Coulomb Interaction in Quantum Dot with a Precessing Magnetic Field

We study electronic transport through a quantum dot （QD） with a precessing magnetic field. By using the Keldysh nonequilibrium Green function method, formulas of local density of states （LDOS） and conductance of QD are derived self-consistently. It shows that the LDOS and conductance have obvious changes with the Coulomb blockade interaction. The intensity and angle of the magnetic field or temperatures, which reflect the mesoscopic structure of the QD are derived. The superiority of this device is that the QD can be controlled easily by the magnetic field, so it is valuable to apply in generating, manipulating and probing spin state.     

Defects of SiC nanowires studied by STM and STS

For the first time the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) are employed to investigate the morphology and the surface electronic structure of the defective silicon carbide nanowires (SiCNWs). The SiCNWs produced via combustion synthesis route are studied. The STS measurements are performed in the current imaging tunneling spectroscopy mode (CITS) that allows us to determine the correlation between STM topography and the local density of electronic states (LDOS) around the bend of an isolated SiCNW. The measurements reveal fluctuations of LDOS in the vicinity of the defect. The local graphitisation and the inhomogeneous concentration of doping impurities (e.g. nitrogen, oxygen) are considered to explain these fluctuations of metallic-like LDOS in the vicinity of the SiCNW's deformation.     

Three-dimensional scanning force/tunneling spectroscopy at room temperature

We simultaneously measured the force and tunneling current in three-dimensional (3D) space on the Si(111)-(7 × 7) surface using scanning force/tunneling microscopy at room temperature. The observables, the frequency shift and the time-averaged tunneling current were converted to the physical quantities of interest, i.e. the interaction force and the instantaneous tunneling current. Using the same tip, the local density of states (LDOS) was mapped on the same surface area at constant height by measuring the time-averaged tunneling current as a function of the bias voltage at every lateral position. LDOS images at negative sample voltages indicate that the tip apex is covered with Si atoms, which is consistent with the Si-Si covalent bonding mechanism for AFM imaging. A measurement technique for 3D force/current mapping and LDOS imaging on the equivalent surface area using the same tip was thus demonstrated.     

Ab initio electronic structure of the Ge(111)-(2 × 1) surface in the presence of surface vacancy. Application to STM data analysis

We present the results of ab initio modeling of Ge(111)-(2 × 1) surface in the presence of atomic vacancy in surface bilayer. We showed that simple crystal structure defect affects surface electronic structure to the extent comparable with the influence of doping atom. We demonstrated the strong difference of surface LDOS structure above surface defects of different kind. We have proved that spatial oscillations of LDOS exist around individual surface vacancy in the same tunneling bias range as in case of donor doping atom on Ge(111)-(2 × 1) surface.     

分子结电学特性的理论研究

在第一性原理的基础上，对共扼分子2-氨基-5-硝基-1，4-二乙炔基-4’，-苯硫醇基苯(2-amino-5-nitro-1,4-diethyny-4’-benzenethiol-benzene)与金表面形成的分子结的电学特性进行了理论研究.利用密度泛函理论计算了该分子及扩展分子的电子结构；讨论了分子与金表面的相互作用，定量地确定了耦合常数，求出了电子的迁移强度；利用弹性散射格林函数法研究了该分子结的伏—安特性.计算结果表明，当外加偏压小于0.9V时分子结存在电流禁区，随着偏压升高，分子结的电导出现平台特 关键词： 化学吸附 分子结 分子电子学     

Graphene-based tunnel junction

The tunneling current in a junction formed by graphene half-planes and bilayer graphene with two possible packing types and two possible orientations of the crystal lattice is calculated by the Green’s function technique in the framework of the tight-binding approximation. It is shown that the band structure of graphene oriented toward the junction by the armchair-type edges leads to a power-law dependence of the tunneling current on applied voltage being specific for each specific kind of graphene. The characteristic features of this dependence are determined by the change in the number of transport channels with the growth of the applied voltage. For all junctions under study with zigzag edges oriented toward each other, it is found that the tunneling current exhibits characteristic peaks related to the existence of the localized edge states. The effects induced by the gate voltage are also studied. For the structures with zigzag edges, it is shown that the effect of switching off/on takes place for the junctions. The junctions formed by the graphene armchair edges do not exhibit any pronounced switching phenomena and the growth of the bias voltage results in higher values of the conductivity.     

The effect of coulomb correlations on the nonequilibrium charge redistribution tuned by the tunneling current

We demonstrate that the tunneling current flowing through a system with Coulomb correlations leads to a charge redistribution between the different localized states. A simple model consisting of two electron levels is analyzed by means of the Heisenberg equations of motion taking correlations of electron filling numbers in localized states into account exactly in all orders. We consider various relations between the Coulomb interaction and localized electron energies. Sudden jumps of the electron density at each level in a certain range of the applied bias are found. We find that for some parameter range, inverse occupation in the two-level system appears due to Coulomb correlations. It is also shown that Coulomb correlations lead to the appearance of negative tunneling conductivity at a certain relation between the values of tunneling rates from the two electron levels.     

