原子力显微镜与x射线光电子能谱对LiBq4/ITO和LiBq4/CuPc/ITO的表面分析

利用原子力显微镜对8-羟基喹啉硼化锂(LiBq₄)/铟锡氧化物和8-羟基喹啉硼化锂/酞菁铜(CuPc)/铟锡氧化物表面分别进行了扫描，显示了LiBq₄在不同衬底上的形貌差异，并进一步利用样品表面的x射线光电子能谱图验证了这一差异.实验表明，CuPc层的加入改善了LiBq₄的成膜质量，并将这种改善归因于分子构型与电子亲和势的不同. 关键词： 原子力显微镜 x射线光电子能谱 电子亲和势     

CuPc/MoS2范德瓦耳斯异质结荧光特性

在众多二维材料中,过渡金属硫族化合物由于其具有独特的光电特性深受广大研究者喜爱.近年来,由二维过渡金属硫族化合物材料与有机半导体结合构建的范德瓦耳斯异质结受到极大的关注.这种异质结可以利用两者的优势对光电特性等性能进行调控,为许多基础物理和功能器件的构建提供了研究思路.本文构建了酞菁铜/二硫化钼(CuPc/MoS₂)范德瓦耳斯异质结,并对其荧光特性进行了表征和分析.与单层MoS₂相比较发现,引入有机半导体CuPc后,异质结当中发生了明显的荧光淬灭现象.通过荧光分析,该现象可以用引入CuPc后异质结中负三激子与中性激子之比增加来解释.此外,通过第一性原理计算分析发现,引入CuPc会在MoS₂的禁带中引入中间带隙态,使得CuPc与MoS₂之间产生非辐射复合,这同样会导致荧光淬灭的发生.CuPc/MoS₂异质结的荧光淬灭现象可以为同类型范德瓦耳斯异质结的光电特性调控研究提供参考和思路.     

α-P/GaAs(100)界面的光电子能谱研究

本文采用X射线光电子能谱、紫外光电子能谱和低能电子衍射对室温下P在GaAs(100)表面上的生长进行了研究。结果表明,在生长初期P是成团吸附的,随着淀积量的增加而生长成α-P薄膜,该薄膜的价带结构与等离子体淀积的α-P:H薄膜的价带结构相似。在界面处有约一单层的P与衬底表面的Ga成键。α-P覆盖层使GaAs表面势垒下降约0.2eV。 关键词：     

薄膜生长速率对有机光伏器件性能的影响

采用真空热蒸发镀膜的方法制备了酞菁铜(CuPc)和富勒烯(C60)构成的平面异质结结构光伏器件,并初步研究了CuPc薄膜生长速率对器件光伏性能的影响,我们发现以较大薄膜生长速率制备的器件表现出较大的短路电流和能量转换效率。X射线衍射和原子力显微镜观察的结果表明生长速率较大的CuPc薄膜结晶相含量较少,薄膜结构较均匀、致密、平整,这可能使得CuPc薄膜激子扩散和载流子迁移特性得到提高,也可能改善其与C60受主薄膜和ITO阳极的接触,并有利于载流子的分离和收集,从而表现出较好的光伏特性。     

原子力显微镜与x射线光电子能谱对LiBq4/ITO和LiBq4/CuPc/ITO的表面分析

利用原子力显微镜对8-羟基喹啉硼化锂(LiBq4)/铟锡氧化物和8-羟基喹啉硼化锂/酞菁铜(CuPc)/铟锡氧化物表面分别进行了扫描,显示了LiBq4在不同衬底上的形貌差异,并进一步利用样品表面的x射线光电子能谱图验证了这一差异.实验表明,CuPc层的加入改善了LiBq4的成膜质量,并将这种改善归因于分子构型与电子亲和势的不同.     

不同衬底温度下PLD法制备的氧化锌薄膜的特性

利用GCR-170型脉冲激光器Nd:YAG的三次谐波(355nm),以蓝宝石Al2O3(0001)为衬底,在不同温度下采用脉冲激光沉积法制备了ZnO薄膜.通过原子力显微镜、Raman谱、光致发光谱、红外透射谱、霍尔效应和表面粗糙度分析仪对制备的ZnO薄膜进行了测试.分析了在不同衬底温度下薄膜的表面形貌、光学特性,同时进行了薄膜结构和厚度的测试.研究表明:衬底温度对ZnO薄膜的表面形貌、光学特性、结构特性都是重要的工艺参量,尤其在500℃时沉积的ZnO薄膜致密均匀,并表现出较强的紫外发射峰.     

