CuO在100—160K的弹性与介电行为

用扭摆及静电音频内耗仪研究了ＣｕＯ在１００～１６０Ｋ的内耗行为，实验结果表明在该温区存在一激活能为０．２ｅＶ的弛豫峰，而ＣｕＯ的介电行为研究也表明在此范围有一弛豫峰，激活能为０．２１ｅＶ。实验还进一步说明高温超导材料在该温区的反常行为与ＣｕＯ无关。     

TS及PTS聚合过程的介电性质研究

测量了TS的介电常数与温度的关系,在160K和203K附近观察到异常;同时也跟踪测量了TS在固态聚合过程中介电常数与聚合度的关系,发现在聚合初期,介电常数先是下降,当聚合度高于30％时,介电常数迅速上升。我们认为这些变化与侧链极性基团和碳链π电子的行为有关,并对此进行了定性的讨论。 关键词：     

Eu掺杂TbMnO3多晶材料的介电性质

采用固相反应法制备了Tb_0.8Eu_0.2MnO₃多晶材料.对样品的X射线衍射（XRD）分析表明Eu³⁺固溶于TbMnO₃中.测量了样品在低温(100 K ≤T≤ 300 K)和低频下(200 Hz≤f≤100 kHz)的复介电性质.在此温度区间内发现了两个介电弛豫峰.经分析认为低温峰（T≈170 K）起源于局域载流子漂移引起的偶极子极化效应,而高温峰（T≈290 K）则是由离子电导产生的边界和界面层的电容效应引起的.电阻率的测量显示在低温下（T≈230 K）存在明显的导电机制转变.     

Eu掺杂TbMnO3多晶材料的介电性质

采用固相反应法制备了Tb_0.8Eu_0.2MnO₃多晶材料.对样品的X射线衍射（XRD）分析表明Eu³⁺固溶于TbMnO₃中.测量了样品在低温(100 K ≤T≤ 300 K)和低频下(200 Hz≤f≤100 kHz)的复介电性质.在此温度区间内发现了两个介电弛豫峰.经分析认为低温峰（T≈170 K）起源于局域载流子漂移引起的偶极子极化效应,而高温峰（T≈290 K）则是由离子电导产生的边界和界面层的电容效应引起的.电阻率的测量显示在低温下（T≈230 K）存在明显的导电机制转变. 关键词： 多铁性材料 掺杂 介电性质     

BaTiO_3/SrTiO_3(1:1)超晶格的晶格动力学、介电和压电性能的第一性原理研究

对于BaTiO3/SrTiO3(BTO/STO)沿[001]方向有序的1:1超晶格,从最高对称性的P4/mmm结构出发,用第一性原理计算了布里渊区中心声子,通过冻结不稳定声子得到P4mm和Amm2结构,进一步冻结不稳定声子得到其基态单斜Cm结构.计算了三种畸变结构的自发极化及Cm结构的电子和声子对介电和压电的贡献.分析表明:ε22和e26主要来自于频率为197,146和97 cm-1的A′′声子的贡献;ε33和e33主要来自于频率为189和139 cm-1的A′声子的贡献;ε11和e11主要来自于频率为246 cm-1的A′声子的贡献.根据离子对介电和压电张量各分量的贡献可知,Ti和O离子对介电和压电有比较大的贡献.     

PT-PEK-c电光聚合物薄膜的厚度和介电性质

研制了新的PT-PEK-c电光聚合物薄膜材料,用准波导耦合m线方法测量了PT-PEK-c电光聚合物薄膜的厚度,并测量了该聚合物薄膜在1×10²Hz到1×10⁷Hz频率范围内的室温介电常数.测量结果为:厚度d=2.328±0.315μm,在10KHz下,介电常数ε_r＝4023±0.063,介电损耗tanδ＝0.003.     

