Stochastic Four-State Mechanochemical Model of F1-ATPase

F₁-ATPase, a part of ATP synthase, can synthesize and hydrolyze ATP moleculars in which the central γ-subunit rotates inside the α₃β₃ cylinder. Astochastic four-state mechanochemical coupling model of F$_{1}$-ATPase isstudied with the aid of the master equation. In this model, the ATPhydrolysis and synthesis are dependent on ATP, ADP, and Pi concentrations.The effects of ATP concentration, ADP concentration, and the external torqueon the occupation probability of binding-state, the rotation rate and thediffusion coefficient of F₁-ATPase are investigated. Moreover, theresults from this model are compared with experiments. The mechanochemicalmechanism F₁-ATPase is qualitatively explained by the model.     

Thermodynamic Performance Characteristics of a Brownian Microscopic Heat Engine Driven by Discrete and Periodic Temperature Field

A Brownian microscopic heat engine with a particle hopping on a one-dimensional lattice driven by a discrete and periodic temperature field in a periodic sawtooth potential is investigated. In order to clarify the underlying physical pictures of the heat engine, the heat flow via the potential energy and the kinetic energy of the particles are considered simultaneously. Based on describing the jumps among the three states, the expressions of the efficiency and power output of the heat engine are derived analytically. The general performance characteristic curves are plotted by numerical calculation. It is found that the power output-efficiency curve is a loop-shaped one, which is similar to one for a real irreversible heat engine. The influence of the ratio of the temperature of the hot and cold reservoirs and the sawtooth potential on the maximum efficiency and power output is analyzed for some given parameters. When the heat flows via the kinetic energy is neglected, the power output-efficiency curve is an open-shaped one, which is similar to one for an endroeversible heat engine.     

Short-Time Effects of Environment to Josephson Charge Qubit： A Master Equation Approach

In this paper we investigate an environmental effects to Josephson charge qubit （JCQ） when the environment is taken as the Ohmic bath. At first, we derive the master equation from a JCQ-bath model. Then we investigate the coefficients of the equations that describe the shift in frequency, diffusive, decoherence, and so on. It is shown that our result on decoherence agrees with experimental one very well as the time is short enough.     

Solving nonlinear master equation describing quantum damping by virtue of the entangled state representation

This paper solves the newly constructed nonlinear master equation dρ/dt=κ[2f (N) aρ (1/f (N-1))a+-a+aρ-ρa+a],where f(N) is an operator-valued function of N=a+a,for describing amplitude damping channel,and derives the infinite operator sum representation of quasi-Kraus operators for the density operator.It also shows that in this nonlinear process the initial pure number state density operator will evolve into the binomial field (a mixed state) when f (N)=1/(N+1)～(1/2).     

New approach to solving master equations of density operator for the Jaynes Cummings model with cavity damping

By introducing thermo-entangled state representation |η>, which can map master equations of density operator in quantum statistics as state-vector evolution equations, and using "dissipative interaction picture" we solve the master equation of Jaynes–Cummings model with cavity damping. In addition we derive the Wigner function for density operator when the atom is initially in the up state |↑> and the cavity mode is in coherent state.     

Evolution law of a negative binomial state in an amplitude dissipative channel

For the first time we derive the evolution law of the negative binomial state In） （nI in an ampli-tude dissipative channel with a damping constant to. We find that after passing through the channel, the final state is still a negative binomial state, however the parameter γ evolves into The decay law of theaverage photon number is also obtained.     

Long-time limit behavior of the solution to an atom＇s master equation

We study the long-time limit behavior of the solution to an atom＇s master equation. For the first time we derive that the probability of the atom being in the α-th （α = j ＋ 1 -jz, j is the angular momentum quantum number, jz is the z-component of angular momentum） state is {（1 - K/G）/[1 - （K/G）2j＋1]}（K/G）^α-1 as t → ＋∞, which coincides with the fact that when K/G 〉 1, the larger the a is, the larger the probability of the atom being in the α-th state （the lower excited state） is. We also consider the case for some possible generaizations of the atomic master equation.     

