Eu和Dy掺杂BaAl12O19长余辉发光性能研究

采用高温固相法在不同的气氛条件下合成了BaAl12O19:Eu2+/Eu3+,Dy3+发光材料。X射线衍射(XRD)表明:实验得到了纯净的BaAl12O19相结构,Eu和Dy的掺入并未改变相结构。通过比较发现,Eu和Dy掺杂后导致XRD衍射峰向高角度有微小移动,显示Eu和Dy取代晶格中Ba后使面间距发生变化。发射光谱表明:在不同条件下合成的样品都存在Eu2+的4f65d1→4f7之间的宽带跃迁;空气气氛下合成的样品中Eu2+的宽带跃迁的存在表明样品中发生了自还原现象。Dy3+的加入使样品发光增强,同时样品具备了长余辉特性。还原气氛下合成的Eu和Dy共掺样品的余辉衰减和热释光研究表明所得样品具有良好的室温和高温长余辉性能。     

Luminescent and scintillation properties of YAG:Dy and YAG:Dy,Ce single crystalline films

The paper is devoted to investigation of the luminescent properties of Dy³⁺ and Dy³⁺-Ce³⁺ doped single crystalline films (SCF) grown by LPE method from PbO–B₂O₃ flux. We have found that the YAG:Dy and YAG:Dy,Ce SCFs possess bright cathodoluminescence in the visible range and good scintillation figure of merit. For this reason LPE grown YAG:Dy and YAG:Dy,Ce SCF are proposed for different applications, namely, as cathodoluminescence screens or screens for microimaging. The Dy³⁺ co-doping can be also proposed for improvement of the scintillation efficiency of the Ce³⁺ doped garnet compounds in the SCF form due to Dy³⁺→ Ce³⁺ energy transfer and removing the trap related centers in the above RT range.     

Photoluminescence characterization of Ce and Dy doped Li2CaGeO4 phosphors

Ce³⁺ and Dy³⁺ activated Li₂CaGeO₄ phosphors were prepared by a solid-state reaction method, and characterized by XRD (X-ray diffraction) and photoluminescence techniques. The characteristic emission bands of Dy³⁺ due to ⁴F_9/2→⁶H_15/2 (blue) and ⁴F_9/2→⁶H_13/2 (yellow) transitions were detected in the emission spectra of Li₂CaGeO₄:Dy³⁺. Ce³⁺ broad band emission was observed in Li₂CaGeO₄:Ce³⁺ phosphors at 372 and 400 nm due to 5d→4f transition when excited at 353 nm. Co-doping of Ce³⁺ enhanced the luminescence of Dy³⁺ significantly and concentration quenching occurs when Dy³⁺ is beyond 0.04 mol%. White-light with different hues can be realized by tuning Dy³⁺ concentration in the phosphors.     

不同形貌的LaPO4：Dy荧光粉的制备及其真空紫外激发下的发光性能

在水热法中通过改变磷源以及反应溶剂成功合成出了不同形貌的LaPO₄：Dy荧光粉,考察了真空紫外激发下不同形貌的LaPO₄：Dy荧光粉的发光性能.结果表明,由于采用的磷源不同,不同形貌的LaPO₄：Dy荧光粉的发光强度会受到影响;其次颗粒尺寸的大小也会影响发光强度.而形貌对Dy³⁺离子占据的格位的对称性影响不大,三种形貌的LaPO₄：Dy荧光粉的黄蓝比都在1—1.5之间.从激发光谱的对比中可知LaPO₄基质向Dy³⁺离子传递能量的效率不如向其他稀土离子,如Eu³⁺离子的效率高,同时在激发光谱中还观察到了较强的Dy³⁺离子的f-d跃迁激发峰. 关键词： 3+')" href="#">Dy³⁺ 真空紫外 发光     

Photoluminescence investigations of cubic boron nitride doped with neodymium during high-pressure synthesis

Micropowders of cubic boron nitride doped with neodymium are prepared under high-pressure and high-temperature conditions. The phase composition of the micropowders is studied using X-ray diffractometry and X-ray fluorescence analysis. The photoluminescence, photoluminescence excitation spectra, and the life-time of the ⁴ F _3/2 excited state of Nd ions introduced into cubic boron nitride are investigated. In photoluminescence spectra of the micropowders, structured bands are recorded in the range of the ⁴ F _3/2 → ⁴ I _9/2 and ⁴ F _3/2 → ⁴ I _11/2 electronic transitions. A higher intensity of the first structured band indicates that the corresponding photoluminescence in cubic boron nitride doped with neodymium is excited by the “three-level scheme.” It is demonstrated that an increase in the concentration of the neodymium compound in the growth batch leads to the formation of two luminescence centers Nd1 and Nd2 formed by neodymium ions located in different low-symmetry crystal fields in the micropowders. This is confirmed by X-ray diffraction investigations and the study of the photoluminescence decay curves. The ⁴ F _3/2 short-lived state is assigned to the Nd ions forming the Nd1 centers, and the long-lived state is attributed to the Nd ions forming the Nd2 centers.     

