Theoretical study of indirect excitons’ lifetime in coupled AlGaN/GaN quantum wells in the presence of an electrostatic trap

The lifetime of electrostatically trapped indirect excitons in a field-effect structure based on coupled AlGaN/GaN quantum wells has been theoretically studied. Within the plane of a double quantum well, indirect excitons are trapped between the surfaces of the AlGaN/GaN heterostructures and a semitransparent metallic top gate. The trapping mechanism has been assumed to be a combination of the quantum confined Stark effect and local field enhancement. In order to study the trapped exciton lifetime, the binding energy of indirect excitons in coupled quantum wells is calculated by finite difference method in the presence of an electric field. Thus, the lifetime of trapped excitons is computed as a function of well width, AlGaN barrier width, the position of double quantum well in the device and applied voltage.     

在两个耦合的量子点和腔QED系统中的双模激子的压缩性质(英文)

本文研究了在两个耦合的量子点和腔QED系统中的双模激子的压缩性质.讨论了不同的初始光场对双模激子的正常压缩与和压缩的影响.计算表明,当初始态光场制备在相干态时,双模激子既不存在正常压缩,也不存在和压缩,这说明双模激子振辐的两个正交分量具有相同的量子涨落;然而,当初始腔场处于压缩真空态时,无论是正常压缩还是和压缩,双模激子振辐的两个正交分量总有一个存在压缩.这意味着量子噪声能被有效的得到抑制.此外,两种情形下的最大压缩都由初始腔场的压缩因子r决定.经过比较,我们还发现双模激子的正常压缩比和压缩大.     

耦合量子阱中激子凝聚的研究进展

近年来，半导体量子阱中激子的玻色一爱因斯坦凝聚研究取得了很大进展．实验上利用耦合量子阱间接激子中电子和空穴在空间上的分离，显著提高了激子的冷却速度和寿命，成功地把激子冷却到1K以下，观察到了激子的准凝聚状态，并且在强激光照射下，发现了随光照强度增强而增大的激子发光环和环上形成的有规则斑点图案，引起了广泛的兴趣和重视．理论研究表明，发光环的出现是电子和空穴在量子阱中的反常输运行为造成的，但环上形成规则斑点的物理机理目前尚不清楚．文章介绍了这方面的实验背景和形成激子环的物理图像，指出了理论研究中存在的问题，并对解决问题的方案进行了讨论．     

Linear polarization of luminescence in Bose-Einstein condensation of indirect excitons and spontaneous symmetry breaking

The linear polarization of luminescence from the Bose-Einstein condensate of dipolar (indirect) excitons accumulated in the ring lateral traps in GaAs/AlGaAs Schottky-diode heterostructures with a wide single quantum well has been observed. Luminescence from direct excitons remains unpolarized under the same experimental conditions. It has been shown that the linear polarization of the exciton condensate may arise from the anisotropic electron-hole (e–h) exchange interaction associated with the lateral anisotropy of the confining potential. The interaction mixes and splits the ground state of optically active excitons on heavy holes (with angular momentum projections of m=±1). The split spectral components from the corresponding angular momentum projections are linearly polarized in mutually orthogonal directions. Under this e–h exchange, the condensate component of excitons should appear in the lowest of the split states and luminescence from the Bose-Einstein condensate of excitons in such a split state becomes linearly polarized along the 〈110〉 crystallographic direction in the quantum well plane. The observed effect is a manifestation of spontaneous symmetry breaking in Bose-Einstein condensation of excitons.     

Acoustic–excitonic effects in a two-dimensional gas of dipolar excitons

The theory of the interaction of a two-dimensional gas of indirect dipolar excitons with Rayleigh surface elastic waves has been developed. The absorption and renormalization of the phase velocity of a surface wave, as well as the drag of excitons by the surface acoustic wave and the generation of bulk acoustic waves by a twodimensional gas of dipolar excitons irradiated by external electromagnetic radiation, have been considered. These effects have been studied both in a normal phase at high temperatures and in a condensed phase of the exciton gas. The calculations have been performed in the ballistic and diffusion limits for both phases.     

Polaron in an electron–exciton structure under the conditions of the Bose–Einstein condensation

A polaron state of an electron in a hybrid system composed of a two-dimensional electron gas and a Bose–Einstein condensate of excitons situated in a quantum well coplanar with the electron gas has been investigated. It has been shown that self-localization is possible even at a weak coupling between the components of the structure, when a fluctuation of the density of excitons producing a potential well for the electron is small compared to their average density.     

