Is strong gravitational radiation predicted by TeV gravity?

In TeV-gravity models, the gravitational coupling to particles with energies ∼ m _Pl ∼ 10 TeV is not suppressed by powers of ultra-small ratio /M _Pl with M _Pl ∼ 10¹⁹ GeV. Therefore, one could imagine strong synchrotron radiation of gravitions by the accelerating particles to become the most pronounced manifestation of TeV-gravity at LHC. However, this turns out to be not true: considerable damping continues to exist, only the place of /M _Pl is taken by a power of a ratio ϑω/ , where the typical frequency ω of emitted radiation, while increased by a number of γ-factors, cannot reach /ϑ unless particles are accelerated by nearly critical fields. Moreover, for currently available magnetic fields B ∼ 10 T, multidimensionality does not enhance gravitational radiation at all even if TeV-gravity is correct. The text was submitted by the authors in English.     

Properties of phase transitions in easy-axis tetragonal antiferromagnets

Properties of phase transitions in a magnetic field H parallel to the easy axis have been investigated, and it has been shown, in particular, that the nature of the transition of the magnetic subsystem from the antiferromagnetic phase to the angular phase depends on the “sign” of the Dzyaloshinskii interaction. The conditions for orientation of the antiferromagnetism vector l in the basis plane in fields larger than the threshold field have been determined. It is shown that the transition from the angular phase to the state where the resulting magnetic moment m is parallel to the easy axis takes place in the field corresponding to a spin-flip transition. From an analysis of the configuration of the magnetic subsystem for arbitrary orientation of the external magnetic field, it follows that the values of the critical angle (ψ _cr ) for which a first-order phase transition takes place satisfy the condition in the case in which the anisotropy constant f in the basis plane is of the order of the first anisotropy constant b. Usually so that the tricritical point in the phase diagram H _y ,H _z satisfies the condition H _y ∼H _z . Fiz. Tverd. Tela (St. Petersburg) 41, 2044–2046 (November 1999)     

Magnetic breakdown and quantum magnetotransport with a constant pseudospin under tilted magnetic fields in an n -In x Ga1? x As/GaAs double quantum well

A procedure is proposed for precise scanning of the (B _⊥, B _‖) plane between the magnetic field projections that are perpendicular and parallel to (quasi-)two-dimensional layers when measuring their longitudinal and Hall magnetoresistances. Investigations of a n-In _x Ga_1−x As/GaAs double quantum well (x ≈ 0.2) performed using this procedure make it possible to reveal a number of the features of the magnetoresistance, which appear due to a complex energy spectrum of the double quantum well in a parallel field, and to separate them from the structures associated with the magnetic breakdown. The trajectories representing the features of the magnetoresistance in the (B _⊥, B _‖) plane are described by the semiclassical calculations of the quantization of the energy spectrum of the double quantum well under the action of the perpendicular field component. The structures appearing due to the magnetic breakdown are amplified with increasing the total magnetic field magnitude and, in the samples with low mobility, completely suppress the features caused by the motion of an electron with a constant pseudospin component. The peaks corresponding to the magnetic breakdown are split in a strong parallel field due to the spin splitting of the Landau levels. These splittings correspond to the effective Landé factor |g*| ≈ 3. Original Russian Text ? M.V. Yakunin, S.M. Podgornykh, V.N. Neverov, 2007, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 132, No. 1, pp. 241–249.     

A direct connection between quantum Hall plateaus and exact pair states in a 2D electron gas

It is previously found that the two-dimensional (2D) electron-pair in a homogeneous magnetic field has a set of exact solutions for a denumerably infinite set of magnetic fields. Here we demonstrate that as a function of magnetic field a band-like structure of energy associated with the exact pair states exists. A direct and simple connection between the pair states and the quantum Hall effect is revealed by the band-like structure of the hydrogen “pseudo-atom”. From such a connection one can predict the sites and widths of the integral and fractional quantum Hall plateaus for an electron gas in a GaAs-Al _x Ga_1−x As heterojunction. The results are in good agreement with the existing experimental data.     

Influence of the illumination on the subband structure and?occupation in AlxGa1?xN/GaN heterostructures

The subband structure and occupation in the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov–de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.     

