be varied by altering the voltage applied to surface gates. Over the range of gate voltage where the current is close to the quantized value corresponding to one electron being transported per cycle of the SAW, the noise in the current is dominated by shot noise, whereas away from this range the noise mostly arises from switching the charge states of electron traps in the material. By combining measurements of the shot noise and the current, we determined how the error rates--the probabilities of transporting zero or two electrons in a cycle--vary with gate voltage when the current is close to the quantized value. The results obtained suggest that these two probabilities are controlled by closely linked mechanisms.     

Dynamic spin-polarized shot noise in a quantum dot coupled to ferromagnetic terminals under the perturbation of ac fields

We have investigated the shot noise in the mesoscopic system composed of a quantum dot (QD) coupled to ferromagnetic terminals under the perturbation of ac fields. The shot noise has been derived using the nonequilibrium Green's function (NGF) technique to describe the spin polarization effect along with photon absorption and emission processes in the Coulomb blockade regime. We have examined the influence of spin polarization on the shot noise under the perturbation of ac fields in the nonadiabatic regime. The Coulomb blockade effect results in the modification of shot noise compared with the noninteracting case. The spin orientation contributes a spin valve effect for controlling electron tunnelling through this QD, and different resonant forms appear around the Coulomb blockade channel. The photon-assisted spin-splitting and spin-polarization effect contributes a photon-assisted spin valve to adjust the electron tunnelling current and shot noise. The spin-polarization effect varies the value of the Fano factor. However, it does not change the noise type from sub-Poissonian to super-Poissonian.     

Shot noise through a quantum dot in the Kondo regime

The shot noise in the current through a quantum dot is calculated as a function of voltage from the high-voltage Coulomb-blockaded regime to the low-voltage Kondo regime. Using several complementary approaches, it is shown that the zero-frequency shot noise (scaled by the voltage) exhibits a nonmonotonic dependence on voltage, with a peak around the Kondo temperature. Beyond giving a good estimate of the Kondo temperature, it is shown that the shot noise yields additional information on the effects of electronic correlations on the local density of states in the Kondo regime, unaccessible in traditional transport measurements.     

Suppression of shot noise in quantum point contacts in the "0.7 regime"

Experimental investigations of current shot noise in quantum point contacts show a reduction of the noise near the 0.7 anomaly. It is demonstrated that such a reduction naturally arises in a model proposed recently to explain the characteristics of the 0.7 anomaly in quantum point contacts in terms of a quasibound state, due to the emergence of two conducting channels. We calculate the shot noise as a function of temperature, applied voltage, and magnetic field, and demonstrate an excellent agreement with experiments. It is predicted that, with decreasing temperature, voltage, and magnetic field, the dip in the shot noise is suppressed due to the Kondo effect.     

Burst noise in non-heated thin film metal-insulator-metal cathodes

In this paper we present the results of experimental and theoretical studies of the noise characteristics of through and emission currents of thin-film metal-insulator-metal systems based on silicon oxynitride in the temperature range from 4.2 to 300 K and at frequencies at 20 Hz–100 kHz. The noise spectrum of the through current consists of burst and shot noise. In the noise spectrum of the emission current flicker noise and shot noise components predominate. The noise of the through current is not correlated with the noise of the emission current over the full range of investigated temperatures and frequencies. A proposed physical model of the origin of the burst noise in an MIM cathode is based on the assumption of the existence of two types of high conductivity channels in the dielectric: pulsating and nonpulsating. Experimental results are found to be in good agreement with the theoretical calculations.Lenin Komsomol Pedagogical Institute, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 89–94, November, 1992.     

The investigation of noise in hard radiation detectors by pulse-amplitude analysis

The potentialities of pulse-amplitude analysis for noise measurements are demonstrated with p ⁺-n silicon detectors. It is suggested to use the detector current as a parameter and vary it by illuminating the samples. The instrument was calibrated by the shot noise of the photocurrent. The criteria for shot noise are the linearity of the noise squared vs. current dependence and its slope. It is shown that conventional instrumentation for pulse-amplitude analysis provides accurate yet rapid noise investigation. For the detectors studied, flicker noise was absent even when the trapped charge in the field oxide increases by one order of magnitude.     

Shot noise suppression in avalanche photodiodes

We identify a new shot noise suppression mechanism in a thin (approximately 100 nm) heterostructure avalanche photodiode. In the low-gain regime the shot noise is suppressed due to temporal correlations within amplified current pulses. We demonstrate in a Monte Carlo simulation that the effective excess noise factors can be < 1, and reconcile the apparent conflict between theory and experiments. This shot noise suppression mechanism is independent of known mechanisms such as Coulomb interaction, or reflection at heterojunction interfaces.     

Finite-size effect in shot noise in hopping conduction

We study a current shot noise in a macroscopic insulator based on a two-dimensional electron system in GaAs in a variable range hopping (VRH) regime. At low temperature and in a sufficiently depleted sample a shot noise close to a full Poissonian value is measured. This suggests an observation of a finite-size effect in shot noise in the VRH conduction and demonstrates a possibility of accurate quasiparticle charge measurements in the insulating regime.     

Current noise through a Kondo quantum dot in a SU(N) Fermi liquid state

The current noise through a mesoscopic quantum dot is calculated and analyzed in the Fermi liquid regime of the SU(N) Kondo model. The results connect the Johnson-Nyquist noise to the shot noise for an arbitrary ratio of voltage and temperature, and show that temperature corrections are sizable in the usual experiments. For the experimentally relevant SU(4) case, quasiparticle interactions are shown to increase the shot noise.