镀膜锰铜计的压阻性能研究

 用磁控阴极等离子体溅射技术在云母基底上制作镀膜锰铜压阻计。5~56 GPa冲击应力的标定实验表明，该计的压阻性能稳定。压阻系数的拟合式为p(GPa)=-0.14+90.63(ΔR/R₀)+10.81(ΔR/R₀)²-7.64(ΔR/R₀)^3，式中R₀为锰铜计初始电阻，ΔR为受压时的电阻变化值。     

凝聚炸药中超压爆轰的实验研究

 采用飞片碰撞技术，在TNT/RDX（40/60）炸药中获得了2.5倍于正常爆轰的最大超压值，得到了超压爆轰下爆轰产物物态方程p=Aρ^{k+A₁(p-p_J)}（p－爆压，单位GPa，ρ－密度，单位kg/m³，A=ρ_J/ρ^k_J，p_J=27.06 GPa，ρ_J=2.3×10³ kg/m³，k=2.77，A₁=2.7×10^-3 GPa^-1，下表J代表正常爆轰状态）。该方程还可以较好地描述超压爆轰产物的二次冲击状态。     

碱卤晶体热导率与压强的关系

 本文指出，关于碱卤晶体热导率λ与压强p之间关系的经验方程：λ=A+Bp或λ=A+Bp+Cp²，可以由Bridgman参量的定义g=-(d lnλ/dlnV)_T和Tait方程ΔV/V₀=ln(1+βp)/α导出。     

23Na（p,α）20Ne反应中几个非孤立共振的研究

本工作测量了²³Na（p,α₀）²⁰Ne_g.s.反应在 E_p=1—2.5MeV 能量范围内和θ_L=30°,150°时的激发函数,还测量了²³Na（p,α₁）²⁰Ne_lst,反应在上述能量范围内和θ_L=30°时的激发函数.对2.171 MeV 共振,在12个角度上测量了（p,α₀）的激发函数,并由激发函数求得了多个角分布,另外在一个固定能量上（150°激发函数的共振峰上）测量了（p,α₀）反应的角分布.对2.117 MeV 共振,在二个固定能量上（150°激发函数的共振峰上和其高能端的半高点处）测量了（p,α₀）反应的角分布.对2.075 MeV 共振,在16个角度上测量了（p,α₀）反应的激发函数,并由激发函数求得了角分布.这三个共振的角分布不是90°对称的,并且共振峰的峰位与角度有关.用复合核理论对它们进行了讨论.     

高组份Al值的AlxGa1-x As和AlxGa1-x As/GaAs/AlxGa1-xAs/GaAs多层结构的MOCVD生长

用自制常压MOCVD系统,在半绝缘GaAs衬底上生长高Al组份Al_xGa_1-xAs（其x值达0.83）,和Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs/GaAs多层结构,表面镜面光亮。生长层厚度从几十到十几μm可控,测试表明外延层晶格结构完整,x值调节范围宽,非有意掺杂低,高纯GaAs外延层载流子浓度n_300K=1.7×10¹⁵cm^-3,n_77K=1.4×10¹⁵cm^-3,迁移率μ_300K=5900cmcm²/V.S,μ_77K=55500cm²/V.S。用电子探针,俄歇能谱仪测不出非有意掺杂的杂质,各层间界面清晰平直。 对GaAs,AlGaAs生长层表面缺陷,衬底偏角生长温度及其它生长条件也进行了初步探讨。     

Uncertainty study of DS-(D-)→γlν (l=e,μ) decays determined by wave function

Wave function is important for determining decay constants f_DS^- and f_D^-. Using the 5 types of D meson wave functions in the heavy quark limit, we studied the uncertainties of radiative pure-leptonic decays of D_S^-(D^-) mesons. The branching ratios are (1.025390—1.706812) × 10^-5 and (0.953498—1.576725) × 10^-6 for D_S^- and D^- decays, respectively, which are sensitive to the type of wave function.     

Testing lepton flavor universality in terms of BESⅢ and charm-tau factory data

The recent measurements on R_K and R_π imply that there exists a possible violation of the leptonic flavor universality which is one of the cornerstones of the Standard Model. It is suggested that a mixing between sterile and active neutrinos might induce such a violation. In this work we consider the scenarios with one or two sterile neutrinos to explicitly realize the data while the constraints from the available experiments have been taken into account. Moreover, as indicated in literature, the deviation of the real PMNS matrix from the symmetric patterns may be due to a μ-τ asymmetry, therefore the measurements on R_D(Ds)eμ=Γ(D(D_s)→ e⁺ν_e)/Γ(D(D_s)→ μ⁺ν_μ) and R_D(Ds)μτ=Γ(D(D_s)→ μ⁺ν_μ)/Γ(D(D_s)→ τ⁺ν_τ) (and for some other heavy mesons B^± and B_c etc.) may shed more light on the physics responsible for the violation of the leptonic flavor universality. The data of BESⅢ are available to test the universality and that of future charm-tau factories will provide more accurate information. In this work, we will discuss R_D(Ds)eμ and R_D(Ds)μτ in detail and also briefly consider the cases for B^± and B_c.     