Magnetoexciton absorption in coupled quantum wells

A Mott exciton in coupled quantum wells in a transverse magnetic field H is considered. An expression for the exciton spectrum in an arbitrary magnetic field for large separations D between quantum wells containing an electron (e) and a hole (h) is given. The exciton spectrum in a strong magnetic field for different Landau levels at arbitrary D has been calculated. Changes in the parameter D/l, where is the magnetic length, cause rearrangement of the magnetoexciton dispersion curves ℰ(P), where P is the conserved “magnetic” momentum, which is a function of the separation between the electron and hole in the plane of the quantum wells. Off-center (“roton”) extrema occur only for D/l,<(D/l)_cr, where (D/l)_cr is a function of the exciton quantum numbers n and m. The magnetoexciton effective mass in states with magnetic quantum number m=0 monotonically increases with H and D, while in states with m≠0 it is a nonmonotonic function of D/l. The probability of generating an exciton in coupled quantum wells increases with H. Absorption of electromagnetic radiation due to transitions between excitonic levels in coupled quantum wells is discussed. For an exciton containing a heavy hole the oscillator strengths increase with H and the oscillator strengths decrease. Zh. éksp. Teor. Fiz. 112, 1791–1808 (November 1997)     

Kinetics of indirect photoluminescence in GaAs/AlxGa1−x As double quantum wells in a random potential with a large amplitude

The kinetics of indirect photoluminescence of GaAs/Al_xGa_1−x As double quantum wells, characterized by a random potential with a large amplitude (the linewidth of the indirect photoluminescence is comparable to the binding energy of an indirect exciton) in magnetic fields B≤12 T at low temperatures T≥1.3 K is investigated. It is found that the indirect-recombination time increases with the magnetic field and decreases with increasing temperature. It is shown that the kinetics of indirect photoluminescence corresponds to single-exciton recombination in the presence of a random potential in the plane of the double quantum wells. The variation of the nonradiative recombination time is discussed in terms of the variation of the transport of indirect excitons to nonradiative recombination centers, and the variation of the radiative recombination time is discussed in terms of the variation of the population of optically active excitonic states and the localization radius of indirect excitons. The photoluminescence kinetics of indirect excitons, which is observed in the studied GaAs/Al_xGa_1−x As double quantum wells for which the random potential has a large amplitude, is qualitatively different from the photoluminescence kinetics of indirect excitons in AlAs/GaAs wells and GaAs/Al_xGa_1−x As double quantum wells with a random potential having a small amplitude. The temporal evolution of the photoluminescence spectra in the direct and indirect regimes is studied. It is shown that the evolution of the photoluminescence spectra corresponds to excitonic recombination in a random potential. Zh. éksp. Teor. Fiz. 115, 1890–1905 (May 1999)     

Fractional quantum Hall effect at a suppressed energy gap

In the fractional quantum Hall effect regime, the diagonal (ρ_xx) and Hall (ρ_xy) magnetoresistivity tensor components of the two-dimensional electron system (2DES) in gated GaAs/Al_xGa_1−x As heterojunctions are measured together with the capacitance between 2DES and the gate. The 1/3-and 2/3-fractional quantum Hall effects are observed at rather low magnetic fields where the corresponding fractional minima in the thermodynamic density of the states have already disappeared, thus, implying the suppression of the quasiparticle energy gaps. The text was submitted by the authors in English.     

A manifestation of the magnetopolaron effect in reflection and absorption of light by a three-level system in a quantum well

The absorption and reflection of light by a quantum well are investigated in the case of two closely spaced levels of electronic excitations in the well. The dependences of the dimensionless absorptance and reflectance ? on the frequency ω_l of the exciting light are calculated. The overall sequence of processes involving absorption and reemission of photons is taken into account. This is beyond the scope of the perturbation theory for the photon-electron coupling constant. It is shown that the perturbation theory is inapplicable when the reciprocal radiative lifetimes of excitations are comparable to the reciprocal nonradiative lifetimes. In this case, the nontrivial dependences and ?(ω_l) are obtained. The total reflection and the total transparency points are determined. The relationships derived are used to analyze the special case of two excitation levels that are formed in the quantum well in a strong magnetic field H normal to its plane due to the Johnson-Larsen magnetopolaron effect. The reciprocal radiative lifetimes of electron-hole pairs are calculated far from and in the vicinity of the magnetophonon resonance. It is found that these lifetimes are proportional to H in the range far from the resonance and depend strongly on the difference H-H _res in the vicinity of the resonance. The dependences of the coefficients and ? on the magnetic field H at different frequencies of the exciting light are deduced.     

