Indistinguishable entangled photons generated by a light-emitting diode

A linear optical quantum computer relies on interference between photonic qubits for logic, and entanglement for near-deterministic operation. Here we measure the interference and entanglement properties of photons emitted by a quantum dot embedded within a light-emitting diode. We show that pairs of simultaneously generated photons are entangled, and indistinguishable from subsequently generated photons. We measure entanglement fidelity of 0.87 and two-photon-interference visibility of 0.60 ± 0.05. The visibility, limited by detector jitter, could be improved by optical cavity designs.     

Glareless light-emitting diode lighting tube

We develop a novel light bar waveguide design to produce a glareless light-emitting diode (LED) lighting tube. We design optimal parameters, such as the gap y between the tube and the reflective surface, the relative distance x between the lens and the LED, and so on. Using these parameters, we fabricate an illumination system consisting of LED light bulb installed at both ends of lighting tube. The lighting tube is shaped the same as a traditional fluorescent lighting tube in order to replace traditional lighting tubes without the modification of the lighting stand. The LED lighting tube is glareless to the observer from the side view.     

可调色红光有机电致发光器件

介绍了具有可调节发光光谱的高效红光有机发光二极管(OLED)器件,利用具有高三重态能量的9.9-螺二芴二苯基氧化磷(SPPO1)作为发光层的主体材料及空穴阻挡层,二(1-苯基异喹啉)(乙酰丙酮)合铱(III) (Ir(piq)2(acac))作为客体发光材料,在发光层内SPPO1的能量分别由福斯特和迪克斯特传递到Ir(piq)2(acac)的单重态和三重态从而发出红色磷光,通过调节磷光客体材料的比例得到最优器件结构,从而得到具有较好发光效率和发光亮度并可调节色纯的有机发光二极管器件。     

可调色红光有机电致发光器件

介绍了具有可调节发光光谱的高效红光有机发光二极管(OLED)器件,利用具有高三重态能量的9.9-螺二芴二苯基氧化磷(SPPO1)作为发光层的主体材料及空穴阻挡层,二(1-苯基异喹啉)(乙酰丙酮)合铱(III) (Ir(piq)2(acac))作为客体发光材料,在发光层内SPPO1的能量分别由福斯特和迪克斯特传递到Ir(piq)2(acac)的单重态和三重态从而发出红色磷光,通过调节磷光客体材料的比例得到最优器件结构,从而得到具有较好发光效率和发光亮度并可调节色纯的有机发光二极管器件。     

2014年诺贝尔物理学奖给我们的启示

2014年诺贝尔物理学奖授予高效蓝色发光二极管,这是一项具有重大经济和社会效益的技术发明。文章讨论该届诺贝尔物理学奖及获奖人的经历给我们的启示,包括三位诺贝尔奖获得者的洞察力以及持续多年围绕一个重大问题攻关的精神;结合中国科技界现状,本文将着重探讨评价重大科研成果的标准,以及日本科研模式和企业文化中可供国内科技工作者借鉴的积极因素。     

Atmospheric ozone concentration measurement by UV light-emitting diode radiation absorption

The concentration of ozone produced in the atmosphere under mercury lamp light is measured using an UV light-emitting diode by the absorption spectrum in the range of 260–270 nm. The absorbance and ozone concentration measurement sensitivity is k = 8 · 10^?7 cm^?1 and ～3 ppbv, respectively.     

Phosphor-converted light-emitting diode based on ZnO-based heterojunction

A phosphor-converted light-emitting diode (LED) was realized by coating BaMg₂Al₁₆O₂₇:Eu²⁺·Mn²⁺ and (SrCaPO₄)·B₂O₃:Eu²⁺·Na⁺ phosphors onto an n-ZnO/i-MgO/p-GaN heterojunction diode. Two emission bands at around 450 and 520 nm were observed in the phosphor-converted LED under the injection of continuous current. By analyzing the optical properties of the heterojunction diode and phosphors, it is concluded that the emission at 450 nm comes from (SrCaPO₄)·B₂O₃:Eu²⁺·Na⁺ phosphor, while the one at 520 nm comes from BaMg₂Al₁₆O₂₇:Eu²⁺·Mn²⁺ phosphor under the excitation of the light emitted from the n-ZnO/i-MgO/p-GaN heterojunction diode. The results reported in this paper may provide a route to ZnO-based phosphor-converted LEDs for future lighting or displaying purpose.     

