CexPr1-xO2-δ复合氧化物的XRD和Raman表征

A series of Ce_xPr_1-xO_2-δ mixed oxides were synthesized by sol-gel method and characterized by Raman and XRD techniques. When x value was changed from 1.0 to 0.5, only a cubic phase CeO₂ was observed. The samples were very well crystallized on decreasing x from 0.50 to 0.99. For Ce_xPr_1-xO_2-δ samples 465 cm^-1 and 1 150 cm^-1 Raman peaks are attributed to the Raman active F_2g mode of CeO₂. The broad peak at about 570 cm^-1 in the region of 0.3 ≤x≤ 0.99 can be linked to lattice defects resulting in oxygen vacancies. The new band at about 195 cm^-1 may be attributed to the asymmetric vibration caused by the formation of oxygen vacancies. Calcination temperatures had great effect on the peak intensity for CeO₂ but less effect on Ce_0.8Pr_0.2O_2-δ in Raman spectra. It might be due to the transformation of the colors for the mixed oxides, the insertion of Pr atom into the ceria lattice could enhance the sintering resistance and thermal stability of the mixed oxides.     

高比表面CexZr1-xO2复合氧化物的制备及表征

分别采用共沉淀法和阴离子表面活性剂模板法制备了Ce_xZr_1-xO₂复合氧化物。采用XRD、AFM、FTIR以及N₂吸附-脱附等方法对样品进行了表征。结果表明，共沉淀法合成的样品在500 ℃煅烧2 h后，生成了立方相Ce_0.75Zr_0.25O₂和四方相Ce_0.5Zr_0.5O₂固溶体，比表面积为62.1 m²·g^-1，孔体积为0.097 cm³·g^-1；以阴离子表面活性剂十二烷基苯磺酸钠(SDBS)为模板剂，乙二胺为助模板剂合成的样品在500 ℃煅烧2 h后，生成了纯四方相Ce_0.5Zr_0.5O₂固溶体，比表面积为180 m²·g^-1，孔体积为0.182 cm³·g^-1。结果表明，以阴离子表面活性剂SDBS为模板剂，可以合成高比表面积且具有介孔结构的Ce_0.5Zr_0.5O₂复合氧化物；加入乙二胺作为助模板剂可明显的提高比表面积和孔体积。     

铈锆比对低贵金属Pt＋Rh/Ce0.3＋xZr0.6－xY0.1O1.95＋Al2O3三效催化剂性能的影响

用共沉淀法制得一系列铈锆比不同的Ce_0.3＋xZr_0.6－xY_0.1O_1.95储氧材料, 并用于制备了一系列低贵金属Pt＋Rh/Ce_0.3＋xZr_0.6－xY_0.1O_1.95＋Al₂O₃三效催化剂. 用比表面、程序升温还原以及X射线衍射对该系列催化剂进行表征, 结果发现, 催化剂的活性与催化剂中贵金属的还原性能密切相关, 低铈储氧材料比高铈储氧材料更有利于促进贵金属还原, 因而含低铈储氧材料催化剂的活性明显优于含高铈储氧材料催化剂的活性, Pt＋Rh/Ce_0.35Zr_0.55Y_0.1O_1.95＋Al₂O₃的活性最佳, 对HC, CO和NO的起燃温度最低分别为: 235, 175, 200 ℃. 样品经1000 ℃水热老化之后, 贵金属Pt被烧结而发生迁移, 使得催化剂的活性及还原性能变差, 含低铈材料的催化剂的抗老化性能优于含高铈材料的催化剂, 其中Pt＋Rh/Ce_0.35Zr_0.55Y_0.1O_1.95＋Al₂O₃的抗老化性能最好.     