Current-oscillator correlation and Fano factor spectrum of quantum shuttle with finite bias voltage and temperature

A general master equation is derived to describe an electromechanical single-dot transistor in the Coulomb blockade regime. In the equation, Fermi distribution functions in the two leads are taken into account, which allows one to study the system as a function of bias voltage and temperature of the leads. Furthermore, we treat the coherent interaction mechanism between electron tunneling events and the dynamics of excited vibrational modes. Stationary solutions of the equation are numerically calculated. We show that current through the oscillating island at low temperature appears to have step-like characteristics as a function of the bias voltage and the steps depend on the mean phonon number of the oscillator. At higher temperatures the current steps would disappear and this event is accompanied by the emergence of thermal noise of the charge transfer. When the system is mainly in the ground state, the zero frequency Fano factor of current manifests sub-Poissonian noise and when the system is partially driven into its excited states it exhibits super-Poissonian noise. The difference in the current noise would almost be removed for the situation in which the dissipation rate of the oscillator is much larger than the bare tunneling rates of electrons.     

Spatial imaging of two-dimensional electronic states in semiconductor quantum wells

We measure the spatial distribution of the local density of states (LDOS) at cleaved surfaces of InAs/GaSb isolated quantum wells and double quantum wells (DQWs) by low-temperature scanning tunneling spectroscopy. Distinct standing wave patterns of LDOS corresponding to subbands are observed. These LDOS patterns and subband energies agree remarkably well with simple calculations with tip-induced band bending. Furthermore, for the DQWs, coupling of electronic states between the quantum wells is also clearly observed.     

扫描隧道显微术中的微分谱学及其应用

文章介绍了扫描隧道显微术中微分谱学的原理及其在实验中的诸多应用。微分谱（dI／dV谱）和dI／dV成像可用来研究电子局域态密度在能量和空间的分布，即微分谱固定空间一点，反映电子态密度以能量为变量的分布；而dI／dV图像则反映某给定能量的电子局域态密度以空间为变量的分布，二次微分谱（d^2I／dV^2谱）和二次微分成像可以用来反映分子的非弹性隧穿过程，从而研究分子的振动态。     

Light-modulated electron retroreflection and Klein tunneling in a graphene-based n-p-n junction

We investigate the electron retroreflection and the Klein tunneling across a graphene-based n-p-n junction irradiated by linearly polarized off-resonant light with the polarization along the x direction. The linearly polarized off-resonant light modifies the band structure of graphene, which leads to the anisotropy of band structure. By adjusting the linearly polarized light and the direction of n-p-n junction simultaneously, the electron retroreflection appears and the anomalous Klein tunneling, the perfect transmission at a nonzero incident angle regardless of the width and height of potential barrier, happens, which arises from the fact that the light-induced anisotropic band structure changes the relation of wavevector and velocity of electron. Our finding provides an alternative and flexible method to modulate electron retroreflection and Klein tunneling.     

Local density of states and interface effects in semimetallic ErAs nanoparticles embedded in GaAs

The atomic and electronic structures of ErAs nanoparticles embedded within a GaAs matrix are examined via cross-sectional scanning tunneling microscopy and spectroscopy (XSTM/XSTS). The local density of states (LDOS) exhibits a finite minimum at the Fermi level demonstrating that the nanoparticles remain semimetallic despite the predictions of previous models of quantum confinement in ErAs. We also use XSTS to measure changes in the LDOS across the ErAs/GaAs interface and propose that the interface atomic structure results in electronic states that prevent the opening of a band gap.     

Transport through a quantum dot subject to spin and charge bias

Spin and charge transport through a quantum dot coupled to external nonmagnetic leads is analyzed theoretically in terms of the non-equilibrium Green function formalism based on the equation of motion method. The dot is assumed to be subject to spin and charge bias, and the considerations are focused on the Kondo effect in spin and charge transport. It is shown that the differential spin conductance as a function of spin bias reveals a typical zero-bias Kondo anomaly which becomes split when either magnetic field or charge bias are applied. Significantly different behavior is found for mixed charge/spin conductance. The influence of electron-phonon coupling in the dot on tunneling current as well as on both spin and charge conductance is also analyzed.     

