基于混合量子点的颜色可调QLED器件性能及其白光应用

采用红色、绿色混合量子点作为发光层,制备了结构为ITO/PEDOT:PSS/TFB/Mixed-QDs/ZnO/Ag的颜色可调量子点发光二极管(QLED)器件,研究了QLED器件的电致发光光谱.实验结果表明,混合QLED器件具有明显的颜色可调特性.随着外加电压增大,混合QLED器件呈现出从暗红色到橙黄色再到耀眼的黄绿色...     

氧化锌锡作为电子传输层的量子点发光二极管

本文研究了以胶状量子点作为发光层和有机/无机混合材料作 为电子-空穴传输层的电致发光二极管器件. CdSe 量子点以薄膜的形式夹在无机氧化锌锡电子传输层和有机TPD空穴传输层中间构成三明治结构. 氧化锌锡电子传输层采用磁控溅射实现, 有机TPD空穴传输层和量子点发光层则采用旋涂的方法制备, 得到的QD-LEDs器件结构界面陡峭、表面平整. 光电特性表征结果显示器件的电致发光具有良好的单色性、低的开启电压, 利 用具有高电子迁移率和低载流子浓度的无机氧化锌锡薄膜作为电子传输层可 以实现器件在大气环境下稳定、明亮的电致发光. 本文分析了器件的工作机理并通过改变氧化锌锡的电导率达到控制器件中电子和空穴的注入比的目的, 优化了器件的光电性能. 关键词： 量子点 氧化锌锡 电致发光 电子传输层     

倒置器件结构及局域等离子体效应对CdSe量子点LED发光性能的改进

研究了倒置器件结构以及CdSe量子点发光材料与金属纳米粒子之间的相互作用对量子点的电致发光性能的影响。利用TiO₂作为电子传输/注入层,成功地制备了倒置结构的量子点电致发光器件。通过对单载流子器件电压-电流特性的分析,证明了ITO作为阴极到TiO₂的电子注入特性与Al作为阴极时的效果几乎相同。观察到金属纳米粒子产生的局域等离子体效应提高了器件的效率,使得效率随电流增大而降低的速度明显减小。在电流密度为200 mA/cm²时,电致发光器件的效率大约提高了42%。     

基于量子点和MEH-PPV的白光发光二极管的研究

利用无机纳米材料与有机聚合物材料相结合的方法制备白光发光二极管器件, 研究了蓝光量子点QDs(B)掺杂聚[2-甲氧基-5-(2-乙基己氧基-1, 4-苯撑乙烯撑](MEH-PPV) 复合体系的发光特性及量子点QDs(B) 掺杂浓度(质量分数)不同对器件发光特性的影响. 制备了ITO/PEDOT:PSS/MEH-PPV:QDs(B)/LiF/Al 结构的电致发光器件, 测试了器件的电致发光光谱和电学、光学特性. 当QDs掺杂浓度为40%, 驱动电压为8 V时器件能得到较为理想的白光发射. 同时, 对比研究了非掺杂体系的发光特性, 制备了结构为ITO/PEDOT:PSS/MEH-PPV/QDs(B)/LiF/Al的器件, 掺杂体系相较于非掺杂体系, 器件的最大亮度增大, 启亮电压降低, 并分析了掺杂体系器件性能改善的原因.     

外加条件对量子点红外探测器暗电流特性的影响

考虑微米尺度和纳米尺度下电子传输对激发能的共同影响,基于电子漂移速度对外加电场的依赖,研究外加电场和外加温度对量子点红外探测器暗电流特性的影响.结果表明:外加电场在0~25kV/cm范围内时,暗电流模型和实验数据变化相吻合.暗电流随着外加电场的增加而增加,并且当外加电场小于6kV/cm时暗电流增加迅速,而当外加电场大于6kV/cm时暗电流增加缓慢.暗电流随着外加温度的增加迅速增加.该研究为量子点红外探测器的优化设计和性能提高提供了理论参考.     

