Mechanism and Dynamics of Fracture of the Stressed Granite Surface by a Shock Wave

The dynamics of emission of positively charged ions from the granite surfaces containing different concentrations of quartz and feldspar under the action of a shock wave is investigated with a time resolution of 2 ns. The ions are assumed to be emitted at the instants of emergence of dislocations moving in intersecting glide planes at the sample surface. Defects in the form of extended “grooves” are formed in the region of emergence of dislocations. A compressive load suppresses the defect formation.     

Dislocation nucleation and precipitation of impurity in calcium-doped NaCl-KCl crystals

In calcium-doped mixed NaCl-KCl crystals, Ca²⁺ ion sites were selectively sensed by a suitable etchant. Different impurity substructures, viz. arrays, close-networks, unevenly distributed clusters were formed by the dopant ions in the lattice. Non-uniform distributions of the impurity ions in the lattice does not nucleate dislocations. Non-structural impurities like precipitates were found to take different forms, viz. elongated rods, rectangular forms, with different orientations. Dislocations showed strong preference for the nucleation of the precipitates. The nucleation of the precipitates at sites other than those of dislocations is discussed.     

低剂量磷离子注入快速退火硅中的缺陷研究

本文对低剂量磷离子注入硅经快速热退火后的缺陷特性进行研究。600℃退火就能基本激活注入离子。800℃以下退火样品中的缺陷主要是离子注入形成的辐射损伤缺陷。800℃以上退火样品中存在位错缺陷。位错的形成与离子注入引进的损伤和淬火过程中的热应力有关。1100℃退火样品中的缺陷浓度迅速增大,热应力在硅内部产生大量的滑移位错。 关键词：     

硅中位错与蚀斑的对应关系

通过实验肯定了硅单晶的化学侵蚀定向方法,找出抛光液的最佳配比及抛光时间。确定了所选定的位错侵蚀剂的侵蚀规范;此侵蚀剂对晶面无选择性,能显示出刃型和螺型位错,以及“新”、“旧”位错。通过长时间侵蚀、逐层侵蚀、劈裂面蚀斑的对应、小角晶界上蚀斑的观察、形变硅单晶中蚀斑排列以及弯曲形变样品中蚀斑密度与曲率半径间的关系的研究等方法,证明了用此侵蚀剂所得的蚀斑确实与位错一一对应。     

Outside dislocations generated from phosphorus implanted silicon layers

The growth, movement and nature of outside dislocation, which propagate from heavily phosphorus (>10¹⁵ ions/cm²) implanted (111), (100), and (110) silicon layers into unimplanted outside regions by a compressive strain induced during 1100° C wet O₂ annealing, are investigated using transmission electron microscopy and x-ray diffraction topography. Outside dislocations are formed, mainly on (111) planes., by the glide motion of dislocation networks formed in implanted layers during early annealing. This results in dislocations extending into the unimplanted areas to different degrees, in the order of, from the largest to smallest, (111), (110), and (100) wafers. In (110) wafers, the [001] oriented dislocations in the implanted regions rise to the surface at the implant and unimplant boundary. On the other hand, the [110] dislocations penetrate into the unimplanted region. Two sets of orthogonal 〈110〉 oriented dislocations generated in (100) implanted wafers behave in the same manner as the [001] dislocations in (110) wafers. Some sources of the compressive strain related to the generation of these dislocations are discussed.     

Interactions of glide dislocations in a channel of a persistent slip band

Two unlike dislocations gliding in parallel slip planes in a channel of a persistent slip band are considered. Initially they are kept apart in straight screw positions. As the dislocations are pushed by the applied stress between two walls in the opposite directions, they bow out and attract one another forming a dipole. With the increasing stress the dislocations become more and more curved, until they separate. The walls of the channel are represented by elastic fields of rigid edge dipoles. The dislocations are modelled as planar curves approximated by moving polygons. The objective of the simulations is to determine the stress in the channel needed for the dislocations to escape one another. The stress and strain controlled regimes considered provide upper and lower estimates of the escape stress. The results are compared with the studies by Mughrabi and Pschenitzka, and Brown and the recent dislocation dynamics estimates. Problems encountered in the dislocation dynamics evaluation of the escape stress are analyzed.     

Strain and defect densities in Si/Si1-xGex heterostructures investigated by ion scattering and X-ray diffraction

MBE-grown Si/Si_1-xGe_x heterostructures on (100) Si have been characterized by Rutherford backscattering spectroscopy (RBS), ion channeling and X-ray diffraction to investigate defect densities and tetragonal lattice distortion. Critical layer thickness and relaxation of strain by formation of misfit dislocations are strongly dependent on the growth temperature. A Si_0.67Ge_0.33 layer with a thickness of 2000 Å is found to be still fully strained at a growth temperature of 450°C, whereas the same layer grown at 550°C shows considerable strain relaxation by dislocations. To obtain better depth resolution than with conventional RBS, medium energy ion scattering (MEIS) experiments have been performed on Si/Ge superlattices with layer thicknesses of 10–40 Å. A position-sensitive toroidal electrostatic analyser was employed to detect the backscattered ions simultaneously over an angular range of 30° with an energy resolution of 1 keV FWHM for 250 keV He ions, corresponding to a depth resolution of about 10 Å.     