Master equation describing the diffusion process for a coherent state

The evolution of a pure coherent state into a chaotic state is described very well by a master equation, as is validated via an examination of the coherent state＇s evolution during the diffusion process, fully utilizing the technique of integration within an ordered product （IWOP） of operators. The same equation also describes a limitation that maintains the coherence in a weak diffusion process, i.e., when the dissipation is very weak and the initial average photon number is large. This equation is dp/dt = -κ[a＋ap -a＋pa -apa＋ ＋ paa＋]. The physical difference between this diffusion equation and the better-known amplitude damping master equation is pointed out.     

Differential cross sections for electron impact excitation of molecular hydrogen using the momentum-space multichannel optical method

In the present work, the momentum-space multichannel optical method is employed in four-state close-coupling calculations to study the electronic excitation of H_2 molecules by electron-impact. Particularly, differential cross sections for the X~1Σ_g~+→ b~3Σ_u~+, X~1Σ_g~+→ aΣ_g~+, and X~1Σ_g~+→ c~3Π_u transitions are reported. Comparison is made with the available experimental and theoretical results.     

An improved EEHEMT model for kink effect on AIGaN/GaN HEMT

In this paper, a new current expression based on both the direct currect （DC） characteristics of the A1GaN/GaN high election mobility transistor （HEMT） and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the A1GaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of Ⅰ-Ⅴ, S-parameter, and radio frequency （RF） large-signal characteristics are compared for a self-developed on-wafer A1GaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-p-m wide （Such an A1GaN/GaN HEMT is denoted as A1GaN/GaN HEMT （10 × 125 μm））. The improved large signal model simulates the Ⅰ-Ⅴ characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.     

J/ψ→μ^＋μ^- reconstruction in the CMS experiment

In this paper the J/ψ→μ^＋μ^- reconstruction performance in the CMS experiment at the LHC is studied in detail by using B8→J/ψφ→μμKK events. The reconstruction efficiencies of J/ψ mesons and their decay muons are obtained as a function of the transverse momentum PT and the pseudo-rapidity η. We also study the muon trigger efficiency for this channel with the planned Level-1 trigger and High Level Trigger selection criteria. It was observed that the muon reconstruction efficiency decreases when the two decay muons have a small or large 3D angular separation, which further affects the overall J/ψ reconstruction efficiency.     

Effects of SiNx on two-dimensional electron gas and current collapse of A1GaN/GaN high electron mobility transistors

SiNx is commonly used as a passivation material for AlGaN/GaN high electron mobility transistors (HEMTs). In this paper, the effects of SiN x passivation film on both two-dimensional electron gas characteristics and current collapse of AlGaN/GaN HEMTs are investigated. The SiNx films are deposited by high- and low-frequency plasma-enhanced chemical vapour deposition, and they display different strains on the AlGaN/GaN heterostructure, which can explain the experiment results.     

Structural and optical properties of a NaCl single crystal doped with CuO nanocrystals

A cupric oxide (CuO) nanocrystal-doped NaCl single crystal and a pure NaCl single crystal are grown by using the Czochralski (Cz) method. A number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, Fourier transform infrared (FT-IR) spectroscopy, Raman spectroscopy, optical absorption in the UV-visible range, and photoluminescence (PL) spectroscopy are used to characterize the obtained NaCl and NaCl:CuO crystals. It is observed that the average radius of CuO crystallites in NaCl:CuO crystal is about 29.87 nm, as derived from the XRD data analysis. Moreover, FT-IR and Raman spectroscopy results confirm the existence of the monoclinic CuO phase in NaCl crystal. UV-visible absorption measurements indicate that the band gap of the NaCl:CuO crystal is 434 nm (2.85 eV), and it shows a significant amount of blue-shift (△Eg = 1 eV ) in the band gap energy of CuO, which is due to the quantum confinement effect exerted by the CuO nanocrystals. The PL spectrum of the NaCl:CuO shows a broad emission band centred at around 438 nm, which is consistent with the absorption measurement.     

Exact Solutions to （2＋1）-Dimensional Kaup-Kupershmidt Equation

In this paper, by using the symmetry method, the relationships between new explicit solutions and old ones of the （2＋1）-dimensional Kaup-Kupershmidt （KK） equation are presented. We successfully obtain more general exact travelling wave solutions for （2＋ 1）-dimensional KK equation by the symmetry method and the （G1/G）-expansion method. Consequently, we find some new solutions of （2＋1）-dimensional KK equation, including similarity solutions, solitary wave solutions, and periodic solutions.     