复合层状Bi7Ti4 NbO21铁电陶瓷的结构与介电和压电性能研究

制备了Bi7Ti4NbO21，Bi4Ti3O12及Nb掺杂Bi4Ti3O12(Nb-Bi4Ti3O12)层状结构铁电陶瓷材料．结合Nb-Bi4Ti3O12的介电温谱和退极化实验结果，研究了Bi7Ti4NbO21的晶体结构对其介电、压电性能的影响．高分辨透射电镜结果表明，在Bi7Ti4NbO21中，沿着c轴方向，(Bi2Ti3O10)^2-和(BiTiNbO7)^2-。两个类钙钛矿层分别与(Bi2O2)^2 层叠加堆积而成．这种晶体结构决定了Bi7Ti4NbO21的介电温谱在668℃和845℃出现介电双峰．结合极化样品的退化实验分析，说明材料在这两个温度附近发生了铁电一铁电相变、铁电一顺电相变，分别是(Bi2Ti3O10)^2-和(BiTiNbO7)^2-层状结构发生微观结构相变的结果．在退极化过程中，由于受热时钙钛矿层内空位引起的缺陷偶极子的定向排列受到破坏，引起材料部分退极化，表现为300℃热处理后Bi7Ti4NbO21的压电活性降低了10％，显示了室温下材料的压电性能来源于自发极化的固有电偶极子和缺陷偶极子的共同贡献．     

超导-高分子复合材料介电性质的研究

采用固相反应法制备高温超导材料Bi2Sr2Ca2Cu2O3(Bi-2223),以高温超导材料为基体加入聚乙丙烯橡胶(EPR)高分子绝缘材料,通过不同温度退火处理,制备一系列超导.高分子复合材料,运用X射线衍射技术(XRD)和扫描电镜(SEM)对样品进行物相分析;采用低温循环系统测量样品电阻随温度变化关系;利用HP4294A型阻抗分析仪测量样品的介电特性,并对样品的电输运性质和介电特性进行了探讨.     

Low-temperature elastic constants and piezoelectric coefficients of langasite (La3Ga5SiO14)

A complete set of elastic constants C _ij and piezoelectric coefficients e _ij of a La₃Ga₅SiO₁₄ (langasite) single crystal was determined from 5.5 to 275.5?K by resonant ultrasound spectroscopy. Unlike a conventional crystal, the elastic constants C _ij of the langasite crystal showed three types of temperature dependence: (i) monotonic elastic stiffening upon cooling (C ₄₄ and C ₁₄); (ii) monotonic elastic softening (C ₆₆); and (iii) a stiffening-to-softening transition below 150?K (C ₁₁, C ₁₂, C ₁₃ and C ₃₃). In addition, a strong correlation between C ₆₆ and the piezoelectric coefficient e ₁₁ was confirmed. Group theoretical lattice dynamics analysis revealed that the novel phenomena of elastic softening and strong correlation are explained on the basis of two types of optical mode internal displacements which have the totally symmetric A ₁ and doubly degenerated E symmetries in the point group D ₃.     

Photorefractive two-step recording in a piezoelectric La3Ga5SiO14 crystal doped with praseodymium

The first experimental verification to the authors' knowledge of efficient two-step recording in a photorefractive and piezoelectric crystal of La(3)Ga(5)SiO(14):Pr(3+) with cw laser light (I<20W/cm(2)) is reported. We found nonlinear behavior of the photorefractive sensitivity and photovoltaic current, indicating that the excitation process is connected to excitation of 4f(2) electrons of the Pr(3+) dopant through an intermediate level to the conduction band. This two-step nature of the photorefractive effect makes the crystal an exciting new candidate for applications in holographic storage.     

硅酸镓镧晶体温度、应力敏感特性及优化切向研究

从叠加偏载的运动方程出发,借助微扰理论推导了压电晶片上声表面波波速的温度、应力敏感模型,提出了应力敏感系数的概念。分析了硅酸镓镧晶体在双旋转平面内的温度和应力敏感特性,并以等高线的形式给出了理论计算结果。结合机电耦合系数及束偏向等其它特性,提出了一些具有潜在应用价值的优化切向。对欧拉角为(0,150°,22°)切向基片的温度和应力敏感特性进行了实验研究。通过对石英和硅酸镓镧两种晶体的理论计算和实验比较,验证了本文理论方法和计算结果的正确性。     

Ca3NbGa3Si2O14晶体的介电和压电特性

利用Y切和(yxl)30°切两种样品测量了Ca3NbGa3Si2O14晶体的介电、压 电和部分弹性参数.计算了(yxl)θ切型相关压电常数随切角的变化.与La3Ga5SiO14晶体相比，Ca3NbGa3Si2O14晶体具有更优良的压电性能，其压电常数 d11=7.93×10-12C/N，d14=-5.88×10-12C/N. 关键词： Ca3NbGa3Si2O14晶体 介电常数 压电常数     