Magnetic properties of CoFeB alloys doped with Dy and Pr

Powders of the ferrimagnetic alloy CoFeBDyPr have been synthesized by the gas atomization method. Annealing of the samples at 900°C leads to the recrystallization of the amorphous phase into the crystalline phase (Pr,Dy)₂Fe₇Co₇B, which changes the magnetic properties of the alloy (the coercive force decreases, the shape of the magnetic hysteresis loop changes, etc.). The temperature dependences of the remanent magnetization and Mössbauer spectra depend on the size of particles. This indicates the contribution from subsurface magnetic states of the phase of different chemical composition, which is identified by X-ray photoelectron spectroscopy in particles with sizes of less than 10 μm. A weakening of the dipole-dipole interaction between particles in the sample, where they are diluted in the solid organic matrix (eicosane), leads to a change in the shape of the hysteresis loop. The elimination of the mechanical mobility of particles in eicosane significantly increases (to 2.5 times) the coercive force.     

Electronic properties of graphene nanoribbon doped by boron/nitrogen pair: a first-principles study

By using the first-principles calculations, the electronic properties of graphene nanoribbon (GNR) doped by boron/nitrogen (B/N) bonded pair are investigated. It is found that B/N bonded pair tends to be doped at the edges of GNR and B/N pair doping in GNR is easier to carry out than single B doping and unbonded B/N co-doping in GNR. The electronic structure of GNR doped by B/N pair is very sensitive to doping site besides the ribbon width and chirality. Moreover, B/N pair doping can selectively adjust the energy gap of armchair GNR and can induce the semimetal-semiconductor transmission for zigzag GNR. This fact may lead to a possible method for energy band engineering of GNRs and benefit the design of graphene electronic device.     

Photoluminescence investigations of Li2SiO3:Ln (Ln=Er3+, Eu3+, Dy3+, Sm3+) phosphors

In this study, we report a comprehensive structural and photoluminescence (PL) study on lithium metasilicate (Li₂SiO₃) phosphor ceramics doped with four rare earth (RE) ions. X-ray diffraction (XRD) patterns show a dominant phase, characteristic of the orthorhombic structure Li₂SiO₃ compound and the presence of dopants has no effect on the basic crystal structure of the material. The first excited state Er³⁺ luminescence at 1.54 μm arises from a sharp atomic-like radiative transition between the ⁴I_13/2 state and the ⁴I_15/2 state (ground level) under a 532 nm line of an Ar ion laser excitation. Sm doped samples showed Sm³⁺ emission characteristics corresponding to the some ⁴G_5/2→⁶H_j (j=5/2,9/2,11/2) transitions indicating a strong crystal-field effect. PL spectra of Eu doped material exhibited peaks corresponding to the ⁵D₀→⁷F_j (j=0,1,2,3 and 4) transitions under 405 nm excitation. The dominant red color emission at 612 nm from the hypersensitive (⁵D₀→⁷F₂) transition of Eu³⁺ indicates the inversion antisymmetry crystal field around Eu³⁺ ion, which is favorable to improve the red color purity. Dy doped samples showed the Dy³⁺ emission characteristic due to the ⁴F_9/2→⁶H_13/2 transition. Their relative intensity ratios also suggested the presence of a symmetric environment around the metal ion. We suggest that lithium metasilicate has enough potential candidates to be a phosphor material.     

Solvothermal synthesis and luminescent properties of YAG:Tb nano-sized phosphors

Nano-sized Tb-doped YAG phosphor particles were synthesized by a mixed solvo-thermal method using stoichiometric amounts of inorganic aluminum and yttrium salts. The formation of YAG:Tb was investigated by means of XRD and IR spectra. The pure crystalline-phase YAG was prepared under moderate synthesis conditions (300 °C and 10 MPa), indicating that ethanol partly replaces water as the solvent, thus favoring the formation of YAG. TEM images showed that YAG:Tb phosphor particles sintered at 300 °C were basically of spherical shape, with good dispersion about a particle size of around 80 nm. The crystalline YAG:Tb showed green emission with ⁵D₄−⁷F₆ (544 nm) as the most prominent group. The PL intensity and crystallinity of YAG:Tb phosphors increases with increasing synthesis temperature, and reaches maximum brightness at 300 °C, which is lower than that exhibited by a commercial product.     