芴-咔唑新型共聚物/PVK掺杂体系的电致发光特性研究

研究了新型的芴-咔唑共聚物(PFC)与聚乙烯咔唑(PVK)掺杂体系的光致发光和电致发光特性.制备了结构分别为indium-tin-oxide(ITO)/PVK:PFC/bathocuproine(BCP)/tris-(8-hydroxylquinoline)-aluminum (Alq₃) /Mg:Ag，ITO/PFC/BCP/Alq₃/Mg∶Ag和ITO/PVK/BCP/Alq₃/Mg∶Ag的三种有机电致发光器件.对器件的光电特性进行了测试.结果表明，掺杂体系中的PVK有效地抑制了固态膜中PFC激基缔合物的形成.掺杂器件在不同的外加电场作用下发生发光层位置的移动，通过调节外加电场，可以获得从绿光到蓝光的可见光发射.当外加电压大于7V时，掺杂器件的蓝色发光亮度达到1650cd/m²，推测其中可能存在从PVK到PFC的能量传递过程.     

掺磷光材料有机电致发光器件的能量传递

将高量子效率的磷光材料fac-tris-2-phenylpyridine iridium(III) (Ir(ppy)3)按不同的比例掺杂到具有载流子传输能力的主体材料poly(N-vinylcarbazole) (PVK)中作为发光层制备磷光电致发光器件。通过对器件发光机制的研究,发现光致发光过程中起主导作用的是Fo¨ster能量转移机制;而在电致发光过程中,器件的发光性能受Dexter能量转移和电荷陷获2种能量传递形式的影响。器件的I-V-L特性表明：Ir(ppy)3的掺杂比例为5%时,器件的光功率效率最大,能量转移最充分。     

聚合物/碳量子点复合EL器件及光谱移动机理

制备了结构为ITO/PEDOT∶PSS/polyvinylcarbazole(PVK)/carbon quantum dots(CDs)/LiF/Al的电致发光器件。器件的发光光谱显示:在电压从7 V增大到13 V的过程中,光谱峰值从380 nm移动到520 nm,色坐标由(0.20,0.20)移动到(0.29,0.35)。经与PL光谱对比认为,EL光谱包含了PVK与碳量子点的双重贡献,随着电压的增大,碳量子点的发射逐渐增强,PVK发光先增强后减弱。结合器件能级结构讨论了器件的发光机制,认为低电场下的PVK兼具发光层和电子阻挡层的功能,EL光谱为PVK层和碳量子点的发光叠加;随着电场强度的增大,碳量子点和PVK界面区的空间电荷阻止了电子向PVK的传输,光谱转变为由碳量子点和激基复合物的共同贡献。     

PVK∶DBVP掺杂体系的能量转移及发光性质的研究

研究了不同比例的PVK与齐聚PPV衍生物DBVP掺杂体系的能量转移和发光特性.通过对PVK,DBVP及PVK:DBVP掺杂体系的UV-vis,PL和PLE光谱的研究,分析了PVK与DBVP之间的能量转移过程.利用PVK在体系中类似于溶剂的分散作用,制备了结构为ITO/PEDOT/PVK:DBVP/LiF/Al的电致发光器件,研究了掺杂体系的电致发光性能.结果表明,在掺杂体系的光致发光和电致发光中,PVK的发射被有效地抑制,PVK与DBVP之间发生了非常有效的能量转移,通过调节PVK与DBVP的比例,可以获得蓝色和绿色发光,同时可以改善器件的发光性能,当PVK与DBVP的重量比为1∶2时,器件的绿色发光效率达到1·06cd/A,此时发光亮度为52cd/m2.     

PVK:DBVP掺杂体系的能量转移及发光性质的研究

研究了不同比例的PVK与齐聚PPV衍生物DBVP掺杂体系的能量转移和发光特性.通过对PVK，DBVP及PVK: DBVP掺杂体系的UV-vis，PL和PLE光谱的研究，分析了PVK与DBVP之间的能量转移过程.利用PVK在体系中类似于溶剂的分散作用，制备了结构为ITO/PEDOT/PVK: DBVP/LiF/Al的电致发光器件，研究了掺杂体系的电致发光性能.结果表明，在掺杂体系的光致发光和电致发光中，PVK的发射被有效地抑制，PVK与DBVP之间发生了非常有效的能量转移，通过调节PVK与DBVP的比例，可以获得蓝色和绿色发光，同时可以改善器件的发光性能，当PVK与DBVP的重量比为1∶2时，器件的绿色发光效率达到1.06cd/A，此时发光亮度为52cd/m².     

