Surface Structure and Electronic Property of InP（001）-（2×1）S Surface： A First-Principles Study

The surface structure and electronic property of InP（001）-（2 ×1）S surface under S-rich condition are investigated based on first-principles simulations. The analyses of phase transition show that the 3B model is the most stable structure and the S-S dimer is difficult to form. The geometry of the 3B structure agrees well with the experiments. It is also found that the 3B structure has a good passivation with a band gap of about 1.24eV. The results indicate that the 3B structure is the best candidate for the sulfur-rich InP（001）（2 × 1）A phase.     

First Principles Study of Half Metallic Properties of VSb Surface and VSb/GaSb （001） Interface

The structural, electronic, and magnetic properties of VSb in zincblende, and NiAs phases, VSb （001） film surfaces and its interfaces with GaSh （001） have been investigated within the framework of the density functional theory using the FPLAPW＋lo approach. The NiAs structure is more stable than the ZB phase, ZB VSb is found to a half-metallic ferromagnetic. The V-terminated surfaces retain the half-metallic character, while the half-metallicity is destroyed for Sb-terminated surfaces due to surface states, which originate from p electrons. The phase diagram obtained through the ab-initio atomistic thermodynamics shows that the formation energy of ZB VSb is about 0.1 Ryd. The half-metallicity character is also preserved at VSb/GaSb （001） interface. The conduction band minimum （CBM） of VSb in the minority spin case lies about 0.47 eV above that of GaSb, suggesting that the majority spin can be injected into GaSb without being flipped to the conduction bands of the minority spin.     

Dissociative Chemisorption of an H2（v,j） Molecule on Rigid Ni （100） Surface： Dependence on Surface Topologies and Initial Rovibrational States of the Molecules

The H2(v,j) Ni(100) collision system has been studied to understand the effects of the surface sites and initial rovibrational states of the molecule on molecule-surface interactions, by a quasiclassical molecular dynamic simulation method. Dissociative adsorption of an H2 molecule on the rigid Ni(100) surface is investigated at topologically different three sites of the surface. Interaction between the molecule and Ni surface was described by a London-Eyring-Polani-Sato (LEPS) potential. Dissociative chemisorption probabilities of the H2(v, j) molecule on various sites of the surface are presented as a function of the translation energies between 0.001-1.0eV. The probabilities obtained at each collision site have unique behaviour. At lower collision energies, indirect processes enhance the reactivity, effects of the rotational excitations and impact sites on the reactivity are more pronounced. The results are compared with the available studies. The physical mechanisms underlying the results and quantum effects are discussed.     

Surface reconstruction on stishovite Si02, HfO2 and rutile TiO2 （001）

This paper systematically investigates the surface reconstruction processes and patterns on stishovite SiO2, HfO2 and rutile TiO2 （001） by using classical molecular dynamics. It is found that these three surfaces relax instead of reconstruction at 0 K, and have little possibility to reconstruct below 40 K. Above 40 K, surface reconstructions take place as collective atomic motion which can be speeded by higher temperature or compressed strain. Several reconstruction patterns with approximate surface energies are found, and electrostatic potentials on them are also provided in comparison with possible microscopic results.     

Surface rumples and band gap reductions of cubic BaZrO3 （001） surface studied by means of first-principles calculations

Electronic properties of the （001） surface of cubic BaZrO3 with BaO and ZrO2 terminations have been studied using first-principles calculations. Surface structure, partial density of states, band structure and surface energy have been obtained. We find that the largest relaxation appears in the first layer of atoms, and the relaxation of the BaO-terminated surface is larger than that of the ZrO2-terminated surface. The surface rumpling of the BaO-terminated surface is also larger than that of the ZrO2-terminated surface. Results of surface energy calculations reveal that the BaZrO3 surface is likely to be more stable than the PbZrO3 surface.     

Cumulants in the 3-dimensional Ising,O（2） and O（4） spin models

Based on the universal properties of a critical point in different systems and that the QCD phase transitions fall into the same universality classes as the 3-dimensional Ising, O（2） or O（4） spin models, the critical behavior of cumulants and higher cumulant ratios of the order parameter from the three kinds of spin models is studied. We found that all higher cumulant ratios change dramatically the sign near the critical temperature. The qualitative critical behavior of the same order cumulant ratio is consistent in these three models.     

