Electron transport in manganite bicrystal junctions

The transport and magnetic properties of junctions created in La_0.67Sr_0.33MnO₃ thin films epitaxially grown on substrates with a bicrystal boundary have been investigated. In tilted neodymium gallate bicrystal substrates, the NdGaO₃(110) planes are inclined at angles of 12° and 38°. The temperature dependences of the electrical resistance, magnetoresistance, and differential conductance of the junctions at different voltages have been measured and analyzed. It has been found that the magnetoresistance and electrical resistance of the junction significantly increase with an increase in the misorientation angle, even though the misorientation of the easy magnetization axes remains nearly unchanged. The ratio of the spin-dependent and spin-independent contributions to the conductance of the bicrystal junction increases by almost an order of magnitude with an increase in the misorientation angle from 12° to 38°. The magnetoresistance of the junction increases with decreasing temperature, which is most likely associated with an increase of the magnetic polarization of the electrons. It has been shown that, at low (liquid-helium) temperatures, the conductance depends on the voltage V according to the law V ^1/2, which indicates the dominant contribution from the electron-electron interaction to the electrical resistance of the junction. An increase in the temperature leads to a decrease in this contribution and an increase in the contribution proportional to V ^3/2, which is characteristic of the mechanism involving inelastic spin scattering by surface antiferromagnetic magnons.     

Features of magnetic and magnetoelectric properties of rare-earth multiferroic PrFe3(BO3)4 with the singlet ground state

The features of magnetization of rare-earth multiferroic PrFe₃(BO₃)₄ with the singlet ground state have been investigated theoretically. The magnetic anisotropy of the crystal has been studied. The temperature dependences of anisotropy constants have been calculated. The phase H-T diagram has been constructed. The dependences of the behavior of magnetization vectors of magnetic sublattices on the external magnetic field have been obtained. The magnetoelectric effect has been investigated, and the dependences of polarization on the temperature and field have been found for its various orientations. The theoretical data have been compared with the experimental data and their good agreement has been established.     

Dielectric properties of porous aluminum and silicon oxides with inclusions of triglycine sulfate and its modified analogs

This paper reports on an investigation of the temperature dependences of the capacitance and conductance of composite materials prepared by incorporating the ferroelectric TGS and its analogs—TGS with addition of L,α-alanine and chromium—into porous Al₂O₃ and SiO₂ matrices. It has been established that conduction of the structures under study involves charge transport predominantly through the ferroelectric embedded in the porous matrix. A mechanism is proposed to account for the displacement of the phase transition temperature of the ferroelectric inclusion under “restricted geometry” conditions, which is driven by the difference between the thermal expansion coefficients of the porous matrix and the embedded ferroelectric.     

Universal Frequency Dependence of the Hopping AC Conductance in <Emphasis Type="Italic">p</Emphasis>-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime

The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and microwave methods. Measurements have been made in the p-GeSi/Ge/GeSi structures with quantum wells in a wide frequency range (30–1200 MHz). The experimental frequency dependences of the real part of ac conductance σ₁ have been interpreted on the basis of the model presuming hops between localized electronic states belonging to isolated clusters. At high frequencies, dominating clusters are pairs of close states; upon a decrease in frequency, large clusters that merge into an infinite percolation cluster as the frequency tends to zero become important. In this case, the frequency dependences of the ac conductance can be represented by a universal curve. The scaling parameters and their magnetic-field dependence have been determined.     

Anomalies of the electrical conductance of water near 4°C

The dependences of the electrical conductance of water (G) on temperature T upon quasi-static heating from 0 to 7°C with a rate of 0.1°C per 200?C250 s have been obtained by the capacitance method in the sound frequency ranges. Anomalies have been found in the dependences G(T) near 4°C for water containing charge carriers of different types and concentrations.     

The proton optical-model potential near the Coulomb barrier

Proton elastic scattering data from ¹⁹⁷Au, ²⁰⁸Pb and ²⁰⁹Bi at energies near the Coulomb barrier are analyzed. The energy dependences of the real volume and imaginary surface-derivative potential depths V_R and W_SF of a local optical-model potential with fixed geometric parameters are found to be much more rapid than at higher energies. The strong energy dependence of V_Rnear the Coulomb barrier is explained in terms of the non-locality of the nucleon-nucleus interaction.     

Influence of the humidity on dielectric characteristics of porous aluminum oxide with inclusions of triglycine sulfate

The temperature dependences of the capacitance and conductance measured for samples of porous aluminum oxide films with inclusions of triglycine sulfate have been investigated. The character of these dependences obtained for the films treated in a humid atmosphere differs from that of the corresponding dependences measured for the initial porous Al₂O₃ matrix, bulk triglycine sulfate, and dried Al₂O₃ + triglycine sulfate composite. The observed changes are determined by the influence of the water adsorbed on the surface of the film and the water structured in pores of the composite.     