240mPu形状同质异能态

利用环形固体径迹探测器,通过²³⁸U（α,2n）反应,测量了^240mPu的半衰期和激发函数.定出半衰期T_1/2=3.5±0.5ns.它与基态的能量差E_i=3.2±0.5MeV.     

Al、Ti、V、I的快中子激发曲线

在E_n=4.5—18.3 MeV 能区,用活化法测量了²⁷Al（n,α）²⁴Na,⁴⁶Ti（n,p）⁴⁶Sc¹),⁴⁸Ti（n,p）⁴⁸Sc¹),⁵¹V（n,α）⁴⁸Sc 和¹²⁷I（n,2n）¹²⁶I 的激发曲线.在 E_n=14.61±0.20 MeV 处,以伴随粒子法作中子通量测量,得到了²⁷Al（n,α）²⁴Na 反应截面.其他反应以此截面为标准进行绝对测量.产物核放射性用经标定过效率的 NaI（Tl）闪烁谱仪测量.结果分别为117.5±3.0 mb,291.4±14.0 mb,63.7±3.2 mb,16.8±0.9 mb 和1656±68mb.最后对测量结果进行了简单的比较.     

不等质量(1/2—1/2)或(1/2-1/2)电磁束缚系统的近似B.S.波函数

本文求解了不等质量(1/2—1/2)电磁束缚系统的Bethe-Salpeter方程. 给出了这类系统的近似B.S.波函数. 利用复合粒子量子场论的微扰展开, 在精确到O(α)的量级下, 计算了Ξ⁰→(Σ⁺μ^－)+ν_μ的衰变率和分支比, 结果是wΞ⁰→(Σ⁺μ^－)+ν_μ=1.12(1/秒)R=[wΞ⁰→(Σ⁺μ^－)+ν_μ]/[wΞ⁰→(Σ⁺μ^－)+ν_μ]≥4.7×10^－7. 类似地, 还讨论了Λ→(pμ^－)+ν_μ过程.     

La2/3Ca1/3MnO3薄膜的光致电阻率变化特性

射频磁控溅射法制备了La_2/3Ca_1/3MnO₃纳米薄膜(LCMO).该薄膜发生FM-PM相变的转变点温度为T_c≈308K（近似为电阻峰值温度T_p）；在不同温度下的光电导性质实验表明所制备的LCMO薄膜在连续激光作用时低温段（Tc）表现为光致电阻率增大效应，即ΔR/R＞0，并在R-T曲线拐点附近取得极大值，（ΔR/R）_max=43.5%；当T>T关键词： 钙钛矿薄膜 光响应 电子自旋 小极化子     

Delayed-choice test of quantum complementarity with interfering single photons

We report an experimental test of quantum complementarity with single-photon pulses sent into a Mach-Zehnder interferometer with an output beam splitter of adjustable reflection coefficient R. In addition, the experiment is realized in Wheeler's delayed-choice regime. Each randomly set value of R allows us to observe interference with visibility V and to obtain incomplete which-path information characterized by the distinguishability parameter D. Measured values of V and D are found to fulfill the complementarity relation V2+D2 < or =1.     

Electronic and magnetic properties of the rare earth intermetallic compounds RRu4Sn6 (R=Nd, Sm, Gd, Tb, Dy and Ho)

A number of compounds of structural formula RRu₄Sn₆ (R=rare-earth element) have previously been reported to form in the tetragonal crystal structure with space group I4¯2m. In this structure the R atoms are well isolated from each other. We embarked on this study to investigate the physical properties and to compare with earlier results obtained on the strongly correlated, low charge-carrier density compound CeRu₄Sn₆. Here we report our results of crystallographic, electrical resistivity, and magnetic studies on this family of compounds. In contrast to the behaviour in CeRu₄Sn₆, magnetic ordering is evident at low temperatures in the compounds with R=Sm, Gd, and Dy, as is evidenced by well-resolved anomalies in the temperature dependence of the electrical resistivity and static magnetic susceptibility.     

Li掺杂熔融织构YBCO晶体的面内磁阻

在0～9T范围内测量了磁场平行于c-轴时Li掺杂熔融织构YBCO样品面内电阻的温度关系.我们用A～H模型拟合实验数据.结果表明,以R/Rn=20%作为高阻区和低阻区的分界线,R～T曲线可分别用R=Rn{I0[CH-p(1-t)q]}-2来描述,其中Rn是正常态的电阻Rn=-5.36 0.145T.p=0.78,1.88 和q=1.5, 3.5分别是高阻区和低阻区的拟合参数.     