NiTi合金薄膜厚度对相变温度影响的X射线光电子能谱分析

采用X射线衍射和X射线光电子能谱实验手段对不同厚度的NiTi薄膜相变温度的变化进行了分析.结果表明在相同衬底温度和退火条件下,3?μm厚度的薄膜晶化温度高于18?μm厚度的薄膜.衬底温度越高,薄膜越易晶化,退火后薄膜奥氏体相转变温度As越低.薄膜的表面有TiO₂氧化层形成,氧化层阻止了Ni原子渗出;膜与基片的界面存在Ti₂O₃和NiO.由于表面和界面氧化层的存在,不同厚度的薄膜内层的厚度也不同,因而薄膜越薄,Ni原子的含量就越高.Ni原子的含量的不同会影响薄膜的相变温度. 关键词： NiTi合金薄膜 X射线衍射 相变 X射线光电子能谱     

基于电子回旋共振-等离子体增强金属有机物化学气相沉积技术生长GaMnN稀磁半导体的研究

利用电子回旋共振-等离子体增强金属有机物化学气相沉积 (ECR-PEMOCVD)方法,采用二茂锰(Cp₂Mn)作为Mn源,高纯氮气作为氮源,三乙基镓(TEGa)作为Ga源,在蓝宝石(α-Al₂O₃)(0001)衬底上外延生长GaMnN稀磁半导体薄膜.反射高能电子衍射(RHEED)、X射线衍射(XRD)、原子力显微镜(AFM)表征了GaMnN薄膜的晶体结构和表面形貌.GaMnN薄膜均表现出良好的(0002)择优取向,表明制备的薄膜倾向于 关键词： GaMnN薄膜 稀磁半导体 铁磁性 居里温度     

非晶Ni_(88)P_(12)合金薄膜的表面形貌特征与晶化行为的研究

采用化学镀的方法在３６３Ｋ和ｐ型Ｓｉ（１００）衬底上制得非晶Ｎｉ８８Ｐ１２合金薄膜．利用Ｘ射线衍射、Ｘ射线光电子能谱、扫描隧道显微镜和原子力显微镜对非晶合金薄膜及其经处理后形成的氧化态、还原态和晶态的结构、组分和表面的形貌特征作了研究，并对它的晶化行为作了初步探讨．结果表明，非晶合金薄膜是由纳米级微粒聚集成微米级颗粒组成；在低于晶化温度条件下经氧化和还原处理后的薄膜表面晶化；在晶化过程中，合金薄膜的非晶纳米微粒转变为微晶后长大成晶粒，其表面结构光滑平坦，几何边界清晰     

低温制备微晶硅薄膜生长机制的研究

采用热丝化学气相沉积技术制备了一系列处于不同生长阶段的薄膜样品，用原子力显微镜系 统地研究生长在单晶硅衬底和玻璃衬底上薄膜表面形貌的演化.按照分形理论分析得到：在 玻璃衬底上的硅薄膜以零扩散随机生长模式生长；而在单晶硅衬底上，薄膜早期以有限扩散 生长模式生长，当膜厚超过某一临界厚度时转变为零扩散随机生长模式.岛面密度与膜厚的 依赖关系表明，在临界厚度时硅衬底和玻璃衬底上的岛面密度均出现了极大值.Raman谱的测 量证实，玻璃衬底上薄膜临界厚度与非晶/微晶相变之间存在密切的关系.不同的衬底材料直 接影响反应 关键词： 生长机制 微晶硅薄膜 表面形貌 热丝化学气相沉积     

Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions

The interfacial properties of MoS₂/4H-SiC heterostructures were studied by combining first-principles calculations and X-ray photoelectron spectroscopy. Experimental (theoretical) valence band offsets (VBOs) increase from 1.49 (1.46) to 2.19 (2.36) eV with increasing MoS₂ monolayer (1L) up to 4 layers (4L). A strong interlayer interaction was revealed at 1L MoS₂/SiC interface. Fermi level pinning and totally surface passivation were realized for 4H-SiC (0001) surface. About 0.96e per unit cell transferring forms an electric field from SiC to MoS₂. Then, 1L MoS₂/SiC interface exhibits type I band alignment with the asymmetric conduction band offset (CBO) and VBO. For 2L and 4L MoS₂/SiC, Fermi level was just pinning at the lower MoS₂ 1L. The interaction keeps weak vdW interaction between upper and lower MoS₂ layers. They exhibit the type II band alignments and the enlarged CBOs and VBOs, which is attributed to weak vdW interaction and strong interlayer orbital coupling in the multilayer MoS₂. High efficiency of charge separation will emerge due to the asymmetric band alignment and built-in electric field for all the MoS₂/SiC interfaces. The multiple interfacial interactions provide a new modulated perspective for the next-generation electronics and optoelectronics based on the 2D/3D semiconductors heterojunctions.     

层数变化对堆叠生长的MoS_(2(1-x))Se_(2x)电子结构的影响

二维过渡金属硫化物因其独特的光电特性在多功能光电器件方面具有广泛的应用前景.为了进一步拓展其在微纳光电子器件方面的应用范围,并提高器件性能,人们开展了通过合金手段改变端组分材料配比实现对二维半导体材料带隙调控的带隙工程以及调控生长条件改变材料形貌和结构的缺陷工程研究.本文利用光学、原子力和扫描电子显微镜等设备以及拉曼和光致发光光谱等手段对由化学气相沉积法生长出来的堆叠状MoS_(2(1-x))Se_(2x)合金的性质进行了研究.不同于大多数单层或少层MoS_(2(1-x))Se_(2x)合金的情况,堆叠生长的阶梯状MoS_(2(1-x))Se_(2x)合金材料在厚度从2.2 nm (约3层)一直增加到5.6 nm (约7层)时都显出了较强的发光特性,甚至在100 nm厚时,样品的发光谱线仍具有两个发光峰.两个激子发光峰分别来源于自旋轨道耦合造成的价带劈裂.随着厚度的增加,两个峰都逐渐红移,显示了合金掺杂时的能带弯曲效应.拉曼光谱给出了类MoS_2和类MoSe_2两套振动模.随着厚度的增加,拉曼峰位几乎不移动,但面内的两个振动模E_(2g(Mo-Se))和E_(2g(Mo-s))逐渐显现并增强.显然缺陷和应力是影响堆叠生长MoS_(2(1-x))Se_(2x)合金样品电子结构的主要因素,这为特殊功能器件的制备和可控缺陷工程的研究提供了有益的参考.     

Chemical effects of Ne bombardment on the MoS2(0001) surface studied by high-resolution photoelectron spectroscopy

The effect of 1 keV Ne⁺ bombardment on the clean MoS₂(0001)-1 × 1 surface with fluences between 4 × 10¹⁴ and 4 × 10¹⁶ Ne⁺/cm² was studied using high-resolution photoelectron spectroscopy excited with synchrotron radiation. Spectra of the Mo 3d and S 2p core levels were measured with photon energies that ensured that the kinetic energy of the photoelectrons was the same, resulting in the same depth being probed for both core levels. For lower fluences (i.e., 2 × 10¹⁵ Ne⁺/cm²), S vacancy defect formation occurs in the MoS₂ lattice, with the concurrent formation of a small amount (< 10%) of dispersed elemental molybdenum [Mo(0)]. For fluences greater than l × 10¹⁶ Ne⁺/cm², the Mo(0) is the predominant species in the surface region, while the remaining species consist of amorphous MoS_2−x and polysulfide species. Valence band spectra taken with photon energies of 152 and 225 eV were consistent with the core level results. The movement of the valence band maximum toward the Fermi level indicated the formation of a metallic surface region. Annealing the sample to temperatures up to 1000 K resulted in the formation of metallic Mo coexisting, in approximately equal amounts, with reformed MoS₂ in a surface with no long-range order as determined by LEED. Finally, a qualitative depth distribution of the chemical species present after Ne⁺ bombardment was determined by varying the photon energies used for the core level spectra. The results indicate that the preferential sputtering of sulfur over molybdenum occurs predominantly through a mechanism involving chemical bonding effects, specifically, through the preferential emission of polysulfide ions over other species in the bombarded region.     