The Monte-Carlo model of a light-emitting diode

The first complete Monte-Carlo model of a surface light-emitting diode is presented in this paper. In the model all important phenomena (including the two-dimensional diffusion of minority carriers before their recombination in the active region and the re-emission of radiation) are taken into account. The influence of various construction parameters on the external quantum efficiency of the homojunction GaAs diode is examined.     

具有新型双空穴注入层的有机发光二极管

采用新型双空穴注入层N, N, N', N'-tetrakis(4-Methoxy-phenyl)benzidine/Copper phthalocyanine(MeO-TPD/CuPc)及器件结构:ITO/MeO-TPD(15 nm)/CuPc(15 nm)/ N, N'-Bis(naphthalen-1-yl)-N, N'-bis(phenyl)benzidine (NPB, 15 nm)/8-hydroxyquinoline (Alq₃, 50 nm)/LiF(1 nm)/Al(120 nm), 研制出高效有机发光二极管(器件D), 与其他器件(器件A, 没有空穴注入层的器件; 器件B, MeO-TPD单空穴注入层; 器件C, CuPc单空穴注入层)相比, 其性能得到明显改善. 器件D的起亮电压降至3.2 V, 比器件A, B, C的起亮电压分别降低了2, 0.3, 0.1 V. 器件D在10 V时, 其最大亮度为23893 cd/m², 最大功率效率为1.91 lm/W, 与器件A, B, C的最大功率效率相比, 分别提高了43% (1.34 lm/W), 22% (1.57 lm/W), 7% (1.79 lm/W). 性能改善的主要原因是由于空穴注入和传输性能得到了改善, 通过单空穴型器件的J-V 曲线对这一现象进行了分析. 关键词： 有机发光二极管 空穴注入层 功率效率 势垒     

Efficient red organic light-emitting diode sensitized by a phosphorescent Ir compound

The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq₃) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N′,C⁴) (acetyl acetonate) (Ir(C6)₂(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′ diamine (NPB) (40 nm)/Alq₃:DCJTB (0.7 wt%):Ir(C6)₂(acac) (0.3 wt%) (40 nm)/Alq₃ (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8±1) cd/A from 0.1 to 20,000 cd/m² and the Commission International d’Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6)₂(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.     

Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by taking advantage of an enhanced optical absorption in a highly-doped Si layer on the backside of the wafer. A simulation environment was developed to give information about optical crosstalk by incorporating the experimental optical constants of the materials constituting the crosstalk-reduction layer. It is shown that the indirect optical crosstalk is greatly reduced by increasing the thickness and doping of the layer. A crosstalk reduction of 5 orders of magnitude is gained with addition of 1-μm-thick \(\hbox {PureB}/\upalpha \hbox {-Si}\) stack for the array processed on a p-type substrate, while the same reduction is achieved with a 1-μm-thick highly-doped Si layer (As, \(1.1\times 10^{20}\, \hbox {cm}^{-3}\)) for an array processed on an n-type substrate.     

Fast single-photon avalanche diode arrays for laser Raman spectroscopy

We incorporate newly developed solid-state detector technology into time-resolved laser Raman spectroscopy, demonstrating the ability to distinguish spectra from Raman and fluorescence processes. As a proof of concept, we show fluorescence rejection on highly fluorescent mineral samples willemite and spodumene using a 128×128 single-photon avalanche diode (SPAD) array with a measured photon detection efficiency of 5%. The sensitivity achieved in this new instrument architecture is comparable to the sensitivity of a technically more complicated system using a traditional photocathode-based imager. By increasing the SPAD active area and improving coupling efficiency, we expect further improvements in sensitivity by over an order of magnitude. We discuss the relevance of these results to in situ planetary instruments, where size, weight, power, and radiation hardness are of prime concern. The potential large-scale manufacturability of silicon SPAD arrays makes them prime candidates for future portable and in situ Raman instruments spanning numerous applications where fluorescence interference is problematic.     

Thermal diffusivity of light-emitting diode packaging material determined by photoacoustic piezoelectric technique

Thermal property is one of the most important properties of light-emitting diode (LED).Thermal property of LED packaging material determines the heat dissipations of the phosphor and the chip surface,accordingly having an influence on the light-emitting efficiency and the life-span of the device.In this paper,photoacoustic piezoelectric (PAPE) technique has been employed to investigate the thermal properties of polyvinyl alcohol (PVA) and silicon dioxide,which are the new and the traditional packaging materials in white LED,respectively.Firstly,the theory of PAPE technique has been developed for two-layer model in order to investigate soft materials;secondly,the experimental system has been set up and adjusted by measuring the reference sample;thirdly,the thermal diffusivities of PVA and silicon dioxide are measured and analysed.The experimental results show that PVA has a higher thermal diffusivity than silicon dioxide and is a better packaging material in the sense of thermal diffusivity for white LED.     

