High-resolution spectroscopy of HoFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> crystal: a study of phase transitions

The transmission spectra of HoFe₃(BO₃) multiferroic single crystals are studied by optical Fourier-transform spectroscopy at temperatures of 1.7–423 K in polarized light in the spectral range 500–10 000 cm^–1 with a resolution up to 0.1 cm^–1. A new first-order structural phase transition close to the second-order transition is recorded at T_c = 360 K by the appearance of a new phonon mode at 976 cm^–1. The reasons for considerable differences in T_c for different samples of holmium ferroborate are discussed. By temperature variations in the spectra of the f–f transitions in the Ho³⁺ ion, we studied two magnetic phase transitions, namely, magnetic ordering into an easy-plane structure as a second-order phase transition at T_N = 39 K and spin reorientation from the ab plane to the c axis as a first-order phase transition at T_SR = 4.7 ± 0.2 K. It is shown that erbium impurity in a concentration of 1 at % decreases the spin-reorientation transition temperature to T_SR = 4.0 K.     

Excitation of even levels of erbium atoms without a change in the number of 4<Emphasis Type="Italic">f</Emphasis> electrons

The excitation of even levels of erbium atoms by slow electrons that occurs without a change in the number of electrons in the 4f shell is experimentally studied. The levels investigated belong to the 4f ¹²6s7s, 4f ¹²5d6s, 4f ¹²6s6d configurations. The cross sections measured at an electron energy of 30 eV lie within the range (0.2–18) × 10^?18 cm².     

Optical properties and mechanisms of current flow in Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> films prepared by spray pyrolysis

Thin films Cu₂ZnSnS₄ (up to 0.9 μm thick) with p-type conductivity and band gap E_g = 1.54 eV have been prepared by the spray pyrolysis of 0.1 M aqueous solutions of the salts CuCl₂ · 2H₂O, ZnCl₂ · 2H₂O, SnCl₄ · 5H₂O, and (NH₂)₂CS at a temperature T_S = 290°C. The electrophysical properties of the films have been analyzed using the model for polycrystalline materials with electrically active grain boundaries. The energy and geometric parameters of the grain boundaries have been determined as follows: the height of the barriers is E_b ≈ 0.045–0.048 eV, and the thickness of the depletion region is δ ≈ 3.25 nm. The effective concentrations of charge carriers p₀ = 3.16 × 10¹⁸ cm^–3 and their mobilities in crystallites μ_p = 85 cm²/(V s) have been found using the technique for determining the kinetic parameters from the absorption spectra of thin films at a photon energy hν ≈ E_g. The density of states at grain boundaries N_t = 9.57 × 10¹¹ cm^–2 has been estimated.     

Adiabatic elastic moduli in ZnSe : Mn<Superscript>2+</Superscript> and ZnSe : V<Superscript>2+</Superscript> crystals

The temperature dependences of the elastic moduli C ₄₄ (C ₁₁ ? C ₁₂)/2 and C _l = (C ₁₁ + C ₁₂ + 2C ₄₄)/2 of ZnSe : V²⁺ (impurity concentration, 6 × 10¹⁸ cm^?3) and ZnSe : Mn²⁺ (9.4 × 10²⁰ cm^?3) are measured in the temperature range 1.4–100.0 K at frequencies of 52 and 156 MHz. The temperature dependences of the adiabatic elastic moduli are derived. It is established that softening of the symmetry modules is observed only in the crystal with an impurity having orbitally degenerate states.     

Effect of high doses on the Si <Emphasis Type="Italic">L</Emphasis><Subscript>2,3</Subscript> x-ray emission spectra of silicon implanted with iron ions under steady-state conditions

The effect of high doses on p-and n-type silicon samples implanted with Fe⁺ ions under steady-state conditions (implantation energy, 100 keV; ion current density, 0.6–0.8 μA/cm²; irradiation dose, 10¹⁴–10¹⁶ ions/cm²) is investigated using Si L _{2, 3} x-ray emission spectroscopy (the 3d3s → 2p electronic transition). An analysis of the Si L x-ray emission spectra of the silicon samples is performed by comparison with the spectra of reference materials and the spectra of silicon samples implanted with Fe⁺ ions in a pulsed mode. The Si L x-ray emission spectra are simulated by the molecular dynamics and full-potential linearized augmented-plane-wave (FLAPW) methods. It is revealed that the effect of high doses under steady-state conditions of Fe⁺ ion implantation into the semiconductor crystal matrix exhibits specific features: the disordering of the structure and partial amorphization of the sample from the surface deep into the bulk are more pronounced than those observed under conditions of pulsed ion implantation, although virtually no recrystallization of the sample at the threshold dose occurs. The most probable origins and mechanisms of the effect of high doses on the samples under investigation are discussed.     