Dispersion and thermal resistivity in silicon nanofilms by molecular dynamics

On nanoscale, thermal conduction is affected by system size. The reasons are increased phonon scattering and changes in phonon group velocity. In this paper, the in-plane thermal resistivity of nanoscale silicon thin films is analyzed by molecular dynamics (MD) techniques. Modifications to the dispersion relation are calculated directly with MD methods at high temperature. The results indicate that the dispersion relation starts to change for very thin films, at around two nanometers. The reasons are band folding and phonon confinement. Thermal resistivity is analyzed by the direct non-equilibrium method, and the results are compared to kinetic theory with modified dispersion relations. Thermal resistivity is affected by both surface scattering and dispersion. Moreover, in thin films, the characteristic vibrational frequency decreases, which in standard anharmonic scattering models indicates a longer relaxation time and affects the resistivity. The results indicate that in very thin films, the resistivity becomes highly anisotropic due to differences in surface scattering. In two cases, surface scattering was found to be the most important mechanism for increasing thermal resistivity, while in one case, phonon confinement was found to increase resistivity more than surface scattering.     

形变非晶合金的力学和电学性能

用特制装置测量了Pd基、Cu基、Ni基和Fe基的十五种非晶合金在弹性和范性形变过程中的电阻相对变化ΔR/R。同时测定了某些非晶合金丝的密度D,电阻率ρ和比例极限强度σ_p。随面缩率ψ的变化。实验结果表明,在p—ε和ΔR/R-ε曲线上存在弹性、滞弹性和范性形变三个阶段。在第一、二阶段应力p和ΔR/R随应变ε线性增加。密度、电阻率和比例极限强度随ψ的变化是显著的,当ψ>3％后它们的变化很小。最后,讨论了非晶合金的范性流变机制。 关键词：     

Quantization of the diagonal resistance: density gradients and the empirical resistance rule in a 2D system

We have observed quantization of the diagonal resistance, R(xx), at the edges of several quantum Hall states. Each quantized R(xx) value is close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R(xy). Peaks in R(xx) occur at different positions in positive and negative magnetic fields. Practically all R(xx) features can be explained quantitatively by a 1%/cm electron density gradient. Therefore, R(xx) is determined by R(xy) and unrelated to the diagonal resistivity rho(xx). Our findings throw an unexpected light on the empirical resistivity rule for 2D systems.     

Melting curve of silicon to 15 GPa determined by two-dimensional angle-dispersive diffraction using a Kawai-type apparatus with X-ray transparent sintered diamond anvils

The melting curve of silicon has been determined up to 15 GPa using a miniaturized Kawai-type apparatus with second-stage cubic anvils made of X-ray transparent sintered diamond. Our results are in good agreement with the melting curve determined by electrical resistivity measurements [V.V. Brazhkin, A.G. Lyapin, S.V. Popova, R.N. Voloshin, Nonequilibrium phase transitions and amorphization in Si, Si/GaAs, Ge, and Ge/GaSb at the decompression of high-pressure phases, Phys. Rev. B 51 (1995) 7549] up to the phase I (diamond structure)—phase II (β-tin structure)—liquid triple point. The triple point of phase XI (orthorhombic, Imma)—phase V (simple hexagonal)—liquid has been constrained to be at 14.4(4) GPa and 1010(5) K. These results demonstrate that the combination of X-ray transparent anvils and monochromatic diffraction with area detectors offers a reliable technique to detect melting at high pressures in the multianvil press.     

Conductance noise investigations with four arbitrarily shaped and placed electrodes

A general relation is derived for the spectral noise density of the voltage between two arbitrarily shaped and placed sensor electrodes on a conductor, when a constant current or voltage is applied to another pair of arbitrarily shaped and placed driver electrodes. The general relation is based on the sensitivity calculation in linear electrical networks. The relation is elaborated for conductivity fluctuations due to 1/f noise by using empirical 1/f noise relations. The influence of spot radii of the sensor electrodes on the noise is demonstrated. The theoretical results for 2 and 3-dimensional conductors are in agreement with our experimental results for carbon resistance sheets and on silicon and germanium in the resistivity range of 1Ωcm to 400Ωcm. The possibility of using the four-point probe for measuring the fluctuations in the resistivity has been demonstrated.     

非晶态TbFe2薄膜的磁性和电性

本文研究了TbFe₂非晶态薄膜的磁性和电性,测量了M_s(T)(77—800K),ρ(T)(4.2—400K)和穆斯堡尔谱(18K,400K),得到居里温度T_c～400K,电阻极小值温度T_min～360K,在T<360K范围内观察到温度系数为负的类Kondo效应,用Hesse和Window两种不同方法解出了室温穆斯堡尔谱的超精细场,得到了H=210kOe和H=25kOe两种分布,其中前一组给出了铁磁性,后一组可能与类Ko 关键词：