Low field DC investigation of hot carrier trapping in silicon dioxide films

The experimental method used in this work is based upon the idea of nonavalanche injection of carriers heated by direct electric field. The structure consisted of an n-channel MOS transistor and two p-n junctions. The process of charge injection in this structure was investigated by studying the dependence of gate current on heating voltage. The trapping properties of the SiO₂ film were studied by monitoring the charging of the film during injection of electrons. The capture cross-sections, the trap centre concentrations and the dependence of the capture cross section on the electric field for fields between 1 MV/cm and 2.5 MV/cm were determined.     

Silicon nanoparticle charge trapping memory cell

A charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al₂O₃ which acts as the gate, blocking and tunneling oxide. Spin coating technique is used to deposit Si NPs across the sample between Al₂O₃ steps. The Si nanoparticle memory exhibits a threshold voltage (V_t) shift of 2.9 V at a negative programming voltage of –10 V indicating that holes are emitted from channel to charge trapping layer. The negligible measured V_t shift without the nanoparticles and the good re‐ tention of charges (>10 years) with Si NPs confirm that the Si NPs act as deep energy states within the bandgap of the Al₂O₃ layer. In order to determine the mechanism for hole emission, we study the effect of the electric field across the tunnel oxide on the magnitude and trend of the V_t shift. The V_t shift is only achieved at electric fields above 1 MV/cm. This high field indicates that tunneling is the main mechanism. More specifically, phonon‐assisted tunneling (PAT) dominates at electric fields between 1.2 MV/cm < E < 2.1 MV/cm, while Fowler–Nordheim tunneling leads at higher fields (E > 2.1 MV/cm). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters

In this paper we report on recent results on charge trapping and electroluminescence (EL) from Ge rich SiO₂ layers. Thermally grown 80 nm thick SiO₂ layers were implanted with Ge ions at energies of 30–50 keV to peak concentrations of 1–6 at%. Subsequently rapid thermal annealing was performed at 1000°C for 6, 30 and 150 s under a nitrogen atmosphere in order to form luminescence centers. A combination of capacitance–voltage (CV) and current–voltage (IV) methods was used for the investigation of the trapping properties. It was found that at electric fields <8 MV/cm electron trapping dominates while at higher electric fields which are typically required for the EL operation of the devices positive charge trapping occurs. It is assumed, that the trapping sites which are responsible for the trapping of the positive charge are in strong relation to the defects causing the luminescence.     

Radiation resistance of wide-gap materials as exemplified by SiC nuclear radiation detectors

In wide-gap materials used in nuclear detectors, the polarization effect is typically observed when the concentration of radiation-induced defects is high. An emf arising in the detector is associated with long-term trapping of charge carries by deep radiation-induced levels (centers). The polarization kinetics and the polarization field strength are determined experimentally. The trapping efficiency can be controlled by varying the temperature, and a tradeoff can be reached at an “optimal” temperature between the generation current and the position of the deepest level, which has a negligible effect on charge losses via trapping. It is found that the ratio between the depth of this level and the bandgap is about 1/3 irrespective of the material but the optimal temperature is material-specific.     

Effect of surface traps on relaxation of injected charge in dielectric films

The problem of relaxation of the charge injected into a dielectric film has been analytically solved taking into account its conductivity and carrier trapping by both bulk and surface deep traps with fast (almost instantaneous) charging and finite discharge rates. The charge behavior in one-zone and two-zone relaxation modes has been analyzed. In particular cases, general analytical expressions give previously published results. Numerical calculations and an analysis of experimental data for titanium dioxide films deposited on metal substrates confirm the applicability of the developed model.     

Thermally stimulated current in polypropylene films charged in strong electric fields

We have observed a unique feature of the thermally stimulated depolarization (TSD) current in polypropylene (PP) films polarized in strong electric fields (up to 1–2 MV/cm). The direction of the TSD current is the same as the direction of the charging (polarizing) current, and the shape of the TSD current curve is much different from the standard curve. We show by computer model that these features can be explained by charge carrier injection in the film by charging from both electrodes. Both the charging curve shape and TSD current direction are explained by a model in which injected carriers form charged regions inside the film at a distance from the electrodes of one-fourth the thickness of the dielectric. Saint Petersburg State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 12–20, April, 1997.     

Transient currents in discharge mode in cellulose acetate: polyvinyl acetate blend films

The transient currents measured in discharge mode with cellulose acetate (CA): polyvinyl acetate (PVAc) blend films (≈ 20μm thick) as a function of charging field [(1.5–4.5)×10⁴ V/cm], temperatures (323–373 K) and polymer weight ratio (90:10 and 75:25) have been found to follow Curie-von Schweidler law, characterized with two slopes in short and long time regions. Isochronals characteristics (i.e. current/temperature plots at constant times) constructed from these data seemed to reveal a broad peak observed at 363 K. Values of activation energy increase with PAVc content and also with time of observation. Space charge due to trapping of injected charge carriers in energetically distributed traps and induced dipoles created because of the piling up of charge carriers at the phase boundary of heterogeneous structure of blend are considered to account for the observed currents.     