Thermopower in the region of hopping conduction in TlNiS<Subscript>2</Subscript>

Samples of the composition TlNiS₂ in the hexagonal system with the unit cell parameters a=12.28 Å, c=19.32 Å, and ρ=6.90 g/cm³ are synthesized. The results of the investigation into the electrical and thermoelectrical properties of TlNiS₂ samples in the temperature range 80–300 K indicate that TlNiS₂ is a p-type semiconductor. It is found that, at temperatures ranging from 110 to 240 K, TlNiS₂ samples in a dc electric field possess variable-range-hopping conduction at the states localized in the vicinity of the Fermi level. The density of localized states near the Fermi level is determined to be N_F=9×10²⁰ eV^?1 cm^?3, and the scatter of the states is estimated as J≈2×10^?2 eV. In the temperature range 80–110 K, TlNiS₂ exhibits activationless hopping conduction. At low temperatures (80–240 K), the thermopower of TlNiS₂ is adequately described by the relationship α(T)=A+BT, which is characteristic of the hopping mechanism of charge transfer. In the case when the temperature increases to the temperature of the onset of intrinsic conduction with the activation energy ΔE=1.0 eV, there arise majority intrinsic charge carriers of both signs. This leads to an increase in the electrical conductivity σ and, at the same time, to a drastic decrease in the thermopower α; in this case, the thermopower is virtually independent of the temperature.     

Mechanism of charge transfer in <Emphasis Type="Italic">n</Emphasis>-CdS/<Emphasis Type="Italic">p</Emphasis>-CdTe heterojunctions

The capacitance-voltage and current-voltage characteristics of the n-CdS/p-CdTe heterosystem are investigated. Analysis of these characteristics demonstrates that the CdTe_1?x S _x solid solution formed at the n-CdS/p-CdTe heterointerface is inhomogeneous in both the conductivity and composition. The thickness of solid solutions is estimated from the capacitance-voltage characteristics. It is shown that, for the n-CdS/p-CdTe heterosystem, the current-voltage characteristic in the current density range 10^?8-10^?5 A cm^?2 is governed by the thermal electron emission, whereas the current in the heterostructure at current densities in the range 10^?4-10^?2 A cm^?2 is limited by recombination of charge carriers in the electroneutral region of the CdTe_1?x S _x solid solution. The lifetime and the diffusion length of minority charge carriers in the CdTe_1?x S _x solid solution and the surface recombination rate at the interface between the CdS layer and the CdTe_1?x S _x solid solution are determined. It is demonstrated that the n-CdS/p-CdTe heterostructure operates as a p-i-n structure in which CdTe is a p layer, CdTe_1?x S _x is an i layer, and CdS is an n layer.     

Ferromagnetism and ferroelectricity in Eu<Emphasis Type="Italic">X</Emphasis> (<Emphasis Type="Italic">X</Emphasis> = <Emphasis Type="Italic">O</Emphasis>, <Emphasis Type="Italic">S</Emphasis>): pressure effects

Ferromagnetism and ferroelectricity in Eu monochalcogenides have been investigated by ab initio density functional theory in the DFT+U approach. Exchange interaction parameters and Curie temperatures under pressure are studied and discussed using Heisenberg Hamiltonian with first and second-nearest-neighbor interactions. The calculations showed that the hydrostatic pressure perfectly improves the Curie temperature (EuO: T _C = 175 K; EuS: T _C = 33.8 K) and in the other hand it cannot induce the spontaneous polarization (P _s ). The effect of uniaxial and biaxial pressure is also studied. Although the uniaxial strains slightly increases the Curie temperature, it ensures the ferrolectricity in these systems by producing a spontaneous polarization of the order of P _s (EuO) = 57.50 μC/cm² and P _s (EuS) = 42.86 μC/cm² with pressures of 5% and 4%, respectively. The search for new model systems is a necessity to better understand the physics related to multiferroïc materials and to consider possible applications.     

