恒定电场下双磁垒结构中的电子输运行为

对磁量子结构中电子在外加恒定电场下的输运性质进行了研究.分别计算了电子隧穿相同磁垒磁阱和不同磁垒磁阱构成的两种磁量子结构的传输概率和电流密度.计算结果表明,在相当宽广的非共振电子入射能区,外加电场下电子的传输概率比无电场时增加.对于电子隧穿相同磁垒磁阱构成的双磁垒结构,共振减弱;对于电子隧穿不同磁垒磁阱构成的双磁垒结构,无电场作用时的非完全共振在适当的偏置电压下转化为完全共振,这时的电子可实现理想的共振隧穿.研究同时表明,磁量子结构中存在着显著的量子尺寸效应和负微分电导.     

局域热源对磁岛热输运的影响

研究托卡马克等离子体磁岛内的热输运行为.应用局域高斯热源对磁岛加热来模拟电子回旋共振加热.对同时存在背景热源与局域高斯热源的情况,观察局域高斯热源对径向电子温度分布及热输运产生的变化,分析局域高斯热源对温度扰动及磁岛约束能量的影响.     

磁场对四端量子波导中电子输运性质的影响

采用模匹配方法，研究了非均匀磁场下开放的四端量子波导中的电子输运性质. 结果表明，从一端入射的电子可以透射到两个与之垂直的输出端和一个与之平行的输出端. 在没有外加磁场的情况下，两个垂直输出端的输运概率是相同的，但垂直端与水平端的输运概率不同；在外加磁场下，由于磁边缘态效应，两个垂直输出端的输运概率也有着相当大的差别. 通过施加不同的磁场，我们能获得丰富的电子输运结构，如台阶，宽谷，尖峰等；通过调节磁场的大小和比例以及结构参数可控制该量子结构在各输出端的输运概率. 关键词： 电子输运 介观体系 磁效应     

量子点环嵌入Aharonov-Bohm干涉器中电子的退耦合态及反共振现象

采用Anderson模型哈密顿量和非平衡态格林函数方法对量子点环以不同构型嵌入A-B干涉器中电子输运的退耦合态及反共振现象进行了理论研究. 结果表明,量子点环A-B干涉器的结构对称性以及穿过A-B干涉器的磁通量是诱发退耦合现象的两种物理机理. 耦合量子点结构的对称性越高,体系在相干电子输运过程中表现出来的退耦合及反共振现象越明显. 而且在具有高度对称性的耦合量子点结构中,通过磁场调节体系的结构参数可以分别使第奇数或第偶数分子本征态从电极上退耦合,从而使电子输运电导表现出奇偶对等振荡现象. 这为设计纳米电子开关器件提供了一个新的物理模型. 关键词： 量子点环 A-B干涉器 退耦合 反共振     

磁量子结构中二维自旋电子的隧穿输运

研究了零偏压和偏置电压作用下磁量子结构中自旋电子的隧穿输运性质. 结果表明电子自旋 输运的性质不仅取决于磁量子结构的构型、入射电子的能量和波矢, 而且取决于偏置电压. 在零偏压下, 由等同的磁垒磁阱构成的磁量子结构不具有自旋过滤的特点, 而由不等同的磁 垒磁阱构成的磁量子结构却具有较好的自旋过滤特点. 偏置电压极大地改变了磁量子结构中 电子的极化程度, 使得电子隧穿等同的磁垒磁阱构成的磁量子结构的输运性质也显著地依赖 于电子的自旋指向. 关键词： 磁量子结构 自旋电子 隧穿输运 自旋极化     

边缘重构对锯齿型石墨烯纳米带电子输运的影响

实验研究表明石墨烯纳米带中广泛地存在边缘结构重构且稳定的边缘缺陷结构.本文采用第一性原理的计算方法研究了锯齿型石墨烯纳米带中边缘结构重构形成的两种不同缺陷结构对材料电子输运性能的影响.研究发现两种缺陷边缘结构对稳定纳米尺度位型结构和电子能带结构具有显著影响,它使得费米能级发生移动并引起了共振背散射.两种边缘缺陷重构均抑制了费米能级附近电子输运特性并导致不同区域的电子完全共振背散射,电导的抑制不仅与边缘缺陷结构的大小有关,它更取决于边缘缺陷重构位型引起的缺陷态的具体分布和电子能带的移动.     