Microhardness studies on melt-grown single-phase mixed (NaK)Cl and solution-grown two-phase NaClKCl crystals

Microhardness studies were carried out on melt-grown (NaK)Cl crystals. The quenching strains and the difference in the ionic sizes of the cations constituting the mixed system introduced large numbers of defects, viz. dislocations, grain boundaries, etc. The etching experiments and supplementary X-ray studies clearly revealed that the Na⁺ or K⁺ ions are precipitated at the dislocation sites. These phase particles strongly interact with dislocations so as to obstruct the mobility of the latter contributing to the hardening mechanism. Results are compared with solution-grown two-phase mixed NaClKCl pure NaCl and pure KCl crystals.     

Relation of F-center thermal stability to dislocation density for Nacl crystals

It is shown that the thermal stability is directly related to the dislocation density. The results are in general agreement with the ionic mechanism for color-center destruction, and dislocations may be the centers that trap the ions.We are indebted to V. I. Spikin for assistance in the experiments.     

Experimental setup for transmission channeling of MeV ions to study edge dislocations

An experimental facility was built where thin metal (Ta) crystals, with known thickness, could be studied by transmission channeling of MeV ions. The details of obtaining a faint beam (1.5–3.6 MeV) of constant flux (±1%) on the target and normalization of the spectrum of forward scattered particles have been discussed with merits and demerits of various setups used. Preliminary experimental results are reported for measuring dechanneling coefficients from edge dislocations produced by cold work, using H⁺ ions. The H⁺ stopping power for Ta in various planar channels and random direction are estimated and using those, it is shown possible to use the setup for thickness measurements of thin crystal films.     

New method for in-situ observation of moving dislocations in KCl crystal using laser-light scattering

Abstract

The dislocations moving on slip planes in a KCl single crystal under an applied load were observed successfully by a 90° angle light scattering method using a high-power Ar-ion laser (2W for a wavelength of 514 nm). The photographs of stationary dislocations were taken by an scanning type optical microscope. The image of such dislocations was very sharp and uniform compared with that of grown-in dislocations. The dynamic behavior of moving dislocations was observed by an image intensifier to intensify the scattered light from dislocations. The motion of dislocations was jerkey under a constant load in almost all cases.     

Molecular dynamic simulation of the CsCl–Al2O3 interface

The interface between solid cesium chloride and α-aluminum oxide was simulated by molecular dynamics technique. It was shown that due to a misfit between lattices of the components the interfacial contact may be presented as a small-angle boundary saturated with dislocations. Also a domain structure is formed. The dislocations and interdomain boundaries act as a source of defects and give rise to the total ionic mobility along the interface and boundaries. According to the calculation at a temperature of nearly 70% of the melting point, the diffusion coefficients of ions along misfit dislocation cores and domain walls, ∼ 10^– 6 cm²/s, are only an order of magnitude lower than the corresponding values for molten salts.     

Interaction of dislocation pile-up with a low-angle tilt boundary: a discrete dislocation dynamics study

Abstract

The pile-up of dislocations between two low-angle tilt boundaries (LATB) in an fcc crystal was simulated using three-dimensional discrete dislocation dynamics. The LATB was constructed using glissile edge dislocations stacked on each other. The dislocations in the pile-up were chosen such that their reactions with the dislocations in the LATB resulted in glissile junctions. Parallel pairs of dislocations were inserted to a maximum allowable value estimated from theoretical expressions. A resolved shear stress was applied and increased in steps so as to move the dislocations in the pile-up towards the boundaries. The shear stress required to break the lead dislocation from the wall was determined for varying spacings between the two boundaries. The shear stress and boundary spacing followed the Hall–Petch type relation. Dislocation pile-ups without a LATB were also simulated. The spacing of the dislocations in the pile-up with LATB was found to be closer (ie higher dislocation density) than that without LATB. It was shown through analytical expressions that LATB exerts an attractive force on the dislocations in the pile-up thereby creating a denser pile-up.     