Step instability of the surface during Ino.2Gao.sAs （001） annealing

Anisotropic evolution of the step edges on the compressive-strained In0.2Ga0.8As/GaAs（001） surface has been investigated by scanning tunneling microscopy （STM）. The experiments suggest that step edges are indeed sinuous and protrude somewhere a little way along the [110] direction, which is different from the classical waviness predicted by the theoretical model. We consider that the monatomic step edges undergo a morphological instability induced by the anisotropic diffusion of adatoms on the terrace during annealing, and we improve a kinetic model of step edge based on the classical Burton Cabrer-Frank （BCF） model in order to determine the normal velocity of step enlargement. The results show that the normal velocity is proportional to the arc length of the peninsula, which is consistent with the first result of our kinetic model. Additionally, a significant phenomenon is an excess elongation along the [110] direction at the top of the peninsula with a higher aspect ratio, which is attributed to the restriction of diffusion lengths.     

Rotational and Vibrational State Distributions of CsH and Relative Reactivity in Reactions of Cs（6^2D,7^2D） with H2

By using a pump-probe technique, the nascent rotational and vibrational state distributions of CsH are obtained in the Cs（6^2 D,7^2 D） plus H2 reaction. The nascent CsH molecules are found to populate the lowest two vibrational （v″ = 0 and 1） levels of the ground electronic state. By comparing the spectral intensities of the CsH action spectra with those of pertinent Cs atomic fluorescence excitation spectra, the relative reactivity with 1-12 is in an order of6^2D3/2 〉 6^2D5/2 〉 7^2D3/2 〉 7^2D5/2. The rotational temperatures are found to be slightly below the cell temperature. The relative fractions （〈fV〉, 〈fR〉, 〈fT〉） of average energy disposal are derived as （0.2,0.12,0.68）, （0.2,0.12,0.68）, （0.07,0.04,0.89） and （0.07,0.04,0.89） for the 6^2D3/2, 6^2D5/2, 7^2D3/2 and 7^2D5/2, respectively. The major available energy is released as translation. These results support that the reaction mechanism of Cs（6^2 D,7^2 D） plus 112 is primarily a eollinear abstraction and not an insertion.     

A density functional theory study on the adsorption of CO and O2 on Cu-terminated Cu2O （111） surface

The adsorptions of CO and 02 molecules individually on the stoichiometric Cu-terminatcd Cu20 （111） surface are investigated by first-principles calculations on the basis of the density functional theory. The calculated results indicate that the CO molecule preferably coordinates to the Cu2 site through its C atom with an adsorption energy of-1.69 eV, whereas the 02 molecule is most stably adsorbed in a tilt type with one O atom coordinating to the Cu2 site and the other O atom coordinating to the Cul site, and has an adsorption energy of -1.97 eV. From the analysis of density of states, it is observed that Cu 3d transfers electrons to 2π orbital of the CO molecule and the highest occupied 5σ orbital of the CO molecule transfers electrons to the substrate. The sharp band of Cu 4s is delocalized when compared to that before the CO molecule adsorption, and overlaps substantially with bands of the adsorbed CO molecule. There is a broadening of the 2π orbital of the 02 molecule because of its overlapping with the Cu 3d orbital, indicating that strong 3d-2π interactions are involved in the chemisorption of the 02 molecule on the surface.     

Evolution from Diffuse Ferroelectric to Relaxor Ferroelectric in Pb1-xBax（Fe1/2Nb1/2）O3 Solid Solutions

Dielectric and ferroelectric characteristics for Pb1-xBax（Fe1/2Nh/2）O3 （x = 0,0.05,0.1,0.15, and 0.2） ceramics are determined together with their structures. X-ray diffraction （XRD） analysis confirms the solid solutions with the cubic structure. The dielectric nature changes from diffuse ferroelectric to relaxor ferroelectric with increasing x, while the phase transition temperature Tc （or Tm） decreases monotonously. The diffuse ferroelectric phase transition is observed in the solid solutions with 0≤x ≤0.05. For Pbl-xBax（Fe1/2Nb1/2）O3 with 0.1≤ x≤0.2, relaxor ferroelectric behavior is determined, and the Vogel-Fulcher equation is used to describe the relaxor behavior. The 1/ε versus T plots reveal the diffusion dielectric characteristics in both diffuse and relaxor ferroelectrics.     

