Constant schubweg for hole transport in corona charged fluorethylenepropylene

Thin (25 m) foils of Teflon^® FEP are charged positively in a constant-current corona triode with currents between 1–6×10^–9 A to a voltage of 3 kV. Experimental results give the voltage as a function of time during charging and during the discharge which occurs after the corona current has been turned off. Results can be interpreted in terms of a theory which introduces shallow surface and deep bulk traps and assumes that the field-induced carrier drift is characterized by a constant schubweg.     

Low field DC investigation of hot carrier trapping in silicon dioxide films

The experimental method used in this work is based upon the idea of nonavalanche injection of carriers heated by direct electric field. The structure consisted of an n-channel MOS transistor and two p-n junctions. The process of charge injection in this structure was investigated by studying the dependence of gate current on heating voltage. The trapping properties of the SiO₂ film were studied by monitoring the charging of the film during injection of electrons. The capture cross-sections, the trap centre concentrations and the dependence of the capture cross section on the electric field for fields between 1 MV/cm and 2.5 MV/cm were determined.     

Electron transport in corona charged 12 μm teflon FEP with saturable deep traps

Surface-potential measurements carried out in negatively corona charged 12 m samples of fluorethylenepropylene (Teflon FEP) showed the following characteristics: 1) with a constant charging current, the potential initially rises linearly, and then sublinearly; 2) the potential saturates irrespectively of the charging process and 3) practically no potential decay is observed after switching off the corona. These results have been interpreted in terms of an usual model (field-independent trapping time) for charge transport in insulators, with saturable deep traps in both surface and bulk of the sample and a relatively high electron mobility in order to prevent free-space charge accumulation. The partial differential equations derived from the model are numerically solved and it was found that only the product of the mobility with the trapping time is relevant to the fitting of experimental results, provided that >10^–8 cm²/Vs. A field-dependent trapping time model leads to poorer fittings.     

Mechanism of conductivity in metal-polymer-metal structures

Received: 25 September 1998 / Accepted: 25 November 1998 / Published online: 24 February 1999     

Photocatalytic Properties of TiO2/Si-NPA Nano Composite Systems

A new composite system is fabricated by depositing the TiO2 film on a silicon nanoporous pillar array （Si-NPA） and annealing at 500℃ using the spin coating method. Such a composite system exhibits a uniform morphology with the micron-dimension pillar array. Photocatalytic properties are investigated based on the degradation of methyl orange dye solution, and the results show that the photocatalytic efficiency of such a nano-composite system is 1.7 times that of the TiO2/glass system. The enhancement of photocatalytic efficiency is attributed to the large surface area of the TiO2/Si-NPA system.     

The vibrational modes around the soliton lattice with next neighbor hopping interactions in highly doped trans-(CH) x

Starting from the extended SSH model that includes an external Coulomb potential arising from interchain charged solitons and counterions, the intrachain e-e interaction and the next neighbor hopping interactions, eight localized vibrational modes around the soliton lattice have been found for the doping levels from 3.33 at.% to 13.33 at.%. Among them three are infrared active and they can be used to interpret the three observed infrared absorption lines at 487, 1284 and 1362 cm^–1. Furthermore, the frequencies of localized modes are decreased and their localizations are weakened when the dopant concentrations increase.     

The electrical properties of doped silicon,grown by Molecular-Beam-Epitaxy (MBE)

Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 10¹⁴ to 10²⁰ cm^–3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.     

Three-layer piezoelectrets from fluorinated ethylene-propylene (FEP) copolymer films

A process for preparing three-layer piezoelectrets from fluorinated ethylene-propylene (FEP) copolymer films is introduced. Samples are made from commercial FEP films by means of laser cutting, laser bonding, electrode evaporation, and high-field poling. The observed dielectric-resonance spectra demonstrate the piezoelectricity of the FEP sandwiches. Piezoelectric d ₃₃ coefficients up to a few hundred pC/N are achieved. Charging at elevated temperatures can increase the thermal stability of the piezoelectrets. Isothermal experiments for approximately 15 min demonstrate that samples charged at 140°C keep their piezoelectric activity up to at least 120°C and retain 70% of their initial d ₃₃ even at 130°C. Acoustical measurements show a relatively flat frequency response in the range between 300 Hz and 20 kHz.     

Photoinjection studies of ion-implantation-induced electron traps in MOS structures

Trapping centers related to P⁺ and B⁺ ions implanted in the SiO₂ layer as well as traps introduced into SiO₂ during boron implantation through the oxide into the silicon substrate have been investigated. The internal photoemission method has been used to estimate their capture cross section and total densityN _t .     