Magnetic and electrical properties of bismuth cobaltite Bi24(CoBi)O40 with charge ordering

The compound Bi₂₄(CoBi)O₄₀ has been synthesized using the solid-phase reaction method. The temperature and field dependences of the magnetic moment in the temperature range 4 K < T < 300 K and the temperature dependences of the EPR line width and g-factor at temperatures 80 K < T < 300 K have been investigated. The electrical resistivity and thermoelectric power have been measured in the temperature range 100 K < T < 1000 K. The activation energy has been determined and the crossover of the thermoelectric power from the phonon mechanism to the electron mechanism with variations in the temperature has been observed. The thermal expansion coefficient of the samples has been measured in the temperature range 300 K < T < 1000 K and the qualitative agreement with the temperature behavior of the electrical resistivity has been achieved. The electrical and structural properties of the compound have been explained in the framework of the model of the electronic-structure transition with inclusion of the exchange and Coulomb interactions between electrons and the electron-phonon interaction.     

Elastic and thermal properties of Zr z Nb1 − z C x N y solid solutions

The temperature and concentration dependences of the elastic moduli and the thermal linear expansion coefficient of Zr _z Nb_{1 ? z} C _x N _y solid solutions containing from 3 to 8 at % of structural vacancies in a nonmetallic sublattice have been found. The temperature dependences of the Debye temperature Θ_D(T) have been calculated using the elastic data and the data on the heat capacity. It has been shown, using carbide NbC_0.97 as an example, that the Θ_D(T) dependences found from the elastic properties and the heat capacity coincide in the temperature range ～220–300 K. By analogy with the niobium carbide, the heat capacity C _p (300) of Zr _z Nb_{1 ? z} C _x N _y solid solutions of various compositions is calculated based on the values of Θ_D(300) determined from the elastic properties.     

Coherent transmission of nodal Dirac fermions through a graphene-based superconducting double barrier junction

Transport characteristics of relativistic electrons through graphene-based d-wave superconducting double barrier junction and ferromagnet/d-wave superconductor/normal metal double junction have been investigated based on the Dirac–Bogoliubov–de Gennes equation. We have first presented the results of superconducting double barrier junction. In the subgap regime, both the crossed Andreev and nonlocal tunneling conductance all oscillate with the bias voltage due to the formation of Andreev bound states in the normal metal region. Moreover, the critical voltage beyond which the crossed Andreev conductance becomes to zero decreases with increasing value of superconducting pair potential α. In the presence of the ferromagnetism, the MR through graphene-based ferromagnet/ d-wave superconductor/normal metal double junction has been investigated. It is shown that the MR increases from exchange splitting h ₀=0 to h ₀=E _F (Fermi energy), and then it goes down. At h ₀=E _F, MR reaches its maximum 100. In contrast to the case of a single superconducting barrier, Andreev bound states also manifest itself in the zero bias MR, which result in a series of peaks except the maximum one at h ₀=E _F. Besides, the resonance peak of the MR can appear at certain bias voltage and structure parameter. Those phenomena mean that the coherent transmission can be tuned by superconducting pair potential, structure parameter, and external bias voltage, which benefits the spin-polarized electron device based on the graphene materials.     

Photoelectron injection at metal-semiconductor interfaces

A modelling of the photoinjection process is developed which permits fitting of the spectral photoresponse of Schottky barriers including the electric field dependence of barrier height and photoresponse by means of two adjustable parameters: the zero field barrier qφ_BO and λ₀ the zero temperature mean free path for optical phonon scattering of high energy electrons. The model assumes an image force potential barrier with Thomas-Fermi screening in the metal. Effects of optical phonon scattering and quantum mechanical transmission are convoluted on the Fowler photoelectron supply function. The effects of phonon scattering are frequently large because the ranges in energies associated with the transverse momentum and normal momentum are approximately the amount by which the quantum energy hv exceeds the barrier energy qφ_B. At high fields, quantum mechanical tunneling dominates the response when hv < qφ_B. At low fields, phonon assisted transmission is appreciable for the same quantum energy range. The calculation of the collection probability includes effects of multiple scattering even for electrons that do not lie initially within the cone of acceptance at the barrier maximum. An approach that considers the probability of collection the same as that of reaching the potential maximum without scattering is found to be acceptable only at high fields. Experimental results are reported from oxide-passivated epitaxial Pt_xSi-〈111〉 n-type Si Schottky barrier diodes with annular Schottky barrier guard rings measured at temperatures of 90 and 298 K for an electric field range from 5 × 10³ to 9 × 10⁴$\text{V}\text{cm}$. The field, spectral and temperature dependences of the photoresponse data are in excellent agreement with theoretical predictions with λ₀ = 110 Å at both 90 and 298 K. The zero field barrier height obtained from fitting photoresponse curves at a number of electric fields is also in excellent agreement with I-V and C-V measurements.     

