Spray pyrolised Al/ZnO: Al heterojunction: Effect of Al on junction properties

Al/ZnO: Al heterojunction was fabricated by depositing ZnO: Al film on Al substrate by spray pyrolysis technique at 220 °C substrate temperature. XRD, SEM and EDAX techniques were used to study the properties of thin films. Heterojunction properties were studied by I–V and C–V measurements. The fabricated Al/ZnO: Al junctions were rectifying in character. The room temperature ideality factors of Al/ZnO: Al junctions are found to vary from 2.56 to 5.45. The reverse saturation currents are 5.21 × 10⁻⁹, 1.35 × 10⁻⁶, 1.99 × 10⁻⁶, 9.99 × 10⁻⁷ and 1.02 × 10⁻⁷ A for Al/ZnO: Al junctions. Junction forward current depends on doping concentrations and temperature, whereas reverse saturation current remains independent for Al concentration. The built-in-potential calculated from capacitance for Al/ZnO: Al junctions are 2.74, 2.60, 2.0, 2.50 and 2.43 V corresponding to 1, 2, 3, 4 and 5 mol% of Al. X-ray diffraction study confirmed that the films are polycrystalline, orientated in (0 0 2) plane. Scanning electron microscopy study confirmed circular ring patterns with inside ribbon type structure for Al doped ZnO films.     

Properties of superconducting Nb/Al/Nb/Al?AlOx?Al?AlOx?Al/Nb/Al/Nb tunnel junctions

Modified geometry (MG) devices, Nb/Al/Nb/Al−AlO_x−Al−AlO_x−Al/Nb/Al/Nb, have been fabricated and investigated in comparison with the basic geometry (BG) double-barrier Nb/Al−AlO_x−Al−AlO_x−Al/Nb devices. The enhancement of the critical temperature in the Al film is found to be weaker for the MG devices as compared with the BG devices at temperatures nearT=4.2 K but stronger at lowT. Indication of an enhancement of dc Josephson critical current density,j _c , at bias voltageV≠0 as compared withj _c (V=0) has been observed in the MG devices for the first time.     

Electrical behaviour of lateral Al/n-GaN/Al structures

The electrical behaviour of lateral Al/n-GaN/Al structures has been studied by current-voltage measurements between a large pad with an area of 22 mm² and small contacts with different areas in the range of 0.01-1 mm². The results indicated that near room temperature the current was limited by the GaN layer exhibiting linear I-V characteristics for large contacts around 1 mm², while it was contact limited for small contacts around 0.1 mm² and below. This indicates that the same metal contact can behave as ohmic or rectifying depending on the contact area and so on the ratio of contact resistance to the series resistance of the structure.Near liquid nitrogen temperature, the current through the lateral Al/n-GaN/Al structures was limited by space charges. The Al/n-GaN contacts exhibited a very low Schottky barrier height below or around 0.2 eV. A new possible mechanism responsible for the temperature dependence of the ideality factor is proposed.     

Al/AlO_x/Al隧道结简化制备技术

研究了一种在高阻硅衬底上Al/Al Ox/Al超导隧道结简化制备技术。通过一次光刻镀膜完成隧道结结区的确定和上引线的制备,工艺流程简单重复。在0.3K温度下测量了隧道结样品的I-V特性,能隙电压Vg为0.37m V,超导临界电流密度约为12A/cm2。     

A novel strategy for synthesis of Al powder comprising of Al nanoflakes via ultrasonication of Al foil

Aluminum (Al) nanopowders have potential applications as hydrogen storage medium, energetic materials, pigments, and for production of metal matrix parts via powder metallurgy, to name a few. They are synthesized by methods which are either expensive or result in the product with impurities. A novel methodology based on ultrasonication of commercially available Al foil has been developed for synthesis of Al powders. Al foil was immersed in an organic medium and subjected to ultrasonication in a 160-watt bath ultrasonicator operated at 35 kHz frequency. Morphological, crystal structural, and dimensional characterization of ultrasonicated Al was carried out with the help of scanning electron microscopy (SEM), X-ray diffraction (XRD), and atomic forces microscopy (AFM) respectively. Characterization results revealed that Al foil was eroded laterally as well as axially, resulting in the formation of micro and nanosized flake-like pure Al powder.     