Structures of Pt clusters on graphene doped with nitrogen, boron, and silicon: a theoretical study

The structures of Pt clusters on nitrogen-,boron-,silicon-doped graphenes are theoretically studied using densityfunctional theory.These dopants(nitrogen,boron and silicon) each do not induce a local curvature in the graphene and the doped graphenes all retain their planar form.The formation energy of the silicon-graphene system is lower than those of the nitrogen-,boron-doped graphenes,indicating that the silicon atom is easier to incorporate into the graphene.All the substitutional impurities enhance the interaction between the Pt atom and the graphene.The adsorption energy of a Pt adsorbed on the silicon-doped graphene is much higher than those on the nitrogen-and boron-doped graphenes.The doped silicon atom can provide more charges to enhance the Pt-graphene interaction and the formation of Pt clusters each with a large size.The stable structures of Pt clusters on the doped-graphenes are dimeric,triangle and tetrahedron with the increase of the Pt coverage.Of all the studied structures,the tetrahedron is the most stable cluster which has the least influence on the planar surface of doped-graphene.     

Electronic properties of boron and nitrogen doped graphene nanoribbons and its application for graphene electronics

On the basis of density functional theory calculations, we have systematically investigated the electronic properties of armchair-edge graphene nanoribbons (GNRs) doped with boron (B) and nitrogen (N) atoms. B (N) atoms could effectively introduce holes (electrons) to GNRs and the system exhibits p- (n-) type semiconducting behavior after B (N) doping. According to the electronic structure calculations, Z-shape GNR-based field effect transistors (FETs) is constructed by selective doping with B or N atoms. Using first-principles quantum transport calculations, we demonstrate that the B-doped p-type GNR-FETs can exhibit high levels of performance, with high ON/OFF ratios and low subthreshold swing. Furthermore, the performance parameters of GNR-FETs could be controlled by the p-type semiconducting channel length.     

Photoluminescence of SrS: Cu phosphors

Results of the investigation on the spectral characteristics of PL of SrS:Cu phosphors are presented. Probable emitters for the three observed bands, viz. 4710 Å, 5200 Å and 5480 Å, have been suggested.     

Photoluminescence of LiNbO3 crystals doped with Er3+ and Yb3+ ions

Results of cooperative phenomena investigations in the impurity subsystem of lithium niobate crystals doped with Er³⁺ and co-doped with Yb³⁺ impurity ions under continuous wave and pulsed excitation at 975 nm and 1064 nm wavelengths are presented. Dependences of some spectroscopic characteristics on the intensity of laser pumping are studied. Based on the pair centers model the analysis of the cooperative luminescence behavior in LiNbO₃:Yb³⁺+Er³⁺ crystals is performed.     

Luminescence studies on lanthanide ions (Eu, Dy and Tb) doped YAG:Ce nano-phosphors

Yttrium aluminum garnet nanoparticles both undoped and doped with lanthanide ions (Ce³⁺, Eu³⁺, Dy³⁺ and Tb³⁺) having average size around 30 (±3 nm) nm were prepared by glycine nitrate combustion method followed by annealing at a relatively low temperature of 800 °C. Increase in the annealing temperature has been found to improve the luminescence intensity and for 1200 °C heated samples there exists strong energy transfer from Tb³⁺ to Ce³⁺ ions in YAG:Ce(2%),Tb(2%) nanoparticles as revealed by luminescence studies. Co-doping the YAG:Ce nanoparticles with Eu³⁺ results in significant decrease in the emission intensity of both Ce³⁺ and Eu³⁺ ions and this has been attributed to the oxidation of Ce³⁺ to Ce⁴⁺ and reduction of Eu³⁺ to Eu²⁺ ions. Dy³⁺ co-doping did not have any effect on the Ce³⁺ emission as there is no energy transfer between Dy³⁺ and Ce³⁺ ions.     