High-pressure induced magnetoresistance in <Emphasis Type="Italic">p</Emphasis>-InAs:Mn and <Emphasis Type="Italic">p</Emphasis>-CdGeAs<Subscript>2</Subscript>:Mn

The baric (P ≤ 5GPa) and magnetic-field (H ≤ 5 kOe) dependences of the transverse magnetore-sistance Δρ _xx /ρ₀ have been measured for p-InAs (R _H = 22.5 cm³/C, ρ = 0.15 Ω cm) and the new ferromag-netic semiconductor p-CdGeAs₂ (R _H = 5 cm³/C, ρ = 0.62 Ω cm), doped with a magnetic impurity (Mn), near the temperature T = 297 K. The dependences Δρ _xx /ρ₀ (P, H) for p-InAs:Mn and p-CdGeAs₂:Mn exhibit a magnetoresistive effect with an increase in pressure, and a pressure-induced magnetoresistance hysteresis is observed in p-CdGeAs₂:Mn with a pressure drop.     

Recombination population of excited states of the hydrogen atom in an He-H<Subscript>2</Subscript> plasma

The population of excited states of the hydrogen atom in an afterglow plasma produced by a pulsed discharge in helium (40 Torr) with a small admixture of hydrogen ([H₂] ≈ 10¹² cm^?3) has been studied spectroscopically. The contribution from electron-ion recombination Γ ₃ ^rec to the production rate of atoms H(n = 3) has been separated. On the basis of an experiment in which the response of the spectral line intensities to the perturbation of the electron temperature in the afterglow phase was observed, the dependence Γ ₃ ^rec (T _e ～ T _e ^?(0.9–1.0) has been obtained in the region kT _e = 0.026–0.064 eV.     

Charge transport in PbMoO<Subscript>4</Subscript> crystals

Dc and ac electrical conductivity of lead molybdate crystals is studied in the temperature range 300–550 K. The electrical conductivity was shown to have electronic (hole) impurity character. The I–V characteristics are typical of a space charge-limited current. The carrier mobility was estimated to be 10^?5 cm² V^?1 sat T=300 K. The results of the study suggest the hopping mechanism of conduction in PbMoO₄ crystals.     

Mechanisms of ionization of <Emphasis Type="Italic">F</Emphasis><Subscript>2</Subscript>-centers in laser media on the basis of LiF crystals

F₂ color centers with a superhigh concentration (5000-cm^–1 absorption coefficient at 450 nm) were formed by high-density electron beams in a layer of LiF crystals of micrometer thickness. The F₂-centers excited by high-power nanosecond wide-band optical pulses (the “soft” pumping regime) efficiently amplified the laser radiation and showed high stability under these conditions. A low stability of F₂-centers to laser radiation (the “hard” excitation regime) is explained by the dissociation of (F ₂ ⁺ , F^–) pairs induced by two-step ionization of F₂-centers: (2hν > 4.5 eV) → F₂ → (F₂)* → F ₂ ⁺ + e; F + e → F^–; F ₂ ⁺ + F^– → 3F.     

Annealing study of electrodeposited CuInSe<Subscript>2</Subscript> and CuInS<Subscript>2</Subscript> thin films

In this study CuInSe₂ and CuInS₂ thin films were prepared onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis. The annealing effects on electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe₂/CuInS₂ showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. Mott–Schottky measurements were used to assess the conductivity type of the films and their carrier concentration. The prepared samples underwent an etching process to remove the binary accumulated Cu_2?x(Se,S) phases shown in FESEM pictures. This etching process has shown a noticeable decrease in both, the flat band potential, V_fb (V), and the number of acceptors, N_A (cm^?3) in selenized CuInSe₂ and sulfurized CuInS₂ samples.     

Tunneling radiative recombination in <Emphasis Type="Italic">p-n</Emphasis> heterostructures based on gallium nitride and other A<Superscript>III</Superscript>B<Superscript>V</Superscript> semiconductor compounds

We present summarized data on the tunneling emission in p-n heterostructures based on GaN and on a series of cubic A^IIIB^V semiconductors, including GaAs, InP, GaSb, and (Ga, In)Sb. The emission in p-n heterostructures of the InGaN/AlGaN/GaN type in a spectral interval from 1.9 to 2.7 eV predominates at small currents (J<0.2 mA). The position of maximum ?ω_max in the spectrum approximately corresponds to the applied potential difference U:?ω_max=eU. The tunneling emission is related to a high electric field strength in GaN-based heterostructures. The radiative recombination probability is higher in the structures with piezoelectric fields. The observed spectra are compared to the spectra of tunneling emission from light-emitting diodes based on GaAs, InP, and GaSb. The experimental results for various semiconductors emitting in a broad energy range (0.5–2.7 eV) are described by the equation ?ω_max=eU=0.5–2.7 eV.     