Superconducting properties of tin embedded in nanometer-sized pores of glass

The electrical resistance of tin embedded from a melt in porous glasses with an average pore diameter of ??7 nm has been investigated at low temperatures in magnetic fields up to 2 T. The temperatures of the transition to the superconducting state for nanocrystalline tin have been determined in magnetic fields of 0, 0.3, 0.5, 1.0, 1.5, and 2.0 T. It has been found that the temperature and magnetic-field dependences of the electrical resistance of the nanocomposite under investigation exhibit two transitions to the superconducting state. The nature of the double superconducting transitions has been discussed. The H _c -T _c phase diagram has been constructed using the entire set of data on the magnetic-field and temperature dependences of the electrical resistance of nanostructured tin. This phase diagram indicates that the upper critical magnetic field H _c2(0) for nanostructured tin is almost two orders of magnitude higher than the corresponding field for bulk tin.     

Effect of ionizing radiation on the dielectric characteristics of TlInS2 and TlGaS2 single crystals

The dependences of the permittivity and electrical conductivity of TlInS₂ and TlGaS₂ single crystals on the temperature and electron beam irradiation dose have been studied. It has been established that, as the electron irradiation dose increases, the electrical conductivity σ significantly increases, whereas the permittivity ? decreases over the entire temperature range covered (80–320 K). It has been shown that anomalies in the form of maxima in the temperature dependences σ(T) and ?(T) are observed in the regions characteristic of phase transitions in TlInS₂. Irradiation of the TlInS₂ and TlGaS₂ crystals with electrons to doses of 10¹⁵ and 10¹⁶ cm^?2 does not affect their phase transition temperatures. The dispersion curves of the permittivity ? of the TlGaS₂ crystal have been constructed.     

Influence of the form of structure factor on the mobility of nondegenerate two-dimensional electrons

The temperature dependences of the mobility of nondegenerate two-dimensional electrons in scattering by a correlated distribution of impurity ions in Al _x Ga_{1 ? x} As/GaAs heterostructures have been investigated. The cases where the influence of the first maximum of the structure factor on the scattering of electrons begins to dominate with increasing temperature have been considered. It has been found that the mobility of two-dimensional electrons decreases with increasing correlations in the spatial distribution of impurity ions. The influence exerted by the correlations and the width of the spacer layer on this effect has been analyzed.     

Density and thermodynamics of hydrogen adsorbed on the surface of single-walled carbon nanotubes

A method is proposed for calculating the adsorption of hydrogen in single-walled carbon nanotubes. This method involves solving the Schrödinger equation for a particle (hydrogen molecule) moving in a potential generated by the surrounding hydrogen molecules and atoms forming the wall of the carbon nanotube. The interaction potential for hydrogen molecules is taken in the form of the Silvera-Goldman empirical potential, which adequately describes the experimental data on the interaction between H₂ molecules (including the van der Waals interaction). The interaction of hydrogen molecules with carbon atoms is included in the calculation through the Lennard-Jones potential. The free energy at a nonzero temperature is calculated with allowance made for the phonon contribution, which, in turn, makes it possible to take into account the correlations in the mutual arrangement of the neighboring molecules. The dependences of the total energy, the free energy, and the Gibbs thermodynamic potential on the applied pressure P and temperature T are calculated for adsorbed hydrogen molecules. These dependences are obtained for the first time with due regard for the quantum effects. The pressure and temperature dependences of the hydrogen density m(P, T) are also constructed for the first time.     

The influence of the skin effect on FMR in MnFe ferrites

FMR experiments on the system Mn _x Fe_3?x O₄ have been performed at 7·8 and 15·2 (or 16) GHz in the temperature range 80–300 K. The temperature dependences of the linewidth, resonance field and lineshape have been studied on spherical samples with diameter 0·25–1 mm. It has been shown that the observed dependences from greater part reflect the decrease of the skin depth with increasing temperature and are connected with the influence of the skin effect. This mechanism is discussed in more detail. The maxima in theΔH vs.T plot are compared to similar ones predicted for an infinite slab. The behaviour of the resonance field and lineshape is shown to be essentially dependent on the position of the uniform mode frequency to the upper limit of the spin-wave manifold. An approximative method has been given for treating resonance in the surface layer of the spherical sample and the corresponding surface mode. This mode and a further mode similar to the Walker magnetostatical (3,1,1) mode have been observed at higher temperatures. It has been experimentally verified that they can coexist with the nearly uniform mode.     