固体电解质La2-xCaxMo1.7W0.3O9-δ(0≤x≤0.2)的合成、表征及电性能

在氧离子导体La₂Mo_1.7W_0.3O₉的基础上，采用固相法合成了La位掺杂的Ca系列新型氧化物La_2-xCa_xMo_1.7W_0.3O_9-δ(0≤x≤0.2)。通过XRD、Raman和XPS等手段对化合物结构进行表征，交流阻抗谱测试其电性能。结果表明：掺杂离子Ca²⁺的半径小于基质离子La³⁺的半径导致晶格收缩；Ca的掺杂在La₂Mo_1.7W_0.3O₉自身内置氧空位的基础上增加了额外的氧空位，提高了氧离子导体的电导率，550 ℃电导率由0.79 × 10^-4 S·cm^-1 (x=0.0)增加到1.5 × 10^-4 S·cm^-1 (x=0.16，0.2)，电导率增加89.9%。     

镁掺杂氧化铈整体式催化剂催化CO2和CH3OH直接合成碳酸二甲酯

采用共沉淀法成功地合成了不同Mg掺杂量的Ce_1-xMg_xO₂(x=0.05、0.10、0.15、0.20)固溶体催化材料,并运用透射电子显微镜(TEM)、X射线衍射(XRD)、氮气吸附-脱附测试、拉曼光谱、X射线光电子能谱(XPS)、CO₂程序升温脱附(CO₂-TPD)等技术对这些材料进行了表征。结果发现,通过调控CeO₂晶格中Mg的含量,可以调控所制备的Ce_1-xMg_xO₂催化材料的粒径、比表面积、表面缺陷等。其中Ce_0.90Mg_0.10O₂展现了最佳的表面性质,具有最小的平均粒径(约5.8 nm),最大的比表面积(约136 m2·g^-1)以及最高的表面氧含量(31.98%)。将Ce_1-xMg_xO₂催化材料涂覆在堇青石蜂窝陶瓷上制成整体催化剂,考察其对CO₂和CH₃OH直接合成碳酸二甲酯的催化性能。在140℃、2.4 MPa、反应2 h的条件下,Ce_0.90Mg_0.10O₂整体催化剂上碳酸二甲酯的收率高达20.21%,催化效果明显优于CeO₂和其余的Ce_1-xMg_xO₂(x=0.05、0.15、0.20)催化材料。     

Ce1－xNdxO2－δ固溶体的电子顺磁共振谱和阻抗谱的研究

利用溶胶-凝胶方法在800 ℃焙烧10 h后, 合成了固溶体Ce_1－xNd_xO_2－δ (x＝0.05～0.55), X射线衍射(XRD)测试表明固溶体已经形成立方萤石结构; 电子顺磁共振谱(EPR)研究表明在固溶体Ce_1－xNd_xO_2－δ中随着掺杂量x的增大, Ce^3＋离子含量减少, 说明掺杂Nd^3＋离子可以抑制Ce^4＋的还原; 交流阻抗谱的测量表明固溶体Ce_0.9Nd_0.1O_2－d 具有离子导电特性, 600和700 ℃时的电导率分别为4.25×10^－3和1.12×10^－2 S•cm^－1, 活化能为0.68 eV.     

铈锆比对低贵金属Pt＋Rh/Ce0.3＋xZr0.6－xY0.1O1.95＋Al2O3三效催化剂性能的影响

用共沉淀法制得一系列铈锆比不同的Ce_0.3＋xZr_0.6－xY_0.1O_1.95储氧材料, 并用于制备了一系列低贵金属Pt＋Rh/Ce_0.3＋xZr_0.6－xY_0.1O_1.95＋Al₂O₃三效催化剂. 用比表面、程序升温还原以及X射线衍射对该系列催化剂进行表征, 结果发现, 催化剂的活性与催化剂中贵金属的还原性能密切相关, 低铈储氧材料比高铈储氧材料更有利于促进贵金属还原, 因而含低铈储氧材料催化剂的活性明显优于含高铈储氧材料催化剂的活性, Pt＋Rh/Ce_0.35Zr_0.55Y_0.1O_1.95＋Al₂O₃的活性最佳, 对HC, CO和NO的起燃温度最低分别为: 235, 175, 200 ℃. 样品经1000 ℃水热老化之后, 贵金属Pt被烧结而发生迁移, 使得催化剂的活性及还原性能变差, 含低铈材料的催化剂的抗老化性能优于含高铈材料的催化剂, 其中Pt＋Rh/Ce_0.35Zr_0.55Y_0.1O_1.95＋Al₂O₃的抗老化性能最好.     