Enhancement of extraction efficiency by metallic photonic crystal embedding in light-emitting diode

The bandgap effect of photonic crystals (PCs) and the effect of grating diffraction can be used to improve the extraction efficiency of light from the light-emitting diode (LED). The transmission of light at certain wavelength through periodic sub-wavelength hole arrays in metal films is extraordinary, surface plasmon (SP) effects effectively. In this letter, silver metallic photonic crystals with square lattice of cylinder unit cells are fabricated in GaN layer of GaN-based blue LED. We use the finite-difference time-domain (FDTD) method to investigate the optical transmission, the results show that the light extraction efficiency is enhanced by more than four times. Then we use the surface plasmon dispersion relation to analyze the mechanism of antireflection.     

Numerical study of light-emitting diode with injected current modulated by designed electrode

Numerical model and procedure are developed to study the output optical performance of light-emitting diode (LED) in which injected current is spatially modulated by mesh-like top metal electrode. The mesh strips have rectangular crossection as in realistic LEDs. The finite element method is applied to obtain three-dimensional distributions of electric potential which are incorporated in the equations for total output power. The numerical procedure is applied to evaluate LED’s total output optical power at different geometric parameters of the electrode: the mesh pitch, the width, and the height of the top mesh-like electrodes. Modeling results demonstrate the effect of mesh pitch variation on the output optical power. In particular, at a certain value of the mesh pitch maximum total output optical power is revealed. The presented approach can be used in the optimization of the LEDs with designed metal electrodes.     

Flexible Ag electrode for quantum dot light-emitting diode

In this paper, we have fabricated quantum dot light-emitting diode (QD-LED) based on silver (Ag) electrode. The QD-LED with Ag electrode is demonstrated with decreased leakage current, improved luminous efficiency, low turn-on voltages, and saturated emission exhibiting the Commission Internationale de l’Enclairage coordinates of (0.59, 0.40). Meanwhile, compared to the QD-LED with indium tin oxide-coated polyethylene terephthalate electrode, the electroluminescence intensity was enhanced twice for QD-LED based on Ag electrode, and turn-on voltage was reduced to 4.7 V, which was attributed to the higher conductivity and better transmission of Ag electrode.     

掺杂GaN间隔层对双波长发光二极管光谱调控作用的研究

采用软件理论分析的方法对p型及n型掺杂的GaN间隔层在InGaN/GaN多量子阱双波长发光二极管中对光谱调控作用进行模拟分析.分析结果表明,掺杂的GaN间隔层的引入,可以有效地控制各阱中的电子或空穴浓度,很好地解决了双波长发光二极管中两种阱发光强度不均的问题,并且通过控制阻挡层的厚度,可以调控两种阱中的载流子浓度,从而调控发光峰的相对强度.这些可以归因于掺杂GaN间隔层对电子或空穴的阻挡作用. 关键词： GaN 间隔层 数值模拟 双波长发光二极管     

Lensless digital holographic microscope with light-emitting diode illumination

We demonstrate the operation of a digital in-line microscope with LED illumination. We show with a practical example that, for typical setups, the limited temporal coherence and the spatial incoherence of the source do not affect the resolving power of the system. On the contrary, important advantages are obtained in terms of signal-to-noise ratio and alignment simplification.     

Aluminum nitride substrates for ultraviolet light-emitting diode structures

Currently, wafers of aluminum nitride cut from bulk aluminum nitride crystals (AlN) grown by sublimation are considered promising substrates for obtaining light-emitting diode structures based on nitrides of the third group. In this study, the structural characteristics and electrical properties of AlN, as a prospective substrate material for light-emitting diode heterostructures based on AlGaN/GaN, were investigated. The substrate working surface ((0001) plane, Al-polar) was specifically prepared for epitaxial growth using chemical-mechanical polishing. The surface roughness (“epi-ready”), as estimated by atomic force microscopy, did not exceed 0.3 nm.     

A light-emitting diode fabricated from horse-heart cytochrome c

We have fabricated a light-emitting diode from horse-heart cytochrome c and measured the electro-luminescence (EL) spectra. The spectra exhibit broad peaks around 530 and 690 nm, and a weak shoulder around 410 nm. The EL spectra are completely different from the photo-luminescence spectra previously reported. The appearance of the 690 nm emission band suggests the charge-transfer between the iron and the axial methionine ligand plays a crucial role in the electrical conduction in the cytochrome c film.