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利用两个大面积塑料闪烁计数器和两个液体闪烁计数器组成的望远镜系统与铅吸收体组成射程谱仪, 并用一个灵敏体积为70×50×30cm3的流光室作为剔除簇射装置, 1981年冬季, 对北京地区海平面宇宙线μ子垂直通量及其积分动量谱进行了测量. 动量测量范围为0.2 GeV/c至1.3 GeV/c μ子的垂直通量为9.2×10-3sr-1cm-2s-1. 在3.5×104张照片进行了扫描判别, 可得簇射比例约占30%. 文中并对若干修正进行了讨论. 相似文献
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到目前为止, 利用e+e-→τ+τ-反应测量τ粒子寿命的最精确测定值是MARKⅡ实验组报道的(3.20±0.41±0.35)×10-13秒, 其中第二、三两项分别为统计误差和系统误差. 我们的计算表明, 在与上述实验相同的束流管道壁厚、束流空间分散和积分亮度(40pb-1)条件下, 利用r-φ平面上位置分辨40μ的时间扩展室作为顶点探测器, 当质心系能量为√s=40GeV时, τ寿命的统计误差可降低到0.13×10-13秒, 估计系统误差的大小与统计误差相近. 相似文献
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1982年, 作者在悉尼大学对能量为6×1014~5×1016eV的高能宇宙线的能谱进行了实验研究. 实验采用了快速、高效率的电子仪器, 并用电子计算机进行控制, 实现了高度自动化. 研究结果表明, 初级宇宙线的积分能谱可表示为I=K.(E/E0)-γ, 式中γ的数值在能量E为3×1015eV附近由1.15±0.04改变为1.19±0.08. 相似文献
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用ΔE-E望远镜技术和飞行时间技术对61.8MeV的12C离子轰击27Al靶的反应测量了从6Li到16O的诸同位素能谱. 得到了质心系微分截面等高图及出射碎片角分布. 从而得到轻系统深部非弹性碰撞过程的能量全弛豫值, 并在耗散模型框架中, 通过实验的能量全弛豫值与理论值的比较, 得到了出射道的库仑能、核势能与转动能各自的贡献. 通过理论拟合角分布, 得出双核系统平均相互作用时间在1×10-21—1.4×10-22秒之间, 得到了出射碎片分离时的最接近距离的参数值. 通过势能面的计算, 说明了出射产物产额的变化趋势. 并从总产物角分布分解出准弹性截面及深部非弹性截面数值. 相似文献
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The 9 and 12MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×109 to 4×10×10cm-2 and 1×109 to 2×1012cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 12~MeV protons are about 4×1010 and 2×1012 cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program. 相似文献
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超高速摄影用高强度铝合金转镜动态特性的研究 总被引:12,自引:4,他引:8
转镜型超高速摄影机的信息容量取决于转镜的材料和横截面形状.本文首次对超高速摄影用高强度铝合金转镜从理论和实验两个方面进行了系统研究.研究表明:高强度铝合金是超高速分幅摄影机转镜的理想材料;当铝转镜截面形状为正三角形、镜面尺寸为(17×32.5)mm2时,转速已达(50×104)rpm,镜面尺寸为(33×24)mm2时,转速已达(40×104)rpm. 相似文献
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超小型光-X射线微微秒变象管扫描相机,采用了近聚焦微通道板增强的变象管和电子学上达不到的有微微秒上升和下降时间的光电开关。相机有~2微微秒的时间分辨率,扫描速度近3×1010厘米/秒,能对可见光及激光引发核聚变产生的X射线进行条纹照相,可测量超短激光脉冲,进行微微秒定时,检验微微秒变象管特性。整机微微秒光电脉冲通道全用匹配连接,具有性能好,结构紧凑,元件少,体积小,重量轻的特点。 相似文献
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Thermally grown amorphous SiO2 films were implanted at room temperature with 100 keV C-ions to 5.0×1017 or 1.2×1018 ions/cm2. These samples were irradiated at room temperature with 853 MeV Pb-ions to 5.0×1011, 1.0×1012, 5.0×1012 ions/cm2, or with 308 MeV Xe-ions to 1.0×1012, 1.0×1013, 1.0×1014 ions/cm2, respectively. Then the samples were investigated using micro-Raman spectroscopy. From the obtained Raman spectra, we deduced that Si--C bonds and sp2 carbon sites were created and nano-inclusions may also be produced in the heavy ion irradiated C-doped SiO2. Furthermore, some results show that Pb ion irradiations could produce larger size inclusions than Xe ions and the inclusion size decreased with increasing the irradiation fluence. The possible modification process of C-doped a-SiO2 under swift heavy ion irradiations was briefly discussed. 相似文献
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Amorphous SiO2 thin films with about 400—500 nm in thickness were thermally grown on single crystalline silicon. These SiO2/Si samples were firstly implanted at room temperature (RT) with 100 keV carbon ions to 2.0×1017, 5.0×1017 or 1.2×1018 ions/cm2, then irradiated at RT by 853 MeV Pb ions to 5.0×1011, 1.0×1012, 2.0×1012 or 5.0×1012 ions/cm2, respectively. The variation of photoluminescence (PL) properties of these samples was analyzed at RT using a fluorescent spectroscopy. The obtained results showed that Pb-ion irradiations led to significant changes