Transient and thermally stimulated depolarization currents in pure and iodine doped polyvinyl formal (PVF) films

Transient currents, measured with pure and iodine doped polyvinyl formal (PVF) films as a function of poling field (15–100 kV/cm) and temperature (30–95°C), have been found to follow Curie-von Schweidler law characterized with two slopes in short and long time regions. The isochronals (i.e. current/temperature plots at constant times) have been found to give rise to a peak located at 75°C. The order of current has been found to increase with increase in poling field, temperature and iodine mixing. The comparative studies of the isochronals with the thermally stimulated discharge current (TSDC) indicated the strong resemblance between the two studies. It is suggested that both the dipolar orientation due to molecular mechanism of motions with the side chains and space charge due to trapping of injected charge carriers in energetically distributed traps may be responsible for the observed currents. The dependence of current and activation energy on iodine mixing is explained on the basis of a charge transfer type of interaction.     

Field electron emission from an aluminum oxide covered tungsten {112} plane at temperatures up to 1700°K

Field electron emission from an aluminum oxide mono-layer, face specifically adsorbed on a tungsten {112} plane, was measured between 1670°K and room temperature and at local field strength ranging from 17 MV/cm to 35 MV/cm. In a Fowler-Nordheim plot straight lines were obtained up to about 820°K. The work function at 650°K was determined to be 3.2 eV. The experimental values were compared with those determined by Christov's unified theory of field and thermionic emission. Deviations are attributed to the change in the shape of the potential barrier, which is caused by the aluminum oxide adsorption.     

Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked dielectric

Atomic layer deposited(ALD) Al2O3 /dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8°off-axis 4H-SiC(0001) epitaxial wafers are investigated in this paper.The metal-insulation-semiconductor(MIS) capacitors,respectively with different gate dielectric stacks(Al2O3/SiO2,Al2O3,and SiO2) are fabricated and compared with each other.The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field(≥12 MV/cm) comparable to SiO2,and a relatively low gate leakage current of1×10-7A/cm2 at an electric field of4 MV/cm comparable to Al2O3.The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage,indicating a less effective charge and slow-trap density near the interface.     

Magnetic excitations in charge ordered a' - {N_a}{V_2}{O_5}

An investigation of the spin excitation spectrum of charge ordered (CO) NaV₂O₅ is presented. We discuss several different exchange models which may be relevant for this compound, namely in-line and zig-zag chain models with weak as well as strong inter-chain coupling and also a ladder model and a CO/MV (mixed valent) model. We put special emphasis on the importance of large additional exchange across the diagonals of V-ladders and the presence of exchange anisotropies on the excitation spectrum. It is shown that the observed splitting of transverse dispersion branches may both be interpreted as anisotropy effect as well as acoustic-optic mode splitting in the weakly coupled chain models. In addition we calculate the field dependence of excitation modes in these models. Furthermore we show that for strong inter-chain coupling, as suggested by recent LDA + U results, an additional high energy optical excitation appears and the spin gap is determined by anisotropies. The most promising CO/MV model predicts a spin wave dispersion perpendicular to the chains which agrees very well with recent results obtained by inelastic neutron scattering. Received 30 April 1999 and Received in final form 5 October 1999     

恒流应力下E2PROM隧道氧化层的退化特性研究

在电容测量的基础上研究了薄隧道氧化层在恒定Fowler-Nordheim(F-N)隧穿电流下的退化情况. 这种退化是恒流应力和时间的函数，对恒流应力大小的依赖性更加强烈，隧道氧化层在F-N电流下的退化是注入电荷密度(Q_inj)的函数. 在较低Q_inj下氧化层中发生正电荷俘获，在较高Q_inj下发生负电荷俘获，导致栅压变化的反复. 关键词： 2PROM')" href="#">E²PROM 隧道氧化层 退化 恒流应力     

High density Al2O3/TaN-based metal--insulator-- metal capacitors in application to radio frequency integrated circuits

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance （VCCs） of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance.     

Electrophotographic multi-layer plates based on vacuum-evaporated cadmium sulphide and polyethylene

A new possibility for using vacuum-evaporated CdS thin films in combination with a suitable organic polymer (e.g., polyethylene) in electrophotography is described. The advantages of a multi-layer type sample are discussed in terms of deep bulk trapping of the photogenerated free carriers, injected in the polymer. A formula is derived, which links the initial rate of surface potential decay with the trapping range in unit field ₀. Using it and the data for the initial rates of surface potential decay of two samples (a double-layer and a multi-layer one), the trapping range for the vacuum-evaporated polyethylene films is determined.     

