Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror

A 1.6μm mode-locked Raman fiber laser pumped by a 1480nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locking represents a highly practical solution for short-pulse operation.     

Passively Q-switched Er-doped fiber laser using a semiconductor saturable absorber mirror

A passively Q-switched Er-doped fiber laser using a semiconductor saturable absorber mirror (SESAM) is demonstrated. Q-switching is observed with the output power produced at a slope efficiency of 29.4% with respect to the absorbed pump power. The maximum average output power of 8.37 mW is achieved. The pulse repetition frequency obtained can be turned from 1.72 to 7.95 kHz. The pulse energy of 17.2 nJ has been obtained at the pump power of 46.75 mW, and the pulse width is 30 μs.     

Excitability in a semiconductor laser with saturable absorber

We show that a monolithic and compact vertical cavity laser with intracavity saturable absorber can emit short excitable pulses. These calibrated optical pulses can be excited as a response to an input perturbation whose amplitude is above a certain threshold. Subnanosecond excitable response is promising for applications to novel all-optical devices for information processing or logical gates.     

Passively mode-locked fiber ring laser using semiconductor saturable absorber mirror

We experimentally demonstrate a fiber laser passively mode-locked by a semiconductor saturable absorber mirror (SESAM) in a ring cavity. A pulse series with a temporal width of 1 ns is generated at a repetition rate of 12.3 MHz. With careful polarization adjustment, the pulse width decreases, the peak power increases and the spectral sidebands are formed in the optical spectrum. The reason of the phenomenon above has been analyzed. In addition, the characteristic of the pulse with different length of the Er³⁺ Doped Fiber (EDF) is studied and the results show that it is reabsorption that causes the laser to shift to longer wavelength direction when the EDF length increases.     

Passive mode locking of a diode-end-pumped Nd:GdVO4 laser with a semiconductor saturable absorber mirror

We report an end-pumped and passive mode-locking all-solid-state laser. The laser consists of a Nd:GdVO4 crystal and a linear resonator with a semiconductor saturable absorber mirror that yield mode locking. We achieved stable continuous-wave mode locking with an 8-ps pulse duration at a 154-MHz repetition rate. The average output power was 600 mW with 4 W of pump power. To our knowledge this is the first report of the use of a Nd:GdVO4 crystal for mode locking with a semiconductor saturable absorber mirror.     

Low-repetition-rate,all-polarization-maintaining Yb-doped fiber laser mode-locked by a semiconductor saturable absorber

A low-repetition-rate, all-polarization-maintaining(PM)-fiber sub-nanosecond oscillator is presented, which is simple and low-cost, composed of standard components. The ring cavity is elongated by 114-m-long standard PM fiber, and passively mode-locked by a fiber pigtailed semiconductor saturable absorber. Linearly polarized pulses with 1.66 MHz repetition rate and 22 dB polarization extinction ratio are generated at a wavelength of 1030 nm, which is determined by an intracavity filter. In addition, to demonstrate that the oscillator is a good seed for high energy pulse generation, an all-fiber master oscillator power amplifier is built and amplified pulses with energy about 2 μJ are obtained.     

Self-starting simple structured dual-wavelength mode-locked erbium-doped fiber laser using a transmission-type semiconductor saturable absorber

A self-starting simple structured dual-wavelength passively mode-locked(ML) erbium-doped fiber(EDF) laser is proposed in this Letter. An all-fiber ring cavity is adopted and a transmission-type semiconductor saturable absorber is used as modelocker. In this laser, there are two gain humps located at the 1530 nm region and the 1550 nm region, respectively. Along with the length of EDF increasing, the intensity of the hump at 1530 nm region is gradually suppressed because of the re-absorption of emission by the ground state. With the proper length of EDF, the gain intensities of two regions are very close. When the pump power is above the ML threshold, the self-starting dual-wavelength ML operation is achieved easily without manual adjustment. The two spectral peaks with close intensities are located at 1532 and 1552 nm, respectively. The effect of intracavity dispersion on the output spectrum is also experimentally demonstrated.     

Dynamics of photoluminescence in GaInNAs saturable absorber mirrors

Femtosecond time-resolved photoluminescence experiments have been used to study the nonlinear dynamics of novel monolithic GaInNAs/GaAs semiconductor saturable absorber mirrors at 1.08 and 1.55 m. The mirror structures were grown using molecular-beam epitaxy followed by Ni-ion implantation and thermal annealing. We present photoluminescence measurements showing the critical role of post-growth processing on the response time of GaInNAs/GaAs absorber mirrors. PACS 42.65.Re; 42.50.Nn; 42.70.Nq     

Passively mode-locked Nd:GGG laser with a semiconductor saturable absorber mirror

The mode-locking operation of the Nd:GGG crystal with a semiconductor saturable absorber mirror (SESAM) was demonstrated. Continuous wave (CW) mode-locking was obtained with the pulse duration of 11 ps and the pulse repetition rate of 40.38 MHz. At 7 W of pump power, the maximum average output power of 1.1 W was obtained with the slope efficiency of 18.1%.     

Harmonically mode-locked laser stabilized by semiconductor saturable absorber modulated with the residual pump

Stabilization of a passive harmonically mode-locked laser is demonstrated by directly modulating a 980-nm pump diode laser used both to provide gain and to optically modulate an intracavity saturable absorber. The results indicate a reduction of the undesired laser modes by more than 55 dB. The timing jitter was decreased by 9 dB. Received: 3 April 2002 / Revised version: 30 April 2002 / Published online: 12 July 2002     

5.3-W Nd:YVO4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM), and the pulse repetition rate is 83 MHz.     