缺陷对准周期磁超晶格输运性质的影响

研究了缺陷结构的Fibonacci磁超晶格的输运性质.结果表明,缺陷结构对纳米准周期链的电子输运性质有重要影响,特别是低能区电子输运 关键词： 缺陷 Fibonacci链 磁纳米结构 输运性质     

低维介观系统中磁边缘态输运特性

低维介观系统中,当存在垂直方向磁场时,磁边缘态的形成、存在和其固有的特性对系统的量子相干输运过程起着至关重要的作用。本文通过求解相关的单电子的薛定谔方程,来演示准一维量子线中磁边缘态的形成,讨论磁边缘态波函数的一般性质和规范变换及坐标旋转变换下边缘态的变换形式。简单介绍耦合平行双量子线的磁致输运特性,此时色散关系中出现能级交叉、劈裂、和振荡结构,并导致方波型振荡的磁电导谱。最后,简单介绍一维和有限宽度的介观环中持续电流和色散关系。     

自旋轨道耦合Su-Schrieffer-Heeger原子链系统的电子输运特性

在Su-Schrieffer-Heeger (SSH)原子链中,电子在胞内和胞间的跳跃依赖于其自旋时,即SSH原子链存在自旋轨道耦合作用时,存在不同缠绕数的非平庸拓扑边缘态.如何探测自旋轨道耦合SSH原子链不同缠绕数的边缘态是一个重要问题.本文在紧束缚近似下研究了自旋轨道耦合SSH原子链的非平庸拓扑边缘态性质及其零能附近的电子输运特性.研究发现四重和二重简并边缘态的缠绕数分别为2和1;并且仅当源极入射电子的自旋被极化(铁磁电极)时,自旋轨道耦合SSH原子链在零能附近的电子输运特性才能反映其边缘态的能谱特性.尤其是,随着自旋轨道耦合SSH原子链与左、右导线之间的耦合强度由弱到强改变,对于缠绕数为2的四重简并边缘态,入射电子在零能附近的透射峰数目将从4个变为0;而对于缠绕数为1的二重简并边缘态情形,其透射峰数目将从2个变为0.因此,在源极为铁磁电极的情形下,通过观察自旋轨道耦合SSH原子链在零能附近电子共振透射峰的数目随着其与左、右导线之间耦合强度的变化,来探测其不同缠绕数的边缘态.上述结果为基于电子输运特性探测自旋轨道耦合SSH原子链不同拓扑性质的边缘态提供了一种可选择的理论方案.     

低维介观系统中磁边缘态输运特性

低维介观系统中，当存在垂直方向磁场时，磁边缘态的形成、存在和其固有的特性对系统的量子相干输运过程起着至关重要的作用。本文通过求解相关的单电子的薛定谔方程，来演示准一维量子线中磁边缘态的形成，讨论磁边缘态波函数的一般性质和规范变换及坐标旋转变换下边缘态的变换形式。简单介绍耦合平行双量子线的磁致输运特性，此时色散关系中出现能级交叉、劈裂、和振荡结构，并导致方波型振荡的磁电导谱。最后，简单介绍一维和有限宽度的介观环中持续电流和色散关系。     

Resonant states in heterostructures of graphene nanoribbons

We study the transport properties of heterostructures of armchair graphene nanoribbons (AGNR) forming a double symmetrical barrier configuration. The systems are described by a single-band tight-binding Hamiltonian and Green's functions formalism, based on real-space renormalization techniques. We present results for the quantum conductance and the current for distinct configurations, focusing our analysis on the dependence of the transport with geometrical effects such as separation, width and transverse dimension of the barriers. Our results show the apparition of a series of resonant peaks in the conductance, showing a clear evidence of the presence of resonant states in the conductor. Changes in the barrier dimensions allow the modulation of the resonances in the conductance, making possible to obtain a complete suppression of electron transmission for determined values of the Fermi energy. The current–voltage curves show the presence of a negative differential resistance effect with a threshold voltage that can be controlled by varying the separation between the barriers and by modulating its confinement potential.     

Magnetic flux and strain effects on electron transport in a linear array of nanoscopic rings

Electron transport through a linear array of nanoscopic rings with six quantum dot sites per ring is investigated in the presence of an external magnetic flux producing an Aharonov-Bohm phase shift effect. A tight-binding model is employed to analytically calculate the transmission as a function of electron energy, external flux, and inter-site coupling parameters. Current vs. voltage relationships of the ring system are computed using a standard scattering theory of transport and shown to modulate between semiconductor and ohmic characteristics. System parameters are adjusted in order to study the effects of a longitudinal strain on the transmission properties of the linear multiple-ring array. Longitudinal strain is modeled with a Slater-Koster type theory and is demonstrated to affect the transmission properties primarily by narrowing the transmission bands and opening up additional bandgaps in the band structure. In addition, a universal resonant transmission condition as a function of flux is extended to show that the application of strain causes the resonant transmission peaks to converge towards one-half of a flux quantum.     