Quantum modulation effect in a graphene-based magnetic tunnel junction

The electronic (quantum) transport in a NG/F_B/FG tunnel junction (where NG, F_B and FG are a normal graphene layer, a ferromagnetic barrier connected to a gate and a ferromagnetic graphene layer, respectively) is investigated. The motions of the electrons in the graphene layers are taken to be governed by the Dirac Equation. Parallel (P) and antiparallel alignment (AP) of the magnetizations in the barrier and in the ferromagnetic graphene are considered. Our work focuses on the oscillation of the electrical conductance (Gq), of the spin conductance (Gs) and of the tunneling magneto resistance (TMR) of this magnetic tunnel junction. We find that, the quantum modulation due to the effect of the exchange field in F_B will be seen in the plots the conductance and of the TMR as functions of the thickness of ferromagnetic barrier (L). The period of two multiplied sinusoidal terms of the modulation are seen to be controlled by varying the gate potential and the exchange field of the F_B layer. The phenomenon, a quantum beating, is built up with two oscillating spin conductance components which have different periods of oscillation related to the splitting of Dirac's energies in the F_B region. The amplitudes of oscillations of Gq, Gs and TMR are not seen to decrease as the thickness increases. The decaying behaviors seen in the conventional transport through an insulator do not appear.     

Structure and dielectric properties of Bi6 − x Sr x Ti2 − x Nb2 + x O18 (x = 0–2) solid solutions

The structural and electrophysical characteristics of a series of solid solutions of layered perovs-kite-like oxides Bi_{6 ? x} Sr _x Ti_{2 ? x} Nb_{2 + x} O₁₈ (x = 0, 0.25, 0.5, 1.0, 1.5, 2.0) have been studied. The temperature dependences of the relative permittivity ?/?₀(T) and dielectric loss tangent tanδ have been measured. The dependences of the maximum of the permittivity ?/?₀, Curie temperature T _C, lattice parameters, and the unit cell volume on x have been obtained. The structural parameter a, which corresponds to the polar direction, and the value of the orthorhombic distortion of the unit cell have been found to demonstrate noticeable negative deviations from the Vegard’s law. It has been established that the variations of the orthorhombic distortion correlate with the variations of the permittivity maximum; however, they do not markedly influence the Curie temperature that varies linearly over entire range of changes in x.     

Multiple andreev reflections spectroscopy of superconducting LiFeAs single crystals: Anisotropy and temperature behavior of the order parameters

The superconducting state of LiFeAs single crystals with the maximum critical temperature T _c ≈ 17 K in the 111 family has been studied in detail by multiple Andreev reflections (MAR) spectroscopy implemented by the break-junction technique. The three superconducting gaps, Δ_Γ = 5.1–6.5 meV, Δ_L = 3.8–4.8 meV, and Δ_S = 0.9–1.9 meV (at T ? T _c), as well as their temperature dependences, have been directly determined in a tunneling experiment with these samples. The anisotropy degrees of the order parameters in the k space have been estimated as <8, ～12, and ～20%, respectively. Andreev spectra have been fitted within the extended Kümmel-Gunsenheimer-Nikolsky model with allowance for anisotropy. The relative electron-boson coupling constants in LiFeAs have been determined by approximating the Δ(T) dependences by the system of the two-band Moskalenko and Suhl equations. It has been shown that the densities of states in bands forming Δ_Γ and Δ_L are approximately the same, intraband pairing dominates in this case, and the interband coupling constants are related as λ_ΓL ≈ λ_LΓ ? λ_SΓ, λ_SL.     

Structural studies of the P-T phase diagram of sodium niobate

The crystal structure of sodium niobate (NaNbO₃) has been investigated by energy-dispersive X-ray diffraction at high pressures (up to 4.3 GPa) in the temperature range 300–1050 K. At normal conditions, NaNbO₃ has an orthorhombic structure with Pbcm symmetry (antiferroelectric P phase). Upon heating, sodium niobate undergoes a series of consecutive transitions between structural modulated phases P-R-S-T(1)-T(2)-U; these transitions manifest themselves as anomalies in the temperature dependences of the positions and widths of diffraction peaks. Application of high pressure leads to a decrease in the temperatures of the structural transitions to the R, S, T(1), T(2), and U phases with different baric coefficients. A phase diagram for sodium niobate has been build in the pressure range 0–4.3 GPa and the temperature range 300–1050 K. The dependences of the unit-cell parameters and volume on pressure and temperature have been obtained. The bulk modulus and the volume coefficients of thermal expansion have been calculated for different structural modulated phases of sodium niobate. A phase transition (presumably, from the antiferroelectric orthorhombic P phase to the ferroelectric rhombohedral N phase) has been observed at high pressure (P = 1.6 GPa) and room temperature.