Pt/ZrO2-Al2O3催化剂催化氧化C3H6和CO性能

采用共沉淀法合成了ZrO₂与Al₂O₃的不同质量比的ZrO₂-Al₂O₃复合氧化物,并以此为载体通过等体积浸渍法制备了1.5% Pt/ZrO₂-Al₂O₃（w/w）催化剂。以C₃H₆和CO为反应物的催化性能评价显示,在系列催化剂中以Pt/Zr（0.4）-Al催化剂催化氧化活性最为优异,其C₃H₆和CO的起燃温度（T₅₀）小于125℃,完全转化温度（T₉₀）小于150℃。采用XRD、低温N₂吸附、H₂-TPR、CO脉冲吸附等分析表征技术探索了催化剂物相结构、比表面积、颗粒尺寸等对催化活性的影响规律。结果发现,ZrO₂-Al₂O₃复合氧化物具有Al₂O₃材料的介孔织构和大比表面积特性,且产生了Al_xZr_1-xO_y固溶体新物相。适当的ZrO₂与Al₂O₃的质量比,是改善Pt与ZrO₂-Al₂O₃的相互作用强度,促进贵金属Pt的分散,提升Pt/ZrO₂-Al₂O₃催化剂的低温氧化活性的关键。     

非晶态ZrO2镶嵌的超细CeO2催化HCl氧化

采用不同方法制备了铈锆复合氧化物催化剂用于催化HCl氧化反应。自发沉积策略制备的CeO₂@ZrO₂催化剂中,超细CeO₂纳米粒子均匀的镶嵌于非晶态ZrO₂中。CeO₂粒子显著的“尺寸效应”使得该催化剂具有更高的Ce³⁺和氧空位浓度,而较高的Ce³⁺和氧空位浓度使得催化剂具有优异的低温氧化还原性能和储释氧能力。催化性能测试表明,CeO₂@ZrO₂催化剂展现出最好的催化活性（1.90 g_Cl2·g_cat^-1·h^-1）,同时CeO₂粒子周围非晶态的ZrO₂阻碍CeO₂的高温烧结,提高了该催化剂的稳定性。     

Mg掺杂In2O3-x催化剂光热催化CO2加氢

为提高光热催化CO₂加氢In₂O₃催化剂的催化活性,采用均相水热法制备Mg (OH)₂-In (OH)₃前驱体,通过高温煅烧和H₂-还原处理得到了富含氧空位的Mg掺杂In₂O_3-x(Mg-In₂O_3-x)催化剂。在300℃、常压、可见光照射条件下,CO₂加氢转化为CO的CO₂转化率可达31.20%,CO产生速率为14.22 mmol·g_cat^-1·h^-1,CO选择性为100%。相比于单一In₂O_3-x催化剂,Mg-In₂O_3-x催化剂光热催化CO₂转化率及CO产生速率明显提高,这归因于Mg成功掺杂到In₂O₃晶格中,促进In₂O₃表面氧空位的形成,进而对可见光响应效率大幅提高,并有效减缓光生电子-空穴的复合。     

Pu在Gd2Zr2O7基质中的模拟固化: (Gd1-xCex)2Zr2O7+x的热物理性能研究

采用高温固相反应,以NaF作助熔剂,在1000 ℃的温度下合成了锕系元素Pu的模拟固化体(Gd_1-xCe_x)₂Zr₂O_7+x (0 ≤ x ≤ 0.7).研究了模拟固化体的物相、热膨胀系数(TEC)、热导率(TC)随温度及组成的变化规律.粉末X射线衍射(XRD)测试结果表明: Gd₂Zr₂O₇基质本身呈弱有序烧绿石结构,而用Ce⁴⁺取代Gd³⁺的模拟固化体都呈缺陷萤石结构. (Gd_1-xCe_x)₂Zr₂O_7+x的Ce(3d) X射线光电子能谱(XPS)有六个峰,结合能分别位于881.7, 888.1, 897.8, 900.4, 907.1, 916.1 eV处,与CeO2的XPS图谱非常相似,说明Ce为四价.随着温度的升高,所有样品的热膨胀系数总体上呈增大趋势.在室温至750 ℃附近,大部分样品的热导率随温度的升高而降低,之后热导率又呈小幅上升.在相同温度下,固化体(Gd_1-xCe_x)₂Zr₂O_7+x (0 ≤ x ≤ 0.7)的热膨胀系数及热导率随组成变化呈相同趋势:在0 ≤ x ≤ 0.1范围内随x的增大而增大,随后在x = 0.1-0.7时逐渐减小.     