Modeling of nonlinear and non-stationary multi-vortex behavior of CDWs at nanoscales in restricted geometries of internal junctions

We report on studies of stationary states and their transient dynamic for an incommensurate charge density wave (ICDW) in a restricted geometry of two spatial dimensions. The model takes into account multiple fields in mutual nonlinear interactions: the amplitude and the phase of the complex order parameter, and distributions of the electric and chemical potentials, of the density and the current of normal carriers. We observed spontaneous formation of vortices (the ICDW dislocations), and followed events of their creation and the subsequent evolution. The vortices appear when the voltage across, or the current through, the sample exceed a threshold. The number of vortices remnant in the reconstructed stationary state increases stepwise – in agreement with experiments, while a much greater number of vortices appears during the intermediate transient states. The vortex core concentrates the electric dipole leading to sharp drops of the electric and chemical potentials across the core. That can lead to enhanced inter-layer tunneling making the core to be a self-tuned microscopic tunneling junction. The results are applied to experiments on nano-fabricated mesa-junctions. They also appeal to modern efforts of the field-effect transformations in correlated electronic systems.     

Nonlocal Andreev reflection with Rashba spin-orbital interaction in a triple-quantum-dot ring

We theoretically studied the nonlocal Andreev reflection with Rashba spin-orbital interaction in a triple-quantumdot(QD) ring,which is introduced as Rashba spin-orbital interaction to act locally on one component quantum dot.It is found that the electronic current and spin current are sensitive to the systematic parameters.The interdot spin-flip term does not play a leading role in causing electronic and spin currents.Otherwise the spin precessing term leads to shift of the peaks of the the spin-up and spin-down electronic currents in different directions and results in the spin current.Moreover,the spin-orbital interaction suppresses the nonlocal Andreev reflection,so we cannot obtain the pure spin current.     

Polarized spin transport in mesoscopic quantum rings with electron--phonon and Rashba spin--orbit coupling

The influence of electron--phonon (EP) scattering on spin polarization of current output from a mesoscopic ring with Rashba spin--orbit (SO) interaction is numerically investigated. There are three leads connecting to the ring at different positions; unpolarized current is injected to one of them, and the other two are output channels with different bias voltages. The spin polarization of current in the outgoing leads shows oscillations as a function of EP coupling strength owing to the quantum interference of EP states in the ring region. As temperature increases, the oscillations are evidently suppressed, implying decoherence of the EP states. The simulation shows that the magnitude of polarized current is sensitive to the location of the lead. The polarized current depends on the connecting position of the lead in a complicated way due to the spin-sensitive quantum interference effects caused by different phases accumulated by transmitting electrons with opposite spin states along different paths.     

Imaging of Friedel oscillation patterns of two-dimensionally accumulated electrons at epitaxially grown InAs(111) A surfaces

The local density of states (LDOS) at the epitaxially grown InAs surface on a GaAs(111) A substrate were characterized using low-temperature scanning tunneling microscopy. Using dI/dV signal mapping, LDOS standing waves were clearly imaged at point defects and within nanostructures. Measurement of the wavelength as a function of bias voltage showed a nonparabolic dispersion relation for the conduction band. The observed wave features originate from the Friedel oscillations of the two-dimensional electron gas in the semiconductor surface accumulation layer.     

Interpretation of orientational contrast in STM images of GaAs(1 1 0) cleavage surface

The electronic structure of GaAs(1 1 0) surface is analyzed using Density Functional Theory (DFT-GGA) in atomic orbital basis (LCAO). The surface orbitals and the corresponding local density of electronic states (LDOS) are calculated for purposes of interpreting STM images. We show how local atomic orbitals of surface atoms are related to tunneling channels for electrons in STM imaging. A destructive interference between orbitals of two neighbouring atoms increases the contrast between the two atoms, and this is reflected in directionality of STM patterns of GaAs(1 1 0) surfaces. We also discuss how the basic formalism of Tersoff-Hamann approach to STM simulation can be reformulated to reveal the role of phase difference between tunneling channels.     

The critical role of the barrier thickness in spin filter tunneling

Spin filter tunneling is considered in the low bias limit as functions of the temperature dependent barrier parameters. We demonstrate the generation of spin polarized tunneling currents in relation to the magnetic order parameter, and discuss how an interfacially suppressed order parameter leads to a temperature dependent tunneling current asymmetry. Analyzing the full parameter space reveals that the often overlooked barrier thickness plays a critical role in spin filter tunneling. With all else fixed, thicker barriers yield higher spin polarization, and allow a given polarization to be achieved at higher temperatures. This insight may open the door for new materials to serve as spin filter barriers.     

联苯二胺分子器件电输运特性的取代效应

在第一性原理基础上,理论研究了苯环上含有不同取代物的四个联苯分子的电输运特性.计算结果表明,当苯环上的氢被取代时,联苯分子的两个苯环之间的扭转角增大.分子结的电导随苯环间扭转角的增加而减少,且电导值与扭转角余弦平方成线性关系.在低偏压下,分子结的电输运机制是电子通过π轨道的隧穿过程.计算结果与实验结果符合的较好.