Interaction between the exciton and nuclear spin systems in a self-organized ensemble of InP/InGaP size-quantized islands

Magnetic interaction between spin-polarized nuclei and optically oriented excitons in a self-organized ensemble of size-quantized InP islands in an InGaP matrix has been studied in a magnetic field in Faraday geometry. The effective magnetic fields generated by polarized nuclei at excitons have been measured. The strengths of these fields were found to be different for active and inactive excitons because of the difference between the excitonic g factors. The heavy-hole g factor has been determined. The active and inactive excitonic states were found to be coupled through cross-relaxation. Fiz. Tverd. Tela (St. Petersburg) 41, 2193–2199 (December 1999)     

On the mechanism of the maintenance of Rabi oscillations in the system of exciton polaritons in a microcavity

A physical mechanism of the implementation of undamped Rabi oscillations in the system of exciton polaritons in a semiconductor microcavity in the presence of nonresonant pumping has been proposed. Various mechanisms of the stimulated scattering of excitons from the reservoir have been considered. It has been shown that undamped oscillations of the population of the photon component of the condensate can be caused by the feeding of a coherent Rabi oscillator owing to the pair scattering of excitons from the reservoir to the ground state. The effect should be observed in spite of a more intense relaxation of polaritons of the upper branch observed experimentally.     

Screening of static perturbation in a system of dipole excitons

The screening of local electrostatic perturbation by indirect excitons has been investigated. It has been shown that the linear screening is dielectric, and the effective dielectric constant may be large in the case of high degeneracy of the Bose gas of excitons. The emergence of a condensate significantly changes the behavior of the perturbation potential at infinity, leading to power-law asymptotic behavior with large exponents. In the nonlinear regime, the screened potential is saturated with an unlimited increase in the initial perturbation.     

Recombination-assisted creation of cation excitons and cross-luminescence quenching in CsCl crystals at high excitation densities

At high excitation densities, recombination-assisted creation of cation excitons, which transfer energy efficiently to the anion sublattice to initiate the luminescence of anion excitons and impurity centers, has been observed in CsCl crystals. At the same time, the creation of cation excitons competes with the electron recombination with cation holes and quenches the cross-luminescence. The intensity ratio of the cross-luminescence to exciton-impurity luminescence is different for crystal irradiation with γ rays and heavy particles.     

Theoretical calculation of excitonic binding energies and optical absorption spectra for Armchair graphene nanoribbons

In this paper the excitons of armchair graphene nanoribbons with layers of different width and thickness have been investigated. In this investigation, the band structure and energy gap of armchair graphene nanoribbons have been calculated using a tight-binding model including edge deformation effects (all edge atoms have been passivated with hydrogen atoms). Also, by calculating the conductance in armchair graphene nanoribbons (A-GNRs) optical absorption of armchair graphene nanoribbon in the single-electron approximation has been obtained. Finally, the binding energy of excitons in armchair graphene nanoribbons has been calculated using the Wannier model, Hartree-Fock approximation and the Bethe-Salpeter equation.     

Spectral photosensitivity of an organic semiconductor in a submicron metal grating

The photoelectric effect in films of the copper phthalocyanine organic semiconductor (α-CuPc) has been experimentally studied for two fundamentally different geometries. A sample in the first, normal geometry is fabricated in the form of a sandwich with an α-CuPc film between a transparent SnO₂ electrode on a substrate and an upper reflecting Al electrode. In the second case of the planar geometry, the semiconductor is deposited on the substrate with a system of submicron chromium interdigital electrodes. It has been found that the effective photoconductivity in the planar geometry is more than two orders of magnitude higher than that in the normal geometry. In addition to the classical model (without excitons), a simple exciton model has been proposed within which a relation has been obtained between the probability of the formation of electron–hole pairs and the characteristic recombination and dissociation times of excitons. An increase in the photoconductivity in the planar geometry has been explained within the exciton model by an increase in the rate of dissociation of excitons into electron–hole pairs owing to acceptor oxygen molecules, which diffuse more efficiently into the film in the case of the planar geometry where the upper electrode is absent.     

Electro-optical trap for dipolar excitons in a GaAs/AlAs Schottky diode with a single quantum well

An electro-optical trap for spatially indirect dipolar excitons has been implemented in a GaAs/AlAs Schottky diode with a 400-Å-wide single quantum well. In the presence of a bias voltage applied to a gate, the trap for excitons appears upon ring illumination of the structure by a continuous-wave or pulsed laser generating hot electron-hole pairs in the quantum well. A barrier for excitons collected inside the illuminated ring appears because of the screening of the applied electric field by nonequilibrium carriers directly in the excitation region. Excitons are collected inside the ring owing to the ambipolar drift of carriers and dipole-dipole exciton repulsion in the optical pump region. For dipolar excitons thus collected in the center of the ring electrooptical trap, a significant narrowing of the luminescence line that accompanies an increase in the density of excitations indicates the collective behavior of dipolar excitons.     