Structure and redox properties of CexPr1−xO2−δ mixed oxides and their catalytic activities for CO, CH3OH and CH4 combustion

A series of Ce_xPr_1−xO_2−δ mixed oxides were synthesized by a sol–gel method and characterized by Raman, XRD and TPR techniques. The oxidation activity for CO, CH₃OH and CH₄ on these mixed oxides was investigated. When the value x was changed from 1.0 to 0.8, only a cubic phase CeO₂ was observed. The samples were greatly crystallized in the range of the value x from 0.99 to 0.80, which is due to the formation of solid solutions caused by the complete insertion of Pr into the CeO₂ crystal lattices. Raman bands at 465 and 1150 cm⁻¹ in Ce_xPr_1−xO_2−δ samples are attributed to the Raman active F_2g mode of CeO₂. The broad band at around 570 cm⁻¹ in the region of 0.3 ≤ x ≤ 0.99 can be linked to oxygen vacancies. The new band at 195 cm⁻¹ may be ascribed to the asymmetric vibration caused by the formation of oxygen vacancies. The TPR profile of Pr₆O₁₁ shows two reduction peaks and the reduction process is followed: . The reduction temperature of Ce_xPr_1−xO_2−δ mixed oxides is lower than those of Pr₆O₁₁ or CeO₂. TPR results indicate that Ce_xPr_1−xO_2−δ mixed oxides have higher redox properties because of the formation of Ce_xPr_1−xO_2−δ solid solutions. The presence of the oxygen vacancies favors CO and CH₃OH oxidation, while the activity of CH₄ oxidation is mostly related to reduction temperatures and redox properties.     

杂多酸/离子液体杂化材料催化苯的高选择性羟基化

制备了V取代的磷钼酸H_3+xPMo_12-xV_xO₄₀（x=0,1,2）及1-丁基-3-甲基咪唑溴盐离子液体（[C₄mim]Br）,并采用离子交换的方法制备了系列杂化材料（[C₄mim]3+xPMo_12-xV_xO₄₀,x=0,1,2）;采用X射线衍射（XRD）、傅里叶变换红外光谱（FT-IR）、紫外-可见漫反射光谱（UV-Vis DRS）对所制备样品进行了表征;以H₂O₂为氧化剂,考察了所得样品催化苯羟基化制苯酚的活性。结果表明,和相应的离子液体及杂多酸相比,杂化材料的催化活性得到了很大的提高,尤其是催化剂[C₄mim]₅PMo₁₀V₂O₄₀,在优化后的条件下,苯的转化率可达到21%,苯酚的选择性在99%以上。而且,该催化剂具有很好的可重复使用性,连续使用五次后,苯的转化率和苯酚的选择性没有明显降低。     

TiN/HfxZr1-xO2/TiN铁电电容器的原位生长与表征

HfO₂基铁电电容器,特别是TiN/Hf_xZr_1-xO₂/TiN金属-绝缘体-金属电容器,由于其良好的稳定性、高性能和互补金属氧化物半导体(CMOS)兼容性,在新一代非易失性存储器中有着广阔的应用前景。由于TiN/Hf_xZr_1-xO₂/TiN电容器的电性能与Hf_xZr_1-xO₂铁电薄膜与TiN电极层界面质量相关,因此控制TiN/Hf_xZr_1-xO₂/TiN异质结构的制备和表征至关重要。本文报道了一种三明治结构：Hf_xZr_1-xO₂铁电薄膜夹在两个TiN电极之间的新的制备方法,通过超高真空系统互连的原子层沉积(ALD)和磁控溅射设备实现。原位生长和表征结果表明,ZrO₂掺杂浓度和快速热退火温度可以调节TiN/Hf_xZr_1-xO₂/TiN异质结的铁电性能,并能很好地被互连系统监控。在该体系中,通过在HfO₂中掺杂50% (molar fraction, x) ZrO₂并且在600 ℃下快速热退火(RTA),获得了21.5 μC·cm^-2的高剩余极化率和1.35 V的低矫顽电压。     