Donor bound excitons in wurtzite InGaN quantum dots: Effects of built-in electric fields

Within the framework of the effective-mass approximation and variational approach, we present calculations of the bound exciton binding energy, due to an ionized donor, in wurtzite In_xGa_1−xN/GaN strained quantum dots (QDs), considering three-dimensional confinement of the electron and hole in the QDs and the strong built-in electric field induced by the spontaneous and piezoelectric polarizations. Our results show that the position of the ionized donor, the strong built-in electric field, and the structural parameters of the QDs have a strong influence on the donor binding energy. The variation of this energy versus position of the donor ion is in double figures of milli-electron volt. Realistic cases, including the donor in the QD and in the surrounding barriers, are considered.     

Steady State and Time Resolved Spectroscopic Study of CdSe and CdSe/ZnS QDs:FRET Approach

This article highlights some physical studies on the relaxation dynamics and Förster resonance energy transfer (FRET) of semiconductor quantum dots (QDs) to proximal dye molecule and the way these phenomena change with core to core-shell QD is discussed. Efforts to understand the optical and carrier relaxation dynamics of CdSe and CdSe/ZnS QDs are made by using absorption, steady-state fluorescence and time-resolved fluorescence (TCSPC) techniques. Steady-state as well as time-resolved fluorescence measurements were employed to evaluate the QD PL quenching induced by the proximal Rhodamine 101 dye molecule and to examine the influence of deep trap states on energy transfer efficiency. The FRET parameters such as spectral overlap, Förster distance, intermolecular distance for each donor-acceptor pair are determined and variation of these parameters from core to core-shell QD is discussed.     

White light-emitting quantum dot diodes and tuning of luminescence processes

A novel white light-emitting diode based on a large Stokes shift (~200 nm) and using pure green light-emitting CdSeS quantum dots (QDs) with an Ag/ZnSnO/QDs/spiro-TPD/ITO structure has been fabricated in which ZnSnO and spiro-TPD are served as the electron and hole transport layer, respectively. The large Stokes shift of the CdSeS QDs excludes potentially Förster resonance energy transfer process, which allows spiro-TPD to act as both an emitter and hole transport layer. The devices exhibit a wide EL spectrum consisting of three components: blue emission from spiro-TPD, green emission from QD band–band recombination, and red emission from QD surface-state recombination. We further found that as the intensity ratios among these three components vary with bias the color of the QD light-emitting diodes is tunable. The device displays a good white light-emitting characteristic with CIE coordinates of (0.281, 0.384) at an appropriate bias.     

Estimation of built-in dipole moment in InAs quantum dots

We have fabricated a Schottky diode embedding InAs self-assembled quantum dots (QDs) grown by alternately supplying In and As sources. As a function of the electric field, we have investigated the photoluminescence (PL) for the InAs QDs in the Schottky diode at 300 K. We controlled the electric field in order that the QD layer was located in the depletion region of Schottky diode. The relationship between the electric field and the depletion width of the Schottky diode was deduced through the capacitance-voltage measurement. The Stark shift was observed in PL spectra for QDs; the energy of the PL line shifted to the lower energy as the electric field increased. It was also observed that the PL emission intensity gradually decreased. By the fitting to the experimental data, we determined a built-in dipole moment, corresponding to an electron-hole separation.     

ZnS型薄膜电致发光器件中能谷转移过程的蒙特卡罗模拟

计算了ZnS中电子谷间散射的速率.利用蒙特卡罗方法,研究了ZnS型薄膜电致发光器件中电子的能谷转移过程.得出了能谷转移的瞬态过程,电场对谷间分布的影响以及不同能谷中电子动能分布的特点.提出了高能谷的能量存储效应.这些结果可作为研究电致发光过程的基本数据.     

Effect of diamine treatment on the conversion efficiency of PbSe colloidal quantum dot solar cells

Polymer-free photovoltaic devices were fabricated via a solution process using PbSe colloidal quantum dots (QDs) and an organic semiconductor (tetrabenzoporphyrin, BP) that can be prepared in situ from a soluble precursor. The device structure was ITO/PEDOT/BP:QD/QD/Al, where the BP:QD and QD layers correspond to a bulk heterojunction and a buffer layer, respectively. The buffer layer was treated with ethylenediamine (EDA) to crosslink the QDs. As a result, the energy conversion efficiency of the EDA-treated device was superior to that of an untreated device, mainly due to an increase in the short-circuit current density.     