Core-electron binding energies in atoms and monolayers adsorbed on metallic substrates

A Born-Haber cycle analysis of photoemission from atoms and monolayers adsorbed on metallic surfaces elucidates the effects of the substrate on the initial and final state contributions to measured core-electron binding energies. For rare gases both a dependence on the work function of the substrate and on the final state screening energy are identified. Depending on the relative magnitudes of the work function of the substrate and the ionization potential of the core-ionized atom, the screening charge may reside either in the substrate or on the adsorbate atom itself. Within the monolayer range, the coverage-dependence of the core-electron binding energy is shown to be largely a final-state effect. The Born-Haber cycle relating the Auger decay energy of an adsorbed core-ionized atom to that of a similar free atom is also presented. These formulations are tested using data for Xe adsorbed on Pd and Cs.     

Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

We have used deep level transient spectroscopy (DLTS), and Laplace-DLTS to investigate the defects created in antimony doped germanium (Ge) by sputtering with 3 keV Ar ions. Hole traps at E_V+0.09 eV and E_V+0.31 eV and an electron trap at E_C−0.38 eV (E-center) were observed soon after the sputtering process. Room temperature annealing of the irradiated samples over a period of a month revealed a hole trap at E_V+0.26 eV. Above room temperature annealing studies revealed new hole traps at E_V+0.27 eV, E_V+0.30 eV and E_V+0.40 eV.     

Photocurrents in p-n Si diodes under high intensity (pulsed-laser) illumination: Quantum yields and kinetic evaluation

The photoelectric response of p-n Si photodiodes under pulsed laser illumination (half width 10 ns) at 532 nm was studied as a function of dose which was varied over 6 orders of magnitude. The photocurrent transients are dominated by a plateau-like feature due to the build up of space charge at the intensities used. Increasing bias voltage increases the height of the plateau and decreases its length. In the low-dose range the length of the transient increases linearly with dose and the collected charge (integrated current) reaches a constant value. At high doses (above 10^–5 J/pulse · cm² or 2.7×10¹³ quanta/pulse · cm²) considerable charge loss (decrease in quantum yields) is accompanied by a less than proportional increase of the transient lifetime. From model calculations the dose and voltage dependence of the quantum yield of charge collection is shown to be the result of competition between current flow and first and higher order recombination. The model calculations are consistent with experimental results. Rate constants have been obtained by fitting.     

Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si（001） Studied by Conductive Atomic Force Microscopy

Electrical properties of individual self-assembled GeSi quantum dots grown on Si substrates are investigated by using conductive atomic force microscopy at room temperature. By controlling the bias voltage sweep in a certain fast sweep rate range, a novel current peak is observed in the current-voltage characteristics of the quantum dots. The current peaks are detectable only during the backward voltage sweep immediately after a forward sweep. The current peak position and intensity are found to depend strongly on the voltage sweep conditions. This kind of current-voltage characteristic under fast sweep is very different from the ordinary steady state current behaviour of quantum dots measured previously. trapping in the potential well formed bottom Si substrate. The origin of this phenomenon by the quantum dot sandwiched can be attributed to the transient hole between the native oxide layer and the     

Determination of carrier density dependent lifetime and quantum efficiency in semiconductors with a photoluminescence method (application to InGaAsP/InP heterostructures)

The light beam of a laser is focussed near the surface of a semiconductor sample. Thereby the excitation rate can be controlled precisely assuming a Gaussian intensity distribution of the beam. Measuring the recombination light intensity yields the quantum efficiency of the sample. By sinusoidal modulation of the excitation light and measurement of the resulting phase shift of the recombination light, the carrier density dependent lifetime is obtained. By evaluation of measured internal quantum efficiency and phase shift, Auger and radiative recombination coefficients are determined. The analysis takes into account the carrier density dependence of the radiative coefficient and shows that for most experimental conditions carrier diffusion can be neglected. In this case the analysis can be performed without numerical integration. Application of the method to quaternary InGaAsP material yielded values for Auger coefficient and radiative coefficients in accordance with published results.     

Effect of RE as a co-dopant in long-lasting phosphorescence CdSiO3:Mn (RE=Y, La, Gd, Lu)

Effect of RE³⁺ as a co-dopant in long-lasting phosphorescence CdSiO₃:Mn²⁺ (RE=Y, La, Gd, Lu) has been investigated. A longer orange emitting phosphorescence phenomenon was observed in the co-doped CdSiO₃:Mn²⁺,RE³⁺ phosphors after exciting with ultraviolet (UV) light. The luminescence properties, including photoluminescence (PL) spectra and thermoluminescence (TL) spectra, as well as the afterglow decay curves, were studied. The results revealed that one of the origins of the improvement is due to nonequivalent substitution to produce more e-traps, and energy transfer from Gd³⁺ to Mn²⁺ to boost the performance of CdSiO₃:Mn²⁺,Gd³⁺. Role of RE³⁺ co-doped into CdSiO₃:Mn²⁺ matrix and the possible long-lasting phosphorescence process are discussed in this paper.     

