考虑底充胶固化过程的InSb面阵探测器结构分析模型

液氮冲击中In Sb面阵探测器的易碎裂特性制约着探测器的成品率,建立适用于面阵探测器全工艺流程的结构模型是分析、优化探测器结构的有效手段.本文提出了用底充胶体积收缩率来描述底充胶在恒温固化中的体积收缩现象,同时忽略固化中底充胶弹性模量的变化来建立底充胶固化模型,给出了底充胶在恒温固化中生成的热应力/应变上限值.借鉴前期提出的等效建模思路,结合底充胶固化后的自然冷却过程和随后的液氮冲击实验,建立了适用于In Sb面阵探测器全工艺流程的结构分析模型.探测器历经底充胶固化、自然冷却至室温后的模拟结果与室温下拍摄的探测器形变分布照片高度符合.随后模拟液氮冲击实验,得到面阵探测器中累积的热应力/应变随温度的演变规律,热应力/应变值极值出现的温度区间与液氮冲击实验结果相符合.这表明所建模型适用于预测不同工艺阶段中面阵探测器的形变分布及演变规律.     

InSb面阵探测器法线方向力学参数选取研究

为明确InSb芯片前表面结构缺陷和背面减薄工艺对InSb芯片变形的影响,本文采用降低InSb芯片法线方向杨氏模量的方式,基于热冲击下InSb芯片的典型形变特征来探索InSb芯片力学参数的选取依据．模拟结果表明：当InSb芯片法线方向杨氏模量取体材料的30％时,最大VonMises应力值和法线方向最大应变值均出现在N电极区域,且极值呈非连续分布,这与InSb焦平面探测器碎裂统计报告中典型裂纹起源于N电极区域及多条裂纹同时出现的结论相符合．此外,InSb芯片中铟柱上方区域向上凸起,台面结隔离槽区域往下凹陷,该形变分布也与典型碎裂照片中InSb芯片的应变分布保持一致．因此,基于InSb芯片法线方向应变的判据除了能够预测裂纹起源地及裂纹分布外,还能提供探测器阵列中心区域Z方向应变分布及N电极区域Z方向的应变增强效应,为InSb芯片力学参数的选取提供了依据．     

基于内聚区模型的InSb面阵探测器分层研究

液氮冲击中InSb面阵探测器表面经常出现局部分层、开裂等失效模式.为明晰材料分层、光敏元芯片断裂过程,基于三维等效建模设想,在易分层处添加内聚区模型,合理选取界面分层开裂参数,建立了128×128InSb探测器结构分层模型.模拟结果涵盖了典型碎裂照片中呈现的所有形变信息,即1)在光敏元阵列区域,复现出典型棋盘格屈曲模式;2)在Negative电极区域上方,InSb芯片与下层材料逐渐分开,且分层向两侧逐步扩展;3)在面阵探测器周边区域,表面起伏相对平整.上述模拟结果证明了所建分层模型的正确性和参数选取的合理性,为后续裂纹起源、传播过程的研究提供了模型基础.     

InSb芯片碎裂与迸溅金点的关系

批量生产中经常发生的锑化铟(InSb)芯片碎裂问题制约着InSb红外焦平面探测器(IRFPAs)成品率的提升.经分析认为:低周期液氮冲击下发生在器件边沿区域的InSb芯片破碎与该区域中迸溅金点的存在有关.为从理论上明晰迸溅金点对InSb芯片局部碎裂的影响,本文建立了包含迸溅金点的InSb IRFPAs结构模型,分析了迸...     

128× 128 InSb探测器结构模型研究

热冲击下红外焦平面探测器的高碎裂概率制约着其成品率.为明晰碎裂机理, 基于等效设想, 利用小面阵等效大面阵解决了128×128面阵探测器三维结构建模所需单元数过多的问题, 同时综合考虑材料线膨胀系数的温度依赖性、材料强度的各向异性、表面加工损伤效应, 合理选取InSb材料性能参数, 建立起128×128面阵探测器结构有限元分析模型.模拟结果表明:热冲击下最大Von Mises 应力值出现在N电极区域, 其极值呈非连续分布, 这意味着热冲击下128×128面阵探测器的裂纹起源于N电极区域, 且不止一条.上述结论与碎裂统计分析报告中典型裂纹起源地及裂纹分布这两方面相符合, 这为后续面阵探测器碎裂诱因的研究及结构可靠性设计提供了切实可行的研究思路．     