Au的金属颗粒对二硫化钼发光增强

二硫化钼(MoS₂)是一种层状的二维过渡金属硫族化合物材料,从块体到单层,禁带由间接带隙变为直接带隙,由于通常机械剥落的单层MoS₂是n型掺杂的,使得其发光效率仍然很低. 在本文中,采用匀胶机旋涂的方法将共振吸收峰在514 nm附近的纳米金颗粒尽可能均匀的铺在单层、双层以及多层的MoS₂样品表面,发现单层和双层样品的光致发光谱(PL谱)分别增强了约30倍和2倍同时伴随着峰位的蓝移,而多层样品的发光强度也略有增强. 拉曼特性揭示了纳米金颗粒对单层和双层MoS₂样品产生了明显的p型掺杂,从而增强了发光;同时纳米金颗粒的表面等离子激元效应对激发光的天线作用也是增强MoS₂的光致发光的一个因素. 关键词： 二硫化钼 光致发光 p型掺杂 Au纳米颗粒     

(Cu,N)共掺杂TiO2/MoS2异质结的电子和光学性能:杂化泛函HSE06

在密度泛函理论的基础上,系统地研究了Cu/N（共）掺杂的TiO₂/MoS₂异质结体系的几何结构、电子结构和光学性质.计算发现,TiO₂/MoS₂异质结的带隙相比于纯的TiO₂（101）表面明显变小,Cu/N（共）掺杂TiO₂/MoS₂异质结体系的禁带宽度也明显地减小,这导致光子激发能量的降低和光吸收能力的提高.通过计算Cu/N（共）掺杂TiO₂/MoS₂的差分电荷密度,发现光生电子与空穴积累在掺杂后的TiO₂（101）表面和单层MoS₂之间,这表明掺杂杂质体系可以有效地抑制光生电子-空穴对的复合.此外,我们计算了在不同压力下TiO₂/MoS₂异质结的几何、电子和光学性质,发现适当增加压力可以有效提高异质结的光吸收性能.本文结果表明,Cu/N（共）掺杂TiO₂/MoS₂异质结和对TiO₂/MoS₂异质结加压都能有效地提高材料的光学性能.     

Removal of GaN film over AlGaN with inductively coupled BCl3/Ar atomic layer etch

Atomic layer etching(ALE)of thin film GaN(0001)is reported in detail using sequential surface modification by BCl₃ adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a reactive ion etching system.The estimated etching rate of GaN is~0.74 nm/cycle.The GaN is removed from the surface of AlGaN after 135 cycles.To study the mechanism of the etching,the detailed characterization and analyses are carried out,including scanning electron microscope(SEM),x-ray photoelectron spectroscopy(XPS),and atomic force microscope(AFM).It is found that in the presence of GaCl_x after surface modification by BCl₃,the GaCl_x disappears after having exposed to low energy Ar plasma,which effectively exhibits the mechanism of atomic layer etch.This technique enables a uniform and reproducible fabrication process for enhancement-mode high electron mobility transistors with a p-GaN gate.     

快重离子辐照对MoS2热导率的影响研究

利用0.97 GeV的209Bi离子辐照二硫化钼（MoS₂）晶体,辐照注量范围为1×1010～1×1012 ions/cm2,结合原子力显微镜（AFM）观测和Raman光谱分析研究了快重离子辐照对MoS₂热导率的影响。实验结果显示,快重离子辐照在MoS₂中产生了潜径迹,较高激光功率下的Raman测试使样品局部温度升高,导致E_1/2g和A_1g峰随注量增加向低波数方向移动,且峰形展宽。引入了通过改变激光功率测量Raman光谱得到MoS₂热导率的计算方法,获得了不同辐照注量下MoS₂的热导率的定量分析结果,随注量增加,热导率不断降低,从未辐照样品的563 W/mK下降到1×1012 ions/cm2辐照时的132 W/mK。Molybdenum disulphide (MoS₂) was irradiated by 0.97 GeV 209Bi ions with the fluence of 1×1010 to 1×1012 ions/cm2. The irradiation effect on the thermal conductivity of MoS₂ was analyzed by atomic force microscope (AFM) and Raman spectroscopy. The experimental results show that hillock-like latent tracks are observed on irradiated MoS₂ by AFM. The measurement of MoS₂ by Raman spectrometer with high laser power results in the increase of local temperature of MoS₂, which cause the downshift of peaks position and broadening of E_1/2g and A_1g peak. Furthermore, according to Raman spectra measured at different laser power, thermal conductivity of MoS₂ before and after irradiation was calculated, which show that the thermal conductivity of MoS₂ decreases with increasing fluence, from 563 to 132 W/mK for pristine and 1×1012 ions/cm2 irradiated MoS₂, respectively.     