Experimental investigation of energy transfer between CdSe/ZnS quantum dots and different-sized gold nanoparticles

Hybrid nanostructures of quantum dots(QDs) and metallic nanostructure are attractive for future use in a variety of optoelectronic devices. For photodetection applications, it is important that the photoluminescence (PL) of QDs is quenched by the metallic nanostructures. Here, the quenching efficiency of CdSe/ZnS core-shell quantum dots (QDs) with different sized gold nanoparticles (NPs) films through energy transfer is investigated by measuring the PL intensity of the hybrid nanostructures. In our research, the gold NPs films are formed by the post-annealing of the deposited Au films on the quartz substrate. We find that the energy transfer from the QDs to the Au NPs strongly depends on the sizes of the Au NPs. For CdSe/ZnS QDs direct contact with the Au NPs films, the largest energy transfer efficiency are detected when the resonance absorption peak of the Au NPs is nearest to the emission peak of the CdSe/ZnS QDs. However, when there is a PMMA spacer between the QDs layer and the Au NPs films, firstly, we find that the energy transfer efficiency is weakened, and the largest energy transfer efficiency is obtained when the resonant absorption peak of the Au NPs is farthest to the emission peak wavelength of CdSe/ZnS QDs. These results will be useful for the potential design of the high efficiency QDs optoelectronic devices.     

Exciton in wurtzite GaN/AlxGa1−xN coupled quantum dots

Based on effective-mass approximation, we present a three-dimensional study of the exciton in GaN/Al_xGa_1−xN vertically coupled quantum dots (QDs) by a variational approach. The strong built-in electric field due to the piezoelectricity and spontaneous polarization is considered. The relationship between exciton states and structural parameters of wurtzite GaN/Al_xGa_1−xN coupled QDs is studied in detail. Our numerical results show that the strong built-in electric field in the GaN/Al_xGa_1−xN strained coupled QDs leads to a marked reduction of the effective band gap of GaN QDs. The exciton binding energy, the QD transition energy and the electron-hole recombination rate are reduced if barrier thickness L^AlGaN is increased. The sizes of QDs have a significant influence on the exciton state and interband optical transitions in coupled QDs.     

Lateral electric field effects on quantum size confinement in cylindrical quantum dot under parabolic potential

Within the effective mass approximation, we investigated theoretically the ground-state energy of a single particle and the binding energy of the neutral donor impurity (D⁰) affected by a lateral electric field in a parabolic quantum dot (QD). The results show that the electron and the hole ground-state energy and the band to band transition energies shift to lower values (red shift) by increasing the field intensity. The quantum Stark shift (QSS) for the electron increases rapidly in the quasi spherical QD (QSQD) by increasing the lateral field, whereas for the hole it increases monotony. In the cylindrical QDs (CQDs), we found that the QSS for electron and hole increase monotonically. The quantum size, lateral electric field and impurity position effect on the binding energy of neutral donor (D⁰) is studied. Unexpected behavior of D⁰ in quantum well limit (QW), the binding energy of D⁰ is increasing (blue shift) with increasing QD radius R$R$ at the presence of a lateral electric field. It appears that for a fixed size of the QD, the off-center binding energy decreases when the impurity ion is displaced from the center to the QD borders, while it is shifted to lower energy with increasing the field.     

Energy transfer in associates of semiconductor quantum dots with tetrapyridinoporphyrazine molecules

The interaction of CdSe/ZnS quantum dots (QDs) with metal-free tetrapyridinoporphyrazine (TPPA) molecules in chloroform has been investigated. It was found that, at QD concentrations lower than ～3 × 10^?7 M, QD luminescence is quenched in the presence of TPPA and characteristic changes occur in the absorption and luminescence spectra of TPPA, which reflect the interaction of TPPA molecules with the QD surface. Along with the QD luminescence quenching, sensitized luminescence of TPPA molecules adsorbed on QDs was observed. The luminescence excitation spectra of adsorbed TPPA molecules unambiguously indicate the presence of energy transfer from QDs to TPPA. The efficiency of energy transfer from QDs to TPPA is estimated from the quantum yield of sensitized TPPA luminescence.