Photoluminescence of Eu single doped and Eu/Dy codoped Sr2Al2SiO7 phosphors with long persistence

This paper reports the preparation of long persistent Sr₂Al₂SiO₇:Eu²⁺ and Sr₂Al₂SiO₇:Eu²⁺, Dy³⁺ phosphors and the comparison of their photoluminescent properties. The silicate phosphors prepared by solid-state reaction routine showed a broad blue emission peaking at 484 nm when activated by UV illumination. Such a bluish-green emission can be attributed to the intrinsic 4f-5d transitions of Eu²⁺. After the UV source was switched off, long persistent phosphorescence could be observed by naked eyes for both samples in darkness. Afterglow measurements revealed that Eu/Dy codoped phosphor possesses better afterglow properties than the Eu single doped one, since the maximum lifetime (τ_max=99 s) of the photons calculated from the decay profile is much larger than that of the Eu single doped phosphor (τ_max=82 s). TSL results suggested that the difference in afterglow properties was caused by the difference in the electron traps within the crystal lattice. For Eu/Dy codoped phosphor, the doping of Dy ions produced electron traps with trap depth of 0.52 eV, which is suitable and therefore leads to good persistence. However, in the case of Eu single doped phosphor, the trap depth is 0.88 eV, which is really too deep an energy barrier to overcome, and therefore a poor persistence was observed in the experiment.     

Eu掺杂Si纳米线的光致发光特性

利用Si(111)衬底, 以Au-Al为金属催化剂, 基于固-液-固生长机理, 在温度为1100℃, N₂气流量为1.5 L/min、生长时间为30–90 min等工艺条件下, 制备了直径约为100 nm、长度为数微米的高密度、均匀分布、大面积的Si纳米线(～10¹⁰ cm^-2). 对Si纳米线进行了Eu掺杂, 实验研究了不同长度的Si纳米线以及不同掺杂温度、掺杂时间等工艺参数对Eu离子红光发射的影响, 利用扫描电子显微镜和X射线衍射仪对Si纳米线表面形貌和Eu掺杂后Si纳米线的结晶取向进行了测量和表征; 室温下利用Hitachi F-4600型荧光分光光度计对样品的激发光谱和发射光谱进行了测试和分析. 结果表明: 在Si纳米线生长时间为30 min、掺杂温度为1000℃、 最佳激发波长为395 nm时, 样品最强荧光波长为619 nm (⁵D₀→⁷F₂); 同时, 还出现了576 nm (⁵D₀→⁷F₀), 596 nm (⁵D₀→⁷F₁), 658 nm (⁵D₀→⁷F₃)和708 nm (⁵D₀→⁷F₄)四条谱带.     

Electronic properties of single-crystal diamonds heavily doped with boron

Single-crystal diamonds with characteristic sizes of 2–7 mm doped with boron in the concentration range 10¹⁹–10²⁰ cm^?3 have been grown by the temperature gradient method at high static pressures. The temperature dependence of the resistance R of the synthesized single crystals has been measured in the range 0.5 K < T < 297 K. An activated dependence R(T) with an activation energy of about 50 meV is observed in the range from room temperature to T ≈ 200 K. At temperatures below approximately 50 K, the temperature dependence of the conductivity for heavily doped crystals is proportional to T ^1/2, which is characteristic of degenerate semiconductors with a high number of defects.     

Optical properties of doubly doped ZnO phosphors co-activated with lithium ions

Time-resolved laser-induced optical properties of didymium (a mixture of neodymium and praseodymium) doped zinc oxide phosphors have been studied using nitrogen laser as an excitation source at room as well as at liquid nitrogen temperatures. A comparison of optical properties (oscillator strength and dipole-moment) at room temperature and liquid nitrogen temperature has been done and is reported in this article. It is found that oscillator strength and dipole-moment values for doped ZnO are increasing with decreasing temperature. The increasing trend of the optical parameters obtained at liquid nitrogen temperature of the doped phosphors indicates increase in efficiency.     

Magnetism of single-walled silicon carbide nanotubes doped by boron,nitrogen and oxygen

We calculated, using spin polarized density functional theory, the electronic properties of zigzag (10,0) and armchair (6,6) semiconductor silicon carbide nanotubes (SiCNTs) doped once at the time with boron, nitrogen, and oxygen. We have looked at the two possible scenarios where the guest atom X (B, N, O), replaces the silicon X_Si, or the carbon atom X_C, in the unit cell. We found that in the case of one atom B @ SiCNT replacing a carbon atom position annotated by B_C exhibits a magnetic moment of 1 μ_B/cell in both zigzag and armchair nanotubes. Also, B replacing Si, (B_Si), induce a magnetic moment of 0.46 μ_B/cell in the zigzag (10,0) but no magnetic moment in armchair (6,6). For N substitution; (N_C) and (N_Si) each case induce a magnetic moment of 1 μ_B/cell in armchair (6,6), while N_Si give rise to 0.75 μ_B/cell in zigzag (10,0) and no magnetic moment for N_C. In contrast the case of O_C and O_Si did not produce any net magnetic moment in both zigzag and armchair geometries.