飞秒激光冲击AZ31B镁合金过程的数值模拟

采用有限元分析法对飞秒激光冲击AZ31B镁合金进行数值模拟,研究了激光冲击处理对镁合金变形过程的影响,分析了单脉冲激光冲击下材料内部的位移、动能、应力和应变的分布情况,得到了材料的瞬态速度和应变率变化过程.仿真结果表明,单脉冲飞秒激光冲击镁合金产生的塑性变形,可在材料表面形成微米级凹坑,中心点处最大位移为34μm,最大变形速度390m/s;在冲击初期,材料表面的应力和应变主要分布在冲击区域中心节点和边缘附近,并且得到镁合金的最大应力和最大应变率分别为955 MPa和1.8×106 s-1.研究结果能够为深入分析飞秒激光与镁合金作用时材料变形参量的变化规律提供数值理论依据.     

液氮环境下的热载流子高功率微波探测器

为提高热载流子高功率微波探测器的灵敏度和降低环境温度对探测器性能的影响,开展了液氮环境下的热载流子探测器研究。提出了局部使用可阀合金块的BJ-100型热载流子探测器制作工艺,增强了探测器的抗温度冲击能力。测试结果表明,探测器硅片焊接的结合力大于4.9 N,能够承受从常温到液氮的反复温度冲击。利用100 kW微波源开展了热载流子探测器在室温和液氮环境下的灵敏度测试实验,结果表明:探测器输出波形与肖特基二极管检波器输出波形一致;在保持偏置电流相同的条件下,相较于常温环境,探测器在液氮环境下的相对灵敏度提升约20倍,输出电压可达V级。     

S弯热应变分析及数值模拟

为了确定S弯结构在降温过程中的变形情况,基于卡氏定理对其一端建立温差位移和广义支反力之间的方程组,根据计算出的广义支反力求解该结构上各处的轴向应变.通过数值模拟对该方法计算出的最大应变和最小应变进行校核,两者非常吻合.可以认为:运用该方法计算类似结构的应变分布是可行的,计算出的结果具有较高的准确度.     

中红外高能激光探测单元

基于光电导探测原理,分析了影响室温光导型InSb探测器在中红外激光功率参数测量中的因素,得到了材料掺杂数密度、环境温度对探测器暗电阻、光谱响应率和光谱探测率的影响规律;开展了探测器在强激光辐照下的热效应理论模拟和实验研究,模拟分析了探测器在激光辐照下的动态响应特性。结果表明:针对测量系统中所使用的探测器,在激光功率密度小于4 W/cm2时,激光热效应对测量结果的影响可忽略;研制了相应的恒流源驱动电路,实现了中红外高能激光功率参数的探测。     

基于斯特林制冷机的磁体冷却系统实验研究

为了减小磁共振成像低温超导磁体冷却过程中的液氮和液氦消耗,提高降温过程的可控性,提出基于千瓦级斯特林制冷机的氦气循环冷却系统,可将磁体快速冷却至液氮温度以下。对冷却系统建立数学物理模型并开展数值计算,在氦气平均压力为1.7 bar、流速为9.8 m/s时,系统冷却总重量为2 t的室温超导磁体至液氮温度仅需59.0 h。基于模拟结果开展实验研究,在相同条件下磁体实际降温时间为69.5 h,模拟计算与实验结果吻合良好。结果表明,该系统具备快速冷却超导磁体的能力,具有广阔的应用前景和深远的影响。     

Frustum pyramid shape of indium bump to lengthen cycling life of InSb infrared detector