La_3Ga_5SiO_(14)声光可调谐滤波器设计

分析了La3Ga5SiO14(简称LGS)既可以做成同向声光可调谐滤波器,又可以做成大孔径非同向声光可调谐滤波器。推导出超声波频率f和光波波长λo的调谐关系;计算出滤波器的光谱分辨率R和集光能力δiθ;光入射角iθ与衍射角θd、声入射角θa之间的关系。为LGS声光可调滤波器的实用化设计提供了充分可靠的理论依据。把LGS与TeO2声光可调滤波器的光谱分辨率和集光能力做了比较,认为LGS设计成同向声光可调谐滤波器既简便又实用。     

Tm3+掺杂硅酸镓镧(La3Ga5SiO14)晶体的结构与光学性能研究

利用X射线粉末衍射确定了Tm3+掺杂硅酸镓镧(La3Ga5SiO14,LGS)晶体的晶体结构;运用DICVOL91程序计算了该晶体不同部位的晶胞参数;测定了Tm:LGS晶体的室温吸收谱和470 nm光激发下的发射光谱;根据Judd-Ofelt理论拟合了Tm3+的三个晶场调节参数Ωt(t=2,4,6),分别为2.694×10-20 cm2,1.842×10-20 cm2,0.030 × 10-20 cm2;计算了各个能级跃迁的谱线强度、振子强度、吸收截面等,进而计算了3H4和3F4态的自发跃迁概率、辐射寿命、荧光分支比和积分发射截面,并对结果进行了分析.     

Ca_3NbGa_3Si_2O_(14)晶体的介电和压电特性

利用Y切和 (yxl) 30°切两种样品测量了Ca3NbGa3Si2 O1 4晶体的介电、压电和部分弹性参数 .计算了 (yxl)θ切型相关压电常数随切角的变化 .与La3Ga5SiO1 4晶体相比 ,Ca3NbGa3Si2 O1 4晶体具有更优良的压电性能 ,其压电常数d1 1=7 93× 10 - 1 2 C N ,d1 4=- 5 88× 10 - 1 2 C N .     

Crystal growth and thermal and optical properties of La3Ga5SiO14 single crystals

We have grown an almost colorless La₃Ga₅SiO₁₄ single crystal with a dimension of 26 mm using the Czochralski technique. X-ray powder diffraction of sintered material and the single crystal were performed at room temperature. The thermal expansion coefficients along Y and Z directions have been measured to be 5×10^-6 K^{- 1} and 3.8×10^-6 K^-1, respectively. The specific heat of the crystal has been measured to be 0.90 J/gK at 453.15 K. The transmittance spectra from 200 to 800 nm were measured. PACS 61.10.N; 78.70.E; 65.40.D; 65.60; 78.20.C     

Crystal growth and optical properties of Tm:La3Ga5SiO14 single crystals

High optical quality Tm:La₃Ga₅SiO₁₄ single crystals with dopant concentration of 1 at. % Tm³⁺ ions were grown by the Czochralski method. The structure was studied by the X-ray powder diffraction method. The absorption spectrum and fluorescence spectrum of Tm³⁺:La₃Ga₅SiO₁₄ crystals were measured at room temperature. PACS 42.70.-a; 42.70.Hj; 61.10.Nz; 61.66.Fn; 78.20.-e; 78.90.+t; 81.10.-h     

Piezoelectric La3Ga5.3Ta0.5Al0.2O14 crystal: growth,crystal structure perfection,piezoelectric, and acoustic properties

A five-component crystal of lanthanum–gallium silicate group La₃Ga_5.3Ta_0.5Al_0.2O₁₄ (LGTA) was grown by the Czochralski method. The LGTA crystal possesses unique thermal properties and substitution of Al for Ga in the unit cell leads to a substantial increase of electrical resistance at high temperatures. The unit cell parameters of LGTA were determined by powder diffraction. X-ray topography was used to study the crystal structure perfection: the growth banding normal to the growth axis were visualized. The independent piezoelectric constants d ₁₁ and d ₁₄ were measured by X-ray diffraction in the Bragg and Laue geometries. Excitation and propagation of surface acoustic waves were studied by the double-crystal X-ray diffraction at the BESSY II synchrotron radiation source. The analysis of the diffraction spectra of acoustically modulated crystals permitted the determination of the velocity of acoustic wave propagation and the power flow angles in different acoustic cuts of the LGTA crystal.