Self-consistent electronic structure for a Mo (001) surface with saturated H adsorption

The band structure for a Mo (001) surface covered with a saturated monolayer of hydrogen is calculated self-consistently using the pseudopotential method in a mixed-basis representation. Two adsorbate bands are found below the bottom of the molybdenum bulk bands. Most of the intrinsic surface states of the clean (001) surface also exist on the hydrogen covered surface at lower energies. The results are used to identify H induced structures observed in recent photoemission studies of hydrogen on W (001).     

Relativistic electronic structure of the Pb (001) surface

The surface electronic band structure of the Pb (001) was calculated using the self-consistent, first-principles linear-augmented-plane-wave method and the norm-conserving pseudopotentiai method. In the nonrelativistic case, forbidden gaps appear above and below the Fermi levelin the bulk projected band structure of lead. An occupied surface state at the point and two surface states in a wide forbidden gap above E_F are found. A characteristic feature of the electronic structure of the Pb (001) surface is the absence of a surface state within the forbidden S-P gap in the vicinity of the point. The inclusion of scalar-relativistic effects leads to the merger of several S-P gaps into one wide gap extending throughout the entire Brillouin zone. At the same time, the occupied state at point extends to point and its energy decreases by 2 eV. New, relatively weak surface states in the direction and unoccupied states in the vicinity of the point appear. An unoccupied surface state is found at the bottom of the forbidden gap at point . Including the contribution of the spinorbit pseudopotentiai leads to the appearance of two-spin orbit gas; however, the surface level structure is practically unchanged (except for the disappearance of the unoccupied surface state of P_z-symmetry at point ).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 47–53, October, 1991.     

Atomic and electronic structure of the Si(001) surface induced by hydrogen-adsorption

The initial stage of hydrogen (H) adsorption on the Si(001) surface is theoretically investigated to clarify the atomic and electronic structure induced by the adsorption. For this purpose, the electronic states are calculated in the density functional approach with the DV(discretized variation)-Xα-LCAO method. We also simulate the scanning tunneling microscopy (STM) image and the scanning tunneling spectroscopy (STS) spectrum in the first-principles approach. Our results of the STM image do not support the asymmetric dimer structure of the substrate with a H atom bonded to the upper Si atom. They conclude that the bright ball-like spot in the observed images comes from the free dangling bond induced on the remaining Si atom of the reacted dimer. However, the single particle picture cannot reproduce the observed features of the STS spectrum at the spot. We discuss that all the features can be well explained by the Coulomb blockade effect due to the electron correlation in the dangling bond state.     

Ab-initio calculation of the electronic structure and energetics of the unreconstructed Au(001) surface

The electronic structure, surface and relaxation energies, and the electric field gradient for the unreconstructed Au(001) surface were calculated by means of the ab-initio all-electron full-potential linearized augmented plane wave slab method. The valence states were calculated within the standard semi-relativistic approach whereas the core states are treated in a fully relativistic way. The Au(001) surface was modelled by free slabs of 5, 7, and 9 layers. From the 9-layer calculation a work function of 5.39 eV was obtained. For the surface energy a value of 1.30 J/m² for the unrelaxed geometry was derived from the total energies of the 7- and the 9-layer slabs. From total energy minimization of the 7-layer slab, a negative, inward relaxation of −2.6% and a relaxation energy of 14.3 × 10⁻³ J/m² were derived. To discuss a mechanism of reconstruction, particular surface states were analyzed in detail in terms of the band structure, layer-dependent density of states and the charge density distribution. Differences of surface and central-layer charge densities show a gain of charge in z-direction localised below and also, to a smaller extent, above the surface atoms. We find a very small gain of delocalised charge in the surface plane between the nearest neighbour positions at the expense of more localised s-d hybridised states. The electric field gradient component Φ_zz was obtained in a two energy window calculation for which the Au5p states were also treated as band states. The resulting Φ_zz values are −16.50 × 10¹⁷ V/cm² surface layer, and −3.3 × 10¹⁷ V/cm² for the subsurface layer.     

In在Al(001)表面偏析的模拟

通过一种空位模型详细的描述了In在Al(001)表面的扩散偏析过程,利用周期性密度泛函理论方法计算了这个偏析过程中每步构型的能量和In原子扩散的能量壁垒,并对可能的偏析机理进行分析.结果表明:In原子从Al(001)表面第二层扩散偏析至表面层时,系统的能量降低了0.64 eV,最大的扩散迁移壁垒为0.34 eV;而从表面更内层向表面第二层扩散时系统能量基本保持不变,扩散需要克服的能量壁垒为0.65 eV,说明In原子在Al(001)表面只能由体内向表面扩散偏析.In在Al(001)的清洁表面具有强烈的偏析趋势,在热力学上是容易进行的. 关键词： 密度泛函理论 表面偏析 扩散 Al合金     

PbTe(001)表面原子几何结构和电子结构的第一性原理计算

用第一性原理的密度泛函理论计算了PbTe（001）表面的几何结构和电子结构.计算结果表明：PbTe（001）表面不发生重构，但表面几层原子表现出明显的振荡弛豫现象，其中第一、第二层间距减小4.5%，第二、第三层间距增加2.0%，并且表面层原子出现褶皱.表面带隙在X 点，带隙变宽，在基本带隙中不引入新的表面态，而导带底和价带顶附近等多处出现新的表 面共振态；弛豫后费米面处态密度很低，所以表面结构很稳定. 关键词： 密度泛函理论 表面几何结构 表面电子结构 PbTe     

Atomic and electronic structures of GaAs (001) surface

The atomic and electronic structures of α, β, β₂, and ζ reconstructions for the Ga-terminated GaAs (001)-(4×2) surface are investigated in the framework of the pseudopotential approach. Total, surface, and local densities of electron states, electron-energy spectra, and relative surface energies of the structures under consideration are calculated. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 44–52, October, 2006.     

Valence surface electronic states on Ge(001)

The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by their electronic states close to the Fermi level (E{F}). We use scanning tunneling microscopy and density functional theory to clarify the fundamental nature of the ground state Ge(001) electronic structure near E{F}, and resolve previously contradictory photoemission and tunneling spectroscopy data. The highest energy occupied surface states were found to be exclusively back bond states, in contrast to the Si(001) surface, where dangling bond states also lie at the top of the valence band.     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO2)体相及其(001)表面的原子几何与电子结构.理论计算结果表明,t-HfO2(001)表面不会产生重构现象.与体相电子结构相比, t-HfO2(001)表面态密度明显高于体相态密度.其次,表面原子的态密度更靠近费米能级(EF),价带往低能量处移动,并有表面态产生.计算结果表明了t-HfO2表面禁带宽度明显低于体相的禁带宽度. t-HfO2(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位数减少,表面原子周围的环境发生变化而引起的.