Far-infrared magneto-absorption of donor-bound excitons in germanium: Pseudo-acceptor model

The magneto-oscillatory absorption spectrum of the arsenic-bound excitons in germanium observed at 118.6 μm reveals a series of absorption lines similar to the Zeeman spectrum of the acceptor impurity. This fact indicates that the bound excitons have the excited states associated with the light-hole Landau ladders and these excited states can be described by the model of a hole bound to the D^- state, i.e. the pseudo-acceptor model. The hole binding energy of the ground state of the bound excitons has been obtained to be 4.7 meV, which is smaller compared with the binding energy of the acceptor impurity.     

Excitons in GaAs quantum wells

This paper attempts to summarize some of the salient properties of excitons in GaAs quantum wells and in doing so it will emphasize work at AT&T Bell Labs with which the authors have been associated. Although the text relies heavily on published material, an effort has been made to stress new material, and where feasible, unpublished aspects, e.g., figures, related to earlier work. Topics discussed on the quasi-2D excitons in GaAs quantum well include: their inherent tendency for intrinsic free-exciton emission, exciton binding energies, bound and localized excitons including biexcitons and excitons bound to neutral impurities, effects of n- and p-type modulation and antimodulation doping, and the developments leading to a proposed set of quantum well parameters that results in acceptable fits to the observed exciton transitions for GaAs quantum wells with both square and parabolic potential profiles.     

Quantized bimolecular auger recombination of excitons in single-walled carbon nanotubes

Auger-like exciton-exciton annihilation in isolated single-walled carbon nanotubes (SWNTs) has been studied by femtosecond transient absorption spectroscopy. We observe a quantization of the Auger recombination process and extract dynamics for 2 and 3 electron-hole pair excited states. We further demonstrate that Auger recombination in SWNTs is a two-particle process involving strongly bound excitons and not a three-particle Auger process involving unbound electrons and holes. We thus provide explicit experimental evidence for one-dimensional discrete excitons in SWNTs.     

Mixing of singlet and triplet exciton states in highly excited CdS

Fluorescence spectra due to the free excitons have been studied in CdS at 4.2 K under various excitation levels. It has been found that the triplet-exciton emission intensity relative to the singlet line is enhanced remarkably with the excitation power density. This effect is reasonably explained by the mixing of the singlet with the triplet through the many body interaction. The density of optically generated excitons is determined from the magnetic field dependence of the triplet emission intensity.     

Effect of a Coulomb well in (In,Ga)As/GaAs quantum wells

Magnetooptical investigation of exciton transitions in high-quality quantum wells of an (In, Ga)As/GaAs heterosystem has been carried out. Investigation of transmission of free-hanging samples detached from the substrate in the magnetic fields of up to 12 T revealed a rich fine structure associated with various heavy-hole and light-hole exciton transitions. In particular, transitions from the excited states of light holes localized in a Coulomb potential produced by an electron along the heterojunction axis (a Coulomb well) have been detected. Taking into account consistently stresses, formation of Landau levels, the binding energies of excitons (diamagnetic excitons), and the effect of a Coulomb well, we have succeeded to describe the experimental results with the use of a self-consistent variational procedure. As a result, new features in the structure of optical transitions have been explained and the effective masses of electrons and holes of excitons formed by both heavy and light holes have been determined with a high accuracy.     

Decay of excitonic gratings: Effect of exciton diffusion and reabsorption of exciton fluorescence

A phenomenological theory of the decay time of an excitonic grating (a grating of exciton densities) formed at some initial moment in a plane-parallel plate of a molecular crystal has been developed. Along with the diffusion of excitons reabsorption of the fluorescence light radiated by excitons is also taken into account. It is shown that in crystals with large overlapping of absorption and emission spectra the life time of the exciton grating is diminished appreciably by reabsorption. Numerical estimations for this life for anthracene at room temperature were made. In the above conditions it is the reabsorption which is important, whereas the diffusion of excitons hardly affects the decay time of the excitonic grating. The available experimental data and possible trends of further investigations are discussed.     

Decay of the proposed Bose-Einstein condensed excitons in AgBr

A narrow emission line close to the free singlet exciton emission in AgBr has been subject to different interpretations. Bose-Einstein condensed free triplet excitons as well as a weakly bound exciton have been suggested as the origin of this emission line. The line is investigated from 1.5 to 2.1 K with respect to the temperature dependence of the lifetime and intensity. A strong decrease of both lifetime and intensity with increasing temperature is observed and suggests this line to originate from the recombination of bound, rather than of free, excitons.