The Al problem

A precision measurement of the ²⁶Al^m---²⁶Mg mass difference brings the anomalously low ft value for the super-allowed pure Fermi transition ²⁶Al^m(β⁺)²⁶Mg closer to the average of the ft values of six similar β⁺ transitions. The anomaly, however, is still significant.     

Al/AlO_x/Al超导隧道结的制备工艺研究

研究了在高阻硅衬底上Al/AlO x/Al隧道结的制备技术,采用电子束蒸发制备Al/AlO x/Al三层材料,湿法刻蚀制备底电极和上电极以及电路连线,PECVD法生长绝缘层(SiO2)保护超导隧道结,RIE刻蚀上电极窗口。在400mK温度下测量了Al/AlO x/Al隧道结样品,得到了较好的隧道结I-V曲线,能隙电压Vg为0.325mV,超导临界电流I c为55nA,漏电流为5nA。     

Electric quadrupole moments of neutron-rich nuclei 32Al and 31Al

The electric quadrupole moments for the ground states of ³²Al and ³¹Al have been measured by the β ray-detected nuclear quadrupole resonance method. Spin-polarized ³²Al and ³¹Al nuclei were obtained from the fragmentation of ⁴⁰Ar projectiles at E/A?=?95 MeV/nucleon, and were implanted in a single crystal α-Al₂O₃ stopper. The measured Q moment of ³²Al, |Q(³²Al)|?=?24(2) mb, is in good agreement with a conventional shell-model calculation with a full sd model space and empirical effective charges, while that of ³¹Al is considerably smaller than the sd calculations.     

Nanoporous Al sandwich foils using size effect of Al layer thickness during Cu/Al/Cu laminate rolling

The roll bonding technique is one of the most widely used methods to produce metal laminate sheets. Such sheets offer interesting research opportunities for both scientists and engineers. In this paper, we report on an experimental investigation of the ‘thickness effect’ during laminate rolling for the first time. Using a four-high multifunction rolling mill, Cu/Al/Cu laminate sheets were fabricated with a range of thicknesses (16, 40, 70 and 130 μm) of the Al layer. The thickness of the Cu sheets was a constant 300 μm. After rolling, TEM images show good bonding quality between the Cu and Al layers. However, there are many nanoscale pores in the Al layer. The fraction of nanoscale pores in the Al layer increases with a reduction in the Al layer thickness. The finite element method was used to simulate the Cu/Al/Cu rolling process. The simulation results reveal the effect of the Al layer thickness on the deformation characteristics of the Cu/Al/Cu laminate. Finally, we propose that the size effect of the Al layer thickness during Cu/Al/Cu laminate rolling may offer a method to fabricate ‘nanoporous’ Al sandwich laminate foils. Such foils can be used in electromagnetic shielding of electrical devices and noisy shielding of building.     

Cross sections for the photoproduction of Al and Al from phosphorus

Bremsstrahlung activation curves were measured for the reactions ³¹P(γ, 2p)²⁹Al and ³¹P(γ, 2pn)²⁸Al in 0.5 MeV steps from 23.0 to 62.0 MeV. The cross sections obtained from these curves show peaks at 32.6 ± 0.7 MeV, 41.2 ± 0.8 MeV and 51.0 ± 1.5 MeV for both reactions. The cross section integrated to 62 MeV for the (γ, 2p) reaction is 5.6 ± 0.6 MeV · mb and for the (γ, 2pn) reaction is 7.6 ± 0.8 MeV · mb.     

Bridge-free fabrication process for Al/AlO_x/Al Josephson junctions

We fabricate different-sized Al/AlO_x/Al Josephson junctions by using a simple bridge-free technique, in which only single-layer E-beam resist polymethyl methacrylate(PMMA) is exposed at low accelerate voltage(below 30 kV) and the size of junction can be varied in a large range. Compared with the bridge technique, this fabrication process is very robust because it can avoid collapsing the bridge during fabrication. This makes the bridge-free technique more popular to meet different requirements for Josephson junction devices especially for superconducting quantum bits.     