Flux-dependent anti-crossing of resonances in parallel non-coupled double quantum dots

We present novel resonant phenomena through parallel non-coupled double quantum dots (QDs) embedded in each arm of an Aharonov-Bohm (AB) ring with magnetic flux passing through its center. The electron transmission through this AB ring with each QD formed by two short-range potential barriers is calculated using a scattering matrix at each junction and a transfer matrix in each arm. We show that as the magnetic flux modulates, a distortion of the grid-like square transmission occurs and an anti-crossing of the resonances appears. Hence, the modulation of magnetic flux in this system can have an equivalent effect to the control of inter-dot coupling between the two QDs.     

磁场下含结构缺陷多组分超晶格中的局域电子态和电子输运

在有效质量近似理论下，利用转移矩阵和有效垒高方法研究了有限磁场下含结构缺陷的多组分超晶格中局域电子态的性质.在考虑各组分层有效质量的失配时，外加磁场会导致磁耦合效应的出现.磁耦合效应不仅引起局域电子能级的量子化，并且随着朗道指数或磁场强弱的变化，局域能级及其局域程度都会发生显著移动，特别是对高能区域的局域电子态影响更大.此外，还计算了电子输运系数，讨论了含结构缺陷的三组分超晶格中局域电子能级与输运谱透射禁区中的共振透射峰的关系，发现两者之间有着很好的对应关系，为相应的实验研究提供了依据. 关键词： 超晶格 局域电子态 磁场     

Electron transport across a quantum wire embedding a saw-tooth superlattice

By developing the recursive Green function method, the transport properties through a quantum wire embedding a finite-length saw-tooth superlattice are studied in the presence of magnetic field. The effects of magnetic modulation and the geometric structures of the superlattice on transmission coefficient are discussed. It is shown that resonant peak splitting of this kind of structure is different from that of ‘magnetic' and ‘electric' superlattices in two-dimensional electron gas. The transmission spectrum can be tailored to match requirements through adjusting the size of saw-tooth quantum dot and field strength.     

Transport Properties of Two-Dimensional Electron Gases in Antiparallel Magnetic-Electric Barrier Structures

We study theoretically transport properties of two-dimensional electron gases through antiparallel magnetic-electric barrier structures. Two kinds of magnetic barrier configurations are employed: one is that the strength of the double δ-function in opposite directions is equal and the other is that the strength is unequal. Similarities and differences of electronic transports are presented. It is found that the transmission and the conductance depend strongly on the shape of the magnetic barrier and the height of the electric barrier. The results indicate that this system does not possess any spin filtering and spin polarization and electron gases can realize perfect resonant tunneling and wave-vector filtering properties. Moreover, the strength of the effect of the inhomogeneous magnetic field on the transport properties is discussed.     

Lifetime of resonant state in a spherical quantum dot

This paper calculates the lifetime of resonant state and transmission probability of a single electron tunnelling in a spherical quantum dot (SQD) structure by using the transfer matrix technique. In the SQD, the electron is confined both transversally and longitudinally, the motion in the transverse and longitudinal directions is separated by using the adiabatic approximation theory. Meanwhile, the energy levels of the former are considered as the effective confining potential. The numerical calculations are carried out for the SQD consisting of GaAs/InAs material. The obtained results show that the bigger radius of the quantum dot not only leads significantly to the shifts of resonant peaks toward the low-energy region, but also causes the lengthening of the lifetime of resonant state. The lifetime of resonant state can be calculated from the uncertainty principle between the energy half width and lifetime.     

Effects of structural disorders on sequential tunneling in multiple quantum wells

Based on an isotropic random distribution model, the effects of structural disorders embedded in the barriers on the sequential electron tunneling in multiple quantum wells were studied at low temperatures. By using a sequential tunneling model [Stievenard et al., Appl. Phys. Lett. 61 (1992) 1582], the transmission coefficient through a single barrier was calculated using a finite-difference method and averaged over random configurations of disorders. To compute the tunneling current, a self-consistent calculation for the electronic states was performed, including the Hartree and exchange interactions and non-parabolic energy dispersion. Both disorder-assisted and disorder-impeded electron tunneling phenomena were found as a function of the activation energy. The effects of electric field, barrier width, and temperature were also studied. The predicted resonant disorder-assisted electron tunneling should be large enough to be observable at low temperatures in an experiment.     

均匀横向磁场条件下抛物量子阱结构中的共振隧穿

采用简单的数值计算方法研究了均匀横向磁场条件下通过抛物量子阱结构的共振隧穿。计算了几种GaAs-AlxGa1-xAs-GaAs抛物阱结构的透射系数。结果表明：磁场增加时，共振峰向高能区移动，新的共振峰出现；同时讨论了回旋中心在不同位置时，抛物阱结构的J-V 特性。我们发现回旋中心在抛物阱中心时更有助于解释实验，并且能够得到和实验一致的结果：磁场增加，电流峰值减少且向高偏压移动。