Tunneling conductance in quantum wire/insulator/dx2 -y2 + idxy mixed wave superconductor junctions

Using the extended Blonder-Tinkham-Klapwijk (BTK) theory, this paper calculates the tunnelling conductance in quantum wire/insulator/dx2-y2 + idxy mixed wave superconductor (q/I/dx2-y2 + idxy) junctions. That is different from the case in d- and p-wave superconductor junctions. When the angle α between a-axis of the dx2-y2 wave superconductor and the interface normal is π/4, there follows a rather distinctive tunnelling conductance. The zero-bias conductance peak (ZBCP) may or may not appear in the tunnelling conductance. Both the interface potential z and the quasi-particle lifetime factor Γ are smaller, there is no ZBCP. Otherwise, the ZBCP will appear. The position of bias conductance peak (BCP) depends strongly on the amplitude ratio of two components for dx2-y2 + idxy mixed wave. The low and narrow ZBCP may coexist with the BCP in the tunnelling conductance. Using those features in the tunnelling conductance of q/I/dx2-y2 + idxy junctions, it can distinguish dx2-y2 + idxy mixed wave superconductor from d- and p-wave one.     

Suppression of Andreev conductance in a topological insulator–superconductor nanostep junction

When two three-dimensional topological insulators(TIs) are brought close to each other with their surfaces aligned,the surfaces form a line junction. Similarly, three TI surfaces, not lying in a single plane, can form an atomic-scale nanostep junction. In this paper, Andreev reflection in a TI–TI–superconductor nanostep junction is investigated theoretically. Because of the existence of edge states along each line junction, the conductance for a nanostep junction is suppressed. When the incident energy(ε) of an electron is larger than the superconductor gap(?), the Andreev conductance in a step junction is less than unity while for a plane junction it is unity. The Andreev conductance is found to depend on the height of the step junction. The Andreev conductance exhibits oscillatory behavior as a function of the junction height with the amplitude of the oscillations remaining unchanged when ε = 0, but decreasing for ε = ?, which is different from the case of the plane junction. The height of the step is therefore an important parameter for Andreev reflection in nanostep junctions, and plays a role similar to that of the delta potential barrier in normal metal–superconductor plane junctions.     

Differential conductance in normal-metal/insulator/metal/d-wave superconductor junction carrying a supercurrent

This paper applies the Bogoliubov--de Gennes equation and the Blonder--Tinkham--Klapwijk approach to study the oscillatory behaviour of differential conductance in a normal metal/insulator/metal/d-wave superconductor junction carrying a supercurrent I_s. We find that (i) a three-humped structure appears at a nearly critical supercurrent I_s and z ≈ 0.5 for the normal metal/insulator/metal/d_x² + y²-wave superconductor junction; (ii) the zero-bias conductance peak splits into two peaks with sufficiently large applied current for the normal metal/insulator/metal/d_xy-wave superconductor junction; (iii) the conductance spectrum exhibits oscillating behaviour with the bias voltage and the peaks of the resonances are suppressed by increasing supercurrent I_s.     

Coherence effects in S/I/N/I/FS tunnel junctions

The dc Josephson effect in superconductor / insulator / normal metal / insulator/ferromagnetic superconductor junctions has been studied. We calculate the de Josephson current based on the Bogoliubov de Gennes equation. The Josephson current is derived as a function of exchange field in ferromagnetic superconductor, normal metal thickness and insulating barrier strength. It is found that there exists an oscillation relation between the critical Josephson current and the normal metal thickness. The oscillation amplitude decreases as the thickness of the normal metal increases or the exchange field augments.[第一段]     

Enhancement of subgap conductance in a graphene superconductor junction by valley polarization

We theoretically study the differential conductance of a graphene/graphene superconductor junction, where the valley polarization of Dirac electrons is considered in the nonsuperconducting region. It is shown that the subgap conductance will increase monotonically with the valley-polarization strength when the chemical potential μ is near the Dirac point μ≤ 3?(? is the superconducting gap), whereas it will decrease monotonically when μ is far away from the Dirac point, μ≥ 5?.The former case is induced by the specular Andreev reflection while the retro-reflection accounts for the later result. Our findings may shed light on the control of conductance of a graphene superconductor junction by valley polarization.     