Atomic Layer Deposition of Al2O3 on H-Passivated GeSi： Initial Surface Reaction Pathways with H/GeSi（100）-2 × 1

The reaction mechanisms of Al（CH3 ）3 （TMA） adsorption on H-passivated GeSi（100）-2 × 1 surface are investigated with density functional theory. The Si-Ge and Ge-Ge one-dimer cluster models are employed to represent the GeSi（100）-2 × 1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si-H^＊ and Ge-H^＊ sites is considered. The activation barrier of TMA with the Si-H^＊ site （1.2eV） is higher than that of TMA with the Ge-H^＊ site （0.91 eV）, which indicates that the reaction proceeds more slowly on the Si-H^＊ site than on the Ge-H^＊ site. In addition, adsorption of TMA is more energetically favorable on the Ge-Ge dimer than on the Si-Ge dimer of H-passivated SiGe.     

Effects of BaCu（B2Os） addition on sintering temperature and microwave dielectric properties of BasNb4O15-BaWO4 ceramics

The effects of BaCu（B2Os） （BCB） addition on the microstructure, phase formation, and microwave dielectric proper- ties of BasNb4015-BaWO4 ceramic are investigated. As a sintering aid, BaCu（B2Os） ceramic could effectively lower the sintering temperature of BasNb4015-BaWO4 ceramic from 1100 ℃ to 950 ℃ due to the liquid-phase effect. Meanwhile, BaCu（B2Os） addition effectively improves the densification of BasNb4015-BaWO4 ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that BasNb4015 and BaWO4 coexist with no crystal phase of BaCu（B2Os） in the sintered ceramics. The BasNb4015-BaWO4 ceramics with 1.0 wt% BaCu（B2Os） sintered at 950 ℃ for 2 h presents good microwave dielectric properties of er = 19.0, high Q× f of 33802 GHz and low vf of 2.5 ppm/℃.     

Mechanism of the excitation of single pure mode L（0, 2） and its interaction with the defect in a hollow cylinder

Guided elastic waves have a great potential in pipe inspection as an efficient and low-cost nondestructive evaluation （NDE） technique, among which the wave of mode L（0, 2） receives a lot of attention because this mode is the fastest mode in a weakly dispersive region of frequency to minimize dispersion effects over a long distance and sensitive to the defects distributed circumferentially. Though many experimental and numerical researches have already been carried out about the excitation of L（0, 2） and its interaction with the defect in a hollow cylinder, its excitation mechanism has not been clarified yet. In this paper based on the transient response solution of the hollow cylinder, derived by the method of eigenfunction expansion, the theory about the exciting mechanism of mode L（0, 2） is advanced and the effects of the spatial distribution, vibration frequency and direction of the external force on the excitation are discussed. And the pure mode L（0, 2） is excited successfully under the parameters obtained through theoretical analysis. Furthermore, its interactions with some kinds of defects in hollow cylinders are simulated with the method of finite element analysis （FEA） and the results agree well with those obtained by other researchers.     

Structures and luminescence properties of Yb3＋ in the double perovskites Ba2YB＇O6 （B＇=Ta5＋, Nb5＋） phosphors

The Yb³⁺ doped Ba₂YB'O₆ (B'=Ta⁵⁺, Nb⁵⁺) were prepared by high temperature solid-state reaction method, their structures were determined by x-ray diffraction and refined by Rietveld method. The diffuse reflection absorption, excitation and emission spectra of Yb³⁺:Ba₂YB'O₆ (B'=,Ta⁵⁺, Nb⁵⁺) were measured at room temperature. Under the excitation of ultraviolet light, these phosphors exhibit broad charge transfer band emissions of TaO₆ or NbO₆ centre with large Stokes shift. The Yb³⁺ doped into these hosts are situated at Y³⁺ sites of cubic symmetry (O_h). The experimental energy levels of Yb³⁺ in Ba₂YTaO₆ and Ba₂YNbO₆ were determined by photoluminescence and diffuse reflection absorption spectra. Their wavefunctions and theoretical energy levels were obtained by diagonalising the Hamiltonian matrix. The experimental energy levels were fitted by Levenberg--Marquardt iteration algorithm to determine crystal field parameters. Then, the magnetic-pole transition line strengths of Yb³⁺:Ba₂YB'O₆(B'=Ta⁵⁺, Nb⁵⁺) from (²F_5/2)Γ₈^- to the low-energy states were calculated.