Negative magnetoresistance and hall coefficient of a two-dimensional disordered system

Localization corrections to the longitudinal (δρ) and Hall (δρ_H) resistivities of a two-dimensional disordered system are calculated in all ranges of classical magnetic fields, up to the values at which the mean free path of charge carriers l is less than or of the order of the cyclotron radius R _c. It is shown that the physical reason for the departure of the l dependence of these resistivities from the logarithmic law ∝ ln(l _B /l)) (l _B is the magnetic length) at is the nonlocal process of diffusion in the Cooper channel, rather than the transition to a quasi-ballistic regime. Analytical expressions are obtained that allow one to analyze the interference effect in δρ and δρ_H in quantizing magnetic fields , including the quantum limit. Contrary to popular opinion, the localization corrections to ρ_H are shown to be nonzero. They have a sign opposite to that of the charge carriers and lead to a decrease in the magnitude of the Hall resistivity. Their field dependence has the same features and their relative magnitude is of the same order as in the case of the longitudinal resistivity. The quantum corrections to the Hall resistivity are due to the Larmor precession of the closed paths that electrons follow in the process of their multiple scattering by randomly distributed impurities.     

Electromagnetic absorption of acoustic-wave packets in metals

Damping of quasimonochromatic sound-wave packets in metals caused by the electromagnetic interaction of lattice vibrations with resonant current carriers is studied. It is assumed that the acoustic wavelength λ is much shorter than the electron mean free path length l but much longer than the characteristic damping depth σ of an electromagnetic wave in metals under anomalous-skin-effect conditions. It is also assumed that the transit time of a resonant particle through the region of field nonuniformity (∼λ) is shorter than the electronic relaxation time , where is the characteristic velocity of the resonant electrons). The distribution of the potential of the eddy electromagnetic field accompanying an acoustic radiopulse with a prescribed shape is found by solving the kinetic equation and Maxwell’s equations. The force exerted on the lattice by the resonant electrons is investigated, and the equation from the theory of elasticity that describes the evolution of a sound wave is solved. It is shown that a weak damping (of the order of the small parameter a) at the extrema of the deformation on the pulse edges as well as the appearance of high-frequency precursors near the pulse boundaries are characterisic for the evolution of a powerful transverse radiopulse. Such precursors were observed earlier by Fil’ et al., as components of a noise burst arising on the leading edge of a powerful transverse radiopulse propagating in ultrapure gallium. Fiz. Tverd. Tela (St. Petersburg) 40, 966–973 (June 1998)     

Magneto-absorption in cylindrical quantum dots

The absorption of light in an ensemble of non-interacting cylindrical quantum dots in the presence of a magnetic field is discussed using a model consisting of dots with rectangular infinitely-high potential barriers. The ensemble’s absorption coefficient is calculated — as well as the threshold frequency of absorption — as a function of the applied magnetic field and the quantum dot size. Theoretical results are compared with experimental data on magneto-luminescence in an In_0.53Ga_0.47As/InP cylindrical quantum dot system. In addition, using a perturbation theory framework, the influence of excitonic effects on the behaviour of the electron-hole energetic spectrum of said system is discussed.     

Proximity-induced superconductivity in graphene

We propose a way of making graphene superconductive by putting on it small superconductive islands which cover a tiny fraction of graphene area. We show that the critical temperature, T _c , can reach several Kelvins at the experimentally accessible range of parameters. At low temperatures, T T _c , and zero magnetic field, the density of states is characterized by a small gap E _g ≤ T _c resulting from the collective proximity effect. Transverse magnetic field H _g (T) ∝ E _g is expected to destroy the spectral gap driving graphene layer to a kind of a superconductive glass state. Melting of the glass state into a metal occurs at a higher field H _g2(T). The article is published in the original.     

Novel sets of coupling expansion parameters for low-energy pQCD

In quantum theory, physical amplitudes are usually presented in the form of a Feynman perturbation series in powers of coupling constant α. However, it is known that these amplitudes are not regular functions at α = 0. For QCD, we propose new sets of expansion parameters w _k (α _s ) that reflect singularity at α _s = 0 and should be used instead of powers α _s ^k . Their explicit form is motivated by the so-called Analytic Perturbation Theory. These parameters reveal saturation in a strong coupling case at the level α _s ^eff (α _s 1) = w ₁(α _s 1) ∼ 0.5. They can be used for the quantitative analysis of divers low-energy amplitudes. We argue that this new picture with non-power sets of perturbation expansion parameters, as well as the saturation feature, is of a rather general nature. The text was submitted by the author in English. A preliminary version with the main results was published in [1].     