Spin-Triplet Andreev Reflection in Ferromagnet/Ferromangnet/s-Wave Superconductor Junctions

Four-component Bogoliubov-de Gennes equations are applied to study the tunnelling conductance spectra G（ E） of half-metallic ferromagnet/ferromagnet/s-wave superconductor tunnel junctions. It is found that only for noncollinear magnetizations, there exists nonzero G（ E） structure within the energy gap, which is a signature of appearance of the novel Andreev reflection and spin-triplet pairing correlations.     

Quantum interference effects in a multidriven transition Fg=3←→Fe=2

We have theoretically and experimentally studied the quantum coherence effects of a degenerate transition Fg =3←→Fe=2 system interacting with a weak linearly polarized （with σ＋ components） probe light and a strong linearly polarized （with σ＋ components） coupling field. Due to the competition between the drive Rabi frequency and the Zeeman splitting, electromagnetically induced transparency （EIT） and electromagnetically induced absorption （EIA） are present at the different values of applied magnetic field in the case where the Zeeman splitting of excited state Δe is larger than the Zeeman splitting of ground state Δg （i.e.Δe 〉 Δg）.     

Electron with arbitrary pseudo-spins in multilayer graphene

Using the low-energy effective Hamiltonian of the ABC-stacked multilayer graphene, the pseudo-spin coupling to real orbital angular momentum of electrons in multilayer graphene is investigated. We show that the electron wave function in N-layer graphene mimics the behavior of a particle with a spin of N ×( /2), where N = {1, 2, 3,...}. It is said that for N 1 the low-energy effective Hamiltonian for ABC-stacked graphene cannot be used to describe pseudo-spin-1/2particles. The wave function of electrons in multilayer graphene may behave like fermionic(or bosonic) particle for N being odd(or even). In this paper, we propose a theory of graphene serving as a host material of electrons with arbitrary pseudo-spins tunable by changing the number of graphene layers.     

Switching effects in superconductor/ferromagnet/superconductor graphene junctions

The Josephson effect in the superconductor/ferromagnet/superconductor （SFS） graphene Josephson junction is studied using the Dirac Bogoliubov-de Gennes （DBdG） formalism. It is shown that the SFS graphene junction drives 0–π transition with the increasing of p=h0L/vF？, which captures the effects of both the exchange field and the length of the junction; the spin-down current is dominant. The 0 state is stable for p 〈 pc （critical value pc ≈ 0.80） and the π state is stable for p 〉 pc, where the free energy minima are at φg=0 and φg=π, respectively. The coexistence of the 0 and π states appears in the vicinity of pc.     

Fabrication of Intrinsic Josephson Junctions on BI2Sr2CaCu2O8＋δ Single Crystals with Reproducible Surface Junctions

Intrinsic Josephson junctions on Bi2Sr2CaCu2O8 δ single crystals are successfully fabricated using photolithography and Ar jon milling .Here we discuss the properties of the surface CuO2/metal bilayers and surface junctions prepared with different crystal cleavage conditions and metal film deposition techniques.We show that,by cleaving the crystal at liquid nitrogen temperature in vacuum,the contents of the (interstitial) oxygen in the Bi-O layers become stable upon cleavage,leading to a CuO2/metal bilayer and to surface junctions with reproducible properites,These results can be useful for practical device fabrications as well as for the studies of the contact properties between high Tc superconductors and normal metals.     