Reducing Packing Factor of ZnIn2S4 to Promote Photocatalytic Activity

Due to the quite sluggish charge-carrier separation in semiconductor photocatalysts, the photocatalytic activity of these materials is still far inferior than anticipated. Herein, a novel approach to reducing the packing factor(PF) of ZnIn₂S₄ semiconductors to improve the charge-carrier separation is offered. The well-crystallized Zn_1-xIn₂S_4-x(x=0, 0.05, 0.1) powders were productively prepared through solid-state reactions. Their structures were verified by the high-resolution transmission electron microscopy, powder X-ray diffraction, and X-ray photoelectron spectroscopy. The PF values of Zn_1-xIn₂S_4-x(x=0, 0.05, 0.1) samples were calculated to be 0.683, 0.651, and 0.618, respectively. The reduction of the PF for Zn_1-xIn₂S_4-x with increasing x can promote the separation of photoexcited carriers, and this process was endorsed by their photoelectric response and photoluminescence emission spectra. The Zn_0.9In₂S_3.9 sample with a lower PF value presents roughly 21 times higher photocurrent density and four times higher photodegrading rate of methyl orange than those of pristine ZnIn₂S₄.     

Zr掺杂对PdO/Ce1-xPdxO2-δ催化剂CO和CH4催化氧化的影响

采用溶液燃烧法制备出PdO/PdO/Ce_1-xPd_xO_2-δ （PdO/CP）和PdO/Ce1-x-yPdxZryO₂-δ （PdO/CPZ）催化剂,通过硝酸处理去除催化剂表面的PdO物种得到对应的PdO/Ce_1-xPd_xO_2-δ （CP）和Ce1-x-yPdxZryO₂-δ （CPZ）催化剂。考究四种催化剂（PdO/CP、PdO/CPZ、CP、CPZ）对CO和CH₄的氧化活性,并计算得出表面PdO和Pdⁿ⁺物种的转化频率（TOF）。结果表明Zr的添加对PdO催化剂上CO和CH₄的催化氧化活性具有不同的影响。Zr的添加对PdO/CPZ和CPZ催化剂的CO催化活性具有明显的促进作用,前者归因于PdO/CPZ催化剂表面生成了更小颗粒的PdO粒子,后者归因于CPZ催化剂中含有更多的氧空位。对于CH₄的催化氧化,Pdⁿ⁺物种起到关键的作用。由于Zr的掺杂导致CeO₂的晶格中Pd物种的含量减少,致使PdO/CPZ催化剂和CPZ催化剂对CH₄氧化活性的降低。     

钾改性Mn/Ce0.65Zr0.35O2催化剂催化氧化甲苯

Volatile organic compounds (VOCs) are both harmful to human health and the environment; however, catalytic combustion offers a promising method for VOC purification because of its high efficiency without secondary pollution. Although manganese-based catalysts have been well studied for VOC catalytic oxidation, their catalytic activity at low temperature must be improved. Alkali metals as promoters have the potential to modulate the electronic and structural properties of the catalysts, improving their catalytic activity. Herein, a Ce_0.65Zr_0.35O₂ support was prepared by co-precipitation and MnO_x/Ce_0.65Zr_0.35O₂ catalysts were obtained through the incipient-wetness impregnation method. The catalytic properties of K-modified MnO_x/Ce_0.65Zr_0.35O₂ for toluene oxidation with different molar ratios of K/Mn were investigated. In addition, the catalysts were characterized by XRD, UV/visible Raman, Hydrogen temperature program reduction (H₂-TPR), Oxygen temperature programmed desorption (O₂-TPD), X-ray photoelectron spectroscopy (XPS) and in situ diffuse reflectance FTIR spectroscopy (DRIFTS) experiments. The results showed that alkali metal doping with K significantly improved the catalytic activity. In particular, when the molar ratio of K/Mn was 0.2, the monolith catalyst Mn/Ce_0.65Zr_0.35O₂-K-0.2 exhibited the best performance with the lowest complete conversion temperature T₉₀ of 242 ℃ at a GHSV of 12000 h⁻¹. The XRD results suggested that MnO_x was uniformly distributed on the surface of the catalyst and that Mn⁴⁺ partially reduced to Mn³⁺ on the addition of K. The Raman spectrum demonstrated that with increasing K content, both the β- and α-MnO₂ phases coexisted on the Mn/Ce_0.65Zr_0.35O₂-K-0.2 catalyst, increasing the number of surface defect sites. The H₂-TPR experiment results confirmed that Mn/Ce_0.65Zr_0.35O₂-K-0.2 exhibited the lowest reduction temperature and good reducibility. From the O₂-TPD experiments, it was clear that Mn/Ce_0.65Zr_0.35O₂-K-0.2 contained the most surface adsorbed oxygen species and excellent lattice oxygen mobility, which benefitted the toluene oxidation activity. In addition, the XPS results suggested that the content of surface adsorbed oxygen species of the Mn/Ce_0.65Zr_0.35O₂-K-0.2 catalyst was the highest among all the tested samples. In addition, toluene-TPSR in N₂ as measured by in situ DRIFTs analysis demonstrated that available lattice oxygen was present in the Mn/Ce_0.65Zr_0.35O₂-K-0.2 catalyst. Therefore, the Mn/Ce_0.65Zr_0.35O₂-K-0.2 catalyst exhibited the best redox properties and oxygen mobility of the prepared samples and showed excellent activity toward toluene oxidation. Therefore, it was concluded that the addition of an appropriate amount of K improved the redox performance of the catalyst and increased the number of surface defect sites and mobility of the lattice oxygen of the catalyst as well as the concentration of the surface active oxygen species, thereby significantly improving catalytic ability.     