Microcantilever bend testing and finite element simulations of HIP-ed interface-free bulk Al and Al–Al HIP bonded interfaces

Abstract

We report on the strength of Al–Al interfaces and the effects of chemical segregation and interfacial void formation on bond strength using microcantilever bend testing. Interfaces are synthesised via hot isostatic pressing. Microcantilevers of several nominal dimensions were fabricated via focused ion beam and deformed in a nanoindenter. We find increased cantilever strength as a function of decreasing sample size, with a linear dependence of the yield strength on the inverse square root of the length scale characteristic to the cantilever cross-section. The presence of pores and chemical segregation decreases the yield strength of the material by 17% and the accommodated strain energy by 10–15% for strain values in the 6–12% range.     

27Al and 65Cu NMR study in UCu5Al.

We have studied the microscopic properties of the tetragonal UCu₅Al Kondo compound by ²⁷Al and ^63,65Cu NMR in the paramagnetic state. NMR and susceptibility measurements performed on the powdered sample, but oriented along the applied field, showed χ>χ. Plots of K(T) against χ(T) at temperatures T≥100 K yield the transferred hyperfine fields of +5.9 kOe/μ_B for ²⁷Al nuclei, and +5.3 and −7.0 kOe/μ_B for ⁶⁵Cu nuclei in crystallographically inequivalent Cu(2) and Cu(1) sites, respectively. The Knight shift vs. susceptibility plots for T<100 K exhibit a deviation from the linear behaviour (absolute values of shifts become smaller than expected). We attribute this finding to the crystalline electric field effect in similar way as it was reported for several Ce-based compounds. The random distribution of the Al and Cu(2) atoms in the crystal lattice we consider as a reason of an unusual broadening of the NMR spectra, particularly at low temperatures.     

Comparison of one and two-neutron transfer near the coulomb barrier for the27Al(18O,16O)29Al,27Al(180,17O)28Al and27Al(13C,12C)28Al reactions

Total reaction cross sections for the transfer reactions²⁷Al(¹⁸O,¹⁶O)²⁹Al,²⁷Al(¹⁸O,¹⁷O)²⁸Al and²⁷Al(¹³C,¹²C)²⁸Al are reported for center-of-mass energies between 13 and 20 MeV for¹⁸O projectiles and between 11 and 17.5 MeV for¹³C projectiles. The reaction products,²⁹Al and²⁸Al, beta decay to²⁹Si and²⁸Si, respectively, and the subsequentγ decays of²⁹Si and²⁸Si were measured. Due to the relatively long beta decay half lives, data were taken in a beam-off mode, resulting in very clean spectra. Total cross sections were calculated and compared with a theoretical model for barrier penetration proposed by C.Y. Wong. Differences between¹⁸O induced one and two-neutron total transfer reaction cross sections are discussed.     

Electrical resistivities of liquid Al−Mg and Al−Cu alloys

Il Nuovo Cimento D - The electrical resistivity of liquid Al−Mg and Al−Cu alloys is calculated using both the Faber-Ziman and «2k F» scattering theories. The partial structure...     

FMR studies in Al2+ implanted Fe60Al40 alloy

The Al²⁺ implanted layer (∼ 200 nm) in Fe₆₀Al₄₀ has been investigated by FMR. The magnetization is found to be 6400 G in the absence of anisotropy which agrees well with the value reported on cold worked Fe₆₀Al₄₀. Smaller line width for a sample implanted with the highest fluence of 1×10¹⁵ ion/cm² indicates better chemical and magnetic homogeneities. The g-factor is 2.06.     

A CEMS investigation of57Fe+Al implanted in Al foil

⁵⁷Fe implanted and post Al implanted in aluminum foil have been performed at low energy of 27keV and the CEMS shows the formation of intermetallic compounds FeAlσ and Fe₂Alσ during the ion bombardment. The results are discussed with the enhanced diffusion by energetic ion bombardment.