The thermal deformation appearing in indium antimonide infrared focal plane arrays (InSb IRFPAs) subjected to thermal shock tests, will easily incur the fracture of InSb chip, this phenomenon restricts the final yield of InSb IRFPAs. In light of the proposed equivalent method, the three dimensional structural modeling of InSb IRFPAs is developed, and the simulated strain distributions are consistent with the buckling pattern, the shallow groove and the local flatness, appearing on the top surface of InSb IRFPAs at the corresponding regions. After comparing the deformation profiles at different regions, we deduce that the top surface flatness of InSb IRFPAs will be improved with frustum pyramid indium bump arrays, and this deduction is verified by the subsequent simulation results. That is, when the top surface area of indium bump is smaller than its bottom surface area, in this paper, the diameter of indium bump bottom surface is set with 24 μm, the simulated Z-components of strain is uniformly covering the whole top surface of InSb IRFPAs, and the deformation amplitude is decreased slowly with the decreasing top surface area of indium frustum pyramid arrays. These findings are beneficial to further improve the flatness of InSb IRFPAs, correspondingly, to lengthen its temperature cycling life.     

Modeling and deformation analyzing of InSb focal plane arrays detector under thermal shock

A higher fracture probability appearing in indium antimonide (InSb) infrared focal plane arrays (IRFPAs) subjected to the thermal shock test, restricts its final yield. In light of the proposed equivalent method, where a 32 × 32 array is employed to replace the real 128 × 128 array, a three-dimensional modeling of InSb IRFPAs is developed to explore its deformation rules. To research the damage degree to the mechanical properties of InSb chip from the back surface thinning process, the elastic modulus of InSb chip along the normal direction is lessened. Simulation results show when the out-of-plane elastic modulus of InSb chip is set with 30% of its Young’s modulus, the simulated Z-components of strain distribution agrees well with the top surface deformation features in 128 × 128 InSb IRFPAs fracture photographs, especially with the crack origination sites, the crack distribution and the global square checkerboard buckling pattern. Thus the Z-components of strain are selected to explore the deformation rules in the layered structure of InSb IRFPAs. Analyzing results show the top surface deformation of InSb IRFPAs originates from the thermal mismatch between the silicon readout integrated circuits (ROIC) and the intermediate layer above, made up of the alternating indium bump array and the reticular underfill. After passing through both the intermediate layer and the InSb chip, the deformation amplitude is reduced firstly from 2.23 μm to 0.24 μm, finally to 0.09 μm. Finally, von Mises stress criterion is employed to explain the causes that cracks always appear in the InSb chip.     

Influences of electrode material and design on the reliability of IRFPAs detector under thermal shock

Under thermal shock, high fracture probability in indium antimonide (InSb) infrared focal plane arrays (IRFPAs) limits its applicability. Typical fracture photographs under thermal shock shows that the cracks originating from the area above public electrode are dominant. In order to learn the influences of electrode material parameter and design on the reliability in InSb IRFPAs detector, the proposed improved equivalent modeling method is employed to build three dimensional InSb IRFPAs structure analysis model. Simulated results show that different electrode materials greatly influence the maximal thermal stress appearing in InSb chip and public electrode, and among the electrode material parameters, the coefficient of thermal expansion is the main affecting factor on thermal stress. With the increasing electrode thickness, the maximum thermal stresses in InSb chip and public electrode both decrease, which means the smaller electrode thickness leads to larger thermal stress in InSb chip and electrode. Besides, it is also found that adjusting the electrode layout to avoid the overlap between indium bumps and the embedded part of electrode can effectively reduce the stress concentration in the area of InSb chip above public electrode. All these are beneficial to optimize the structure of InSb IRFPAs and reduce the fracture probability.     

Local delamination of InSb IRFPAs in liquid nitrogen shock tests

Both the local delamination and the local fracture, appearing in the InSb infrared focal plane arrays (IRFPAs) detectors in liquid nitrogen shock tests, restrict the final yield of the InSb IRFPAs detectors. To explore the mechanism of the local delamination appearing in the region of the negative electrode of the InSb IRFPAs detectors, basing on the created structural modeling of the InSb IRFPAs detectors, we obtain the distributions of the interfacial stresses in the different interfaces of the InSb IRFPAs detectors. After comparing the distributions of the simulated interfacial stresses with the measured local delamination region in the InSb IRFPAs detectors, we think that the local delamination originates from the interfacial shear stresses, and the crack extension is the typical sliding mode. Besides, the weakened gluing strength between the InSb chip and the underfill in the negative electrode region also causes this region to be prone to the local delamination. All these findings provide the theoretical references for both the structure design and the structure optimization of the InSb IRFPAs detectors assembly in the future.     