On Lieb-Thirring inequalities for higher order operators with critical and subcritical powers

Let ϰ _i (H _l (V)) denote the negative eigenvalues of the operatorH _l u≔(−Δ) ^l u−V≧0,x ℝ ^d onL ₂(ℝ ^d ). We prove the two-sided estimate . We discuss bounds on the Riesz means . The first author was supported by the EPSRC grant GR/J 32084. The second author was supported byDeutsche Forschungsgemeinschaft grant We 1964-1.     

Automorphisms and symmetries of quantum logics

Given an amalgam of groups then every quantum logicQ ₀ = (L ₀,M ₀) (L ₀ is aσ-orthomodular poset,M ₀ is a full set of states on it) satisfying some reasonable conditions can be embedded in a quantum logicQ = (L, M), in which (1) all the automorphisms ofL form a group ∼-G ₁, (2) all the automorphisms ofM form a group ∼-G ₂, and (3) all the symmetries ofQ form a group ∼-G ₀. The quantum logic of all closed subspaces of a Hilbert spaceH and all its measures satisfies the conditions required fromQ ₀; hence, enlarging it, one can obtain “anything.”     

Renormalization of the contribution of the electron—electron interaction to the conductivity of two-dimensional electron systems

The contribution of the electron—electron interaction to the conductivity of the two-dimensional electron gas in an In_x Ga_1-x As single quantum well with different disorder strengths was experimentally studied. It is shown that the data are described well within the framework of the one-loop approximation of the renormalization group theory so long as the conductivity of the system remains higher than around 15e ²/μh.     

Studies on the third-harmonic generation of double-layered quantum wires in magnetic fields

The third-harmonic generations of two vertically stacked quantum wires in magnetic fields are investigated. The analytic formula for the third-harmonic generation of double-layered quantum wires is derived by means of density matrix treatment. The numerical results are presented for GaAs/Al _x Ga_1–x As double quantum wires. Finally, the calculated third-harmonic generations are plotted versus the magnetic field B, the photon energy h and the interlayer distance D.     

Materials and device properties of pseudomorphic In x Ga1−x As/Al0.3Ga0.7As/GaAs high electron mobility transistors (0<x<0.5)

Modulation doped Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures for device application have been grown using molecular beam epitaxy. Initially the critical layer thickness for InAs mole fractions up to 0.5 was investigated. For InAs mole fractions up to 0.35 good agreement with theoretical considerations was observed. For higher InAs mole fractions disagreement occurred due to a strong decrease of the critical layer thickness. The carrier concentration for Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures with a constant In _x Ga_1–x As quantum well width was investigated as a function of InAs mole fraction. If the In _x Ga_1–x As quantum well width is grown at the critical layer thickness the maximum carrier concentration is obtained for an InAs mole fraction of 0.37. A considerable higher carrier concentration in comparison to single-sided -doped structures was obtained for the structures with -doping on both sides of the In _x Ga_1–x As quantum well. Al_0.3Ga_0.7As/In _x Ga_1–x As/GaAs high electron mobility transistor structures with InAs mole fractions in the range 0–0.35 were fabricated for device application. For the presented field effect transistors best device performance was obtained for InAs mole fractions in the range 0.25–0.3. For the field effect transistors with an InAs mole fraction of 0.25 and a gate length of 0.15 m a f _T of 115 GHz was measured.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Interface <Emphasis Type="Italic">D</Emphasis><Superscript>−</Superscript> complexes in a two-dimensional electron system

The excitation spectrum of a two-dimensional electron system in high-quality AlGaAs/GaAs quantum wells has been studied by Raman scattering. New Raman lines due to the excitation of interface D ⁻ complexes in which two electrons localized in a quantum well are coupled to a charged impurity at the quantum well interface have been identified. The ground state of the interface D ⁻ complexes has been found to change in the transverse magnetic field from spin-singlet to spin-triplet, similar to a change in the ground state of the system of two electrons localized in a harmonic potential.