Bipartite entanglement in spin-1/2 Heisenberg model

The bipartite entanglement of the two- and three-spin Heisenberg model was investigated by using the concept of negativity. It is found that for the ground-state entanglement of the two-spin model, the negativity always decreases as B increases if Δ<γ－1, and it may keep a steady value of 0.5 in the region of B2－γ²]^1/2 if Δ>γ－1, while for that of the three-spin model, the negativity exhibits square wave structures if γ=0 or Δ=0. For thermal states, there are two areas showing entanglement, namely, the main region and the sub-region. The main region exists only when Δ>Δ_c (Δ_c=γ－1 and (γ²－1)/2 for the 2- and 3-spin model respectively) and extends in terms of B and T as Δ increases, while the sub-region survives only when γ≠0 and shrinks in terms of B and T as Δ increases.     

Josephson Effect in FS/I/N/I/FS Tunnel Junctions

The Bogoliubov de Gennes equation is applied to the study of coherence effects in the ferromagnetic superconductor/insulator/normal metal/insulator/ferromagnetic/superconductor （FS/I/N/I/FS） junction. We calculated the Josephson current in FS/I/N/I/FS as a function of exchange field in ferromagnetic superconductor, temperature, and normal metal thickness. It is found that the Josephson critical current in FS/I/N/I/FS exhibits oscillations as a function of the length of normal metal. The exchange field always suppresses the Josephson critical current Ip for a parallel configuration of the magnetic moments of two ferromagnetic superconductor （FS） electrodes. In the antiparallel configuration, the Josephson critical current IAv at the minimum values of oscillation increases with the exchange field for strong barrier strength and at low temperatures.     

Infrared Absorption Spectra of Undoped and Doped Few-Layer Graphenes

The infrared absorption spectra of undoped few-layer graphenes with the layer number of N = 1-6, the hole- and electron-doped few-layer graphenes with the layer number of N =1-4 have been studied based upon the tight-binding model. It is found that in contrast with the featureless optical spectrum of the undoped monolayer graphene, the undoped AB-stacking bi-, tri-, tetra- and more-layer graphene exhibit characteristic jumps in their infrared absorption （IR） spectra, which are caused by coupling between different layers. It is also found that the clear peaks exist in the IR spectra of the hole or electron-doped hi-, tri- and tetra-layer graphenes, which are induced by the strong IR transitions between their parallel valence or conduction bands. Based upon their different IR spectra, a powerful experimental tool has been proposed to identify accurately the layer number and doping type for the few-layer graphenes.     

Transport properties in monolayer–bilayer–monolayer graphene planar junctions

The transport study of graphene based junctions has become one of the focuses in graphene research. There are two stacking configurations for monolayer–bilayer–monolayer graphene planar junctions. One is the two monolayer graphene contacting the same side of the bilayer graphene, and the other is the two-monolayer graphene contacting the different layers of the bilayer graphene. In this paper, according to the Landauer–Büttiker formula, we study the transport properties of these two configurations. The influences of the local gate potential in each part, the bias potential in bilayer graphene,the disorder and external magnetic field on conductance are obtained. We find the conductances of the two configurations can be manipulated by all of these effects. Especially, one can distinguish the two stacking configurations by introducing the bias potential into the bilayer graphene. The strong disorder and the external magnetic field will make the two stacking configurations indistinguishable in the transport experiment.     

Polarization-independent terahertz wave modulator based on graphene-silicon hybrid structure

In this study, we propose and demonstrate a broadband polarization-independent terahertz modulator based on graphene/silicon hybrid structure through a combination of continuous wave optical illumination and electrical gating.Under a pump power of 400 mW and the voltages ranging from-1.8 V to 1.4 V, modulation depths in a range of-23%–62% are achieved in a frequency range from 0.25 THz to 0.65 THz. The modulator is also found to have a transition from unidirectional modulation to bidirectional modulation with the increase of pump power. Combining the Raman spectra and Schottky current–voltage characteristics of the device, it is found that the large amplitude modulation is ascribed to the electric-field controlled carrier concentration in silicon with assistance of the graphene electrode and Schottky junction.     