Electron gas induced in SrTiO<Subscript>3</Subscript>

This mini-review is dedicated to the 85th birthday of Prof. L.V. Keldysh, from whom we have learned so much. In this paper, we study the potential and electron density depth profiles in surface accumulation layers in crystals with a large and nonlinear dielectric response such as SrTiO₃ (STO) in the cases of planar, spherical, and cylindrical geometries. The electron gas can be created by applying an induction D₀ to the STO surface. We describe the lattice dielectric response of STO using the Landau–Ginzburg free energy expansion and employ the Thomas–Fermi (TF) approximation for the electron gas. For the planar geometry, we arrive at the electron density profile n(x) ∝ (x + d)^–12/7, where d ∝ D₀^–12/7. We extend our results to overlapping electron gases in GTO/STO/GTO heterojunctions and electron gases created by spill-out from NSTO (heavily n-type doped STO) layers into STO. Generalization of our approach to a spherical donor cluster creating a big TF atom with electrons in STO brings us to the problem of supercharged nuclei. It is known that for an atom with a nuclear charge Ze where Z > 170, electrons collapse onto the nucleus, resulting in a net charge Zn < Z. Here, instead of relativistic physics, the collapse is caused by the nonlinear dielectric response. Electrons collapse into the charged spherical donor cluster with radius R when its total charge number Z exceeds the critical value Z_c ≈ R/a, where a is the lattice constant. The net charge eZ_n grows with Z until Z exceeds Z* ≈ (R/a)^9/7. After this point, the charge number of the compact core Z_n remains ≈ Z*, with the rest Z* electrons forming a sparse TF atom with it. We extend our studies of collapse to the case of long cylindrical clusters as well.     

Single-electron charge transfer and excitations at collisions between Bi<Superscript>4+</Superscript> ions in the kiloelectronvolt energy range

Pioneering theoretical data for single-electron charge transfer and excitations due to collisions between Bi⁴⁺ ions in the ground (6s) and metastable (6p) states are gained in the collision energy interval 5–75 keV in the center-of-mass frame. The cross sections of the processes are calculated in terms of the close-coupling method in the basis of two-electron quasi-molecular states for the Coulomb trajectory of nuclei. It is found that single-electron capture into the singlet 6s ² states of Bi³⁺ ions makes a major contribution to the charge transfer total cross section for Bi⁴⁺(6s) + Bi⁴⁺(6s) collisions (reaction 1), whereas single-electron capture into the singlet 6s6p states is the basic contributor to the total cross section in Bi⁴⁺(6s) + Bi⁴⁺(6p) collisions (reaction 2). In the collision energy interval mentioned above, the collision cross sections vary between 1.2 × 10^?17 and 1.9 × 10^?17 cm² for reaction 1 and between 3.8 × 10^?17 and 5.3 × 10^?17 cm² for reaction 2. In reaction 1, the 6s → 6p excitation cross sections vary from 0.6 × 10^?16 to 0.8 × 10^?16 cm² for the singlet channel and from 2.2 × 10^?16 to 2.8 × 10^?16 cm² for the triplet channel. The calculation results are compared with the data obtained in experiments with crossed ion beams of kiloelectronvolt energy. The fraction of metastable ions in the beams is estimated by comparing the experimental data with the weighted average theoretical results for the cross sections of reactions 1 and 2. From the data for the charge transfer cross sections, one can estimate particle losses in relativistic beams due to a change in the charge state of the ions colliding with each other in the beam because of betatron oscillations.     

Role of the Cluster Structure of Amorphous Fe<Subscript>67</Subscript>Cr<Subscript>18</Subscript>B<Subscript>15</Subscript> Alloy in Magnetism and in the Changing of Electron Scattering Mechanisms under the Influence of Ion (Ar<Superscript>+</Superscript>) Irradiation