Regioselective Magneto-optical Heteronanorods Enabling Chiroptical Activity

Synthesis of colloidal heterostructures with rational design and controllable precision represents a promising strategy for achieving novel properties and applications. Most recently, Zhuang et al. reported a "double-buffer-layer engineering" concept that was capable of regioselectively growing magnetic Fe₃O₄ nanodomains only at single ends of semiconductor Zn_xCd_1-xS(0 ≤ x ≤ 1) nanorods. The resulting composite nanostructures exhibited chiroptical activity due to the local magnetic fields introduced by regiospecific magnetic nanodomains, highlighting the promise of controlled colloidal chemistry in synthesizing chiroptical nanostructures in the absence of chiral molecules and helical geometries. The work has been published online in Nature Nanotechnology on January 20, 2020.     

Ce-Zr-O2上CuO分散性对CO氧化活性的影响

采用柠檬酸法制备了Ce-Zr-O₂固溶体, 并负载了过渡金属和贵金属Pt, 其中, 以Cu作为活性组分, 在CO氧化反应中表现出最高的活性, CO完全转化的温度约为120 ℃, 明显高于负载1%Pt(质量分数)催化剂的活性. 掺杂少量Zr到CeO₂(Ce_0.8Zr_0.2O₂)中对Cu基催化剂有非常好的促进作用. 分别采用等体积浸渍法(IW)、 沉淀沉积法(DP)、 水热法(HT)以及柠檬酸法(CA)制备了Cu负载质量分数为20%的Cu/Ce_0.8Zr_0.2O₂催化剂. 结果表明, 由沉淀沉积法制备的Cu/Ce_0.8Zr_0.2O₂催化剂的活性最高, 在100 ℃时, CO可完全转化. TEM结果表明, CuO物种很好地分散在Ce_0.8Zr_0.2O₂上. 吸附实验数据表明, Cu基催化剂上CO与O₂之间较弱的竞争吸附是其活性高于Pt催化剂的主要原因. Cu基催化剂上的氧空位对促进O₂的吸附具有重要作用, 也是影响CO低温氧化的重要因素之一.     

Influence of composition and thermal treatment on the properties of Cu2+xTa4O12+δ

Polycrystalline samples of Cu_2+xTa₄O_12+δ were prepared by solid-state reactions. Copper tantalate shows a remarkable compositional flexibility with respect to both the copper and oxygen stoichiometry. Single phase compounds could be synthesised for 0.125 ≤ x ≤ 0.5. Slowly cooled samples are green and possess a pseudo-tetragonal unit cell, which changes to a pseudo-cubic symmetry for x ≥ 0.45. Rapidly cooled aliquots are brown and have a (pseudo-) cubic structure. For both the slow-cooled and quenched samples a linear increase of the oxygen content with x was observed, the values of δ for the latter being significantly smaller. Magnetic measurements reveal a ferrimagnetic transition at 12.5 K, the strength of which is strongly reduced both by increasing the copper content and by quenching.