Diffusion properties of plastically deformed silicon crystals

The effect of dislocations generated by electroplastic strain on the electric-field-driven transport of impurity atoms of indium in single crystals of P-silicon is investigated experimentally. It is shown that when electrodiffusion of indium and strain are induced simultaneously, the impurity ions are preferentially dragged towards the anode. Fiz. Tverd. Tela (St. Petersburg) 41, 1028–1029 (June 1999)     

Electric stimulation of magnetoplasticity and magnetic hardening in crystals

The effect of electric field E on the magnetoplastic effect (MPE) has been investigated in NaCl crystals with different impurities, which provide either the plasticization of the samples in the magnetic field (positive MPE) or their magnetic hardening (negative MPE). The mobility of individual dislocations under the joint action of the magnetic and electric fields and the mechanical load on the crystals has been studied. The sharp electric stimulation of the MPE of both signs has been revealed, i.e., an increase or a decrease in the mean free path of dislocations that is roughly proportional to exp(±E/E ₀) at E ? E ₀ ～ 1–10 kV/m. In particular, in the negative-MPE NaCl(Pb) crystals, the accompanying electric field enhances the magnetic suppression of plasticity. The results are attributed to the electrically induced transformation of the additional part of the pinning impurity ions Me⁺⁺ to the magnetically active state of Me⁺ on the dislocations. The subsequent magnetic transformation of the structure of these pinning centers should lead to a sharper variation of the dislocation pinning force (either an increase or a decrease, depending on the MPE sign).     

高剂量离子注入形成的非晶层重新结晶过程中杂质外扩散的物理模型

本文提出了一个杂质沉淀引起位错生成、位错-杂质相互作用、杂质原子沿晶粒间界快速扩散的模型,用以解释高剂量离子注入形成的非晶层在重新结晶的退火过程中杂质外扩散和缺陷运动现象。给出了在位错的合应力场的影响下杂质的扩散方程。以能量为80keV,剂量为10¹⁶cm^-2的Pb⁺注入Si(111)面为例,对扩散方程进行了数学物理处理,从而给出了根据实验测量推演表观扩散系数随时间变化及位错的合应力场对杂质的作用力的纵向分布的方法。实验测得的位错合应力场对杂质的作用系数α≈8.4×10^-28dyn·cm³,退火时间在5×10³sec至8.25×10³sec内,表观扩散系数D随时间的变化为一指数关系。 关键词：     

Geometrically necessary dislocations in FCC polycrystalline metallic materials on the mesoscale

The dislocation structure of deformed copper alloys doped with Mn and Al was determined by selected area diffraction (SAD), performed using a transmission electron microscope. The scalar dislocation density, the density of geometrically necessary dislocations, and the density of statistically stored dislocations were measured. Special attention was given to the size of grains. The effect of size on the accumulation of geometrically necessary dislocations was studied.     

利用金属有机物化学气相沉积技术生长的a面GaN表面形貌和位错的研究

采用金属有机物化学气相淀积技术在r面蓝宝石衬底上制备了a面GaN薄膜,用熔融的KOH在400 ℃对样品分别腐蚀1.0,1.5和2.0 min.用扫描电镜、原子力显微镜、X射线衍射谱和阴极射线荧光对腐蚀前后的表面形貌进行分析.研究表明,400 ℃下腐蚀1.5 min后出现了长平行四边形的条纹状,这是由于无极化的a面GaN表面极性各向异性,c向与m向上N原子悬挂键密度不同,同时稳定性不同,对OH^-离子的吸附能力不同造成的,其中沿c方向易于腐蚀.同时,a面GaN腐蚀后出现了六角突起.我们认为这与穿透位错有关,而其形貌则与GaN薄膜的位错局部极性有关. 关键词： a面GaN')" href="#">a面GaN 堆垛层错 极性     

α—SiC晶体中的位错

用腐蚀法和X射线形貌术研究了α-SiC晶体中的位错。所用的腐蚀剂为熔融氢氧化钾。证实了尖底蚀坑与位错的一一对应关系。由于[0001]方向的螺型位错的Burgers矢量比刃型位错的Burgers矢量大得多,故可从蚀坑的深浅来判别螺型位错和刃型位错。给出了蚀坑形状和多型体晶体结构的对应关系。研究了表面生长蜷线的形态与SiC晶体中的位错及位错运动的关系。X射线形貌图显示了α-SiC晶体中相当数量的位错处于基面C面上。生长位错从晶体“根部”成核并随着晶体生长前沿的向前推进而延伸,因而位错线的方向常常沿[101O]和[1120]方向。将腐蚀法和X射线形貌术结合起来才能全面显示α-SiC晶体中的位错。 关键词：     

EPR studies of changes in the charge state of Cr over a cross section of dislocation pipes in ZnS crystals

Short-term high-temperature annealing of ZnS crystals in a zinc atmosphere is shown to cause rapid Zn diffusion through dislocation pipes along growth-dislocation lines. As a result, the impurity ions of divalent chromium localized in Cottrell atmospheres outside Read cylinders become singly ionized. Plastic deformation of such ZnS crystals or the passing of an electric current through them under a voltage higher than a certain threshold value leads to a decrease in the number of univalent chromium ions. This decrease can be explained by an increase in the radius of Read cylinders as growth dislocations leave Cottrell atmospheres and by an increase in the linear density of their electric charge.