Enhancement of minority carrier lifetime in GaAs1? x P x ( x =0.4; 0.65) by nitrogen implantation

Minority carrier lifetimes in nitrogen implanted GaAs_1-x P _x (x=0.4; 0.65) were measured at 77K by an optical phase shift method as a function of nitrogen dose and annealing temperature in order to investigate the dependence of the lifetime on the concentration of nitrogen isoelectronic traps. A large increase in the lifetime was observed after nitrogen implantation followed by annealing at and above 800°C. The maximum lifetimes were 22ns for GaAs_0.35P_0.65 and 6.7 ns for GaAs_0.6P_0.4. They were obtained by implantation to a dose of 5×10¹³ cm⁻² in GaAs_0.35P_0.65 and 10¹³ cm⁻² in GaAs_0.6P_0.4. The lifetime after nitrogen implantation followed by annealing was longer by a factor of 6–7 than that of the unimplanted sample.     

Determination of photoexcited carrier concentration and mobility in GaAs doping superlattices by hall effect measurements

The photo-Hall effect in a new type of periodicp-n doping multilayer structures (superlattices) of GaAs grown by molecular beam epitaxy has been investigated. In these space charge systems electrons and holes are separated in real space. As a consequence, large deviations from thermal equilibrium become quasi-stable. Carrier generation by optical absorption occurs in these doping superlattices even at photon energies far below the gap of the homogeneous semiconductor material. The photoexcitation results in a strong enhancement of the conductivityparallel to the layers and in a substantial photovoltaic response. An increase in carrierconcentration as well as an increase in carriermobility both contribute to the observed enhancement of the conductivity under excitation. The absolute values of changes in free-carrier concentration are very large due to the manyfold active layers of the structure. The measured free-carrier mobilities depend on the population of the multilayer system. A reduction in mobility as compared to bulk material is found to be more pronounced in weakly populated systems. This finding is caused by the larger weight of the boundary regions of the total active layers where the free-carrier density is lower than the density of ionized impurities resulting in an enhanced impurity scattering.     

Two-dimensional electronic transport in In0.53Ga0.47As quantum Wells

Transport properties of the electrons itinerant two dimensionality in a square quantum well of In_0.53Ga_0.47As are studied in the framework of Fermi-Dirac statistics including the relevant scattering mechanisms. An iterative solution of the Boltzmann equation shows that the ohmic mobility is controlled by LO phonon scattering at room temperature, but below 130 K alloy scattering is predominant. The calculated mobilities with a suitable value of the alloy scattering potential agree with the experimental results over a range of lattice temperature. For lattice temperatures below 25 K where the carrier energy loss is governed by the deformation potential acoustic scattering, the warm electron coefficient is found to be negative. Its magnitude decreases with increasing lattice temperature and is greater for larger channel widths. Values of the small-signal AC mobility of hot electrons at a lattice temperature of 4.2 K are obtained for different sheet carrier densities and channel widths. Cut-off frequencies around 100 GHz are indicated.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

STM investigation of the adsorption and temperature dependent reactions of ethylene on Pt(111)

The adsorption and reactions of ethylene adsorbed in UHV on Pt(111) have been studied as a function of temperature by STM. The STM images taken at 160K show an ordered structure of adsorbed ethylene. Annealing to 300 K produces ethylidyne (C-CH₃) irreversibly, as has been demonstrated by a wide variety of surface science techniques. The ethylidyne on Pt(111) is not visible to the STM at room temperature. Cooling the sample allows direct observation of the ethylidyne ordered structure by STM. Annealing above 430 K results in further dehydrogenation, eventually leaving only carbon on the surface. The decomposition products appear as small clusters which are localized and uniformly distributed over the surface. Further annealing to temperatures >800 K results in the growth of graphite islands on the Pt(111) surface. The annealed graphite islands exhibit several supersturctures with lattice parameters of up to 22 Å, which are thought to result from the higher order commensurability with the Pt(111) substrate at different relative rotations.     

Surface-acoustic-wave-induced space-charge waves in electron-hole systems

Space-charge waves in an electron-hole system are studied, which are excited by a moving grating provided by a surface acoustic wave (SAW). The SAW induces a constant current that may change its sign, when a constant electric field is applied opposite to the wave propagation direction. Current resonances are predicted to appear, when the SAW wavelength and frequency match the ones of the space-charge wave.