光折变晶体钛酸钡锶电荷传输参数的测量

报道用两波耦合技术测量光折变晶体钛酸钡锶(Ba_(1-x)Sr_xTiO-3,BST)的电荷传输参数φμτ在激光波长λ=515nm和光功率密度I—1W/cm~2下测得光折变响应时间为0.5sec.考虑到BST晶体吸收系数的光强相关性,修改了光栅形成率的函数变量,得到BST晶体的暗电导σ_a和电荷传输参数φμτ的拟合值分别为1.0×10~(-11)(Ωcm)~(-1)和2.8×10~(-10)cm~2/V.     

CdZnTe平面探测器对低能X/γ射线的光谱响应

基于3片不同条件下生长的CdZnTe晶片制备出平面电极(Planar)探测器CZT1、CZT2及CZT3.分析室温下3个探测器在不同场强作用下对低能X/γ射线的光谱响应,并结合相应晶体材料的载流子迁移特性和掺杂剂的浓度以及存在状态,归纳影响探测器分辨率的原因.掺杂In浓度高的探测器CZT1,由于材料中存在的深能级缺陷Cd2+i,作为电子的俘获中心,影响了载流子的收集效率,进而降低了探测器的能量分辨率;掺杂In浓度低的探测器CZT2对不同能量X/γ射线均具有较好的能量分辨率;而Al掺杂探测器CZT3,由于Al间隙原子Ali的存在作为电子的散射中心,最终影响了收集效率及能量分辨率.     

High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack

Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) memories with novel p-SnO/n-SnO₂ heterojunction charge trapping stacks (CTSs) are investigated comparatively under a maximum fabrication temperature of 280 ℃. Compared to a single p-SnO or n-SnO₂ charge trapping layer (CTL), the heterojunction CTSs can achieve electrically programmable and erasable characteristics as well as good data retention. Of the two CTSs, the tunneling layer/p-SnO/n-SnO₂/blocking layer architecture demonstrates much higher program efficiency, more robust data retention, and comparably superior erase characteristics. The resulting memory window is as large as 6.66 V after programming at 13 V/1 ms and erasing at -8 V/1 ms, and the ten-year memory window is extrapolated to be 4.41 V. This is attributed to shallow traps in p-SnO and deep traps in n-SnO₂, and the formation of a built-in electric field in the heterojunction.     

溶胶凝胶法制备以HfO2为绝缘层和ZITO为有源层的高迁移率薄膜晶体管

采用溶胶凝胶法制备了h-k氧化铪HfO₂薄膜, 经500℃退火后, 获得了高透过率、表面光滑、低漏电流和相对高介电常数的HfO₂薄膜. 并采用氧化铪作为绝缘层和锌铟锡氧化物作为有源层成功地制备了底栅顶接触结构薄膜晶体管器件. 获得的薄膜晶体管器件的饱和迁移率大于100 cm²·V^-1·s^-1, 阈值电压为-0.5 V, 开关比为5×10⁶, 亚阈值摆幅为105 mV/decade. 表明采用溶胶凝胶制备的薄膜晶体管具备高的迁移率, 其迁移率接近低温多晶硅薄膜晶体管的迁移率.     

掺杂含量对环氧纳米复合电介质陷阱与空间电荷的影响

环氧纳米复合电介质具有抑制空间电荷积聚、高电阻率、高击穿强度等优异性能,对直流电力设备的发展具有重要的作用.但纳米粒子含量对纳米复合电介质陷阱、电导率和空间电荷的影响机理尚不清楚.本文在纳米复合电介质交互区结构模型的基础上提出了计算交互区浅陷阱和深陷阱密度的方法,得到了浅陷阱和深陷阱密度随纳米粒子含量的变化关系.随着纳米粒子含量的增加,浅陷阱密度逐渐增大,深陷阱先增加然后由于交互区重叠的影响而逐渐减少.研究了纳米粒子含量对浅陷阱控制载流子迁移率的影响,发现随着纳米粒子的增多,浅陷阱大幅增多,浅陷阱之间的平均间距迅速减小,导致载流子更容易在浅陷阱间跳跃迁移,浅陷阱控制载流子迁移率增大.建立了纳米复合电介质的电荷输运模型,采用电荷输运模型计算研究了环氧/二氧化钛纳米复合电介质的空间电荷分布、电场分布和电导率特性.发现在纳米粒子添加量较小时,交互区的深陷阱对电导的影响起主导作用;纳米粒子添加量进一步增加,浅陷阱对电导的影响将起到主要作用.     

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal–oxide–semiconductor(MOS) capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250℃ in NO ambient for above 1 h due to the increasing interface shallow and fast states.These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the(1120) and(1100) faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the(0001) face under the same NO annealing condition. In addition, it is found that Fowler–Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device.However, Poole–Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO_2/Si C interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO_2/Si C interfaces.