二硫化钼/石墨烯异质结的界面结合作用及其对带边电位影响的理论研究

采用基于色散修正的平面波超软赝势方法研究了二硫化钼/石墨烯异质结的界面结合作用及其对电荷分布和带边电位的影响.研究表明二硫化钼与石墨烯之间可以形成范德瓦耳斯力结合的稳定堆叠结构.通过能带结构计算,发现二硫化钼与石墨烯的耦合导致二硫化钼成为n型半导体,石墨烯转变成小带隙的p型体系.并通过电子密度差分图证实了界面内二硫化钼附近聚集负电荷,石墨烯附近聚集正电荷,界面内形成的内建电场可以抑制光生电子-空穴对的复合.石墨烯的引入可以调制二硫化钼的能带,使其导带底上移至-0.31 eV,提高了光生电子还原能力,有利于光催化还原反应.     

Iron oxide thin film growth on Al2O3/NiAl(1 1 0)

The electronic structure and the growth morphology of iron oxide thin films were studied by means of Synchrotron Radiation Photoelectron Spectroscopy (SRPES) and Low Energy Electron Diffraction (LEED). A thin well-ordered alumina film on a NiAl(1 1 0) single crystal surface as a template for iron oxide growth was employed. Two different methods of iron oxide film preparation were applied. In the first attempt, iron deposited at room temperature was subsequently annealed in oxygen. Even though a whole layer of iron was oxidized, an expected long-range order was not achieved. The second attempt was to perform reactive deposition. For this reason iron was evaporated in oxygen ambient at elevated substrate temperature. This method turned out to be more efficient. Diffused but clear LEED patterns of six-fold symmetry indicating hexagonal surface atoms arrangement were observed. From the PES measurements, binding energies for Fe2p for grown iron oxide film were established as well as energy distribution curves for the valence band. Growth curves based on Fe3p core-level peak intensities for iron and iron oxide were plotted identifying type of film growth for both deposition methods. Based upon these results we have found evidence for interdiffusion in the interface between alumina and iron oxide at the early stages of growth. Further deposition led to formation of Fe₃O₄(1 1 1) (magnetite) overlayer. Moreover, the quality of the film could also be improved by long-time annealing at temperatures not exceeding 575 K. Higher annealing temperature caused disappearance of LEED pattern indicating loss of long-range ordering.     

Electronic properties of 2H-stacking bilayer MoS2 measured by terahertz time-domain spectroscopy

Bilayer (BL) molybdenum disulfide (MoS₂) is one of the most important electronic structures not only in valleytronics but also in realizing twistronic systems on the basis of the topological mosaics in moiré superlattices. In this work, BL MoS₂ on sapphire substrate with 2H-stacking structure is fabricated. We apply the terahertz (THz) time-domain spectroscopy (TDS) for examining the basic optoelectronic properties of this kind of BL MoS₂. The optical conductivity of BL MoS₂ is obtained in temperature regime from 80 K to 280 K. Through fitting the experimental data with the theoretical formula, the key sample parameters of BL MoS₂ can be determined, such as the electron density, the electronic relaxation time and the electronic localization factor. The temperature dependence of these parameters is examined and analyzed. We find that, similar to monolayer (ML) MoS₂, BL MoS₂ with 2H-stacking can respond strongly to THz radiation field and show semiconductor-like optoelectronic features. The theoretical calculations using density functional theory (DFT) can help us to further understand why the THz optoelectronic properties of BL MoS₂ differ from those observed for ML MoS₂. The results obtained from this study indicate that the THz TDS can be applied suitably to study the optoelectronic properties of BL MoS₂ based twistronic systems for novel applications as optical and optoelectronic materials and devices.