Study of new boson W±1 in the Minimal Higgsless Model at the LHC

The Minimal Higgsless Model predicts the existence of new vector gauge boson W1^±, By the process PP →W1^±qq →W^±Z^0qq, Z^0→ 1^＋1^-, W^±→ qq （1=e,μ; q is hadronized to be jets）, we study the sensitivity of searching for this possible vector gauge boson in the level of generator events of signal and backgrounds, then give integrated luminosity required to discover 5σ signal as a function of W1^± mass. The generator for the signal PP → W1^±qq →W^±Z^0qq at tree level is developed with the Minimal Higgsless Model and then interfaced with PYTHIA for the patton showers and hadronization. The backgrounds are produced with MadGraph and PYTHIA.     

First-principles investigation on the structural and elastic properties of cubic-Fe,TiAl under high pressures

The structural, elastic, and thermodynamic properties of cubic-Fe2TiA1 under high temperatures and pressures are investigated by performing ab initio calculation and using the quasi-harmonic Debye model. Some ground state properties such as lattice constant, bulk modulus, pressure derivative of the bulk modulus, and elastic constants are in good agreement with the available experimental results and theoretical data. The thermodynamic properties of Fe2TiA1 such as thermal expansion coefficient, Debye temperature, and heat capacity in ranges of 0 K-1200 K and 0 GPa-250 GPa are also obtained. The calculation results indicate that the heat capacities at different pressures all increase with temperature increasing and are close to the Dulong-Petit limit at higher temperatures, Debye temperature decreases with temperature increasing, and increases with pressure rising. The cubic-FezTiA1 is stable mechanically under 250 GPa. Moreover, under lower pressure, thermal expansion coefficient rises rapidly with temperature increasing, and the increasing rate becomes slow at higher pressure.     

Characterization of Al2O3/GaN/AIGaN/GaN metal- insulator-semiconductor high electron mobility transistors with different gate recess depths＊

In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor （MIS） high electron mobility transistors （HEMTs）, we demonstrate better performances of recessed-gate A1203 MIS-HEMTs which are fabricated by Fluorine-based Si3N4 etching and chlorine- based A1CaN etching with three etching times （15 s, 17 s and 19 s）. The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of A1GaN/CaN HEMT. Through the recessed-gate etching, the transconductanee increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with Tit----（0.20--1.59） p~s and Dit ：（0.55-1.08）x 1012 cm-2.eV- 1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AIGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time （15 s in this paper） can enhance the performances of MIS-HEMTs effectively.     

Low-resistance Ohmic contact on polarization-doped AIGaN/GaN heterojunction

High electronic density is achieved by polarization doping without an impurity dopant in graded AIGaN films. Low specific contact resistance is studied on the polarization-doped A1GaN/GaN heterojunctions by using the transmission line method （TLM）. The sheet density of polarization-doped A1GaN/GaN heterojunction is 6 × 10 14 cm-2 at room temperature. The linearly graded material structure is demonstrated by X-ray diffraction. The cartier concentration and mobility are characterized by a temperature-dependent Hall measurement. Multiple-layer metal （Ti/A1/Ti/Au） is deposited and annealed at 650 ℃ to realize the Ohmic contacts on the graded A1GaN/GaN heterojunctions.     

No-catalyst growth of vertically-aligned A1N nanocone field electron emitter arrays with high emission performance at low temperature

The A1N nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating A1N nanostructures, but high growth temperature over 800℃ and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned A1N nanocone arrays at 550℃ on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area.     

The structural,elastic, and electronic properties of ZrxNbl-xC alloys from first principle calculations＊

The structural, elastic, electronic, and thermodynamic properties of ZrxNbl xC alloys are investigated using the first principles method based on the density functional theory. The results show that the structural properties of Zr~.Nb1 xC alloys vary continuously with the increase of Zr composition. The alloy possesses both the highest shear modulus （215 GPa） and a higher bulk modulus （294 GPa）, with a Zr composition of 0.21. Meanwhile, the Zr0.2! Nb0.79C alloy shows metallic conductivity based on the analysis of the density of states. In addition, the thermodynamic stability of the designed alloys is estimated using the calculated enthalpy of mixing.