of the PL properties of the carbon ion implanted SiO2 films. For examples, 5.0×1012 Pb-ions/cm2 irradiation produced huge blue and green light-emitters in 2.0×1017 C-ions/cm2 implanted samples, which resulted in the appearance of two intense PL peaks at about 2.64 and 2.19 eV. For 5.0×1017 carbon-ions/cm2 implanted samples, 2.0×1012 Pb-ions/cm2 irradiation could induce the formation of a strong and wide violet band at about 2.90 eV, whereas 5.0×1012 Pb-ions/cm2 irradiation could create double peaks of light emissions at about 2.23 and 2.83 eV. There is no observable PL peak in the 1.2×1018 carbon-ions/cm2 implanted samples whether it was irradiated with Pb ions or not. All these results implied that special light emitters could be achieved by using proper ion implantation and irradiation conditions, and it will be very useful for the synthesis of new type of SiO2-based light-emission materials. 相似文献
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在En=4.5—18.3 MeV 能区,用活化法测量了27Al(n,α)24Na,46Ti(n,p)46Sc1),48Ti(n,p)48Sc1),51V(n,α)48Sc 和127I(n,2n)126I 的激发曲线.在 En=14.61±0.20 MeV 处,以伴随粒子法作中子通量测量,得到了27Al(n,α)24Na 反应截面.其他反应以此截面为标准进行绝对测量.产物核放射性用经标定过效率的 NaI(Tl)闪烁谱仪测量.结果分别为117.5±3.0 mb,291.4±14.0 mb,63.7±3.2 mb,16.8±0.9 mb 和1656±68mb.最后对测量结果进行了简单的比较. 相似文献
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Influence of thermal and resonance neutron on fast neutron flux measurement by 239Pu fission chamber
The 239Pu fission chambers are widely used to measure fission spectrum neutron flux due to a flat response to fast neutrons. However, in the meantime the resonance and thermal neutrons can cause a significant influence on the measurement if they are moderated, which could be eliminated by using 10B and Cd covers. At a column enriched uranium fast neutron critical assembly, the fission reaction rates of 239Pu are measured as 1.791× 10-16, 2.350×10-16 and 1.385× 10-15 per second for 15 mm thick 10B cover, 0.5 mm thick Cd cover, and no cover respectively, while the fission reaction rate of 239Pu is rapidly increased to 2.569× 10-14 for a 20 mm thick polythene covering fission chamber. The average 239Pu fission cross-section of thermal and resonance neutrons is calculated to be 500 b and 24.95 b with the assumption of 1/v and 1/E spectra respectively, then thermal, resonance and fast neutron flux are achieved to be 2.30× 106, 2.24× 106 and 1.04× 108 cm-2·-1. 相似文献
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提出了一种亚层子模型. 层子和轻子是由rishon T和V组成的. T和V是SUH(3)×SUC(3)×SUG(2)×U(1)群的多重态. 由这些多重态可以自然地得到三代层子和轻子. 在此模型中质子衰变为μ-e+e+或e-μ+μ+. 相似文献
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Single-crystalline Si (100) samples were implanted with 30 keV He2+ ions to doses ranging from 2.0×1016 to 2.0×1017ions /cm2 and subsequently thermally annealed at 800℃ for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0×1016 ions /cm2 implanted sample surface; spherical-shaped blisters with an average height around 10.0nm were found on the 5.0×1016 ions /cm2 implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0×1017 ions /cm2. Exfoliations occurred on the sample surface to a dose of 2.0×1017 ions /cm2. Mechanisms underlying the surface change were discussed. 相似文献
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用符合计数器望远镜测量电离损失的方法,在海平面宇宙线中寻找相对论性的小电荷粒子。实验中用厚碘化钠(铊)计数器测量粒子的很小电离损失,来确定粒子电荷。用反符合环形计数器排除侧面进入的粒子本底,实验测量了电荷范围从1/12到1/4电子电荷的小电荷区域。测量的初步结果给出:海平面宇宙线中的(非大气簇射中心区的)小电荷粒子通量的上限,在电荷0.08到0.19电子电荷范围内及0.19到0.25电子电荷范围内,分别小于4×10-5粒子/平方厘米·秒·立体孤度及2×10-5粒子/平方厘来·秒·立体弧度(置信水平90%)。 相似文献