Design rule of indium bump in infrared focal plane array for longer cycling life

In light of the proposed equivalent method, a three-dimensional structural modeling of InSb infrared focal plane arrays (IRFPAs) is created, and the simulated strain distribution is identical to the deformation distribution on the top surface of InSb IRFPAs. After comparing the deformation features at different regions with the structural characteristics of IRFPAs, we infer that the flatness of InSb IRFPAs will be improved with a thinner indium bump array, and this inference is verified by subsequent simulation results. That is, when the diameter of indium bump is smaller than 20 μm, the simulated Z-components of strain on the whole top surface of InSb IRFPAs is uniform, and the deformation amplitude is small. When the diameter of indium bump is larger than 28 μm, the simulated Z-components of strain increases rapidly with the thicker indium bump, and the flatness of InSb IRFPAs is worsened rapidly. According to the changing trend of deformation amplitude with diameters of indium bump, and employing element pitches normalization method, a design rule of indium bump is proposed. That is, when the diameter of indium bump is shorter than 0.4 times the element pitch, the flatness of InSb IRFPAs is in an acceptable range. This design rule was supported by different IRFPAs with different formats delivered by several main research groups for achieving a longer cycling life.     

Study on thermal effects of InSb infrared focal plane arrays irradiated by pulsed laser

To learn thermal effects of InSb infrared focal plane arrays (IRFPAs) detector irradiated by pulsed laser, basing on ANSYS software, and considering temperature dependent thermal parameters of InSb, a three dimensional temperature field analysis model of InSb IRFPAs detector by 1064 nm Gauss laser irradiation is built. The characteristics of temperature rise and temperature distribution in InSb IRFPAs detector are studied. The results show that the maximum temperature always occurs in InSb chip, locating at the top layer of InSb IRFPAs detector, the temperature rises in each layer are different, and the temperature distribution in InSb IRFPAs detector is quite different from that in single-layer material. The temperature distribution of InSb chip in InSb IRFPAs reduces from center to outside, while it shows not a smooth decrease, but a concentric-ringed ripple decrease with non-consecutive high temperature extremum regions. The temperature distribution patterns in underfill, Si readout integrated circuits are similar to that in InSb chip, but the discontinuous high temperature areas in InSb chip, underfill locate at the regions between indium bumps, and the discontinuous high temperature areas in Si readout integrated circuits locate at the contact area with indium bumps. This different temperature distribution phenomenon in each material is mainly due to its multi-layer architecture and quite different thermal properties of the middle layer, which is an interlacing layout of underfill and indium bumps. Besides, the influences of indium bump structure size on the temperature rise are also discussed. All these results qualitatively reflect the disciplines of temperature rise in InSb IRFPAs detector, providing a theory support for thermal analysis of detectors irradiated by laser.     

Influence of the deformation type and medium on the mechanodynamic penetration of nitrogen molecules into surface layers of armco iron

The extraction of nitrogen molecules from deformed samples of armco iron with different initial structures (annealed and subjected to equal-channel angular pressing) and different deformation prehistories (deformation in liquid nitrogen at 77 K, rolling in air at room temperature, and their combination) has been studied. It has been shown that the preliminary deformation in liquid nitrogen increases its concentration in the surface layer of the material and shifts the principal peak of its release toward low temperatures during heating. The results are associated with the existence of different types of nitrogen traps in annealed and nanostructured armco iron and with their changes during subsequent deformation.     

ITER PF ��Ȧ�����ĵ�MoS2����������Ϳ�㹤���о�

The MoS₂ self-lubrication coating spraying in the surface of 316LN austenitic stainless steel was developed and investigated. The test result shows that the coating had the preferable friction properties at liquid nitrogen temperatures (77K) for high pressure, and the bonding strength test showed that the coating was good adhesion with base materials. In addition, after the thermal shock between 300K and 77K, The coating was free from cracks, flakes and debonding. The average friction coefficient of MoS2 coating under static compression was reported, which indicated that the friction coefficient was less than 0.1, which met the requirements of ITER.