5.3-W Nd:YVO_4 passively mode-locked laser by a novel semiconductor saturable absorber mirror

We report a diode end-pumped continuous wave (CW) passively mode-locked Nd:YVO4 laser with a homemade semiconductor saturable absorber mirror (SESAM). The maximum average output power is 5.3 W at the incident pump power of 17 W, which corresponds to an optical-optical conversion efficiency of 31.2% and slope efficiency of 34.7%. The corresponding optical spectrum has a 0.2-nm full width at half maximum (FWHM). and the pulse repetition rate is 83 MHz.     

Properties of a vector soliton laser passively mode-locked by a fiber-based semiconductor saturable absorber operating in transmission

We experimentally demonstrate a passively mode-locked fiber laser employing a fiber-based semiconductor saturable absorber (SSA) operating in transmission. Polarization rotation locked vector solitons are observed in the laser. Due to the intrinsic dynamic feature of the laser, period-doubling of these vector solitons has also been observed. Furthermore, extra spectral sidebands are formed on the optical spectrum, caused by the energy exchange between the two orthogonal polarization components of the vector solitons. By careful reduction of the pump power together with fine adjustment to the cavity birefringence, period-one state can further be obtained. Additionally, the phase noise properties of the vector soliton fiber laser have also been characterized experimentally and analytically.     

1.5-microm monolithic GaInNAs semiconductor saturable-absorber mode locking of an erbium fiber laser

We present a new monolithic GaAs-based semiconductor saturable absorber operating at 1.55 microm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.3-1.55-microm wavelength range.     

基于石墨烯的1064nm连续锁模超短脉冲激光器

介绍了利用沉积在增透镜上的石墨烯薄膜作为可饱和吸收体、808 nm激光二极管端面泵浦Nd∶YVO4晶体的1 064 nm连续锁模激光输出特性。采用W型折叠谐振腔结构,在808 nm泵浦功率为80 W时,有稳定的连续锁模脉冲输出,平均输出功率达到185 mW;当抽运功率增加到160 W时,获得了中心波长1 0634 nm、脉冲宽度为518 fs、重复频率为667 MHz、最大平均输出功率为323 mW的百飞秒量级超短脉冲激光输出。实验结果表明：石墨烯具有优良的可饱和吸收性,在1 064 nm波段能够实现高功率、百飞秒量级连续锁模脉冲激光输出。     

Passive mode-locking of a Coumarin dye laser from 505–520 nm using DOCI as the saturable absorber

We report the passive mode-locking of a flash lamp pumped dye laser operating with a mixture of Coumarin 500^F and Coumarin 504 lasing dyes using DOCI (3,3'-diethyl oxacarbocyanine iodide) as the saturable absorber. We also suggest the formation of a transient photoisomer to be responsible for the mode-locking obtained with DOCI at long wavelengths, where the normal form has a very low absorption cross section.     

Phase locking and periodic evolution of solitons in passively mode-locked fiber lasers with a semiconductor saturable absorber

Passively mode-locked lasers with intracavity weakly birefringent fiber are theoretically analyzed based on two coupled complex one-dimensional Ginzburg-Landau equations. The model includes fiber birefringence, spectral filtering, saturable gain, and saturable loss. Phase-locked soliton solutions are found for small amounts of birefringence and several types of soliton with periodic polarization evolution for higher amounts of birefringence. Numerical simulations show qualitative agreement with experimental results.     

Ultrafast spectroscopy of semiconductor saturable absorber mirror

Ultrafast spectroscopy of semiconductor saturable absorber mirror(SESAM) is measured using a femtosecond pump-probe experiment.This allows dynamic responses of SESAM in the cavity to be concluded by ultrafast spectroscopy.Change in reflection is measured as a function of pump-probe delay for different pump excitation fluences.Change of nonlinear reflection of SESAM is measured as a function of incident light energy density.When the excitation fluence increases,nonlinear change in ultrafast spectroscopy of SESAM becomes increasingly significant.When SESAM is pumped by an ultrahigh excitation fluence,the energy density of which is approximately 1400 μJ/cm2,two-photon absorption can be observed visibly in its ultrafast spectroscopy.     

Passive mode locking of Yb:KLuW using a single-walled carbon nanotube saturable absorber

Mode locking of an Yb-doped bulk laser in the 1 microm spectral range using a single-walled carbon nanotube saturable absorber (SWCNT-SA) is demonstrated for the first time, to our knowledge. Passive mode locking of an Yb:KLuW laser resulted in nearly transform-limited pulses as short as 115 fs at 1048 nm. In addition, the nonlinear response of the SWCNT-SA was measured, yielding a modulation depth of 0.25% and a relaxation time of 750 fs.     

Theory of passive mode locking of colour-center lasers by a fast saturable absorber

A theoretical model of passive mode locking of colour-center lasers by an effective fast saturable absorber is presented where a hybrid saturation scheme is applied to consider the interaction of the mode-locked pulse with the gain medium. Intracavity group-velocity dispersion and Kerr-type nonlinearity are taken into account and their combined action can result in solition-like pulse shaping and shortening. Chirped steady-state solutions whose carrier frequency can be shifted with respect to the central frequency of the gain are found in a limited range of the parameters specifying the problem.