The contribution of clusters of different sizes to magnetism and the switching of electron scattering mechanisms in amorphous Fe₆₇Cr₁₈B₁₅ alloy during ion Ar⁺ irradiation is studied. The cluster magnetism is found to be related to the presence of clusters of the following two types: large α-(Fe, Cr) clusters of size D = 150–250 Å and small (D = 40–80 Å) clusters in a random intercluster medium. The generation of small ferromagnetic and antiferromagnetic clusters during ion irradiation leads to the formation of cluster glass, which affects the electrical properties of the alloy and causes a magnetic frustration. The temperature dependence of the barrier height is shown to characterize the magnetic state of the alloy in low fields. On the whole, the temperature dependence of the order parameter is a universal characteristic of the system. The temperature dependence of resistivity of initial alloys in the temperature range 98–300 K (ρ(T) ∝ T²) is determined by electron scattering by quantum defects, and the transition into a ferromagnetic state is revealed when the derivative ?ρ/?T ∝ T is analyzed. The increase in resistivity and the relation ρ ∝ T^1/2 in strongly inhomogeneous samples after irradiation at a dose Φ = 1.5 × 10¹⁸ ions/cm² are caused by weak localization effects, and the transition to a ferromagnetic state becomes obvious when the derivative ?ρ/?T ∝ T^–1/2 is considered. Irradiation by fluence Φ = 3 × 10¹⁸ ions/cm2 induces a giant (twofold) increase in the alloy density, restores the ferromagnetism of large clusters, decreases the resistivity by 37%, and restores the relation ρ(T) ∝ T², which results from the overlapping of the irradiation-induced small clusters when their concentration increases and from an increase in the alloy density. The overlapping of clusters lowers the barrier height and decreases the sensitivity of the alloy to an applied field. The relation ρ(T) ∝ T² is valid for the entire temperature range T = 2–300 K because of the partial screening of the magnetic moments of large clusters by a medium having the properties of cluster glass.     

Plasma-volume generation of H<Superscript>−</Superscript> ions in a low-voltage xenon-hydrogen discharge. II

A low-voltage xenon-hydrogen discharge is considered theoretically at an interelectrode distance of L = 1 cm and cathode emission current densities of j _s = 2–20 A/cm². Basic parameters of the discharge plasma, in particular, the total hydrogen and xenon densities, are optimized to attain the maximum possible density of negative hydrogen ions \(N_{H^ - } (L)\) at the plasma-anode boundary. The distributions of the plasma parameters over the discharge gap are calculated for optimized regimes. According to calculations, at intermediate cathode emission current densities (j _s ≈ 5–10 A/cm²) in optimized discharge regimes, the density of negative hydrogen ions in the anode region of the plasma is \(N_{H^ - } (L)\) ≈ (1.5–2.5) × 10¹² cm^?3 and the total plasma pressure is p ₀ = 0.5–0.6 Torr.     

Optical Properties of Nonstoichiometric Tantalum Oxide TaO<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> (<Emphasis Type="Italic">x</Emphasis> &lt; 5/2) According to Spectral-Ellipsometry and Raman-Scattering Data

Optical properties of amorphous nonstoichiometric tantalum-oxide films of variable composition (TaO_x, x = 1.94–2.51) in the spectral range of 1.12–4.96 eV, obtained by ion-beam sputtering-deposition of metallic tantalum at different partial oxygen pressures (0.53–9.09 × 10^–3 Pa), have been investigated. It is shown by spectral ellipsometry that the character of dispersion of the absorption coefficient and refractive index in TaO_x of variable composition suggests that light-absorbing films with dispersion similar to that in metals are formed at oxygen pressures in the growth chamber below 2.21 × 10^–3 Pa, whereas transparent films with dielectric dispersion are formed at pressures above 2.81 × 10^–3 Pa. According to the data of quantumchemical simulation, the absorption peak at a photon energy of 4.6 eV in TaO_x observed in the absorptioncoefficient dispersion spectrum is due to oxygen vacancy. The peak in the Raman-scattering spectra of TaO_x films with metallic dispersion at frequencies of 200–230 cm^–1 is presumably related to tantalum nanoclusters.     

Effect of oxygen impurity on the efficiency of the formation of complexes with H-bond and aggregation of color centers in lithium fluoride

The effect of impurities on the efficiency of the formation of color centers and hydrogen-bonded molecular complexes upon exposure to various radiations in lithium fluoride crystals grown in air is studied. The results of experiments for measuring optical properties, IR vibrational spectra, luminescence, and thermally stimulated luminescence are presented. The fact that the band in the range of 1800–2300 cm^–1 corresponds to stretching vibrations of a complex with strong hydrogen bond is proved based on the Fermi-resonance perturbation in the region of 2080 cm^–1, shaped as the Evans hole and bands A, B, and C. It is shown that the composition of these complexes includes an OH^– ion and an HF molecule. The crucial role of O^2? V _a ⁺ oxygen dipoles in the aggregation efficiency and gradient distribution of color centers and radiation resistance of hydroxyl ions is revealed. It is shown that products of radiation decomposition of OH^– ions stimulate, while decay of O^2? V _a ⁺ dipoles suppress, the formation of positively charged color centers.