Phase coherence of the electron and hole in a ferromagnetic film in proximity with a superconductor

The scattering matrix approach between the clean and dirty limits is developed for the study of tunneling spectra in a ferromagnetic film in proximity to a superconductor. The minigap and the damped oscillation from ``0" to ``π" state in tunneling conductance are attributed to the phase coherence of the electrons and the corresponding Andreev-reflected holes in the ferromagnetic film. The calculated results provide a reasonable explanation for the behavior observed in recent experiments.     

The 0–π Phase Transition in Epitaxial NbN/Ni_(60)Cu_(40)/NbN Josephson Junctions

We fabricate high quality superconductor/ferromagnet/superconductor(SFS) Josephson junctions using epitaxial NbN/Ni_(60)Cu_(40)/NbN trilayer heterostructures. Both experimental measurements and theoretical calculations of the ferromagnet layer thickness dependence of the Josephson critical current are performed. We observe the damped oscillation behavior of the critical current as a function of the ferromagnetic layer thickness at 4.2 K,which shows a 0–π phase transition in this type of magnetic Josephson junction. Clear 0– and reverse –0 phase transitions occur around the Ni_(60)Cu_(40) thicknesses of 3.2 and 6.7 nm. Numerical calculations based on the quasi-classical Usadel equation and the Green function fit well with the experimental results. Compared with the dirty limit, the intermediate regime without the dead layer gives better fit for our SFS Josephson junctions because of the epitaxial structure. Both of the 0-and -phase junctions show the ideal magnetic field dependence with a Fraunhofer-like pattern at 4.2 K.     

Study on wave packet dynamics of E~1Σ_g~+ state of Li_2 with femtosecond-resolved photoelectron spectra

Wave packet dynamics of the Li₂ molecule are investigated by using the time-dependent quantum wave packet method, and the time-resolved photoelectron spectra of the Li₂ molecule are calculated. The time-resolved wave packet theory is used to reasonably interpret the phenomena of the photoelectron spectra for different parameters. Our calculation shows that the loss of the wave packets in the shelf state area of E{ }^1\Sigma_g^ + plays a prominent role in the process of photoionization with the increase of the delay time. Moreover, the oscillation of the wave packet on the E{ }^1\Sigma_g^ + curve symbolizes a decreasing process of energy.     

Thermoelectric-transport in metal/graphene/metal hetero-structure

We investigate the thermoelectric-transport properties of metal/graphene/metal hetero-structure. We use a single band tight-binding model to present the two-dimensional electronic band structure of graphene. Using the Landauer--Butticker formula and taking the coupling between graphene and the two electrodes into account, we can calculate the thermoelectric potential and current versus temperature. It is found that in spite of metal electrodes, the carrier type of graphene determines the electron motion direction driven by the difference in temperature between the two electrodes, while for n type graphene, the electrons move along the thermal gradient, and for p type graphene, the electrons move against the thermal gradient.     

Conductance of metallic nanoribbons with defects

The conductances of two typical metallic graphene nanoribbons with one and two defects are studied using the tight binding model with the surface Green’s function method. The weak scattering impurities, U ～ 1 eV, induce a dip in the conductance near the Fermi energy for the narrow zigzag graphene nanoribbons. As the impurity scattering strength increases, the conductance behavior at the Fermi energy becomes more complicated and depends on the impurity location, the AA and AB sites. The impurity effect then becomes weak and vanishes with the increase in the width of the zigzag graphene nanoribbons (150 nm). For the narrow armchair graphene nanoribbons, the conductance at the Fermi energy is suppressed by the impurities and becomes zero with the increase in impurity scattering strength, U > 100 eV, for two impurities at the AA sites, but becomes constant for the two impurities at the AB sites. As the width of the graphene nanoribbons increases, the impurity effect on the conductance at the Fermi energy depends sensitively on the vacancy location at the AA or AB sites.